JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK34 07 P-Channel 30-V(D-S) MOSFET SOT-23-3L V(BR)DSS ID RDS(on)MAX \60mΩ@-10 V -4.1A 87mΩ@-4.5V -30V 1. GATE 2. SOURCE 3. DRAIN D General Description The CJK3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Equivalent Circuit MARKING Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -4.1 A Drain Current-Pulsed IDM -20 A Power Dissipation PD 300 mW RθJA 417 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~ +150 ℃ Thermal Resistance from Junction to Ambient www.cj-elec.com 1 Units D,Aug,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit Static characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V -1 µA Gate -source leakage current IGSS VGS =±20V, VDS = 0V ±100 nA Drain-source on-resistance (note 1) RDS(on) Forward tranconductance (note 1) Gate threshold voltage gFS VGS(th) Diode forward voltage (note 1) VSD -30 V VGS =-10V, ID =-4.1A 50 60 mΩ VGS =-4.5V, ID =-3A 68 87 mΩ VDS =-5V, ID =-4A 5.5 VDS =VGS, ID =-250µA -1 S -1.4 IS=-1A,VGS=0V -3 V -1 V Dynamic characteristics (note 2) Input capacitance Ciss 700 pF Output capacitance Coss 120 pF Reverse transfer capacitance Crss 75 pF td(on) 8.6 ns VGS=-10V,VDS=-15V, 5.0 ns RL=3.6Ω,RGEN=3Ω 28.2 ns 13.5 ns VDS =-15V,VGS =0V,f =1MHz Switching characteristics (note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) tf Notes: 1. Pulse test: Pulse width ≤300µs, Duty cycle ≤2%. 2. These parameter have no way to verify. www.cj-elec.com 2 D,Aug,2015 Typical Characteristics Output Characteristics -20 Transfer Characteristics -5 VGS=-10、-5.0、-4.5、-4.0V Ta=25℃ Ta=25℃ Pulsed Pulsed VGS=-3.5V -4 -10 -5 ID VGS=-3.0V -3 DRAIN CURRENT DRAIN CURRENT ID (A) (A) -15 -2 -1 -0 -0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE RDS(ON) —— VDS -0 -5 -0 (V) -1 -2 GATE TO SOURCE VOLTAGE -3 VGS -4 (V) RDS(ON) —— VGS ID 100 180 Ta=25℃ Ta=25℃ Pulsed Pulsed 150 (mΩ) (mΩ) 80 RDS(ON) 60 ON-RESISTANCE ON-RESISTANCE RDS(ON) VGS=-4.5V VGS=-10V 40 20 -0 -2 -4 -6 DRAIN CURRENT IS —— ID -8 120 90 ID=-4.1A 60 30 -10 (A) -2 -4 -6 GATE TO SOURCE VOLTAGE -8 VGS -10 (V) VSD -10 Ta=25℃ Pulsed -0.1 SOURCE CURRENT IS (A) -1 -0.01 -1E-3 -1E-4 -1E-5 -0.2 -0.4 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE www.cj-elec.com -1.0 VSD -1.2 (V) 3 D,Aug,2015 -3L Symbol A A1 A2 b c D E1 E e e1 L -3L Dimensions In Millimeters Min. Max. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 1.500 1.700 2.650 2.950 0.950(BSC) 1.800 2.000 0.300 0.600 0° 8° Dimensions In Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 0.059 0.067 0.104 0.116 0.037(BSC) 0.071 0.079 0.012 0.024 0° 8° 4 D,Aug,2015 SOT-23-3L Tape and Reel www.cj-elec.com 5 D,Aug,2015