2N5771 MMBT5771 C E C TO-92 BE SOT-23 B Mark: 3R PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 15 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation Max Units 2N5771 350 2.8 125 *MMBT5771 225 1.8 357 556 mW mW/°C °C/W °C/W 2N5771 / MMBT5771 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 3.0 mA, IB = 0 15 V V(BR)CES Collector-Emitter Breakdown Voltage I C = 100 µA, VBE = 0 15 V V(BR)CBO Collector-Base Breakdown Voltage I C = 100 µA, I E = 0 15 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 100 µA, IC = 0 4.5 V ICBO Collector Cutoff Current VCB = 8.0 V, IE = 0 10 nA ICES Collector Cutoff Current IEBO Emitter Cutoff Current VCE = 8.0 V, VBE = 0 VCE = 8.0 V, VBE = 0, TA= 125°C VEB = 4.5 V, IC = 0 10 5.0 1.0 nA µA µA ON CHARACTERISTICS* hFE DC Current Gain VCE(sat ) Collector-Emitter Saturation Voltage VBE( sat) Base-Emitter Saturation Voltage I C = 1.0 mA, VCE = 0.5 V I C = 10 mA, VCE = 0.3 V I C = 10mA,VCE = 0.3V,TA = -55°C I C = 50 mA, VCE = 1.0 V I C = 1.0 mA, IB = 0.1 mA I C = 10 mA, IB = 1.0 mA I C = 50 mA, IB = 5.0 mA I C = 1.0 mA, IB = 0.1 mA I C = 10 mA, IB = 1.0 mA I C = 50 mA, IB = 5.0 mA 35 50 20 40 0.75 120 0.15 0.18 0.6 0.8 0.95 1.5 V V V V V V 3.0 pF 3.5 pF SMALL SIGNAL CHARACTERISTICS Ccb Collector-Base Capacitance Ceb Emitter-Base Capacitance hfe Small-Signal Current Gain VCB = 5.0 V, IE = 0, f = 140 kHz VBE = 0.5 V, IC = 0, f = 140 kHz I C = 10 mA, VCE = 10 V, f = 100 MHz 8.5 MHz SWITCHING CHARACTERISTICS ts Storage Time ton Turn-On Time toff Turn-Off Time *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% I C = 10 mA, VCC = 1.5 V, I B1 = IB2 = 1.0 mA I C = 10 mA, VCC = 1.5 V, I B = 1.0 mA I C = 10 mA, VCC = 1.5 V, I B1 = IB2 = 1.0 mA 20 ns 15 ns 20 ns 2N5771 / MMBT5771 PNP Switching Transistor N 2N6427 MMBT6427 C E C B TO-92 SOT-23 E B Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 40 V VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 12 V IC Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range 1.2 A -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." Max Units 2N6427 625 5.0 83.3 *MMBT6427 350 2.8 200 357 mW mW/°C °C/W °C/W 2N6427 / MMBT6427 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage Collector Cutoff Current IE = 10 µA, IC = 0 VCE = 25 V, IB = 0 12 ICEO ICBO Collector Cutoff Current IEBO Emitter Cutoff Current V 1.0 µA VCB = 30 V, IE = 0 50 nA VEB = 10 V, IC = 0 50 nA 100,000 200,000 140,000 1.2 1.5 2.0 V V V 1.75 V 7.0 pF 15 pF ON CHARACTERISTICS hFE DC Current Gain* VCE(sat ) Collector-Emitter Saturation Voltage VBE( sat) Base-Emitter Saturation Voltage I C = 10 mA, VCE = 5.0 V I C = 100 mA, VCE = 5.0 V I C = 500 mA, VCE = 5.0 V I C = 50 mA, IB = 0.5 mA I C = 500 mA, IB = 0.5 mA I C = 500 mA, IB = 0.5 mA VBE( on) Base-Emitter On Voltage I C = 50 mA, VCE = 5.0 mA 10,000 20,000 14,000 SMALL SIGNAL CHARACTERISTICS Cobo Output Capacitance Cibo Input Capcitance *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% VCB = 10 V, IE = 0, f = 1.0 MHz VBE = 1.0 V, IC = 0, f = 1.0 MHz 2N6427 / MMBT6427 NPN Darlington Transistor