ACE ACE2308E N-channel 30-v mosfet Datasheet

ACE2308E
N-Channel 30-V MOSFET
Features
•
•
•
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Applications
•
•
•
Power Routing
Li Ion Battery Packs
Level Shifting and Driver Circuits
Absolute Maximum Ratings
Parameter
Symbol
Limit
Units
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current a
TA=25℃
ID
TA=70℃
Pulse Drain Current b
Continuous Source Current (Diode Conduction)
Power Dissipation a
a
TA=25℃
TA=70℃
Operating Temperature / Storage Temperature
3.5
A
2.8
IDM
15
A
IS
1.9
A
PD
TJ/TSTG
1.3
W
0.8
O
-55/150
C
*1 Pw ≦10 μs, Duty cycle ≦1 %
*2 When mounted on a 1*0.75*0.062 inch glass epoxy board%
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient a
Symbol Maximum
t <= 10 sec
Steady State
RθJA
100
166
Units
O
C/W
Packaging Type
SOT-23-3
D
G
S
VER 1.1
1
ACE2308E
N-Channel 30-V MOSFET
Ordering information
ACE2308EBM + H
Halogen - free
Pb - free
BM : SOT-23-3
Electrical Characteristics
(TA=25℃, unless otherwise specified)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Static
0.4
V
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 uA
Gate-Body Leakage
VGS(th)
VDS = 0 V, VGS = ±12 V
±10
VDS = 16 V, VGS = 0 V
1
Zero Gate Voltage Drain Current
IDSS
VDS = 16 V, VGS = 0 V, TJ = 55°C
25
On-State Drain Current a
ID(on)
Drain-Source On-Resistance a
rDS(on)
Forward Transconductance a
gfs
VDS = 15 V, ID = 2.8 A
12
S
Diode Forward Voltage a
VSD
IS = 1 A, VGS = 0 V
0.69
V
VDS = 5 V, VGS = 4.5 V
5
uA
uA
A
VGS = 4.5 V, ID = 3 A
60
VGS = 2.5 V, ID = 2.4 A
82
mΩ
Dynamic b
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
2.0
Turn-On Delay Time
td(on)
8
Rise Time
tr
VDS = 15 V, RL = 3.6 Ω, ID = 3 A, VGEN =
21
Turn-Off Delay Time
td(off)*
4.5 V, RGEN = 6 Ω
48
Fall Time
tf
26
Input Capacitance
Ciss
417
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
6
VDS = 15 V, VGS = 4.5 V, ID = 3 A
VDS = 15 V, VGS = 0 V, f = 1 MHz
1.0
nC
nS
77
pF
68
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
VER 1.1
2
ACE2308E
N-Channel 30-V MOSFET
Typical Performance Characteristics
ID-Drain Current (A)
1.On-Resistance vs. Drain Current
VGS - Gate-to-Source Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
VGS - Gate-to-Source Voltage (V)
2. Transfer Characteristics
VDS - Source –to-Drain Voltage (V)
4. Drain-to-Source Forward Voltage
VDS-Drain-to-Source Voltage (V)
6. Capacitance
VER 1.1
3
ACE2308E
N-Channel 30-V MOSFET
Typical Performance Characteristics
Qg - Total Gate Charge (nC)
7. Gate Charge
VgS Drain to Source Voltage (V)
9. Safe Operating Area
TJ-Junction Temperature(OC)
8. Normalized On-Resistance Vs
Junction Temperature
t1 TIME (sec)
10.Single Pulse Maximum Power Dissipation
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
VER 1.1
4
ACE2308E
N-Channel 30-V MOSFET
Packing Information
SOT-23-3
SYMBOLS
A
A1
A2
B
C
D
E
E1
e
e1
L
L1
L2
R
Θ
Θ1
U
DIMENSIONS IN MILLIMETERS
MIN
NOM
MAX
0.935
0.95
1.10
0.01
0.10
0.85
0.90
0.925
0.30
0.40
0.50
0.10
2.70
2.60
1.40
0.15
2.90
2.80
1.60
0.25
3.10
3.00
1.80
0.30
0.95BSC
1.90BSC
0.40
0.60REF
0.25BSC
0.60
0.10
0°
4°
7°NOM
8°
nit: mm
VER 1.1
5
ACE2308E
N-Channel 30-V MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.1
6
Similar pages