ACE2308E N-Channel 30-V MOSFET Features • • • Low rDS(on) trench technology Low thermal impedance Fast switching speed Applications • • • Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits Absolute Maximum Ratings Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current a TA=25℃ ID TA=70℃ Pulse Drain Current b Continuous Source Current (Diode Conduction) Power Dissipation a a TA=25℃ TA=70℃ Operating Temperature / Storage Temperature 3.5 A 2.8 IDM 15 A IS 1.9 A PD TJ/TSTG 1.3 W 0.8 O -55/150 C *1 Pw ≦10 μs, Duty cycle ≦1 % *2 When mounted on a 1*0.75*0.062 inch glass epoxy board% THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol Maximum t <= 10 sec Steady State RθJA 100 166 Units O C/W Packaging Type SOT-23-3 D G S VER 1.1 1 ACE2308E N-Channel 30-V MOSFET Ordering information ACE2308EBM + H Halogen - free Pb - free BM : SOT-23-3 Electrical Characteristics (TA=25℃, unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit Static 0.4 V Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA Gate-Body Leakage VGS(th) VDS = 0 V, VGS = ±12 V ±10 VDS = 16 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V, TJ = 55°C 25 On-State Drain Current a ID(on) Drain-Source On-Resistance a rDS(on) Forward Transconductance a gfs VDS = 15 V, ID = 2.8 A 12 S Diode Forward Voltage a VSD IS = 1 A, VGS = 0 V 0.69 V VDS = 5 V, VGS = 4.5 V 5 uA uA A VGS = 4.5 V, ID = 3 A 60 VGS = 2.5 V, ID = 2.4 A 82 mΩ Dynamic b Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 2.0 Turn-On Delay Time td(on) 8 Rise Time tr VDS = 15 V, RL = 3.6 Ω, ID = 3 A, VGEN = 21 Turn-Off Delay Time td(off)* 4.5 V, RGEN = 6 Ω 48 Fall Time tf 26 Input Capacitance Ciss 417 Output Capacitance Coss Reverse Transfer Capacitance Crss 6 VDS = 15 V, VGS = 4.5 V, ID = 3 A VDS = 15 V, VGS = 0 V, f = 1 MHz 1.0 nC nS 77 pF 68 Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. VER 1.1 2 ACE2308E N-Channel 30-V MOSFET Typical Performance Characteristics ID-Drain Current (A) 1.On-Resistance vs. Drain Current VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage VDS - Drain-to-Source Voltage (V) 5. Output Characteristics VGS - Gate-to-Source Voltage (V) 2. Transfer Characteristics VDS - Source –to-Drain Voltage (V) 4. Drain-to-Source Forward Voltage VDS-Drain-to-Source Voltage (V) 6. Capacitance VER 1.1 3 ACE2308E N-Channel 30-V MOSFET Typical Performance Characteristics Qg - Total Gate Charge (nC) 7. Gate Charge VgS Drain to Source Voltage (V) 9. Safe Operating Area TJ-Junction Temperature(OC) 8. Normalized On-Resistance Vs Junction Temperature t1 TIME (sec) 10.Single Pulse Maximum Power Dissipation t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient VER 1.1 4 ACE2308E N-Channel 30-V MOSFET Packing Information SOT-23-3 SYMBOLS A A1 A2 B C D E E1 e e1 L L1 L2 R Θ Θ1 U DIMENSIONS IN MILLIMETERS MIN NOM MAX 0.935 0.95 1.10 0.01 0.10 0.85 0.90 0.925 0.30 0.40 0.50 0.10 2.70 2.60 1.40 0.15 2.90 2.80 1.60 0.25 3.10 3.00 1.80 0.30 0.95BSC 1.90BSC 0.40 0.60REF 0.25BSC 0.60 0.10 0° 4° 7°NOM 8° nit: mm VER 1.1 5 ACE2308E N-Channel 30-V MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 6