Plastic-Encapsulate Transistors FEATURES MMDT3906(PNP) Epitaxial planar die construction Ideal for low power amplification and switching MARKING: K3N MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -200 mA Collector Power Dissipation IC 200 mW Junction Temperature TJ 150 Storage Temperature Tstg C2 B1 E1 E2 B2 C1 SOT-363 -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 V Min Typ Max Unit Collector cut-off current ICEX VCE=-30V,VEB(OFF)=-3V -50 nA Base cut-off current IEBO VEB=-5V,IC=0 -50 nA hFE(1) VCE=-1V,IC=-0.1mA 60 hFE(2) VCE=-1V,IC=-1mA 80 hFE(3) VCE=-1V,IC=-10mA 100 hFE(4) VCE=-1V,IC=-50mA 60 hFE(5) VCE=-1V,IC=-100mA 30 VCE(sat)1 IC=-10mA,IB=-1mA -0.25 V VCE(sat)2 IC=-50mA,IB=-5mA -0.4 V VBE(sat)1 IC=-10mA,IB=-1mA -0.85 V VBE(sat)2 IC=-50mA,IB=-5mA -0.95 V DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage -0.65 300 Transition frequency fT VCE=-20V,IC=-10mA,f=100MHz Collector output capacitance Cob VCB=-5V,IE=0,f=1MHz 4.5 pF Noise figure NF VCE=-5V,Ic=-0.1mA,f=1kHz,Rg=1KΩ 4 dB Delay time td VCC=-3V, VBE=0.5V 35 nS Rise time tr IC=-10mA , IB1=-IB2=-1mA 35 nS Storage time tS VCC=-3V, 225 nS Fall time tf IC=-10mA 75 nS 250 MHz IB1=-IB2=- 1mA GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P2-P1 Plastic-Encapsulate Transistors MMDT3906 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P2-P2