DF005S, DF01S, DF02S, DF04S, DF06S, DF08S, DF10S www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifiers FEATURES • UL recognition, file number E54214 • Ideal for automated placement ~ • High surge current capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ~ • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 ~ TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for SMPS, lighting ballaster, adapter, battery charger, home appliances, office equipment, and telecommunication applications. ~ Case Style DFS PRIMARY CHARACTERISTICS MECHANICAL DATA Package DFS IF(AV) 1A VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 50 A IR 5 μA VF at IF = 1.0 A 1.1 V TJ max. 150 °C Diode variations Quad Case: DFS Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked on body MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code DF005S DF01S DF02S DF04S DF06S DF08S DF10S DF005S DF01S DF02S DF04S DF06S DF08S DF10S UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward output rectified current at TA = 40 °C (1) IF(AV) 1.0 A Peak forward surge current single half sine-wave superimposed on rated load IFSM 50 A I2t 10 A2s TJ, TSTG - 55 to + 150 °C Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range Note (1) Units mounted on PCB with 0.51" x 0.51" (13 mm x 13 mm) copper pads ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage drop per diode Maximum DC reverse current at rated DC blocking voltage per diode TEST CONDITIONS SYMBOL DF005S DF01S DF02S DF04S DF06S DF08S DF10S UNIT 1.0 A TA = 25 °C TA = 125 °C Typical junction capacitance per diode (1) VF IR CJ 1.1 5.0 500 25 V μA pF Note (1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V Revision: 19-Aug-13 Document Number: 88573 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DF005S, DF01S, DF02S, DF04S, DF06S, DF08S, DF10S www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance (1) DF005S DF01S DF02S DF04S RJA 40 RJL 15 DF06S DF08S DF10S UNIT °C/W Note (1) Units mounted on PCB with 0.51" x 0.51" (13 mm x 13 mm) copper pads ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE DF06S-E3/45 0.399 45 50 Tube DF06S-E3/77 0.399 77 1500 13" diameter paper tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 60 Hz Resistive or Inductive Load Instantaneous Forward Current (A) Average Forward Output Current (A) 1.0 0.5 P.C.B. Mounted on 0.51 x 0.51" (13 x 13 mm) Copper Pads 0 20 40 60 80 100 120 140 0.1 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 0.01 0.4 160 0.6 0.8 1.0 1.2 1.4 Ambient Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Derating Curve Output Rectified Current Fig. 3 - Typical Forward Characteristics Per Diode 100 60 TJ = 150 °C Single Sine-Wave Instantaneous Reverse Current (µA) Peak Forward Surge Current (A) 1 50 40 30 20 10 1.0 Cycle 0 10 TJ = 125 °C 1 0.1 TJ = 50 °C 0.01 1 10 100 0 20 40 60 80 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Revision: 19-Aug-13 Document Number: 88573 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DF005S, DF01S, DF02S, DF04S, DF06S, DF08S, DF10S www.vishay.com Vishay General Semiconductor 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 100 10 10 1 0.1 0.01 1 1 10 100 0.1 1 10 100 Reverse Voltage (V) t - Heating Time (s) Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style DFS Mounting Pad La yout 0.205 (5.2) 0.195 (5.0) 0.047 (1.20) 0.040 (1.02) 0.047 MIN. (1.20 MIN.) 0.404 MAX. (10.26 MAX.) 0.060 MIN. (1.52 MIN.) 0.404 (10.3) 0.386 (9.80) 0.335 (8.51) 0.320 (8.13) 45° 0.255 (6.5) 0.245 (6.2) 0.130 (3.3) 0.120 (3.05) 0.013 (0.330) 0.009 (0.241) 0.060 (1.524) 0.040 (1.016) Revision: 19-Aug-13 0.205 (5.2) 0.195 (5.0) 0.013 (0.330) 0.003 (0.076) Document Number: 88573 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000