PHILIPS LEE1015 Npn microwave power transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
LEE1015T
NPN microwave power transistor
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC15
1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power transistor
LEE1015T
FEATURES
PINNING - SOT122A
• Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
PIN
• Interdigitated structure provides high emitter efficiency
• Gold metallization realizes very good stability of the
characteristics and excellent lifetime
• Multicell geometry gives good balance of dissipated
power and low thermal resistance.
APPLICATIONS
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
handbook, halfpage 4
c
Intended for use in common emitter, class A power
amplifiers for applications that require a high level of
linearity.
1
3
b
e
DESCRIPTION
2
MAM229
NPN silicon planar epitaxial microwave power transistor in
a SOT122A metal ceramic package.
Marking code: 1015T.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common base class A narrowband amplifier (guaranteed values).
MODE OF OPERATION
Class A (CW)
f
(MHz)
860
IC
(mA)
VCE
(V)
20
140
PL1
(W)
>1
Gpo
(dB)
>13
dim
(dB)
<−57 note 1
Note
1. The stated intermodulation distortion level is referred to the total output power of 18.25 dBm, which corresponds to
the sum of the power carried by each of the two equal amplitude tones at f1 = 859 MHz and f2 = 861 MHz.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LEE1015T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
40
V
VCER
collector-emitter voltage
RBE = 10 Ω
−
40
V
VCEO
collector-emitter voltage
open base
−
22
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current
−
500
mA
Ptot
total power dissipation
−
7.5
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
Tsld
soldering temperature
Tmb = 75 °C
t ≤ 10 s; note 1
−
200
°C
−
235
°C
Note
1. Up to 0.2 mm from ceramic.
MBB632
MLA736
10
1
handbook, halfpage
handbook, halfpage
Ptot
(W)
IC
(A)
7.5
(1)
(2)
10−1
5.0
2.5
0
−50
0
50
100
10−2
150
200
Tamb (oC)
1
10
VCE (V)
Tmb = 75 °C.
(1) Region of permissible DC operation.
(2) Possible extension provided RBE ≤ 10 Ω.
Fig.2
Maximum power dissipation derating as a
function of mounting base temperature.
Fig.3 DC SOAR.
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Feb 18
3
102
Philips Semiconductors
Product specification
NPN microwave power transistor
LEE1015T
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting base
Tj = 75 °C
12
K/W
Rth mb-h
thermal resistance from mounting base to heatsink
note 1
0.6
K/W
MAX.
UNIT
Note
1. See “Mounting recommendations in the General part of handbook SC15”.
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
collector cut-off current
VCB = 40 V; IE = 0
400
µA
ICER
collector cut-off current
VCE = 40 V; RBE = 10 Ω
20
mA
IEBO
emitter cut-off current
VEB = 1.5 V; IC = 0
400
µA
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C in the test circuit.
MODE OF OPERATION
Class A
f
(MHz)
VCE
(V)
IC
(mA)
PL1
(W)
Gpo
(dB)
860
20
140
>1; typ. 1.3
>13; typ. 14.5
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Feb 18
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LEE1015T
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of this specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Feb 18
5
Philips Semiconductors
Product specification
NPN microwave power transistor
LEE1015T
NOTES
1997 Feb 18
6
Philips Semiconductors
Product specification
NPN microwave power transistor
LEE1015T
NOTES
1997 Feb 18
7
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SCA53
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Date of release: 1997 Feb 18
Document order number:
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