DISCRETE SEMICONDUCTORS DATA SHEET LEE1015T NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor LEE1015T FEATURES PINNING - SOT122A • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR PIN • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good stability of the characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS DESCRIPTION 1 collector 2 emitter 3 base 4 emitter handbook, halfpage 4 c Intended for use in common emitter, class A power amplifiers for applications that require a high level of linearity. 1 3 b e DESCRIPTION 2 MAM229 NPN silicon planar epitaxial microwave power transistor in a SOT122A metal ceramic package. Marking code: 1015T. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class A narrowband amplifier (guaranteed values). MODE OF OPERATION Class A (CW) f (MHz) 860 IC (mA) VCE (V) 20 140 PL1 (W) >1 Gpo (dB) >13 dim (dB) <−57 note 1 Note 1. The stated intermodulation distortion level is referred to the total output power of 18.25 dBm, which corresponds to the sum of the power carried by each of the two equal amplitude tones at f1 = 859 MHz and f2 = 861 MHz. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 2 Philips Semiconductors Product specification NPN microwave power transistor LEE1015T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCER collector-emitter voltage RBE = 10 Ω − 40 V VCEO collector-emitter voltage open base − 22 V VEBO emitter-base voltage open collector − 3 V IC collector current − 500 mA Ptot total power dissipation − 7.5 W Tstg storage temperature −65 +150 °C Tj junction temperature Tsld soldering temperature Tmb = 75 °C t ≤ 10 s; note 1 − 200 °C − 235 °C Note 1. Up to 0.2 mm from ceramic. MBB632 MLA736 10 1 handbook, halfpage handbook, halfpage Ptot (W) IC (A) 7.5 (1) (2) 10−1 5.0 2.5 0 −50 0 50 100 10−2 150 200 Tamb (oC) 1 10 VCE (V) Tmb = 75 °C. (1) Region of permissible DC operation. (2) Possible extension provided RBE ≤ 10 Ω. Fig.2 Maximum power dissipation derating as a function of mounting base temperature. Fig.3 DC SOAR. MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 3 102 Philips Semiconductors Product specification NPN microwave power transistor LEE1015T THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal resistance from junction to mounting base Tj = 75 °C 12 K/W Rth mb-h thermal resistance from mounting base to heatsink note 1 0.6 K/W MAX. UNIT Note 1. See “Mounting recommendations in the General part of handbook SC15”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS ICBO collector cut-off current VCB = 40 V; IE = 0 400 µA ICER collector cut-off current VCE = 40 V; RBE = 10 Ω 20 mA IEBO emitter cut-off current VEB = 1.5 V; IC = 0 400 µA APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in the test circuit. MODE OF OPERATION Class A f (MHz) VCE (V) IC (mA) PL1 (W) Gpo (dB) 860 20 140 >1; typ. 1.3 >13; typ. 14.5 MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 4 Philips Semiconductors Product specification NPN microwave power transistor LEE1015T DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 5 Philips Semiconductors Product specification NPN microwave power transistor LEE1015T NOTES 1997 Feb 18 6 Philips Semiconductors Product specification NPN microwave power transistor LEE1015T NOTES 1997 Feb 18 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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