ON MJL21194G Silicon power transistor Datasheet

MJL21193, MJL21194
Silicon Power Transistors
The MJL21193 and MJL21194 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
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• Total Harmonic Distortion Characterized
• High DC Current Gain −
•
•
•
16 AMPERE COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS, 200 WATTS
hFE = 25 Min @ IC
= 8 Adc
Excellent Gain Linearity
High SOA: 2.25 A, 80 V, 1 Second
These are Pb−Free Devices*
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MARKING DIAGRAM
MAXIMUM RATINGS
Symbol
Value
Unit
Collector−Emitter Voltage
Rating
VCEO
250
Vdc
Collector−Base Voltage
VCBO
400
Vdc
Emitter−Base Voltage
VEBO
5
Vdc
Collector−Emitter Voltage − 1.5 V
VCEX
400
Vdc
Collector Current − Continuous
Peak (Note 1)
IC
16
30
Adc
Base Current − Continuous
IB
5
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD
200
1.43
W
W/_C
TJ, Tstg
−65 to
+ 150
_C
Symbol
Max
Unit
RqJC
0.7
_C/W
Operating and Storage Junction
Temperature Range
MJL2119x
AYYWWG
TO−264
CASE 340G
STYLE 2
x
A
YY
WW
G
3
1
EMITTER
BASE
2 COLLECTOR
= 3 or 4
= Assembly Location
= Year
= Work Week
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%
ORDERING INFORMATION
Package
Shipping†
MJL21193G
TO−264
(Pb−Free)
25 Units / Rail
MJL21194G
TO−264
(Pb−Free)
25 Units / Rail
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
June, 2010 − Rev. 6
1
Publication Order Number:
MJL21193/D
MJL21193, MJL21194
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
250
−
−
Vdc
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
ICEO
−
−
100
mAdc
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
IEBO
−
−
100
mAdc
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
ICEX
−
−
100
mAdc
4.0
2.25
−
−
−
−
25
8
−
−
75
−
−
−
2.2
−
−
−
−
1.4
4
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
SECOND BREAKDOWN
IS/b
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non−repetitive)
(VCE = 80 Vdc, t = 1 s (non−repetitive)
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
hFE
Base−Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
(Matched pair hFE = 50 @ 5 A/5 V)
THD
hFE
unmatched
hFE
matched
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
%
−
0.8
−
−
0.08
−
fT
4
−
−
MHz
Cob
−
−
500
pF
NPN MJL21194
f,
T CURRENT GAIN BANDWIDTH PRODUCT (MHz)
f,
T CURRENT GAIN BANDWIDTH PRODUCT (MHz)
PNP MJL21193
6.5
6.0
VCE = 10 V
5.5
5V
5.0
4.5
4.0
3.5
3.0
0.1
TJ = 25°C
ftest = 1 MHz
1.0
10
8.0
7.0
10 V
6.0
5.0
VCE = 5 V
4.0
3.0
2.0
1.0
0
0.1
IC COLLECTOR CURRENT (AMPS)
TJ = 25°C
ftest = 1 MHz
1.0
10
IC COLLECTOR CURRENT (AMPS)
Figure 2. Typical Current Gain Bandwidth Product
Figure 1. Typical Current Gain Bandwidth Product
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2
MJL21193, MJL21194
TYPICAL CHARACTERISTICS
PNP MJL21193
NPN MJL21194
1000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
1000
TJ = 100°C
25°C
100
-25°C
TJ = 100°C
25°C
100
-25°C
VCE = 20 V
10
0.1
VCE = 20 V
1.0
10
IC COLLECTOR CURRENT (AMPS)
10
0.1
100
Figure 4. DC Current Gain, VCE = 20 V
PNP MJL21193
NPN MJL21194
1000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
100
Figure 3. DC Current Gain, VCE = 20 V
1000
TJ = 100°C
25°C
100
-25°C
TJ = 100°C
25°C
100
-25°C
VCE = 5 V
10
0.1
VCE = 20 V
1.0
10
IC COLLECTOR CURRENT (AMPS)
10
0.1
100
1.0
10
IC COLLECTOR CURRENT (AMPS)
100
Figure 5. DC Current Gain, VCE = 5 V
Figure 6. DC Current Gain, VCE = 5 V
PNP MJL21193
NPN MJL21194
35
30
25
20
IB = 2 A
I C, COLLECTOR CURRENT (A)
1.5 A
I C, COLLECTOR CURRENT (A)
1.0
10
IC COLLECTOR CURRENT (AMPS)
1A
15
0.5 A
10
5.0
IB = 2 A
30
1.5 A
25
1A
20
0.5 A
15
10
5.0
TJ = 25°C
TJ = 25°C
0
0
0
5.0
10
15
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0
25
Figure 7. Typical Output Characteristics
5.0
10
15
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
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3
25
MJL21193, MJL21194
TYPICAL CHARACTERISTICS
PNP MJL21193
NPN MJL21194
2.5
1.4
TJ = 25°C
IC/IB = 10
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
3.0
2.0
1.5
1.0
VBE(sat)
0.5
1.2
TJ = 25°C
IC/IB = 10
1.0
VBE(sat)
0.8
0.6
0.4
0.2
VCE(sat)
VCE(sat)
1.0
10
IC, COLLECTOR CURRENT (AMPS)
0
0.1
100
Figure 10. Typical Saturation Voltages
PNP MJL21193
NPN MJL21194
10
TJ = 25°C
1.0
0.1
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Typical Saturation Voltages
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
0
0.1
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
1.0
10
10
TJ = 25°C
VCE = 20 V (SOLID)
1.0
0.1
0.1
100
100
VCE = 5 V (DASHED)
1.0
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Typical Base−Emitter Voltage
Figure 12. Typical Base−Emitter Voltage
100
IC, COLLECTOR CURRENT (AMPS)
100
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second breakdown.
1 SEC
10
1.0
0.1
1.0
10
100
1000
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
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4
MJL21193, MJL21194
10000
10000
TC = 25°C
C, CAPACITANCE (pF)
Cib
1000
Cob
100
0.1
Cib
1000
Cob
f(test) = 1 MHz)
f(test) = 1 MHz)
1.0
10
100
0.1
100
1.0
10
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 14. MJL21193 Typical Capacitance
Figure 15. MJL21194 Typical Capacitance
1.2
1.1
T , TOTAL HARMONIC
HD
DISTORTION (%)
C, CAPACITANCE (pF)
TC = 25°C
1.0
0.9
0.8
0.7
0.6
10
100
1000
10000
100000
FREQUENCY (Hz)
Figure 16. Typical Total Harmonic Distortion
+50 V
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER
SOURCE
AMPLIFIER
50 W
DUT
0.5 W
0.5 W
DUT
-50 V
Figure 17. Total Harmonic Distortion Test Circuit
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5
8.0 W
100
MJL21193, MJL21194
PACKAGE DIMENSIONS
TO−3BPL (TO−264)
CASE 340G−02
ISSUE J
Q
−T−
0.25 (0.010)
−B−
M
T B
M
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
E
U
N
A
R
1
2
L
3
P
F 2 PL
K
W
J
H
G
D 3 PL
0.25 (0.010)
M
T B
S
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
U
W
MILLIMETERS
MIN
MAX
28.0
29.0
19.3
20.3
4.7
5.3
0.93
1.48
1.9
2.1
2.2
2.4
5.45 BSC
2.6
3.0
0.43
0.78
17.6
18.8
11.2 REF
4.35 REF
2.2
2.6
3.1
3.5
2.25 REF
6.3 REF
2.8
3.2
INCHES
MIN
MAX
1.102
1.142
0.760
0.800
0.185
0.209
0.037
0.058
0.075
0.083
0.087
0.102
0.215 BSC
0.102
0.118
0.017
0.031
0.693
0.740
0.411 REF
0.172 REF
0.087
0.102
0.122
0.137
0.089 REF
0.248 REF
0.110
0.125
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
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