^E.fni~C.onauctot iJ10duct*., -One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
N-CHANNEL
POWER MOSFETS
IRF450/451/452/453
FEATURES
Low Ros<on) at high voltage
Improved Inductive ruggedness
Excellent high voltage stability
Fast switching times
Rugged polysillcon gate cell structure
Low Input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3 package (High voltage)
TO-3
PRODUCT SUMMARY
Part Number
Vos
Boston)
ID
IRF250
soov
040
13A
IRF251
450V
0.40
13A
IRF252
500V
0.50
12A
IRF253
450V
0.50
12A
MAXIMUM RATINGS
Symbol
IRF4SO
IRF451
IRF452
IRF4S3
Unit
Drain-Source Voltage (1)
Voss
500
450
500
450
Vdc
Drain-Gate Voltage (Ro8=l.OMn)(l)
VDGR
500
450
500
450
Gate-Source Voltage
Vos
Characteristic
•
Vdc
Vdc
±20
Continuous Drain Current Tc=25°C
to
13
13
12
12
Continuous Drain Current Tc=-100°C
ID
6.0
8.0
7.0
7.0
Adc
IDM
52
52
46
48
Adc
- Drain Current— Pulsed (3)
±1.5
Adc
150
1.2
Watts
wrc
Tj. Tstg
-55 to 150
•c
TL
300
«c
Gate Current— Pulsed
ISM
Total Power Dissipation © To=25«C
Derate above 25°C
Po
Operating and Storage •
Junction Temperature Range
Maximum Lead Temp, for Soldering
Purposes, 1/8" from case for 5 seconds
Adc
.
Notes: (1) Tj=26°Cto 150°C
(2) Pulse tost: Pulse width<300jjs, Duty Cycled2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use,
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IRF450/451/452/453
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise.speomea,
Characteristic
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Symbol
BVoss
Type
Mln
Typ
IRF450
500
IRF452
-
-
V
Vas-OV
IRF461
460
IRF453
-
-
V
ID=250(/A
_
—
—
-100
IRF450
13
IRF451
IRF4S2
12
IRF453
Vos(lh|
ALL
2.0
Gate-Source Leakage Forward
loss
ALL
Gate-Source Leakage Reverse
loss
ALL
_
Zero Gate Voltage
Drain Current
On-State Drain-Source
Current (2)
loss
ALL
gis
ALL
Input Capacitance
Ci»
ALL
Output Capacitance
COM
Reverse Transfer Capacitance
Cnu
Turn-On Delay Time
4.0
V
VDS=VQS, IID-250HA
100
nA
Vos=20V
nA
Vos--20V
fA
VDs=Max. Rating, Vos-OV
1000
HA
Vos=Max. RatingXO.8. Vss-OV. Tc-126-C
-
-
A
-
-
A
0.38
0.4
0
0.4
0.5
Q
6.0 10.8
-
IRF450
IRF451
Static Drain-Source On-State
RoSfonl
Resistance (Z)
IRF4S2
IRF453
Forward Transconductance (2)
Test Conditions
250
—
—
lu<on)
Max Units
VDS>lD(on)XRDS|on)m«., Vos=10V
Vos=10V, ID=7.0A
0
VDS>lo(on)XRoS(on»nM..
to=7.0A
- 2850 3000
PF
ALL
—
3SO
PF Vos=OV, VDs=25V, f= 1.0MHz
ALL
—
160 •200
td(on)
ALL
-
t,
ALL
td«jit)
ALL
tl
ALL
QQ
ALL
Gate-Source Charge
Qa*
•ALL
Gate-Drain ("Miller") Charge
0*
ALL
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge .
Gate-Source Plus Gate-Drain)
:
—
-
600
PF
—
35
ns
—
50
ns
-
150
ns
-
70
ns
77
120
11
—
66
-
VoD-O.SBVoss. lo=7.0A, Z0=4.7 Q
(MOSFET switching times are essentially
Independent of operating temperature.)
nC VGS=10V, ID=16A, Vos-0.8 Max. Rating
(Gate charge is essentially Independent of
nC operating temperature. See Fig. 8 page 21
nC
THERMAL RESISTANCE
Junction-to-Case
Riwc
ALL
Case-to-SInk
Rtnos
ALL
Junc(ion-to- Ambient
R«DA
ALL
—
—
-
—
0.83
K/W
0.1
—
Km
-
30
K/W Free Air Operation
Mounting surface flat, smooth, and greased
Notes: (1) Tj-25°C to 150°C
(2) Pulse test: Pulse width<300ps, Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
N-CHANNEL
POWER MOSFETS
IRF450/451/452/453
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
Symbol Typ*
IRF450
IRF461
Is
IRF452
1RF453
IRF450
IRF451
ISM
IRF452
IRF4.53
IRF460
IRF451
Vso
IRF452
IRF453
Continuous Source Current
(Body Diode)
Pulse Source Current
(Body Diode) (3)
Diode Forward Voltage (2)
Mln TYP
Max Units
Test Conditions
-
-
13
A
—
-
12
A
-
-
52
A
-
-
48
A
-
-
1.4
V
TC=25°C, ls=13A. VQS-OV
- .-
1.3
V
Tc-25°C. ls-12A, Vos=OV
Modified MOSFET symbol
showing the Integral
reverse P-N junction rectifier
__
Reverse Recovery Time
ALL • - 1300
ns Tj=150i'C. IF-13A, dlp/dt= 100 A/us
tr
Notas: (1) Tj=26°C to 150'C (2) Pulse test: Pulse wldth«300us, Duty Cycle<:2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
^"'j
r
<KV> Puta
T«I
t6V
VM- 8V
10
Vrti- 46V
Vnl-
0
60
100
150
200
250
30<
VDS. DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Vut. OATE-TO^OURCE VOLTAOE (VOLTS)
Typical Transfer Characteristics
Typical Output Characteristics
i
2
3
VD9, DRAIN-TO-SOuncE VOLTAGE (VOLTS)
Typical Saturation Characteristics
" l 0 2
6
10 20
10
100 200 600
Vos. ODAIN-TO-SOURCE VOLTAOE (VOLTS)
Maximum Sato Optratlng Am
s
I