Jiangsu BD135 To-126 plastic-encapsulate transistor Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
BD135 / BD137 / BD139
TRANSISTOR (NPN)
FEATURES
z High Current
z Complement To BD136, BD138 And BD140
TO – 126
1. EMITTER
2. COLLECTOR
3. BASE
Equivalent Circuit
BD137
zXXX
BD135
zXXX
BD139
zXXX
BD135,BD137,BD139 'HYLFHFoGH
Solid dot = Green molding compound device,
if none, the normal device
;;; &ode
ORDERING INFORMATION
Part Number
Package
Packing Method
Pack Quantity
BD135
TO-126
Bulk
200pcs/Bag
BD137
TO-126
Bulk
200pcs/Bag
BD139
TO-126
Bulk
200pcs/Bag
BD135-TU
TO-126
Tube
60pcs/Tube
BD137-TU
TO-126
Tube
60pcs/Tube
BD139-TU
TO-126
Tube
60pcs/Tube
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Value
BD135
45
BD137
60
BD139
80
BD135
45
BD137
60
BD139
80
Emitter-Base Voltage
5
Unit
V
V
V
IC
Collector Current
1.5
A
PC
Collector Power Dissipation
1.25
W
Thermal Resistance From Junction To Ambient
100
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
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1
D,Aug,2017
Ta =25 Я unless otherwise specified
Parameter
Symbol
Collector-base breakdown voltage
Test
V(BR)CBO
conditions
Min
BD135
45
BD137
60
BD139
Collector-emitter sustaining voltage
Max
Unit
V
80
*
VCEO(SUS)
IC=0.03A,IB=0
BD135
45
BD137
60
BD139
Emitter-base breakdown voltage
Typ
IC= 0.1mA,IE=0
V
80
5
V(BR)EBO
IE=0.1mA,IC=0
Collector cut-off current
ICBO
VCB=30V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
10
μA
*
hFE(1)
*
hFE(2)
*
hFE(3)
DC current gain
Collector-emitter saturation voltage
*
VCE(sat)
VBE
Base-emitter voltage
*
VCE=2V, IC=150mA
40
VCE=2V, IC=5mA
25
VCE=2V, IC=500mA
25
V
250
IC=500mA,IB=50mA
0.5
V
VCE=2V, IC=500mA
1
V
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE(1)
RANK
6
10
16
RANGE
40-100
63-160
100-250
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2
D,Aug,2017
Typical Characteristics
Static Characteristic
0.30
COMMON
EMITTER
Ta=25℃
hFE
350
0.8mA
0.7mA
0.15
0.6mA
0.5mA
0.10
0.4mA
0.3mA
0.05
1.0
1.5
2.0
2.5
3.0
3.5
COLLECTOR-EMITTER VOLTAGE
4.0
VCE
4.5
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
1000
900
Ta=25℃
800
700
Ta=100℃
VCEsat ——
IC
1000 1500
(mA)
IC
β=10
300
250
200
Ta=100℃
150
100
Ta=25℃
50
500
400
10
0
10
1000 1500
100
COLLECTOR CURRENT
IC
1000 1500
100
(mA)
COLLECTOR CURRENT
IC——VBE
1500
Pc
1600
——
IC
(mA)
Ta
COLLECTOR POWER DISSIPATION
Pc (mW)
VCE=2V
IC (mA)
COLLECTOR CURRENT
100
COLLECTOR CURRENT
350
β=10
1000
150
(V)
1100
600
o
Ta=25 C
200
0
10
5.0
VBEsat —— IC
1200
250
50
IB=0.1mA
0.5
300
100
0.2mA
0.00
0.0
o
Ta=100 C
400
0.9mA
0.20
VCE= 2V
450
1mA
DC CURRENT GAIN
COLLECTOR CURRENT
IC
(A)
0.25
hFE —— IC
500
o
Ta=100 C
Ta=25℃
100
1400
1200
1000
800
600
400
200
0
10
400
600
BASE-EMITTER VOLTAGE
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800
1000
0
25
50
75
AMBIENT TEMPERATURE
VBE(mV)
3
125
100
Ta
150
(℃ )
D,Aug,2017
TO-126 Package Outline Dimensions
Symbol
A
A1
b
b1
c
D
E
e
e1
h
L
L1
P
Φ
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Dimensions In Millimeters
Min
Max
2.500
2.900
1.100
1.500
0.660
0.860
1.170
1.370
0.450
0.600
7.400
7.800
10.600
11.000
2.290 TYP
4.480
4.680
0.000
0.300
15.300
15.700
2.100
2.300
3.900
4.100
3.000
3.200
4
Dimensions In Inches
Min
Max
0.098
0.114
0.043
0.059
0.026
0.034
0.046
0.054
0.018
0.024
0.291
0.307
0.417
0.433
0.090 TYP
0.176
0.184
0.000
0.012
0.602
0.618
0.083
0.091
0.154
0.161
0.118
0.126
D,Aug,2017
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