EIC ABR806 Avalanche bridge rectifier Datasheet

ABR800 - ABR810
AVALANCHE BRIDGE
RECTIFIERS
PRV : 50 - 1000 Volts
Io : 8.0 Amperes
BR10
0.520 (13.20)
0.480 (12.20)
FEATURES :
*
*
*
*
*
*
0.158 (4.00)
0.142 (3.60)
High case dielectric strength
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
ldeal for printed circuit board
AC
0.77 (19.56)
0.73 (18.54)
0.290 (7.36)
0.210 (5.33)
AC
0.052 (1.32)
0.048 (1.22)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 6.1 grams
0.75 (19.1)
Min.
0.30 (7.62)
0.25 (6.35)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
VRRM
ABR
800
50
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
Volts
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
Volts
Minimum Avalanche Breakdown Voltage at 100 µA
VBO(min.)
100
150
250
450
700
900
1100
Volts
Maximum Avalanche Breakdown Voltage at 100 µA
VBO(max.)
550
600
700
900
1150
1350
1550
Volts
RATING
SYMBOL
Maximum Average Forward Current Tc = 50°C
ABR
801
100
ABR
802
200
ABR
804
400
ABR
806
600
ABR
808
800
ABR
810
1000
UNITS
Volts
IF(AV)
8.0
Amp.
IFSM
300
Amps.
2
It
160
A2S
VF
1.0
Volts
IR
10
µA
IR(H)
10.0
mA
RθJC
2.5
°C/W
TJ
- 50 to + 150
°C
TSTG
- 50 to + 150
°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing at ( t < 8.3 ms. )
Maximum Forward Voltage per Diode at IF = 4.0 Amps.
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance
( Note 1 )
Operating Junction Temperature Range
Storage Temperature Range
Notes : 1 ) Thermal resistance from Junction to case with units mounted on a 3.2" x 3.2" x 0.12" ( 8.2 x 8.2 x 0.3 cm ) Al. plate. heatsink.
UPDATE : APRIL 21, 1998
RATING AND CHARACTERISTIC CURVES ( ABR800 - ABR810)
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
300
PEAK FORWARD SURGE
CURRENT, AMPERES
CURRENT, AMPERES
HEAT-SINK MOUNTED ON
3.2" x 3.2" x0.12"
(8.2x8.2x0.3 cm.) Al. PLATE
8.0
6.0
4.0
2.0
0
0
25
50
75
100
125
150
240
180
120
0
175
8.3 ms SINGLE SINE WAVE
JEDEC METHOD
60
1
CASE TEMPERATURE, ( °C)
2
4
6
10
20
40
60
100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
REVERSE CURRENT, MICROAMPERES
PER DIODE
100
FORWARD CURRENT, AMPERES
AVERAGE FORWARD OUTPUT
10
TJ = 25 °C
10
1.0
Pulse Width = 300 µs
1% Duty Cycle
0.1
10
TJ = 100 °C
1.0
0.1
TJ = 25 °C
0.01 0
20
40
60
80
100
120
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
FORWARD VOLTAGE, VOLTS
1.8
2.0
140
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