RF EEV-TG2A101M 30w gan wideband power amplifier Datasheet

RF3931
30W GaN WIDEBAND POWER AMPLIFIER
Package Style: Hermetic 2-Pin Flanged Ceramic
Features





Broadband Operation DC to
3.5GHz
Advanced GaN HEMT
Technology
Advanced Heat-Sink
Technology
Gain = 15dB at 2GHz
48V Operation Typical
Performance at 900MHz
RF IN
VGQ
Pin 1 (CUT)
RF OUT
VDQ
Pin 2
GND
BASE
• Output Power 50W
• Drain Efficiency 65%
Functional Block Diagram
• -40°C to 85°C Operation
Product Description
Applications






Commercial Wireless
Infrastructure
Cellular and WiMAX
Infrastructure
Civilian and Military Radar
General Purpose Broadband
Amplifiers
Public Mobile Radios
Industrial, Scientific and
Medical
The RF3931 is a 48V 30W high power discrete amplifier designed for commercial
wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier applications. Using an
advanced high power density Gallium Nitride (GaN) semiconductor process, these
high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RF3931 is an unmatched GaN transistor packaged in a hermetic, flanged ceramic package. This package provides
excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation
of simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier.
Ordering Information
RF3931S2
2-Piece sample bag
RF3931SB
5-Piece bag
RF3931SQ
25-Piece bag
RF3931SR
100 Pieces on 7” short reel
RF3931TR7
750 Pieces on 7” reel
RF3931PCK-411 Fully assembled evaluation board optimized for 2.14GHz; 48V
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
DS120406
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 14
RF3931
Absolute Maximum Ratings
Parameter
Rating
Unit
Drain Voltage (VD)
150
V
Gate Voltage (VG)
-8 to +2
V
Gate Current
23
mA
Operational Voltage
65
V
Ruggedness (VSWR)
10:1
Storage Temperature Range
-55 to +125
°C
Operating Temperature Range (TL)
-40 to +85
°C
200
°C
Operating Junction Temperature (TJ)
Human Body Model
Class 1A
MTTF (TJ < 200°C, 95% Confidence Limits)*
3 x 106
hours
3.6
°C/W
Thermal Resistance, RTH(junction to case)
measured at TC = 85°C, DC bias only
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
*MTTF - median time to failure for wear-out failure mode (30%ldss
degradation) which is determined by the technology reliability. Refer to
product qualification report for FIT (random) Failure rate.
Operation of this device beyond any one of these limits may cause permanent
damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table on page
two.
Bias Conditions should also satisfy the following expression:
PDISS < (TJ – TC) / RTH J-C and TC = TCASE
Specification
Min.
Typ.
Max.
Parameter
Unit
Condition
Recommended Operating Conditions
Drain Voltage (VDSQ)
28
Gate Voltage (VGSQ)
-5
Drain Bias Current
-3
48
V
-2.5
V
3500
MHz
130
Frequency of Operation
DC
mA
Capacitance
CRSS
4
pF
VG = -8V, VD = 0V
CISS
17
pF
VG = -8V, VD = 0V
COSS
12
pF
VG = -8V, VD = 0V
2
mA
VG = -8V, VD = 0V
2.5
mA
VG = -8V, VD = 48V
DC Function Test
IG (OFF) - Gate Leakage
ID (OFF) - Drain Leakage
VGS (TH) - Threshold Voltage
-4.2
V
VDS (ON) - Drain Voltage at high current
0.25
V
RF Function Test
Gain
10
Drain efficiency
55
2 of 14
VG = 0V, ID = 1.5A
[1],[2]
VGS (Q)
Input Return Loss
VG = -8V, ID = 6.6mA
-3.5
V
12
dB
CW, POUT = 45.8dBm, f = 2140MHz
%
CW, POUT = 45.8dBm, f = 2140MHz
dB
CW, POUT = 45.8dBm, f = 2140MHz
60
-12
-10
VD = 48V, ID = 130mA
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120406
RF3931
Specification
Min.
Typ.
Max.
Unit
Small Signal Gain
20
dB
Small Signal Gain
14
dB
CW, f = 2140MHz
Output Power at P3dB
47
dBm
CW, f = 900MHz
Output Power at P3dB
CW, f = 2140MHz
Parameter
RF Typical Performance
Condition
[1],[2]
CW, f = 900MHz
46.5
dBm
Drain Efficiency at P3dB
65
%
CW, f = 900MHz
Drain Efficiency at P3dB
65
%
CW, f = 2140MHz
[1] Test Conditions: CW Operation, VDSQ = 48V, IDQ = 130mA, T = 25°C
[2] Performance in a standard tuned test fixture
DS120406
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
3 of 14
RF3931
Typical Performance in standard 2.14GHz fixed tuned test fixture
(CW, T = 25°C, unless noted)
Small Signal Performance vs. Frequency, Pout = 30dBm
(Vd = 48V, Idq = 130mA)
16
-5
Fixed tuned test circuit
-7
14
-9
13
-11
12
-13
11
-15
10
-17
9
-19
8
Gain
-21
IRL
7
-23
6
2080
2110
2140
Frequency (MHz)
(CW, Vd = 48V, Idq = 130mA)
(CW, Vd = 48V, Idq = 130mA)
-9
-11
11
-13
10
-15
9
-17
8
-19
7
-21
IRL
6
58
Drain Efficiency (%)
13
4 of 14
Fixed tuned test circuit
-7
Input Return Loss (dB)
Gain (dB)
Fixed tuned test circuit
12
5
2080
60
-5
Gain
-25
2200
2170
Drain Efficiency vs. Frequency, Pout = 46dBm
Gain/IRL vs. Frequency, Pout = 46dBm
15
14
Input Return Loss (dB)
Gain (dB)
15
56
54
Eff
52
-23
2100
2120
2140
2160
Frequency (MHz)
2180
-25
2200
50
2080
2100
2120
2140
2160
Frequency (MHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
2180
2200
DS120406
RF3931
Gain/ Efficiency vs. Pout, f = 2140MHz
Gain/ Efficiency vs. Pout, f = 2140MHz
70
14
60
14
60
12
50
12
50
10
40
10
40
8
30
8
30
6
Drain Eff
2
29
31
33
35
37
39
41
Pout, Output Power (dBm)
43
6
Gain
20
10
4
Drain Eff
10
0
2
20
Gain
4
Gain (dB)
16
45
47
0
30
32
34
36
38
40
Pout, Output Power (dBm)
IMD3 vs. Pout
42
44
46
Gain vs. Pout
(2-Tone 1MHz Seperaon, Vd = 48V, Idq varied, fc = 2140MHz)
(2-Tone 1MHz Seperaon, Vd = 48V, Idq varied, fc = 2140MHz)
-10
18
65mA
-15
17
100mA
-20
130mA
-25
390mA
16
260mA
15
Gain (dB)
IMD3, Intermodulaon Distoron (dBc)
Drain Efficiency (%)
(Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 130mA)
70
Drain Efficiency (%)
Gain (dB)
(CW, Vd = 48V, Idq = 130mA)
16
-30
-35
14
13
65mA
100mA
12
130mA
-40
-45
260mA
11
390mA
-50
1
10
100
10
1
Pout, Output Power (W-PEP)
10
100
Pout, Output Power (W-PEP)
IMD vs. Output Power
(Vd = 48V, Idq = 130mA, f1 = 2139.5MHz, f2 = 2140.5MHz)
Intermodulaon Distoron (IMD - dBc)
0
-10
-IMD3
IMD3
-IMD5
IMD5
-IMD7
IMD7
-20
-30
-40
-50
-60
-70
1
DS120406
10
Pout, Output Power (W- PEP)
100
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 14
RF3931
Typical Performance in standard 900MHz fixed tuned test fixture
(CW, T = 25°C, unless noted)
Gain/IRL vs. Frequency, Pout = 47dBm
Small Signal Performance vs. Frequency, Pout = 30dBm
(CW, Vd = 48V, Idq = 130mA)
(Vd = 48V, Idq = 130mA)
-1
21
20
-2
20
-2
19
-3
19
-3
18
-4
18
-4
17
-5
17
-5
-6
15
Gain
-7
IRL
16
14
-8
13
-9
13
12
-10
12
890
900
Frequency (MHz)
910
-6
15
14
880
Gain
-7
IRL
-8
-9
-10
880
920
890
900
Frequency (MHz)
910
920
Gain/ Efficiency vs. Pout, f = 900MHz
Drain Efficiency vs. Frequency, Pout = 47dBm
(CW, Vd = 48V, Idq = 130mA)
(CW, Vd = 48V, Idq = 130mA)
70
Fixed tuned test circuit
68
22
70
21
60
20
50
19
66
Gain (dB)
Drain Efficiency (%)
-1
64
40
18
30
17
Eff
16
20
Gain
62
Drain Eff
15
10
14
60
880
6 of 14
890
900
Frequency (MHz)
910
920
Drain Efficiency (%)
Gain (dB)
16
0
Fixed tuned test circuit
Input Return Loss (dB)
Fixed tuned test circuit
21
Gain (dB)
22
Input Return Loss (dB)
0
22
0
29
31
33
35
37
39
41
Pout, Output Power (dBm)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
43
45
47
DS120406
RF3931
IMD3 vs. Pout
Gain vs. Pout
(2-Tone 1MHz Seperaon, Vd = 48V, Idq varied, fc = 900MHz)
(2-Tone 1MHz Seperaon, Vd = 48V, Idq varied, fc = 900MHz)
22
65mA
-15
21
100mA
130mA
-20
20
260mA
390mA
-25
Gain (dB)
IMD3, Intermodulaon Distoron (dBc)
-10
-30
-35
19
18
65mA
-40
17
-45
16
100mA
130mA
260mA
390mA
-50
1
10
15
100
1
Pout, Output Power (W-PEP)
10
100
Pout, Output Power (W-PEP)
IMD vs. Output Power
(Vd = 48V, Idq = 130mA, f1 = 899.5MHz, f2 = 900.5MHz)
0
Intermodulaon Distoron (IMD - dBc)
-IMD3
-10
IMD3
-IMD5
IMD5
-IMD7
IMD7
-20
-30
-40
-50
-60
1
DS120406
10
Pout, Output Power (W- PEP)
100
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
7 of 14
RF3931
Package Drawing
(Package Style: Flanged Ceramic)
8 of 14
Pin
Function
Description
1
2
3
Gate
Drain
Source
Gate - VG RF Input
Drain - VD RF Output
Source - Ground Base
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120406
RF3931
Bias Instruction for RF3931 Evaluation Board
ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board.
Evaluation board requires additional external fan cooling.
Connect all supplies before powering up the evaluation board.
1. Connect RF cables at RFIN and RFOUT.
2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this
ground terminal.
3. Apply -8V to VG.
4. Apply 48V to VD.
5. Increase VG until drain current reaches 130mA desired bias point.
6. Turn on the RF input.
DS120406
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
9 of 14
RF3931
2.14GHz Evaluation Board Schematic
9*$7(
9'5$,1
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&
&
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VWULS
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2.14GHz Evaluation Board Bill of Materials
Component
10 of 14
Value
Manufacturer
Part Number
C1, C2, C10, C11
33pF
ATC
ATC800A330JT
C3,C14
0.1F
Murata
GRM32NR72A104KA01L
C4,C13
4.7F
Murata
GRM55ER72A475KA01L
C5
100F
Panasonic
ECE-V1HA101UP
C6
2.2pF
ATC
ATC800A2R2BT
C7
0.7pF
ATC
ATC800A0R7BT
C8
1.0pF
ATC
ATC800A1R0BT
C9
3.3pF
ATC
ATC800A3R3BT
C12
100F
Panasonic
EEV-TG2A101M
C15
10pF
ATC
ATC800A100JT
R1
10
Panasonic
ERJ-8GEYJ100V
C16, C17, C18, C19
Not used
-
-
PCB
RO4350, 0.030" thick
dielectric
Rogers
-
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120406
RF3931
2.14GHz Evaluation Board Layout
Device Impedances
Frequency (MHz)
Z Source ()
Z Load (
2110
2.6 - j3.1
6.5 + j5.8
2140
2.5 - j2.8
6.7 + j6.6
2170
2.4 - j2.5
7.0 + j7.4
Note: Device impedances reported are the measured evaluation board impedances chosen for a trade off of efficiency, peak power, and linearity
performance across the entire frequency bandwidth.
DS120406
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
11 of 14
RF3931
900MHz Evaluation Board Schematic
VGATE
VDRAIN
C5
C4
C3
C11
C1
50
strip
RF3931
+
C2
C7
+
C13
C12
C10
R1
J1
RF IN
C14
50
C8
strip
J2
RF OUT
C9
C6
900MHz Evaluation Board Bill of Materials
Component
12 of 14
Value
Manufacturer
Part Number
C1, C2, C10, C11
68pF
ATC
ATC800B680JT
C3,C14
0.1F
Murata
GRM32NR72A104KA01L
C4,C13
4.7F
Murata
GRM55ER72A475KA01L
C5
100F
Panasonic
ECE-V1HA101UP
C6
12pF
ATC
ATC800B120
C7
5.6pF
ATC
ATC800B5R6
C8
6.8pF
ATC
ATC800B6R8
C9
2.0pF
ATC
ATC800B2R0
C12
330F
Panasonic
EEU-FC2A331
R1
10
Panasonic
ERJ-8GEYJ100V
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120406
RF3931
900MHz Evaluation Board Layout
Device Impedances
Frequency (MHz)
Z Source ()
Z Load (
880
4.2 + j9.0
12.9 + j14.2
900
4.3 + j10.0
13.6 + j15.1
920
4.4 + j11.3
14.4 + j16.0
Note: Device impedances reported are the measured evaluation board impedances chosen for a trade off of efficiency, peak power, and linearity
performance across the entire frequency bandwidth.
Loadpull contours available on RFMD website.
DS120406
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
13 of 14
RF3931
Device Handling/Environmental Conditions
GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or
evaluation boards.
GaN HEMT Capacitances
The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies.
These capacitances exist across all three terminals of the device. The physical manufactured characteristics of
the device determine the value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These
capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances
measured with the gate pinched off (VGS = -8V) and zero volts applied to the drain. During the measurement process, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step.
Any internal matching is included in the terminal capacitance measurements. The capacitance values presented
in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse
(CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows:
CISS = CGD + CGS
COSS = CGD + CDS
CRSS = CGD
DC Bias
The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of
the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken
to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care
not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS.
RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain
current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the
operational characteristics for this device, considering manufacturing variations and expected performance.
The user may choose alternate conditions for biasing this device based on performance trade off.
Mounting and Thermal Considerations
The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of
the die. At the same time, the package temperature is measured using a thermocouple touching the backside of
the die embedded in the device heatsink but sized to prevent the measurement system from impacting the
results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated.
In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or
below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the
thermal resistance from ambient to the back of the package including heatsinking systems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device.
14 of 14
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120406
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