MMBT489LT1 High Current Surface Mount NPN Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS 2.0 AMPS NPN TRANSISTOR MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO 30 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 1.0 A ICM 2.0 A Symbol Max Unit PD (Note 1) 310 mW 2.5 mW/°C RθJA (Note 1) 403 °C/W PD (Note 2) 710 mW 2 5.7 mW/°C RθJA (Note 2) 176 °C/W SOT−23 (TO−236) CASE 318−08 STYLE 6 Total Device Dissipation (Single Pulse < 10 sec.) PDsingle 575 mW Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Collector Current − Continuous Collector Current − Peak COLLECTOR 3 1 BASE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient 2 EMITTER 3 1 DEVICE MARKING 3 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 X 1.0 inch Pad N3 2 1 N3 = Specific Device Code ORDERING INFORMATION Device MMBT489LT1 Semiconductor Components Industries, LLC, 2003 July, 2003 − Rev. 3 1 Package Shipping SOT−23 3000/Tape & Reel Publication Order Number: MMBT489LT1/D MMBT489LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 30 − 50 − 5.0 − − 0.1 − 0.1 − 0.1 300 300 200 − 900 − − − − 0.200 0.125 0.075 − 1.1 − 1.1 100 − − 15 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector−Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO Collector−Emitter Cutoff Current (VCES = 30 Vdc) ICES Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO Vdc Vdc Vdc Adc Adc Adc ON CHARACTERISTICS DC Current Gain (Note 1) (IC = 50 mA, VCE = 5.0 V) (IC = 0.5 A, VCE = 5.0 V) (IC = 1.0 A, VCE = 5.0 V) hFE Collector −Emitter Saturation Voltage (Note 1) (IC = 1.0 A, IB = 100 mA) (IC = 0.5 A, IB = 50 mA) (IC = 0.1 A, IB = 1.0 mA) VCE(sat) Base −Emitter Saturation Voltage (Note 1) (IC = 1.0 A, IB = 0.1 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 1) (IC = 1.0 mA, VCE = 2.0 V) VBE(on) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz V V V fT Output Capacitance (f = 1.0 MHz) MHz Cobo pF 1. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle ≤ 2% 1.0 1.0 0.9 0.8 0.7 0.8 0.7 IC = 1 A 0.6 VCE (V) VCE (V) 0.9 IC = 2 A 0.5 0.4 0.3 0 0.5 Ic/Ib = 100 0.4 0.3 IC = 500 mA 0.2 0.1 0.6 0.1 IC = 100 mA 0.001 Ic/Ib = 10 0.2 0.01 Ib (A) 0.1 0 0.2 0.001 0.01 0.1 Ic (A) Figure 1. VCE versus Ib Figure 2. VCE versus Ic http://onsemi.com 2 1 2 MMBT489LT1 800 1.2 VCE = 5 V 700 VCE = 5 V +125°C 1.0 600 0.8 VBE(on) (V) +25°C hFE 500 400 300 −55°C −55°C +25°C 0.6 0.4 +125°C 200 0.2 100 0 0.001 0.01 0.1 1 0 2 0.001 0.01 Ic (A) Figure 3. hFE versus Ic 1 IC COLLECTOR CURRENT (A) 10 1.0 Ic/Ib = 10 0.8 Ic/Ib = 100 0.6 0.4 0.2 1 1 ms 10 ms 100 ms 0.1 1s SINGLE PULSE Tamb = 25°C 0 2 Figure 4. VBE(on) versus Ic 1.2 VBE (V) 0.1 Ic (A) 0.001 0.01 0.1 1 0.01 2 0.1 1 Ic (A) 0.2 100 VCE (V) Figure 5. VBE(sat) versus Ic 0.5 dc 10 Figure 6. Safe Operating Area 0.1 1.0E+00 0.05 0.02 Rthja , (t) 1.0E−01 D = 0.01 1.0E−02 r(t) 1.0E−03 1E−05 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 Figure 7. Normalized Thermal Response http://onsemi.com 3 10 100 1000 MMBT489LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−03 AND −07 OBSOLETE, NEW STANDARD 318−08. A L 3 1 V B S 2 G C D H J K DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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