ON MMBT489LT1 High current surface mount npn silicon switching transistor for load management in portable application Datasheet

MMBT489LT1
High Current Surface
Mount NPN Silicon
Switching Transistor for
Load Management in
Portable Applications
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30 VOLTS
2.0 AMPS
NPN TRANSISTOR
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
30
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
1.0
A
ICM
2.0
A
Symbol
Max
Unit
PD (Note 1)
310
mW
2.5
mW/°C
RθJA (Note 1)
403
°C/W
PD (Note 2)
710
mW
2
5.7
mW/°C
RθJA (Note 2)
176
°C/W
SOT−23 (TO−236)
CASE 318−08
STYLE 6
Total Device Dissipation
(Single Pulse < 10 sec.)
PDsingle
575
mW
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Collector Current − Continuous
Collector Current − Peak
COLLECTOR
3
1
BASE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
2
EMITTER
3
1
DEVICE MARKING
3
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 X 1.0 inch Pad
N3
2
1
N3 = Specific Device Code
ORDERING INFORMATION
Device
MMBT489LT1
 Semiconductor Components Industries, LLC, 2003
July, 2003 − Rev. 3
1
Package
Shipping
SOT−23
3000/Tape & Reel
Publication Order Number:
MMBT489LT1/D
MMBT489LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
30
−
50
−
5.0
−
−
0.1
−
0.1
−
0.1
300
300
200
−
900
−
−
−
−
0.200
0.125
0.075
−
1.1
−
1.1
100
−
−
15
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
Collector−Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
Collector−Emitter Cutoff Current
(VCES = 30 Vdc)
ICES
Emitter Cutoff Current
(VEB = 4.0 Vdc)
IEBO
Vdc
Vdc
Vdc
Adc
Adc
Adc
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 50 mA, VCE = 5.0 V)
(IC = 0.5 A, VCE = 5.0 V)
(IC = 1.0 A, VCE = 5.0 V)
hFE
Collector −Emitter Saturation Voltage (Note 1)
(IC = 1.0 A, IB = 100 mA)
(IC = 0.5 A, IB = 50 mA)
(IC = 0.1 A, IB = 1.0 mA)
VCE(sat)
Base −Emitter Saturation Voltage (Note 1)
(IC = 1.0 A, IB = 0.1 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 1)
(IC = 1.0 mA, VCE = 2.0 V)
VBE(on)
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz
V
V
V
fT
Output Capacitance (f = 1.0 MHz)
MHz
Cobo
pF
1. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle ≤ 2%
1.0
1.0
0.9
0.8
0.7
0.8
0.7
IC = 1 A
0.6
VCE (V)
VCE (V)
0.9
IC = 2 A
0.5
0.4
0.3
0
0.5
Ic/Ib = 100
0.4
0.3
IC = 500 mA
0.2
0.1
0.6
0.1
IC = 100 mA
0.001
Ic/Ib = 10
0.2
0.01
Ib (A)
0.1
0
0.2
0.001
0.01
0.1
Ic (A)
Figure 1. VCE versus Ib
Figure 2. VCE versus Ic
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2
1
2
MMBT489LT1
800
1.2
VCE = 5 V
700
VCE = 5 V
+125°C
1.0
600
0.8
VBE(on) (V)
+25°C
hFE
500
400
300
−55°C
−55°C
+25°C
0.6
0.4
+125°C
200
0.2
100
0
0.001
0.01
0.1
1
0
2
0.001
0.01
Ic (A)
Figure 3. hFE versus Ic
1
IC COLLECTOR CURRENT (A)
10
1.0
Ic/Ib = 10
0.8
Ic/Ib = 100
0.6
0.4
0.2
1
1 ms
10 ms
100 ms
0.1
1s
SINGLE PULSE Tamb = 25°C
0
2
Figure 4. VBE(on) versus Ic
1.2
VBE (V)
0.1
Ic (A)
0.001
0.01
0.1
1
0.01
2
0.1
1
Ic (A)
0.2
100
VCE (V)
Figure 5. VBE(sat) versus Ic
0.5
dc
10
Figure 6. Safe Operating Area
0.1
1.0E+00
0.05
0.02
Rthja , (t)
1.0E−01
D = 0.01
1.0E−02
r(t)
1.0E−03
1E−05
0.0001
0.001
0.01
0.1
t, TIME (sec)
1.0
Figure 7. Normalized Thermal Response
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3
10
100
1000
MMBT489LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
A
L
3
1
V
B S
2
G
C
D
H
J
K
DIM
A
B
C
D
G
H
J
K
L
S
V
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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4
MMBT489LT1/D
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