HFA3046, HFA3096, HFA3127, HFA3128 Data Sheet October 1998 File Number 3076.10 Ultra High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications. • NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPNPNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors. For PSPICE models, please request AnswerFAX document number 663046. Intersil also provides an Application Note illustrating the use of these devices as RF amplifiers (request AnswerFAX document 99315). TEMP. RANGE (oC) • NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 50V • PNP Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz • PNP Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 60 • PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 20V • Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB • Collector-to-Collector Leakage. . . . . . . . . . . . . . . . . <1pA • Complete Isolation Between Transistors • Pin Compatible with Industry Standard 3XXX Series Arrays Applications • VHF/UHF Amplifiers • VHF/UHF Mixers • IF Converters • Synchronous Detectors Ordering Information PART NUMBER • NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . 130 PKG. NO. PACKAGE HFA3046B -55 to 125 14 Ld SOIC M14.15 HFA3096B -55 to 125 16 Ld SOIC M16.15 HFA3127B -55 to 125 16 Ld SOIC M16.15 HFA3128B -55 to 125 16 Ld SOIC M16.15 Pinouts HFA3046 TOP VIEW 1 2 Q1 Q5 3 4 HFA3096 TOP VIEW 14 1 13 2 Q1 Q5 3 12 4 Q2 11 5 5 Q4 10 6 9 7 8 Q3 Q2 Q4 6 7 8 3-447 Q3 HFA3127 TOP VIEW 16 NC 1 15 2 14 3 13 4 12 HFA3128 TOP VIEW 16 1 15 2 14 3 13 4 NC 5 12 NC 5 12 11 6 11 6 11 10 7 10 7 9 8 Q1 Q2 Q3 Q5 Q4 9 8 16 Q1 15 14 Q2 Q5 13 10 Q3 Q4 9 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 HFA3046, HFA3096, HFA3127, HFA3128 Absolute Maximum Ratings Thermal Information Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . . . . . . 8V Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . 12V Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 5.5V Collector Current (100% Duty Cycle) . . . . . 18.5mA at TJ = 150oC 34mA at TJ = 125oC 37mA at TJ = 110oC Peak Collector Current (Any Condition) . . . . . . . . . . . . . . . . . . 65mA Thermal Resistance (Typical, Note 1) θJA (oC/W) 14 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . 120 16 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . 115 Maximum Power Dissipation (Any One Transistor) . . . . . . . . 0.15W Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . 175oC Maximum Junction Temperature (Plastic Package) . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) Operating Information Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. θJA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications TA = 25oC DIE PARAMETER TEST CONDITIONS SOIC MIN TYP MAX MIN TYP MAX UNITS DC NPN CHARACTERISTICS Collector-to-Base Breakdown Voltage, V(BR)CBO IC = 100µA, IE = 0 12 18 - 12 18 - V Collector-to-Emitter Breakdown Voltage, V(BR)CEO IC = 100µA, IB = 0 8 12 - 8 12 - V Collector-to-Emitter Breakdown Voltage, V(BR)CES IC = 100µA, Base Shorted to Emitter 10 20 - 10 20 - V Emitter-to-Base Breakdown Voltage, V(BR)EBO IE = 10µA, IC = 0 5.5 6 - 5.5 6 - V Collector-Cutoff-Current, ICEO VCE = 6V, IB = 0 - 2 100 - 2 100 nA Collector-Cutoff-Current, ICBO VCB = 8V, IE = 0 - 0.1 10 - 0.1 10 nA Collector-to-Emitter Saturation Voltage, VCE(SAT) IC = 10mA, IB = 1mA - 0.3 0.5 - 0.3 0.5 V Base-to-Emitter Voltage, VBE IC = 10mA - 0.85 0.95 - 0.85 0.95 V DC Forward-Current Transfer Ratio, hFE IC = 10mA VCE = 2V 40 130 - 40 130 - Early Voltage, VA IC = 1mA, VCE = 3.5V 20 50 - 20 50 - V Base-to-Emitter Voltage Drift IC = 10mA - -1.5 - - -1.5 - mV/oC - 1 - - 1 - pA Collector-to-Collector Leakage Electrical Specifications TA = 25oC DIE PARAMETER TEST CONDITIONS SOIC MIN TYP MAX MIN TYP MAX UNITS DYNAMIC NPN CHARACTERISTICS Noise Figure f = 1.0GHz, VCE = 5V, IC = 5mA, ZS = 50Ω - 3.5 - - 3.5 - dB fT Current Gain-Bandwidth Product IC = 1mA, VCE = 5V - 5.5 - - 5.5 - GHz IC = 10mA, VCE = 5V - 8 - - 8 - GHz IC = 10mA, VCE = 5V - 6 - - 2.5 - GHz Power Gain-Bandwidth Product, fMAX 3-448 HFA3046, HFA3096, HFA3127, HFA3128 Electrical Specifications TA = 25oC (Continued) DIE PARAMETER TEST CONDITIONS SOIC MIN TYP MAX MIN TYP MAX UNITS Base-to-Emitter Capacitance VBE = -3V - 200 - - 500 - fF Collector-to-Base Capacitance VCB = 3V - 200 - - 500 - fF Electrical Specifications TA = 25oC DIE PARAMETER TEST CONDITIONS SOIC MIN TYP MAX MIN TYP MAX UNITS DC PNP CHARACTERISTICS Collector-to-Base Breakdown Voltage, V(BR)CBO IC = -100µA, IE = 0 10 15 - 10 15 - V Collector-to-Emitter Breakdown Voltage, V(BR)CEO IC = -100µA, IB = 0 8 15 - 8 15 - V Collector-to-Emitter Breakdown Voltage, V(BR)CES IC = -100µA, Base Shorted to Emitter 10 15 - 10 15 - V Emitter-to-Base Breakdown Voltage, V(BR)EBO IE = -10µA, IC = 0 4.5 5 - 4.5 5 - V Collector-Cutoff-Current, ICEO VCE = -6V, IB = 0 - 2 100 - 2 100 nA Collector-Cutoff-Current, ICBO VCB = -8V, IE = 0 - 0.1 10 - 0.1 10 nA Collector-to-Emitter Saturation Voltage, VCE(SAT) IC = -10mA, IB = -1mA - 0.3 0.5 - 0.3 0.5 V Base-to-Emitter Voltage, VBE IC = -10mA - 0.85 0.95 - 0.85 0.95 V DC Forward-Current Transfer Ratio, hFE IC = -10mA, VCE = -2V 20 60 - 20 60 - Early Voltage, VA IC = -1mA, VCE = -3.5V 10 20 - 10 20 - V Base-to-Emitter Voltage Drift IC = -10mA - -1.5 - - -1.5 - mV/oC - 1 - - 1 - pA Collector-to-Collector Leakage Electrical Specifications TA = 25oC DIE PARAMETER TEST CONDITIONS SOIC MIN TYP MAX MIN TYP MAX UNITS DYNAMIC PNP CHARACTERISTICS Noise Figure f = 1.0GHz, VCE = -5V, IC = -5mA, ZS = 50Ω - 3.5 - - 3.5 - dB fT Current Gain-Bandwidth Product IC = -1mA, VCE = -5V - 2 - - 2 - GHz IC = -10mA, VCE = -5V - 5.5 - - 5.5 - GHz Power Gain-Bandwidth Product IC = -10mA, VCE = -5V - 3 - - 2 - GHz Base-to-Emitter Capacitance VBE = 3V - 200 - - 500 - fF Collector-to-Base Capacitance VCB = -3V - 300 - - 600 - fF 3-449 HFA3046, HFA3096, HFA3127, HFA3128 TA = 25oC Electrical Specifications DIE PARAMETER TEST CONDITIONS SOIC MIN TYP MAX MIN TYP MAX UNITS DIFFERENTIAL PAIR MATCHING CHARACTERISTICS FOR THE HFA3046 Input Offset Voltage IC = 10mA, VCE = 5V - 1.5 5.0 - 1.5 5.0 mV Input Offset Current IC = 10mA, VCE = 5V - 5 25 - 5 25 µA Input Offset Voltage TC IC = 10mA, VCE = 5V - 0.5 - - 0.5 - µV/oC S-Parameter and PSPICE model data is available from Intersil Sales Offices, and Intersil Corporation’s web site. Common Emitter S-Parameters of NPN 3 µm x 50 µm Transistor FREQ. (Hz) |S11| PHASE(S11) |S21| PHASE(S21) |S12| PHASE(S12) |S22| PHASE(S22) VCE = 5V and IC = 5mA 1.0E+08 0.83 -11.78 11.07 168.57 1.41E-02 78.88 0.97 -11.05 2.0E+08 0.79 -22.82 10.51 157.89 2.69E-02 68.63 0.93 -21.35 3.0E+08 0.73 -32.64 9.75 148.44 3.75E-02 59.58 0.86 -30.44 4.0E+08 0.67 -41.08 8.91 140.36 4.57E-02 51.90 0.79 -38.16 5.0E+08 0.61 -48.23 8.10 133.56 5.19E-02 45.50 0.73 -44.59 6.0E+08 0.55 -54.27 7.35 127.88 5.65E-02 40.21 0.67 -49.93 7.0E+08 0.50 -59.41 6.69 123.10 6.00E-02 35.82 0.62 -54.37 8.0E+08 0.46 -63.81 6.11 119.04 6.27E-02 32.15 0.57 -58.10 9.0E+08 0.42 -67.63 5.61 115.57 6.47E-02 29.07 0.53 -61.25 1.0E+09 0.39 -70.98 5.17 112.55 6.63E-02 26.45 0.50 -63.96 1.1E+09 0.36 -73.95 4.79 109.91 6.75E-02 24.19 0.47 -66.31 1.2E+09 0.34 -76.62 4.45 107.57 6.85E-02 22.24 0.45 -68.37 1.3E+09 0.32 -79.04 4.15 105.47 6.93E-02 20.53 0.43 -70.19 1.4E+09 0.30 -81.25 3.89 103.57 7.00E-02 19.02 0.41 -71.83 1.5E+09 0.28 -83.28 3.66 101.84 7.05E-02 17.69 0.40 -73.31 1.6E+09 0.27 -85.17 3.45 100.26 7.10E-02 16.49 0.39 -74.66 1.7E+09 0.25 -86.92 3.27 98.79 7.13E-02 15.41 0.38 -75.90 1.8E+09 0.24 -88.57 3.10 97.43 7.17E-02 14.43 0.37 -77.05 1.9E+09 0.23 -90.12 2.94 96.15 7.19E-02 13.54 0.36 -78.12 2.0E+09 0.22 -91.59 2.80 94.95 7.21E-02 12.73 0.35 -79.13 2.1E+09 0.21 -92.98 2.68 93.81 7.23E-02 11.98 0.35 -80.09 2.2E+09 0.20 -94.30 2.56 92.73 7.25E-02 11.29 0.34 -80.99 2.3E+09 0.20 -95.57 2.45 91.70 7.27E-02 10.64 0.34 -81.85 2.4E+09 0.19 -96.78 2.35 90.72 7.28E-02 10.05 0.33 -82.68 2.5E+09 0.18 -97.93 2.26 89.78 7.29E-02 9.49 0.33 -83.47 2.6E+09 0.18 -99.05 2.18 88.87 7.30E-02 8.96 0.33 -84.23 2.7E+09 0.17 -100.12 2.10 88.00 7.31E-02 8.47 0.33 -84.97 2.8E+09 0.17 -101.15 2.02 87.15 7.31E-02 8.01 0.33 -85.68 2.9E+09 0.16 -102.15 1.96 86.33 7.32E-02 7.57 0.33 -86.37 3.0E+09 0.16 -103.11 1.89 85.54 7.32E-02 7.16 0.33 -87.05 3-450 HFA3046, HFA3096, HFA3127, HFA3128 Common Emitter S-Parameters of NPN 3 µm x 50 µm Transistor FREQ. (Hz) |S11| (Continued) PHASE(S11) |S21| PHASE(S21) |S12| PHASE(S12) |S22| PHASE(S22) VCE = 5V and IC = 10mA 1.0E+08 0.72 -16.43 15.12 165.22 1.27E-02 75.41 0.95 -14.26 2.0E+08 0.67 -31.26 13.90 152.04 2.34E-02 62.89 0.88 -26.95 3.0E+08 0.60 -43.76 12.39 141.18 3.13E-02 52.58 0.79 -37.31 4.0E+08 0.53 -54.00 10.92 132.57 3.68E-02 44.50 0.70 -45.45 5.0E+08 0.47 -62.38 9.62 125.78 4.05E-02 38.23 0.63 -51.77 6.0E+08 0.42 -69.35 8.53 120.37 4.31E-02 33.34 0.57 -56.72 7.0E+08 0.37 -75.26 7.62 116.00 4.49E-02 29.47 0.51 -60.65 8.0E+08 0.34 -80.36 6.86 112.39 4.63E-02 26.37 0.47 -63.85 9.0E+08 0.31 -84.84 6.22 109.36 4.72E-02 23.84 0.44 -66.49 1.0E+09 0.29 -88.83 5.69 106.77 4.80E-02 21.75 0.41 -68.71 1.1E+09 0.27 -92.44 5.23 104.51 4.86E-02 20.00 0.39 -70.62 1.2E+09 0.25 -95.73 4.83 102.53 4.90E-02 18.52 0.37 -72.28 1.3E+09 0.24 -98.75 4.49 100.75 4.94E-02 17.25 0.35 -73.76 1.4E+09 0.22 -101.55 4.19 99.16 4.97E-02 16.15 0.34 -75.08 1.5E+09 0.21 -104.15 3.93 97.70 4.99E-02 15.19 0.33 -76.28 1.6E+09 0.20 -106.57 3.70 96.36 5.01E-02 14.34 0.32 -77.38 1.7E+09 0.20 -108.85 3.49 95.12 5.03E-02 13.60 0.31 -78.41 1.8E+09 0.19 -110.98 3.30 93.96 5.05E-02 12.94 0.31 -79.37 1.9E+09 0.18 -113.00 3.13 92.87 5.06E-02 12.34 0.30 -80.27 2.0E+09 0.18 -114.90 2.98 91.85 5.07E-02 11.81 0.30 -81.13 2.1E+09 0.17 -116.69 2.84 90.87 5.08E-02 11.33 0.30 -81.95 2.2E+09 0.17 -118.39 2.72 89.94 5.09E-02 10.89 0.29 -82.74 2.3E+09 0.16 -120.01 2.60 89.06 5.10E-02 10.50 0.29 -83.50 2.4E+09 0.16 -121.54 2.49 88.21 5.11E-02 10.13 0.29 -84.24 2.5E+09 0.16 -122.99 2.39 87.39 5.12E-02 9.80 0.29 -84.95 2.6E+09 0.15 -124.37 2.30 86.60 5.12E-02 9.49 0.29 -85.64 2.7E+09 0.15 -125.69 2.22 85.83 5.13E-02 9.21 0.29 -86.32 2.8E+09 0.15 -126.94 2.14 85.09 5.13E-02 8.95 0.29 -86.98 2.9E+09 0.15 -128.14 2.06 84.36 5.14E-02 8.71 0.29 -87.62 3.0E+09 0.14 -129.27 1.99 83.66 5.15E-02 8.49 0.29 -88.25 Common Emitter S-Parameters of PNP 3 µm x 50 µm Transistor FREQ. (Hz) |S11| PHASE(S11) |S21| PHASE(S21) |S12| PHASE(S12) |S22| PHASE(S22) VCE = -5V and IC = -5mA 1.0E+08 0.72 -16.65 10.11 166.77 1.66E-02 77.18 0.96 -10.76 2.0E+08 0.68 -32.12 9.44 154.69 3.10E-02 65.94 0.90 -20.38 3.0E+08 0.62 -45.73 8.57 144.40 4.23E-02 56.39 0.82 -28.25 4.0E+08 0.57 -57.39 7.68 135.95 5.05E-02 48.66 0.74 -34.31 5.0E+08 0.52 -67.32 6.86 129.11 5.64E-02 42.52 0.67 -38.81 3-451 HFA3046, HFA3096, HFA3127, HFA3128 Common Emitter S-Parameters of PNP 3 µm x 50 µm Transistor (Continued) FREQ. (Hz) |S11| PHASE(S11) |S21| PHASE(S21) |S12| PHASE(S12) |S22| PHASE(S22) 6.0E+08 0.47 -75.83 6.14 123.55 6.07E-02 37.66 0.61 -42.10 7.0E+08 0.43 -83.18 5.53 118.98 6.37E-02 33.79 0.55 -44.47 8.0E+08 0.40 -89.60 5.01 115.17 6.60E-02 30.67 0.51 -46.15 9.0E+08 0.38 -95.26 4.56 111.94 6.77E-02 28.14 0.47 -47.33 1.0E+09 0.36 -100.29 4.18 109.17 6.91E-02 26.06 0.44 -48.15 1.1E+09 0.34 -104.80 3.86 106.76 7.01E-02 24.33 0.41 -48.69 1.2E+09 0.33 -108.86 3.58 104.63 7.09E-02 22.89 0.39 -49.05 1.3E+09 0.32 -112.53 3.33 102.72 7.16E-02 21.67 0.37 -49.26 1.4E+09 0.30 -115.86 3.12 101.01 7.22E-02 20.64 0.36 -49.38 1.5E+09 0.30 -118.90 2.92 99.44 7.27E-02 19.76 0.34 -49.43 1.6E+09 0.29 -121.69 2.75 98.01 7.32E-02 19.00 0.33 -49.44 1.7E+09 0.28 -124.24 2.60 96.68 7.35E-02 18.35 0.32 -49.43 1.8E+09 0.28 -126.59 2.47 95.44 7.39E-02 17.79 0.31 -49.40 1.9E+09 0.27 -128.76 2.34 94.29 7.42E-02 17.30 0.30 -49.38 2.0E+09 0.27 -130.77 2.23 93.19 7.45E-02 16.88 0.30 -49.36 2.1E+09 0.26 -132.63 2.13 92.16 7.47E-02 16.52 0.29 -49.35 2.2E+09 0.26 -134.35 2.04 91.18 7.50E-02 16.20 0.28 -49.35 2.3E+09 0.26 -135.96 1.95 90.24 7.52E-02 15.92 0.28 -49.38 2.4E+09 0.25 -137.46 1.87 89.34 7.55E-02 15.68 0.28 -49.42 2.5E+09 0.25 -138.86 1.80 88.48 7.57E-02 15.48 0.27 -49.49 2.6E+09 0.25 -140.17 1.73 87.65 7.59E-02 15.30 0.27 -49.56 2.7E+09 0.25 -141.39 1.67 86.85 7.61E-02 15.15 0.26 -49.67 2.8E+09 0.25 -142.54 1.61 86.07 7.63E-02 15.01 0.26 -49.81 2.9E+09 0.24 -143.62 1.56 85.31 7.65E-02 14.90 0.26 -49.96 3.0E+09 0.24 -144.64 1.51 84.58 7.67E-02 14.81 0.26 -50.13 VCE = -5V, IC = -10mA 1.0E+08 0.58 -23.24 13.03 163.45 1.43E-02 73.38 0.93 -13.46 2.0E+08 0.53 -44.07 11.75 149.11 2.58E-02 60.43 0.85 -24.76 3.0E+08 0.48 -61.50 10.25 137.78 3.38E-02 50.16 0.74 -33.10 4.0E+08 0.43 -75.73 8.88 129.12 3.90E-02 42.49 0.65 -38.83 5.0E+08 0.40 -87.36 7.72 122.49 4.25E-02 36.81 0.58 -42.63 6.0E+08 0.37 -96.94 6.78 117.33 4.48E-02 32.59 0.51 -45.07 7.0E+08 0.35 -104.92 6.01 113.22 4.64E-02 29.39 0.47 -46.60 8.0E+08 0.33 -111.64 5.39 109.85 4.76E-02 26.94 0.43 -47.49 9.0E+08 0.32 -117.36 4.87 107.05 4.85E-02 25.04 0.40 -47.97 1.0E+09 0.31 -122.27 4.44 104.66 4.92E-02 23.55 0.37 -48.18 1.1E+09 0.30 -126.51 4.07 102.59 4.97E-02 22.37 0.35 -48.20 1.2E+09 0.30 -130.21 3.76 100.76 5.02E-02 21.44 0.33 -48.11 3-452 HFA3046, HFA3096, HFA3127, HFA3128 Common Emitter S-Parameters of PNP 3 µm x 50 µm Transistor (Continued) FREQ. (Hz) |S11| PHASE(S11) |S21| PHASE(S21) |S12| PHASE(S12) |S22| PHASE(S22) 1.3E+09 0.29 -133.46 3.49 99.14 5.06E-02 20.70 0.32 -47.95 1.4E+09 0.29 -136.33 3.25 97.67 5.09E-02 20.11 0.31 -47.77 1.5E+09 0.28 -138.89 3.05 96.33 5.12E-02 19.65 0.30 -47.58 1.6E+09 0.28 -141.17 2.87 95.10 5.15E-02 19.29 0.29 -47.39 1.7E+09 0.28 -143.21 2.70 93.96 5.18E-02 19.01 0.28 -47.23 1.8E+09 0.28 -145.06 2.56 92.90 5.21E-02 18.80 0.27 -47.09 1.9E+09 0.27 -146.73 2.43 91.90 5.23E-02 18.65 0.27 -46.98 2.0E+09 0.27 -148.26 2.31 90.95 5.26E-02 18.55 0.26 -46.91 2.1E+09 0.27 -149.65 2.20 90.05 5.28E-02 18.49 0.26 -46.87 2.2E+09 0.27 -150.92 2.10 89.20 5.30E-02 18.46 0.25 -46.87 2.3E+09 0.27 -152.10 2.01 88.37 5.33E-02 18.47 0.25 -46.90 2.4E+09 0.27 -153.18 1.93 87.59 5.35E-02 18.50 0.25 -46.97 2.5E+09 0.27 -154.17 1.86 86.82 5.38E-02 18.55 0.24 -47.07 2.6E+09 0.26 -155.10 1.79 86.09 5.40E-02 18.62 0.24 -47.18 2.7E+09 0.26 -155.96 1.72 85.38 5.42E-02 18.71 0.24 -47.34 2.8E+09 0.26 -156.76 1.66 84.68 5.45E-02 18.80 0.24 -47.55 2.9E+09 0.26 -157.51 1.60 84.01 5.47E-02 18.91 0.24 -47.76 3.0E+09 0.26 -158.21 1.55 83.35 5.50E-02 19.03 0.23 -48.00 25 IB = 200µA 20 IB = 160µA 100m 10m COLLECTOR CURRENT AND BASE CURRENT (A) COLLECTOR CURRENT (mA) Typical Performance Curves IB =120µA 15 IB = 80µA 10 IB = 40µA 5 1m VCE = 3V IC IB 100µ 10µ 1µ 100n 10n 0 1 2 3 4 COLLECTOR TO EMITTER VOLTAGE (V) 5 FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO EMITTER VOLTAGE 3-453 1n 0.5 0.6 0.7 0.8 0.9 BASE TO EMITTER VOLTAGE (V) FIGURE 2. NPN COLLECTOR CURRENT AND BASE CURRENT vs BASE TO EMITTER VOLTAGE 1.0 HFA3046, HFA3096, HFA3127, HFA3128 Typical Performance Curves (Continued) 10.0 GAIN BANDWIDTH PRODUCT (GHz) VCE = 3V 160 DC CURRENT GAIN 140 120 100 80 60 40 20 0 1µ 10µ 100µ 1m 10m 8.0 VCE = 5V 6.0 VCE = 1V 4.0 2.0 0 0.1 100m FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR CURRENT -100m 100 VCE = -3V IC -10m IB = -320µA COLLECTOR CURRENT AND BASE CURRENT (A) COLLECTOR CURRENT (mA) 10 FIGURE 4. NPN GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT (UHF 3 x 50 WITH BOND PADS) IB = -400µA -20 1.0 COLLECTOR CURRENT (mA) COLLECTOR CURRENT (A) -25 VCE = 3V IB = -240µA -15 IB = -160µA -10 IB = -80µA -5 IB -1m -100µ -10µ -1µ -100n -10n 0 0 -1 -2 -3 -4 -1n -0.5 -5 COLLECTOR TO EMITTER VOLTAGE (V) -0.6 -0.7 -0.8 -0.9 -1.0 BASE TO EMITTER VOLTAGE (V) FIGURE 5. PNP COLLECTOR CURRENT vs COLLECTOR TO EMITTER VOLTAGE FIGURE 6. PNP COLLECTOR CURRENT AND BASE CURRENT vs BASE TO EMITTER VOLTAGE 5.0 GAIN BANDWIDTH PRODUCT (GHz) VCE = -3V 160 DC CURRENT GAIN 140 120 100 80 60 40 20 0 -1µ -10µ -100µ -1m -10m -100m VCE = -5V 4.0 VCE = -3V 3.0 VCE = -1V 2.0 1.0 -0.1 FIGURE 7. PNP DC CURRENT GAIN vs COLLECTOR CURRENT -10 -100 FIGURE 8. PNP GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT (UHF 3 x 50 WITH BOND PADS) Die Characteristics 3-454 -1.0 COLLECTOR CURRENT (mA) COLLECTOR CURRENT (A) HFA3046, HFA3096, HFA3127, HFA3128 DIE DIMENSIONS: PASSIVATION: 53 mils x 52 mils x 19 mils 1340µm x 1320µm x 483µm Type: Nitride Thickness: 4kÅ ±0.5kÅ PROCESS: METALLIZATION: UHF-1 Type: Metal 1: AlCu(2%)/TiW Thickness: Metal 1: 8kÅ ±0.4kÅ Type: Metal 2: AlCu(2%) Thickness: Metal 2: 16kÅ 0.8kÅ SUBSTRATE POTENTIAL: (POWERED UP) Unbiased Metallization Mask Layout HFA3096, HFA3127, HFA3128 2 1340µm (53mils) 1 16 15 3 14 4 13 5 12 6 11 7 8 9 10 1320µm (52mils) HFA3046 2 1 14 13 3 1340µm (53mils) 12 4 5 11 6 10 7 8 9 1320µm (52mils) Pad numbers correspond to SOIC pinout. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. 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