RoHS BAS40W-04/05/06 BAS40W SERIES ＳＯＴ－３２３ SCHOTTKY DIODE 1.BASE 2.EMITTER FEATURES １．２５±０．０５ １．０１ ＲＥＦ 3.COLLECTOR D T ,. L O Power dissipation PD : 200 mW（Tamb=25℃） Collector current R T C E L BAS40W Marking:43.K43 BAS40W-04 Marking:44.K44 ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter ２．００±０．０５ IC Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ C １．３０±０．０３ IF: 200 mA Collector-base voltage VR : 40V ０．３０ ２．３０±０．０５ Unit : mm N O BAS40W-05 Marking:45.K45 unless otherwise specified） Symbol Test V(BR) R IR= 10µA Reverse voltage leakage current IR VR=30V 200 nA Forward voltage VF IF=1mA IF=40mA 380 1000 mV CD VR=0V 5 pF 5 nS E Reverse breakdown voltage J E Diode capacitance W Reveres recovery time WEJ ELECTRONIC CO. trr conditions BAS40W-06 Marking:46.K46 MIN MAX 40 f=1MHz IF=10mA through IR=10mA to IR=1mA Http:// www.wej.cn UNIT V E-mail:[email protected] RoHS BAS40W-04/05/06 R T J E O IC C D T ,. L O N C E L E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS BAS40W-04/05/06 SOT-323 PACKAGE OUTLINE DIMENSIONS D e1 D T ,. L θ O E E1 L e L1 IC 0.02 b N A1 c A A2 R T C E L O Dimensions In Millimeters Symbol A A1 J E A2 b c D W E C Dimensions In Inches Min Max Min Max 0.900 1.100 0.035 0.043 0.000 0.100 0.000 0.004 0.900 1.000 0.035 0.039 0.200 0.400 0.008 0.016 0.080 0.150 0.003 0.006 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 e e1 1.200 1.400 0.047 0.525REF L 0.096 0.026TYP 0.650TYP 0.055 0.021REF L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]