DMN2400UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage UItra-Small Surface Mount Package Ultra-Low Package Profile, 0.4mm Maximum Package Height ESD Protected up to 1.5kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Case: X2-DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (Approximate) D r a in X2-DFN1006-3 S D G a te G BOTTOM VIEW ESD PROTECTED TO 1.5kV TOP VIEW Package Pin Configuration G a te P ro te c tio n D io d e S o u rce E Q U IV A L E N T C IR C U I T Ordering Information (Note 4) Part Number DMN2400UFB4-7 DMN2400UFB4-7B Notes: Marking NC NC Reel size (inches) 7 7 Tape width (mm) 8 8 Quantity per reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. DMN2400UFB4 Document number: DS32025 Rev. 6 - 2 1 of 7 www.diodes.com May 2015 © Diodes Incorporated DMN2400UFB4 Marking Information From date code 1527 (YYWW), this changes to: NC NC Top View Bar Denotes Gate and Source Side Top View Dot Denotes Drain Side NC NC NC NC NC NC DMN2400UFB4-7 NC Top View Bar Denotes Gate and Source Side NC = Part Marking Code NC NC NC DMN2400UFB4-7B Maximum Ratings @TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 4.5V Steady State TA = +25°C TA = +85°C Pulsed Drain Current (Notes 5 & 6) Thermal Characteristics Value 20 ±12 Units V V ID 0.75 0.55 A IDM 3 A @TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: Symbol VDSS VGSS Symbol PD RθJA TJ, TSTG Value 0.47 258 -55 to +150 Units mW °C/W °C 5. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided. 6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%. DMN2400UFB4 Document number: DS32025 Rev. 6 - 2 2 of 7 www.diodes.com May 2015 © Diodes Incorporated DMN2400UFB4 Electrical Characteristics @TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit BVDSS 20 — — V Zero Gate Voltage Drain Current TJ = +25°C IDSS — — Gate-Source Leakage Gate-Source Leakage Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage IGSS IGSS IGSS — — — — — — 100 50 ±100 ±1.0 ±50 VGS(th) Static Drain-Source On-Resistance RDS (ON) 0.5 — — — — — — — — 1.0 0.7 0.9 0.55 0.75 0.9 — 1.2 — — — — — — — — — — 36.0 5.7 4.2 0.5 0.07 0.1 4.11 3.82 14.8 9.6 — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: |Yfs| VSD Ciss Coss Crss Qg Qgs Qgd tD(on) tr tD(off) tf nA nA μA μA V Ω S V pF pF pF nC nC nC ns ns ns ns Test Condition VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VDS = 5V, VGS = 0V VGS = ±3V, VDS = 0V VGS = ±4.5V, VDS = 0V VGS = ±10V, VDS = 0V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 600mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS = 10V, ID = 400mA VGS = 0V, IS = 150mA VDS =16V, VGS = 0V, f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2.0 1.5 VGS = 4.5V VDS = 5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 2.5V 1.5 VGS = 2.0V VGS = 1.8V 1.0 0.5 VGS = 1.5V 1.0 0.5 TA = 150°C TA = 125°C TA = 85°C TA = 25°C TA = -55°C 0 VGS = 1.2V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMN2400UFB4 Document number: DS32025 Rev. 6 - 2 5 0 0 0.5 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE (V) 3 Fig. 2 Typical Transfer Characteristics 3 of 7 www.diodes.com May 2015 © Diodes Incorporated 0.8 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () DMN2400UFB4 0.6 VGS = 1.8V 0.4 VGS = 2.5V VGS = 4.5V 0.2 0 0 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.6 VGS = 4.5V ID = 1.0A 1.4 VGS = 2.5.V ID = 500mA 1.2 1.0 0.8 0.6 -50 0.6 TA = 150°C TA = 125°C 0.4 TA = 85°C TA = 25°C 0.2 0 TA = -55°C 0 0.25 0.50 0.75 1.00 1.25 1.50 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.8 0.6 VGS = 2.5V ID = 500mA 0.4 VGS = 4.5V ID = 1.0A 0.2 0 -50 2.0 1.2 1.0 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) VGS = 4.5V -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature ID = 1mA 0.8 ID = 250µA 0.6 0.4 1.6 TA = 25°C 1.2 0.8 0.4 0.2 0 -50 0.8 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMN2400UFB4 Document number: DS32025 Rev. 6 - 2 4 of 7 www.diodes.com 0 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 May 2015 © Diodes Incorporated DMN2400UFB4 f = 1MHz C, CAPACITANCE (pF) 50 40 Ciss 30 20 10 Coss C rss 0 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 20 100,000 IGSS, GATE-SOURCE LEAKAGE CURRENT (nA) IGSS, GATE-SOURCE LEAKAGE CURRENT (nA) IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 60 10,000 TA = 150°C TA = 125°C 1,000 TA = 85°C 100 TA = 25°C TA = -55°C 10 1 2 1,000 TA = 150°C 100 TA = 125°C TA = 85°C 10 TA = 25°C TA = -55°C 1 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage 100,000 10,000 4 6 8 10 12 VGS, GATE-SOURCE VOLTAGE (V) Fig. 11 Typical Gate-Source Leakage Current vs. Gate-Source Voltage T A = 150°C T A = 125°C 1,000 TA = 85°C 100 TA = 25°C TA = -55°C 10 1 2 4 6 8 10 12 VGS, GATE-SOURCE VOLTAGE (V) Fig. 12 Typical Gate-Source Leakage Current vs. Gate-Source Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA (t) = r(t) * R JA RJA = 253°C/W D = 0.02 0.01 D = 0.01 P(pk) t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 DMN2400UFB4 Document number: DS32025 Rev. 6 - 2 0.0001 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 13 Transient Thermal Response 5 of 7 www.diodes.com 10 100 1,000 May 2015 © Diodes Incorporated DMN2400UFB4 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A A1 D b1 E e b2 L2 L3 X2-DFN1006-3 Dim Min Max Typ A 0.40 A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.05 1.00 E 0.55 0.65 0.60 e 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 All Dimensions in mm L1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C Dimensions Z G1 G2 X X1 Y C X1 X G2 G1 Y Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Z DMN2400UFB4 Document number: DS32025 Rev. 6 - 2 6 of 7 www.diodes.com May 2015 © Diodes Incorporated DMN2400UFB4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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