SPICE MODEL: DMN2004WK DMN2004WK Lead-free Green N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features · · · · · · · · · Low On-Resistance: RDS(ON) A Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Dim Min Max A 0.25 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal E 0.30 G 1.20 1.40 H 1.80 2.20 B C Low Input/Output Leakage S G Lead Free By Design/RoHS Compliant (Note 2) G ESD Protected up to 2KV H "Green" Device (Note 4) Qualified to AEC-Q101 standards for High Reliability K Mechanical Data J · · Case: SOT-323 · · Moisture sensitivity: Level 1 per J-STD-020C · · · · SOT-323 D D E 0.40 J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.18 a 0° 8° All Dimensions in mm Gate Terminal Connections: See Diagram ESD protected up to 2KV Marking: See Last Page Ordering & Date Code Information: See Last Page Weight: 0.006 grams (approximate) Maximum Ratings L Drain Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Terminals: Finish ¾ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 M Gate Protection Diode Source EQUIVALENT CIRCUIT @ TA = 25°C unless otherwise specified Symbol Value Units Drain-Source Voltage Characteristic VDSS 20 V Gate-Source Voltage VGSS ±8 V ID 540 390 mA IDM 1.5 A Pd Drain Current (Note 1) Steady State TA = 25°C TA = 85°C Pulsed Drain Current (Note 3) Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. 2. 3. 4. 200 mW RqJA 625 °C/W Tj, TSTG -65 to +150 °C Device mounted on FR-4 PCB. No purposefully added lead. Pulse width £10mS, Duty Cycle £1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30934 Rev. 2 - 2 1 of 4 www.diodes.com DMN2004WK ã Diodes Incorporated @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition BVDSS 20 ¾ ¾ V VGS = 0V, ID = 10mA Zero Gate Voltage Drain Current IDSS ¾ ¾ 1 mA VDS = 16V, VGS = 0V Gate-Source Leakage IGSS ¾ ¾ ±1 mA VGS = ±4.5V, VDS = 0V VGS(th) 0.5 ¾ 1.0 V VDS = VGS, ID = 250mA RDS (ON) ¾ 0.4 0.5 0.7 0.55 0.70 0.9 W VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA Forward Transfer Admittance |Yfs| 200 ¾ ¾ ms Diode Forward Voltage (Note 5) VSD 0.5 ¾ 1.4 V Input Capacitance Ciss ¾ ¾ 150 pF Output Capacitance Coss ¾ ¾ 25 pF Reverse Transfer Capacitance Crss ¾ ¾ 20 pF OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS Notes: VDS = 16V, VGS = 0V f = 1.0MHz 5. Short duration test pulse used to minimize self-heating effect. 0.9 1000 VGS = 2.2V VDS = 10V Pulsed 900 VGS = 2.0V VGS = 1.8V 0.6 ID, DRAIN CURRENT (mA) ID, DRAIN CURRENT (A) 800 VGS = 1.6V VGS = 1.4V 0.3 700 600 500 400 TA = 150° C 300 200 TA = 85° C TA = -55° C 0 0.4 0 0 1 2 TA = 25° C 100 VGS = 1.2V 5 4 3 1 0.8 1.2 1.6 2 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS(th), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT Electrical Characteristics 1 0.9 VDS = 10V 0.8 Pulsed VGS = 10V Pulsed ID = 1mA 0.7 TA = 125° C 0.6 TA = 150° C TA = 85° C 0.5 0.4 0.3 0.2 TA = -55° C 0.1 0 -75 TA = 25° C TA = 0° C TA = -25° C 0.1 -50 -25 0 25 50 75 100 125 150 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature DS30934 Rev. 2 - 2 0.2 0.4 0.6 0.8 1.0 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current 2 of 4 www.diodes.com DMN2004WK 1 1.0 TA = 25°C NEW PRODUCT VGS = 5V Pulsed 0.9 0.8 TA = 125° C TA = 150° C TA = 85° C 0.7 0.6 ID = 540mA 0.5 0.4 0.3 TA = -55° C TA = 25° C TA = 0° C 0.2 TA = -25° C 0.1 0 0.1 0.2 0.6 0.4 0.8 2 0 1.0 6 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source, On-Resistance vs. Gate-Source Voltage ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current 1 0.5 Tj = 25°C 0.9 0.8 0.4 VGS = 1.8V VGS = 4.5V, ID = 540mA 0.7 0.3 0.6 0.5 VGS = 10V, ID = 280mA 0.2 VGS = 2.5V 0.4 0.1 VGS = 4.5V 0.3 0.2 0.4 0.2 0 0.8 0.6 1 0 -50 1.2 -25 0 25 50 75 100 125 150 Tj, JUNCTION TEMPERATURE (° C) Fig. 8 Static Drain-Source, On-Resistance vs. Temperature ID, DRAIN CURRENT (A) Fig. 7 On-Resistance vs. Drain Current and Gate Voltage 10000 1 1000 IDR, REVERSE DRAIN CURRENT (A) IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) VGS = 0V Tj = 150°C 100 Tj = 100°C 10 1 TA = 150° C 0.1 TA = 125° C TA = 85° C TA = 25° C 0.01 TA = 0° C TA = -25° C TA = -55° C 0.1 0.001 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Drain Source Leakage Current vs. Voltage DS30934 Rev. 2 - 2 3 of 4 www.diodes.com 0 1 0.5 VSD, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Reverse Drain Current vs. Source-Drain Voltage DMN2004WK 120 TA = -55° C VGS = 10V f = 1MHz VGS = 0V 100 Ciss TA = 25° C C, CAPACITANCE (pF) |Yfs|, FORWARD TRANSFER ADMITTANCE (S) TA = 85° C 0.1 TA = 150° C 80 60 40 Coss 20 0.01 Crss 1 10 0 1000 100 0 ID, DRAIN CURRENT (mA) Fig. 11 Forward Transfer Admittance vs. Drain Current Ordering Information Notes: 4 2 8 6 10 12 14 16 18 20 VDS, DRAIN SOURCE VOLTAGE (V) Fig. 12 Capacitance Variation (Note 6) Device Packaging Shipping DMN2004WK-7 SOT-323 3000/Tape & Reel 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information NAB YM NEW PRODUCT 1 NAB = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Date Code Key Year 2006 2007 2008 2009 Code T U V W Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30934 Rev. 2 - 2 4 of 4 www.diodes.com DMN2004WK