Diodes DMN2004WK-7 N-channel enhancement mode field effect transistor Datasheet

SPICE MODEL: DMN2004WK
DMN2004WK
Lead-free Green
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
NEW PRODUCT
Features
·
·
·
·
·
·
·
·
·
Low On-Resistance: RDS(ON)
A
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Dim
Min
Max
A
0.25
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
G
1.20
1.40
H
1.80
2.20
B C
Low Input/Output Leakage
S
G
Lead Free By Design/RoHS Compliant (Note 2)
G
ESD Protected up to 2KV
H
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
K
Mechanical Data
J
·
·
Case: SOT-323
·
·
Moisture sensitivity: Level 1 per J-STD-020C
·
·
·
·
SOT-323
D
D
E
0.40
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.18
a
0°
8°
All Dimensions in mm
Gate
Terminal Connections: See Diagram
ESD protected up to 2KV
Marking: See Last Page
Ordering & Date Code Information: See Last Page
Weight: 0.006 grams (approximate)
Maximum Ratings
L
Drain
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Terminals: Finish ¾ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
M
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
@ TA = 25°C unless otherwise specified
Symbol
Value
Units
Drain-Source Voltage
Characteristic
VDSS
20
V
Gate-Source Voltage
VGSS
±8
V
ID
540
390
mA
IDM
1.5
A
Pd
Drain Current (Note 1)
Steady
State
TA = 25°C
TA = 85°C
Pulsed Drain Current (Note 3)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Note:
1.
2.
3.
4.
200
mW
RqJA
625
°C/W
Tj, TSTG
-65 to +150
°C
Device mounted on FR-4 PCB.
No purposefully added lead.
Pulse width £10mS, Duty Cycle £1%.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30934 Rev. 2 - 2
1 of 4
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DMN2004WK
ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
20
¾
¾
V
VGS = 0V, ID = 10mA
Zero Gate Voltage Drain Current
IDSS
¾
¾
1
mA
VDS = 16V, VGS = 0V
Gate-Source Leakage
IGSS
¾
¾
±1
mA
VGS = ±4.5V, VDS = 0V
VGS(th)
0.5
¾
1.0
V
VDS = VGS, ID = 250mA
RDS (ON)
¾
0.4
0.5
0.7
0.55
0.70
0.9
W
VGS = 4.5V, ID = 540mA
VGS = 2.5V, ID = 500mA
VGS = 1.8V, ID = 350mA
Forward Transfer Admittance
|Yfs|
200
¾
¾
ms
Diode Forward Voltage (Note 5)
VSD
0.5
¾
1.4
V
Input Capacitance
Ciss
¾
¾
150
pF
Output Capacitance
Coss
¾
¾
25
pF
Reverse Transfer Capacitance
Crss
¾
¾
20
pF
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS
Notes:
VDS = 16V, VGS = 0V
f = 1.0MHz
5. Short duration test pulse used to minimize self-heating effect.
0.9
1000
VGS = 2.2V
VDS = 10V
Pulsed
900
VGS = 2.0V
VGS = 1.8V
0.6
ID, DRAIN CURRENT (mA)
ID, DRAIN CURRENT (A)
800
VGS = 1.6V
VGS = 1.4V
0.3
700
600
500
400
TA = 150° C
300
200
TA = 85° C
TA = -55° C
0
0.4
0
0
1
2
TA = 25° C
100
VGS = 1.2V
5
4
3
1
0.8
1.2
1.6
2
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Reverse Drain Current
vs. Source-Drain Voltage
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
VGS(th), GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
Electrical Characteristics
1
0.9
VDS = 10V
0.8
Pulsed
VGS = 10V
Pulsed
ID = 1mA
0.7
TA = 125° C
0.6
TA = 150° C
TA = 85° C
0.5
0.4
0.3
0.2
TA = -55° C
0.1
0
-75
TA = 25° C
TA = 0° C
TA = -25° C
0.1
-50
-25
0
25
50
75
100
125 150
Tch, CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
DS30934 Rev. 2 - 2
0.2
0.4
0.6
0.8
1.0
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
Vs. Drain Current
2 of 4
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DMN2004WK
1
1.0
TA = 25°C
NEW PRODUCT
VGS = 5V
Pulsed
0.9
0.8
TA = 125° C
TA = 150° C
TA = 85° C
0.7
0.6
ID = 540mA
0.5
0.4
0.3
TA = -55° C
TA = 25° C
TA = 0° C
0.2
TA = -25° C
0.1
0
0.1
0.2
0.6
0.4
0.8
2
0
1.0
6
4
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source, On-Resistance
vs. Gate-Source Voltage
ID, DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
1
0.5
Tj = 25°C
0.9
0.8
0.4
VGS = 1.8V
VGS = 4.5V,
ID = 540mA
0.7
0.3
0.6
0.5
VGS = 10V,
ID = 280mA
0.2
VGS = 2.5V
0.4
0.1
VGS = 4.5V
0.3
0.2
0.4
0.2
0
0.8
0.6
1
0
-50
1.2
-25
0
25
50
75
100
125 150
Tj, JUNCTION TEMPERATURE (° C)
Fig. 8 Static Drain-Source, On-Resistance
vs. Temperature
ID, DRAIN CURRENT (A)
Fig. 7 On-Resistance vs. Drain
Current and Gate Voltage
10000
1
1000
IDR, REVERSE DRAIN CURRENT (A)
IDSS, DRAIN-SOURCE LEAKAGE
CURRENT (nA)
VGS = 0V
Tj = 150°C
100
Tj = 100°C
10
1
TA = 150° C
0.1
TA = 125° C
TA = 85° C
TA = 25° C
0.01
TA = 0° C
TA = -25° C
TA = -55° C
0.1
0.001
2
4
6
8
10 12
14
16
18
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Drain Source Leakage Current
vs. Voltage
DS30934 Rev. 2 - 2
3 of 4
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0
1
0.5
VSD, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Reverse Drain Current
vs. Source-Drain Voltage
DMN2004WK
120
TA = -55° C
VGS = 10V
f = 1MHz
VGS = 0V
100
Ciss
TA = 25° C
C, CAPACITANCE (pF)
|Yfs|, FORWARD TRANSFER ADMITTANCE (S)
TA = 85° C
0.1
TA = 150° C
80
60
40
Coss
20
0.01
Crss
1
10
0
1000
100
0
ID, DRAIN CURRENT (mA)
Fig. 11 Forward Transfer Admittance
vs. Drain Current
Ordering Information
Notes:
4
2
8
6
10 12 14 16
18 20
VDS, DRAIN SOURCE VOLTAGE (V)
Fig. 12 Capacitance Variation
(Note 6)
Device
Packaging
Shipping
DMN2004WK-7
SOT-323
3000/Tape & Reel
6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
NAB
YM
NEW PRODUCT
1
NAB = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Year
2006
2007
2008
2009
Code
T
U
V
W
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
President of Diodes Incorporated.
DS30934 Rev. 2 - 2
4 of 4
www.diodes.com
DMN2004WK
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