AP40T03GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching 30V RDS(ON) 25mΩ ID G ▼ RoHS Compliant BVDSS 28A S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. GD The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP40T03GJ) are available for low-profile applications. G D S S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±25 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V 28 A ID@TA=100℃ Continuous Drain Current, VGS @ 10V 24 A 95 A 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 31.25 W Linear Derating Factor 0.25 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Thermal Resistance Junction-case Max. 4 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Data and specifications subject to change without notice 200331052-1/4 AP40T03GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Units 30 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.032 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=18A - - 25 mΩ VGS=4.5V, ID=14A - - 45 mΩ VDS=VGS, ID=250uA 1 - 3 V VDS=10V, ID=18A - 15 - S VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (T j=150 C) VDS=24V ,VGS=0V - - 25 uA Gate-Source Leakage VGS= ±25V - - ±100 nA ID=18A - 8.8 - nC VGS(th) Gate Threshold Voltage gfs Forward Transconductance VGS=0V, ID=250uA Min. o IDSS Drain-Source Leakage Current (T j=25 C) o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=20V - 2.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 5.8 - nC VDS=15V - 6 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=18A - 62 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 16 - ns tf Fall Time RD=0.83Ω - 4.4 - ns Ciss Input Capacitance VGS=0V - 655 - pF Coss Output Capacitance VDS=25V - 145 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 95 - pF Min. Typ. - - 28 A - - 95 A - - 1.3 V Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions VD=VG=0V , VS=1.3V Continuous Source Current ( Body Diode ) Pulsed Source Current ( Body Diode ) 2 Forward On Voltage 1 Tj=25℃, IS=28A, VGS=0V Max. Units Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2/4 AP40T03GH/J 90 75 10V 8 .0V ID , Drain Current (A) 6 .0V 60 30 50 6 .0V 25 V G =4.0V V G = 4. 0V 0 0 0.0 1.0 2.0 3.0 4.0 0.0 1.0 V DS , Drain-to-Source Voltage (V) 2.0 3.0 4.0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 70 I D =18A V G =10V Normalized RDS(ON) I D =14A T C =25 ℃ 50 RDS(ON) (mΩ) 10V 8 .0V o T C =150 C ID , Drain Current (A) o T C =25 C 30 1.4 0.8 0.2 10 0 5 10 -50 15 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 100 2.0 10 T j =25 o C IS(A) VGS(th) (V) T j =150 o C 1.5 1 1.0 0.1 0.5 0 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.6 -50 0 50 100 150 o T j , Junction Temperature ( C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP40T03GH/J f=1.0MHz 12 1000 9 C iss V DS =10V V DS =15V V DS =20V C (pF) VGS , Gate to Source Voltage (V) I D =18A 6 C oss C rss 100 3 10 0 0 3 6 9 1 12 8 15 22 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 Normalized Thermal Response (Rthjc) ID (A) Duty factor = 0.5 100us 10 1ms o T C =25 C Single Pulse 10ms 100ms DC 1 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Single Pulse Duty Factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 0.1 1 10 100 0.00001 0.0001 Fig 9. Maximum Safe Operating Area VDS 90% 0.001 0.01 0.1 1 t , Pulse Width (s) V DS ,Drain-to-Source Voltage (V) Fig 10. Effective Transient Thermal Impedance VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4/4