Microchip MCP635T-E/UN 24 mhz, 2.5 ma op amp Datasheet

MCP631/2/3/5
24 MHz, 2.5 mA Op Amps
Features
Description
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The Microchip Technology, Inc. MCP631/2/3/5 family of
operational amplifiers features high gain bandwidth
product (24 MHz, typical) and high output short circuit
current (70 mA, typical). Some also provide a Chip
Select pin (CS) that supports a low power mode of
operation. These amplifiers are optimized for high
speed, low noise and distortion, single-supply
operation with rail-to-rail output and an input that
includes the negative rail.
Gain Bandwidth Product: 24 MHz (typical)
Short Circuit Current: 70 mA (typical)
Noise: 10 nV/√Hz (typical, at 1 MHz)
Rail-to-Rail Output
Slew Rate: 10 V/µs (typical)
Supply Current: 2.5 mA (typical)
Power Supply: 2.5V to 5.5V
Extended Temperature Range: -40°C to +125°C
This family is offered in single (MCP631), single with
CS pin (MCP633), dual (MCP632) and dual with
two CS pins (MCP635). All devices are fully specified
from -40°C to +125°C.
Typical Applications
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Driving A/D Converters
Power Amplifier Control Loops
Barcode Scanners
Optical Detector Amplifier
Typical Application Circuit
Design Aids
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R1
VDD/2
R2
VOUT
RL
R3
SPICE Macro Models
FilterLab® Software
Mindi™ Circuit Designer & Simulator
Microchip Advanced Part Selector (MAPS)
Analog Demonstration and Evaluation Boards
Application Notes
VIN
MCP63X
Power Driver with High Gain
Package Types
MCP631
SOIC
NC 1
8 NC
MCP633
SOIC
MCP632
SOIC
VOUTA 1
8 VDD
VIN– 2
7 VDD
VINA– 2
7 VOUTB
VIN+ 3
6 VOUT
VINA+ 3
6 VINB–
5 VINB+
VSS
4
VSS 4
5 NC
MCP635
MSOP
8 CS
VOUTA 1
VIN– 2
7 VDD
VIN+ 3
6 VOUT
VINA– 2
VINA+ 3
NC 1
VSS 4
5 NC
VSS 4
CSA 5
MCP632
3x3 DFN *
VOUTA 1
8 VDD
VINA– 2
7 VOUTB
VINA+ 3
6 VINB–
VSS 4
5 VINB+
10 VDD
9 VOUTB
8 VINB–
7 VINB+
6 CSB
MCP635
3x3 DFN *
VOUTA
VINA–
VINA+
VSS
CSA
1
2
3
4
5
10 VDD
9
8
7
6
VOUTB
VINB–
VINB+
CSB
* Includes Exposed Thermal Pad (EP); see Table 3-1.
© 2009 Microchip Technology Inc.
DS22197A-page 1
MCP631/2/3/5
NOTES:
DS22197A-page 2
© 2009 Microchip Technology Inc.
MCP631/2/3/5
1.0
ELECTRICAL
CHARACTERISTICS
1.1
Absolute Maximum Ratings †
† Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
VDD – VSS .......................................................................6.5V
Current at Input Pins ....................................................±2 mA
Analog Inputs (VIN+ and VIN–) †† . VSS – 1.0V to VDD + 1.0V
All other Inputs and Outputs .......... VSS – 0.3V to VDD + 0.3V
Output Short Circuit Current ................................ Continuous
Current at Output and Supply Pins ..........................±150 mA
Storage Temperature ...................................-65°C to +150°C
Max. Junction Temperature ........................................ +150°C
ESD protection on all pins (HBM, MM) ................≥ 1 kV, 200V
1.2
†† See Section 4.1.2 “Input Voltage and Current Limits”.
Specifications
TABLE 1-1:
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/3,
VOUT ≈ VDD/2, VL = VDD/2, RL = 2 kΩ to VL and CS = VSS (refer to Figure 1-2).
Parameters
Sym
Min
Typ
Max
Units Conditions
Input Offset
Input Offset Voltage
Input Offset Voltage Drift
Power Supply Rejection Ratio
VOS
-8
±1.8
+8
ΔVOS/ΔTA
—
±2.0
—
PSRR
61
76
—
mV
µV/°C TA= -40°C to +125°C
dB
Input Current and Impedance
IB
—
4
—
pA
Across Temperature
IB
—
100
—
pA
TA= +85°C
Across Temperature
IB
—
1500
5,000
pA
TA= +125°C
IOS
—
±2
—
pA
13
Input Bias Current
Input Offset Current
Common Mode Input Impedance
ZCM
—
10 ||9
—
Ω||pF
Differential Input Impedance
ZDIFF
—
1013||2
—
Ω||pF
Common-Mode Input Voltage Range
VCMR
VSS − 0.3
—
VDD − 1.3
V
(Note 1)
Common-Mode Rejection Ratio
CMRR
63
78
—
dB
VDD = 2.5V, VCM = -0.3 to 1.2V
CMRR
66
81
—
dB
VDD = 5.5V, VCM = -0.3 to 4.2V
AOL
88
115
—
dB
VDD = 2.5V, VOUT = 0.3V to 2.2V
AOL
94
124
—
dB
VDD = 5.5V, VOUT = 0.3V to 5.2V
VOL, VOH
VSS + 20
—
VDD − 20
mV
VDD = 2.5V, G = +2,
0.5V Input Overdrive
VOL, VOH
VSS + 40
—
VDD − 40
mV
VDD = 5.5V, G = +2,
0.5V Input Overdrive
ISC
±40
±85
±130
mA
VDD = 2.5V (Note 2)
ISC
±35
±70
±110
mA
VDD = 5.5V (Note 2)
VDD
2.5
—
5.5
V
IQ
1.2
2.5
3.6
mA
Common Mode
Open Loop Gain
DC Open Loop Gain (large signal)
Output
Maximum Output Voltage Swing
Output Short Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
Note 1:
2:
No Load Current
See Figure 2-5 for temperature effects.
The ISC specifications are for design guidance only; they are not tested.
© 2009 Microchip Technology Inc.
DS22197A-page 3
MCP631/2/3/5
TABLE 1-2:
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2,
VOUT ≈ VDD/2, VL = VDD/2, RL = 2 kΩ to VL, CL = 50 pF and CS = VSS (refer to Figure 1-2).
Parameters
Sym
Min
Typ
Max
Units
Conditions
GBWP
—
24
—
MHz
PM
—
65
—
°
ROUT
—
20
—
Ω
THD+N
—
0.0015
—
%
G = +1, VOUT = 2VP-P, f = 1 kHz,
VDD = 5.5V, BW = 80 kHz
G = +1, VOUT = 100 mVP-P
AC Response
Gain Bandwidth Product
Phase Margin
Open Loop Output Impedance
G = +1
AC Distortion
Total Harmonic Distortion plus Noise
Step Response
tr
—
20
—
ns
SR
—
10
—
V/µs
G = +1
Input Noise Voltage
Eni
—
16
—
µVP-P
f = 0.1 Hz to 10 Hz
Input Noise Voltage Density
eni
—
10
—
nV/√Hz f = 1 MHz
Input Noise Current Density
ini
4
—
fA/√Hz f = 1 kHz
Rise Time, 10% to 90%
Slew Rate
Noise
TABLE 1-3:
DIGITAL ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2,
VOUT ≈ VDD/2, VL = VDD/2, RL = 2 kΩ to VL, CL = 50 pF and CS = VSS (refer to Figure 1-1 and Figure 1-2).
Parameters
Sym
Min
Typ
Max
Units
Conditions
CS Logic Threshold, Low
VIL
VSS
—
0.2VDD
V
CS Input Current, Low
ICSL
—
0.1
—
nA
CS Logic Threshold, High
VIH
0.8VDD
VDD
V
CS Input Current, High
ICSH
—
0.7
—
µA
GND Current
ISS
-2
-1
—
µA
CS Internal Pull Down Resistor
RPD
—
5
—
MΩ
IO(LEAK)
—
50
—
nA
VHYST
—
0.25
—
V
CS High to Amplifier Off Time
(output goes High-Z)
tOFF
—
200
—
ns
G = +1 V/V, VL = VSS
CS = 0.8VDD to VOUT = 0.1(VDD/2)
CS Low to Amplifier On Time
tON
—
2
10
µs
G = +1 V/V, VL = VSS,
CS = 0.2VDD to VOUT = 0.9(VDD/2)
CS Low Specifications
CS = 0V
CS High Specifications
Amplifier Output Leakage
CS = VDD
CS = VDD, TA = +125°C
CS Dynamic Specifications
CS Input Hysteresis
DS22197A-page 4
© 2009 Microchip Technology Inc.
MCP631/2/3/5
TABLE 1-4:
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, all limits are specified for: VDD = +2.5V to +5.5V, VSS = GND.
Parameters
Sym
Min
Typ
Max
Units
Specified Temperature Range
TA
-40
—
+125
°C
Operating Temperature Range
TA
-40
—
+125
°C
Storage Temperature Range
TA
-65
—
+150
°C
Conditions
Temperature Ranges
(Note 1)
Thermal Package Resistances
Thermal Resistance, 8L-3x3 DFN
θJA
—
60
—
°C/W
Thermal Resistance, 8L-SOIC
θJA
—
149.5
—
°C/W
Thermal Resistance, 10L-3x3 DFN
θJA
—
57
—
°C/W
Thermal Resistance, 10L-MSOP
θJA
—
202
—
°C/W
(Note 2)
Operation must not cause TJ to exceed Maximum Junction Temperature specification (+150°C).
Measured on a standard JC51-7, four layer printed circuit board with ground plane and vias.
Note 1:
2:
1.3
(Note 2)
Timing Diagram
EQUATION 1-1:
G DM = R F ⁄ R G
ICS
0.1 nA
(typical)
0.7 µA
(typical)
VIH
VIL
CS
tON
VOUT
tOFF
G N = 1 + G DM
V CM = V P ( 1 – 1 ⁄ G N ) + V REF ( 1 ⁄ G N )
V OST = V IN– – V IN+
V OUT = V REF + ( V P – V M )G DM + V OST G N
Where:
GDM = Differential Mode Gain
High-Z
FIGURE 1-1:
High-Z
On
-2.5 mA
(typical)
-1 µA
ISS
(typical)
1.4
0.7 µA
(typical)
-1 µA
(typical)
(V/V)
GN = Noise Gain
(V/V)
VCM = Op Amp’s Common Mode
Input Voltage
(V)
VOST = Op Amp’s Total Input Offset
Voltage
(mV)
Timing Diagram.
Test Circuits
The circuit used for most DC and AC tests is shown in
Figure 1-2. It independently sets VCM and VOUT; see
Equation 1-1. The circuit’s common mode voltage is
(VP + VM)/2, not VCM. VOST includes VOS plus the
effects of temperature, CMRR, PSRR and AOL.
CF
6.8 pF
RG
10 kΩ
RF
10 kΩ
VREF = VDD/2
VP
VDD
VIN+
CB1
100 nF
MCP63X
CB2
2.2 µF
VIN–
VM
RG
10 kΩ
RL
2 kΩ
RF
10 kΩ
CF
6.8 pF
VOUT
CL
50 pF
VL
FIGURE 1-2:
AC and DC Test Circuit for
Most Specifications.
© 2009 Microchip Technology Inc.
DS22197A-page 5
MCP631/2/3/5
NOTES:
DS22197A-page 6
© 2009 Microchip Technology Inc.
MCP631/2/3/5
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 2 kΩ to VL, CL = 50 pF and CS = VSS.
DC Signal Inputs
Percentage of Occurrences
14%
396 Samples
TA = +25°C
VDD = 2.5V and 5.5V
12%
10%
8%
6%
4%
2%
0%
-6 -5 -4 -3 -2 -1 0 1 2 3
Input Offset Voltage (mV)
FIGURE 2-1:
14%
12%
5
-1.0
-1.2
-1.4
-1.6
-1.8
-2.0
-2.2
-2.4
-2.6
-2.8
-3.0
6
Input Offset Voltage.
Representative Part
VDD = 2.5V
VDD = 5.5V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Output Voltage (V)
FIGURE 2-4:
Output Voltage.
0.0
398 Samples
VDD = 2.5V and 5.5V
TA = -40°C to +125°C
Low Input Common
Mode Headroom (V)
Percentage of Occurrences
16%
4
Input Offset Voltage (mV)
2.1
10%
8%
6%
4%
2%
0%
1 Lot
Low (VCMR_L – VSS)
-0.1
-0.2
-0.3
VDD = 2.5V and 5.5V
-0.4
-0.5
-8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8
-50
-25
Input Offset Voltage Drift (µV/°C)
-2.0
-2.2
-2.4
-2.6
-2.8
-3.0
-3.2
-3.4
-3.6
-3.8
-4.0
Input Offset Voltage Drift.
1.3
Representative Part
VCM = VSS
+125°C
+85°C
+25°C
-40°C
0
25
50
75
100
Ambient Temperature (°C)
125
FIGURE 2-5:
Low Input Common Mode
Voltage Headroom vs. Ambient Temperature.
High Input Common
Mode Headroom (V)
Input Offset Voltage (mV)
FIGURE 2-2:
Input Offset Voltage vs.
1 Lot
High (VDD – VCMR_H)
1.2
VDD = 2.5V
1.1
1.0
VDD = 5.5V
0.9
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
Power Supply Voltage (V)
FIGURE 2-3:
Input Offset Voltage vs.
Power Supply Voltage with VCM = 0V.
© 2009 Microchip Technology Inc.
-50
-25
0
25
50
75
100
Ambient Temperature (°C)
125
FIGURE 2-6:
High Input Common Mode
Voltage Headroom vs. Ambient Temperature.
DS22197A-page 7
MCP631/2/3/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 2 kΩ to VL, CL = 50 pF and CS = VSS.
1.5
130
VDD = 2.5V
Representative Part
DC Open-Loop Gain (dB)
Input Offset Voltage (mV)
2.0
+125°C
+85°C
+25°C
-40°C
1.0
0.5
0.0
-0.5
-1.0
-1.5
VDD = 5.5V
120
115
VDD = 2.5V
110
105
100
3.0
2.5
2.0
1.5
1.0
0.5
-0.5
0.0
-2.0
125
-50
-25
Input Common Mode Voltage (V)
FIGURE 2-7:
Input Offset Voltage vs.
Common Mode Voltage with VDD = 2.5V.
1.5
1.0
+125°C
+85°C
+25°C
-40°C
0.5
0.0
-0.5
-1.0
-1.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-0.5
-2.0
Input Common Mode Voltage (V)
VDD = 5.5V
125
120
115
VDD = 2.5V
110
105
100
95
100
1.E+02
1k
10k
1.E+03
1.E+04
Load Resistance (Ω)
FIGURE 2-11:
Load Resistance.
FIGURE 2-8:
Input Offset Voltage vs.
Common Mode Voltage with VDD = 5.5V.
1.E-08
10n
Input Bias, Offset Currents
(pA)
CMRR, PSRR (dB)
125
130
VDD = 5.5V
Representative Part
110
105
100
95
90
85
80
75
70
65
60
100
FIGURE 2-10:
DC Open-Loop Gain vs.
Ambient Temperature.
DC Open-Loop Gain (dB)
Input Offset Voltage (mV)
2.0
0
25
50
75
Ambient Temperature (°C)
100k
1.E+05
DC Open-Loop Gain vs.
VDD = 5.5V
VCM = VCMR_H
1n
1.E-09
CMRR, VDD = 2.5V
CMRR, VDD = 5.5V
100p
1.E-10
IB
10p
1.E-11
PSRR
| IOS |
1p
1.E-12
-50
-25
0
25
50
75
Ambient Temperature (°C)
100
FIGURE 2-9:
CMRR and PSRR vs.
Ambient Temperature.
DS22197A-page 8
125
25
45
65
85
105
Ambient Temperature (°C)
125
FIGURE 2-12:
Input Bias and Offset
Currents vs. Ambient Temperature with
VDD = +5.5V.
© 2009 Microchip Technology Inc.
MCP631/2/3/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 2 kΩ to VL, CL = 50 pF and CS = VSS.
2000
FIGURE 2-13:
Input Bias Current vs. Input
Voltage (below VSS).
Representative Part
TA = +125°C
VDD = 5.5V
6.0
5.5
5.0
4.5
-1500
4.0
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
Input Voltage (V)
-1000
3.5
10p
1.E-11
1p
1.E-12
-500
3.0
+125°C
+85°C
+25°C
-40°C
IOS
0
2.5
1n
1.E-09
100p
1.E-10
500
2.0
100n
1.E-07
10n
1.E-08
1000
1.5
1µ
1.E-06
1.0
10µ
1.E-05
IB
1500
0.5
100µ
1.E-04
0.0
Input Bias, Offset Currents
(pA)
Input Current Magnitude (A)
1.E-03
1m
Common Mode Input Voltage (V)
FIGURE 2-15:
Input Bias and Offset
Currents vs. Common Mode Input Voltage with
TA = +125°C.
150
IB
100
50
0
IOS
-50
-100
-150
Representative Part
TA = +85°C
VDD = 5.5V
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
-200
0.0
Input Bias, Offset Currents
(pA)
200
Common Mode Input Voltage (V)
FIGURE 2-14:
Input Bias and Offset
Currents vs. Common Mode Input Voltage with
TA = +85°C.
© 2009 Microchip Technology Inc.
DS22197A-page 9
MCP631/2/3/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 2 kΩ to VL, CL = 50 pF and CS = VSS.
Other DC Voltages and Currents
3.5
3.0
Supply Current
(mA/amplifier)
VDD = 5.5V
100
VDD = 2.5V
VOL – VSS
10
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
100
Power Supply Voltage (V)
FIGURE 2-19:
Supply Voltage.
Supply Current vs. Power
3.5
RL = 2 kΩ
3.0
Supply Current
(mA/amplifier)
VOL – VSS
VDD = 5.5V
VDD = 5.5V
2.5
2.0
VDD = 2.5V
1.5
1.0
0.5
6.0
5.5
5.0
4.5
4.0
Common Mode Input Voltage (V)
FIGURE 2-17:
Output Voltage Headroom
vs. Ambient Temperature.
100
80
60
40
20
0
-20
-40
-60
-80
-100
3.5
125
3.0
100
2.5
0.0
0
25
50
75
Ambient Temperature (°C)
2.0
-25
1.5
-50
VDD – VOH
1.0
VDD = 2.5V
-0.5
Output Headroom (mV)
1.0
0.0
1
10
Output Current Magnitude (mA)
FIGURE 2-16:
Output Voltage Headroom
vs. Output Current.
FIGURE 2-20:
Supply Current vs. Common
Mode Input Voltage.
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
+125°C
+85°C
+25°C
-40°C
0.0
Output Short Circuit Current
(mA)
+125°C
+85°C
+25°C
-40°C
1.5
0.0
1
20
18
16
14
12
10
8
6
4
2
0
2.0
0.5
VDD – VOH
0.1
2.5
0.5
Output Voltage Headroom
(mV)
1000
0.0
2.2
Power Supply Voltage (V)
FIGURE 2-18:
Output Short Circuit Current
vs. Power Supply Voltage.
DS22197A-page 10
© 2009 Microchip Technology Inc.
MCP631/2/3/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 2 kΩ to VL, CL = 50 pF and CS = VSS.
Frequency Response
34
80
70
60
50
CMRR
PSRR+
PSRR-
30
20
55
24
50
22
45
GBWP
0
36
-30
34
100
-60
∠AOL
-90
60
-120
40
-150
| AOL |
-180
0
-210
-20
-240
65
60
55
50
22
GBWP
20
-50
-25
0
25
50
75 100
Ambient Temperature (°C)
45
40
125
FIGURE 2-23:
Gain Bandwidth Product
and Phase Margin vs. Ambient Temperature.
© 2009 Microchip Technology Inc.
Closed-Loop Output Impedance (Ω)
70
Phase Margin (°)
32
24
6.0
5.5
5.0
4.0
3.5
4.5
60
26
55
24
50
22
45
GBWP
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Output Voltage (V)
80
75
VDD = 5.5V
VDD = 2.5V
65
VDD = 5.5V
VDD = 2.5V
28
FIGURE 2-25:
Gain Bandwidth Product
and Phase Margin vs. Output Voltage.
34
30
70
20
Open-Loop Gain vs.
PM
75
PM
30
Frequency (Hz)
36
80
32
1 1.E+1
1M 10M
10 1.E+2
100 1.E+3
1k 1.E+4
10k 100k
1.E+0
1.E+5 1.E+6
1.E+7 100M
1.E+8
FIGURE 2-22:
Frequency.
3.0
FIGURE 2-24:
Gain Bandwidth Product
and Phase Margin vs. Common Mode Input
Voltage.
120
20
2.5
Common Mode Input Voltage (V)
CMRR and PSRR vs.
80
2.0
40
1.5
10M
1.E+7
1.0
1M
1.E+6
0.5
100k
1.E+5
Frequency (Hz)
0.0
10k
1.E+4
Gain Bandwidth Product
(MHz)
Open-Loop Gain (dB)
60
26
140
Gain Bandwidth Product
(MHz)
65
VDD = 5.5V
VDD = 2.5V
28
-0.5
1k
1.E+3
FIGURE 2-21:
Frequency.
26
70
30
20
10
100
1.E+2
28
75
PM
32
Phase Margin (°)
40
80
Phase Margin (°)
36
90
Gain Bandwidth Product
(MHz)
100
Open-Loop Phase (°)
CMRR, PSRR (dB)
2.3
100
10
G = 101 V/V
G = 11 V/V
G = 1 V/V
1
0.1
10k
1.0E+04
100k
1.0E+05
1M
10M
1.0E+06
1.0E+07
Frequency (Hz)
100M
1.0E+08
FIGURE 2-26:
Closed-Loop Output
Impedance vs. Frequency.
DS22197A-page 11
MCP631/2/3/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 2 kΩ to VL, CL = 50 pF and CS = VSS.
10
8
GN = 1 V/V
GN = 2 V/V
GN ≥ 4 V/V
7
6
5
4
3
2
1
0
10p
1.0E-11
100p
1n
1.0E-10
1.0E-09
Normalized Capacitive Load; CL/GN (F)
FIGURE 2-27:
Gain Peaking vs.
Normalized Capacitive Load.
DS22197A-page 12
Channel-to-Channel
Separation; RTI (dB)
Gain Peaking (dB)
9
150
140
130
120
110
100
90
80
70
RS = 10 kΩ
60 RS = 100 kΩ
50
1k
10k
1.E+03
1.E+04
RS = 0Ω
RS = 100Ω
RS = 1 kΩ
VCM = VDD/2
G = +1 V/V
100k
1M
1.E+05
1.E+06
Frequency (Hz)
10M
1.E+07
FIGURE 2-28:
Channel-to-Channel
Separation vs. Frequency.
© 2009 Microchip Technology Inc.
MCP631/2/3/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 2 kΩ to VL, CL = 50 pF and CS = VSS.
Noise and Distortion
1.E+4
10µ
Input Noise; e ni(t) (µV)
20
1.E+3
1µ
100n
1.E+2
10n
1.E+1
1
1.E+0
10
1.E+1
10
5
0
-5
-10
Analog NPBW = 0.1 Hz
Sample Rate = 2 SPS
VOS = -3150 µV
-15
100
1.E+2
1k
1.E+3
0
100k
10M
1M 1.E+7
1.E+5 1.E+6
10k
1.E+4
Frequency (Hz)
Input Noise Voltage Density
5 10 15 20 25 30 35 40 45 50 55 60 65
Time (min)
FIGURE 2-32:
0.1 Hz Filter.
THD + Noise (%)
VDD = 2.5V
VDD = 5.5V
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.0
0.5
FIGURE 2-30:
Input Noise Voltage Density
vs. Input Common Mode Voltage with f = 100 Hz.
0.01
0.001
0.0001
100
1.E+2
FIGURE 2-33:
VDD = 5.0V
VOUT = 2 VP-P
1k
1.E+3
10k
1.E+4
Frequency (Hz)
100k
1.E+5
THD+N vs. Frequency.
VDD = 2.5V
VDD = 5.5V
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
f = 1 MHz
-0.5
Input Noise Voltage Density
(nV/√Hz)
G = 1 V/V
G = 11 V/V
BW = 22 Hz to > 500 kHz
BW = 22 Hz to 80 kHz
f = 100 Hz
0.0
0.1
Common Mode Input Voltage (V)
20
18
16
14
12
10
8
6
4
2
0
Input Noise vs. Time with
1
-0.5
Input Noise Voltage Density
(nV/√Hz)
FIGURE 2-29:
vs. Frequency.
200
180
160
140
120
100
80
60
40
20
0
Representative Part
15
-20
1n
1.E+0
0.1
1.E-1
1.5
Input Noise Voltage Density (V/√Hz)
2.4
Common Mode Input Voltage (V)
FIGURE 2-31:
Input Noise Voltage Density
vs. Input Common Mode Voltage with f = 1 MHz.
© 2009 Microchip Technology Inc.
DS22197A-page 13
MCP631/2/3/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 2 kΩ to VL, CL = 50 pF and CS = VSS.
2.5
Time Response
0.0
0.1
VOUT
0.2
Output Voltage (V)
FIGURE 2-34:
Step Response.
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Output Voltage (V)
VIN
0.3
0.4
0.5
Time (µs)
0.6
0.7
Non-inverting Small Signal
VIN
VOUT
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Time (µs)
FIGURE 2-37:
Response.
Inverting Large Signal Step
VOUT
VDD = 5.5V
G=2
6
VOUT
5
VIN
4
3
2
1
0
-1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Time (µs)
FIGURE 2-35:
Step Response.
Non-inverting Large Signal
0
Slew Rate (V/µs)
Output Voltage (10 mV/div)
VDD = 5.5V
G = -1
RF = 1 kΩ
VOUT
0.1
0.2
FIGURE 2-36:
Response.
DS22197A-page 14
0.3
0.4
0.5
Time (µs)
0.6
0.7
0.8
Inverting Small Signal Step
1
2
3
4
5
6
Time (ms)
7
8
9
10
FIGURE 2-38:
The MCP631/2/3/5 family
shows no input phase reversal with overdrive.
VIN
0.0
VDD = 5.5V
G = -1
RF = 1 kΩ
7
VDD = 5.5V
G=1
VIN
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.8
Input, Output Voltages (V)
Output Voltage (10 mV/div)
VDD = 5.5V
G=1
24
22
20
18
16
14
12
10
8
6
4
2
0
Falling Edge
VDD = 5.5V
VDD = 2.5V
Rising Edge
-50
-25
FIGURE 2-39:
Temperature.
0
25
50
75
Ambient Temperature (°C)
100
125
Slew Rate vs. Ambient
© 2009 Microchip Technology Inc.
MCP631/2/3/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 2 kΩ to VL, CL = 50 pF and CS = VSS.
Maximum Output Voltage
Swing (V P-P )
10
VDD = 5.5V
VDD = 2.5V
1
0.1
100k
1.E+05
1M
10M
1.E+06
1.E+07
Frequency (Hz)
100M
1.E+08
FIGURE 2-40:
Maximum Output Voltage
Swing vs. Frequency.
© 2009 Microchip Technology Inc.
DS22197A-page 15
MCP631/2/3/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 2 kΩ to VL, CL = 50 pF and CS = VSS.
Chip Select Response
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.40
CS = VDD
0.35
CS Hysteresis (V)
CS Current (µA)
2.6
0.30
0.25
0.15
0.05
0.00
FIGURE 2-41:
Supply Voltage.
-50
CS
2.0
1.5
VOUT
1.0
On
0.5
0.0
Off
100
125
CS Hysteresis vs. Ambient
4
3
VDD = 2.5V
2
1
VDD = 5.5V
Off
0
-0.5
2
4
6
8 10 12
Time (µs)
14
16
18
20
FIGURE 2-42:
CS and Output Voltages vs.
Time with VDD = 2.5V.
6
4
3
VOUT
2
On
1
-25
Off
Off
0
25
50
75
Ambient Temperature (°C)
100
125
FIGURE 2-45:
CS Turn On Time vs.
Ambient Temperature.
8
VDD = 5.5V
G=1
VL = 0V
CS
5
-50
CS Pull-down Resistor
(MΩ)
0
0
0
25
50
75
Ambient Temperature (°C)
5
VDD = 2.5V
G=1
VL = 0V
CS Turn On Time (µs)
2.5
-25
FIGURE 2-44:
Temperature.
CS Current vs. Power
3.0
CS, V OUT (V)
VDD = 2.5V
0.10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power Supply Voltage (V)
CS, V OUT (V)
VDD = 5.5V
0.20
Representative Part
7
6
5
4
3
2
1
0
-1
0
2
4
6
8
10 12
Time (µs)
14
16
18
20
FIGURE 2-43:
CS and Output Voltages vs.
Time with VDD = 5.5V.
DS22197A-page 16
-50
-25
0
25
50
75
Ambient Temperature (°C)
100
125
FIGURE 2-46:
CS’s Pull-down Resistor
(RPD) vs. Ambient Temperature.
© 2009 Microchip Technology Inc.
MCP631/2/3/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
CS = VDD
1.E-06
1µ
Output Leakage Current (A)
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
-2.0
-2.2
CS = VDD = 5.5V
1.E-07
100n
10n
1.E-08
1n
1.E-09
FIGURE 2-47:
Quiescent Current in
Shutdown vs. Power Supply Voltage.
6.5
6.0
5.5
5.0
4.5
4.0
Power Supply Voltage (V)
© 2009 Microchip Technology Inc.
+125°C
+85°C
100p
1.E-10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
-40°C
+25°C
+85°C
+125°C
0.0
Negative Power Supply
Current; I SS (µA)
VL = VDD/2, RL = 2 kΩ to VL, CL = 50 pF and CS = VSS.
+25°C
10p
1.E-11
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Output Voltage (V)
FIGURE 2-48:
Output Voltage.
Output Leakage Current vs.
DS22197A-page 17
MCP631/2/3/5
NOTES:
DS22197A-page 18
© 2009 Microchip Technology Inc.
MCP631/2/3/5
3.0
PIN DESCRIPTIONS
Descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
MCP631
PIN FUNCTION TABLE
MCP632
MCP633
MCP635
Symbol
Description
SOIC
SOIC
DFN
SOIC
MSOP
DFN
6
2
3
4
1
2
3
4
1
2
3
4
6
2
3
4
1
2
3
4
1
2
3
4
VOUT, VOUTA
VIN–, VINA–
VIN+, VINA+
VSS
—
—
—
8
5
5
CS, CSA
Chip Select Digital Input (op amp A)
—
—
—
—
7
1,5,8
—
—
5
6
7
8
—
—
—
5
6
7
8
—
9
—
—
—
—
7
1,5
—
6
7
8
9
10
—
—
6
7
8
9
10
—
11
CSB
VINB+
VINB–
VOUTB
VDD
NC
EP
Chip Select Digital Input (op amp B)
Non-inverting Input (op amp B)
Inverting Input (op amp B)
Output (op amp B)
Positive Power Supply
No Internal Connection
Exposed Thermal Pad (EP);
must be connected to VSS
3.1
Analog Outputs
3.4
Output (op amp A)
Inverting Input (op amp A)
Non-inverting Input (op amp A)
Negative Power Supply
Chip Select Digital Input (CS)
The analog output pins (VOUT) are low-impedance
voltage sources.
This input (CS) is a CMOS, Schmitt-triggered input that
places the part into a low power mode of operation.
3.2
3.5
Analog Inputs
Exposed Thermal Pad (EP)
The non-inverting and inverting inputs (VIN+, VIN–, …)
are high-impedance CMOS inputs with low bias
currents.
There is an internal connection between the Exposed
Thermal Pad (EP) and the VSS pin; they must be
connected to the same potential on the Printed Circuit
Board (PCB).
3.3
This pad can be connected to a PCB ground plane to
provide a larger heat sink. This improves the package
thermal resistance (θJA).
Power Supply Pins
The positive power supply (VDD) is 2.5V to 5.5V higher
than the negative power supply (VSS). For normal
operation, the other pins are between VSS and VDD.
Typically, these parts are used in a single (positive)
supply configuration. In this case, VSS is connected to
ground and VDD is connected to the supply. VDD will
need bypass capacitors.
© 2009 Microchip Technology Inc.
DS22197A-page 19
MCP631/2/3/5
NOTES:
DS22197A-page 20
© 2009 Microchip Technology Inc.
MCP631/2/3/5
4.0
APPLICATIONS
VDD
The MCP631/2/3/5 family op amps is manufactured
using Microchip’s state of the art CMOS process. It is
designed for low cost, low power and high speed
applications. Its low supply voltage, low quiescent
current and wide bandwidth make the MCP631/2/3/5
ideal for battery-powered applications.
4.1
V1
V2
Input
4.1.1
INPUT VOLTAGE AND CURRENT
LIMITS
The ESD protection on the inputs can be depicted as
shown in Figure 4-1. This structure was chosen to
protect the input transistors, and to minimize input bias
current (IB). The input ESD diodes clamp the inputs
when they try to go more than one diode drop below
VSS. They also clamp any voltages that go too far
above VDD; their breakdown voltage is high enough to
allow normal operation, and low enough to bypass
quick ESD events within the specified limits.
Input
Stage
Bond V –
IN
Pad
VOUT
R2
FIGURE 4-2:
Inputs.
Protecting the Analog
It is also possible to connect the diodes to the left of the
resistor R1 and R2. In this case, the currents through
the diodes D1 and D2 need to be limited by some other
mechanism. The resistors then serve as in-rush
current limiters; the DC current into the input pins
(VIN+ and VIN–) should be very small.
A significant amount of current can flow out of the
inputs (through the ESD diodes) when the common
mode voltage (VCM) is below ground (VSS); see
Figure 2-13. Applications that are high impedance may
need to limit the usable voltage range.
NORMAL OPERATION
The input stage of the MCP631/2/3/5 op amps uses a
differential PMOS input stage. It operates at
low common mode input voltages (VCM), with VCM
between VSS – 0.3V and VDD – 1.3V. To ensure proper
operation, the input offset voltage (VOS) is measured
at both
VCM = VSS – 0.3V
and
VDD – 1.3V.
See Figure 2-5 and Figure 2-6 for temperature effects.
When operating at very low non-inverting gains, the
output voltage is limited at the top by the VCM range
(< VDD – 1.3V); see Figure 4-3.
VSS Bond
Pad
FIGURE 4-1:
Structures.
MCP63X
VSS – (minimum expected V1)
2 mA
VSS – (minimum expected V2)
R2 >
2 mA
4.1.3
VDD Bond
Pad
VIN+ Bond
Pad
D2
R1 >
PHASE REVERSAL
The input devices are designed to not exhibit phase
inversion when the input pins exceed the supply
voltages. Figure 2-38 shows an input voltage
exceeding both supplies with no phase inversion.
4.1.2
D1
R1
Simplified Analog Input ESD
In order to prevent damage and/or improper operation
of these amplifiers, the circuit must limit the currents
(and voltages) at the input pins (see Section 1.1
“Absolute Maximum Ratings †”). Figure 4-2 shows
the recommended approach to protecting these inputs.
The internal ESD diodes prevent the input pins
(VIN+ and VIN–) from going too far below ground, and
the resistors R1 and R2 limit the possible current drawn
out of the input pins. Diodes D1 and D2 prevent the
input pins (VIN+ and VIN–) from going too far above
VDD, and dump any currents onto VDD. When
implemented as shown, resistors R1 and R2 also limit
the current through D1 and D2.
© 2009 Microchip Technology Inc.
VDD
VIN
MCP63X
VOUT
V SS < V IN, V OUT ≤ V DD – 1.3V
FIGURE 4-3:
Unity Gain Voltage
Limitations for Linear Operation.
DS22197A-page 21
MCP631/2/3/5
4.2
Rail-to-Rail Output
4.2.1
VDD
MAXIMUM OUTPUT VOLTAGE
IDD
The Maximum Output Voltage (see Figure 2-16 and
Figure 2-17) describes the output range for a given
load. For instance, the output voltage swings to within
50 mV of the negative rail with a 1 kΩ load tied to
VDD/2.
4.2.2
VOH Limited
RL = 1 kΩ
-ISC Limited
RL = 100Ω
RL = 10Ω
4.2.3
120
80
100
60
40
0
20
-20
-40
-60
-80
-100
POWER DISSIPATION
Since the output short circuit current (ISC) is specified
at ±70 mA (typical), these op amps are capable of both
delivering and dissipating significant power.
Figure 4-5 show the quantities used in the following
power calculations for a single op amp. RSER is 0 Ω in
most applications; it can be used to limit IOUT. VOUT is
the op amp’s output voltage, VL is the voltage at the
load, and VLG is the load’s ground point. VSS is usually
ground (0V). The input currents are assumed to be
negligible. The currents shown are approximately:
VLG
VSS
FIGURE 4-5:
Calculations.
Diagram for Power
The instantaneous op amp power (POA(t)), RSER power
(PRSER(t)) and load power (PL(t)) are:
The maximum op amp power, for resistive loads,
occurs when VOUT is halfway between VDD and VLG or
halfway between VSS and VLG:
EQUATION 4-3:
POAmax ≤
max2(VDD – VLG , VLG – VSS)
4(RSER + RL)
The maximum ambient to junction temperature rise
(ΔTJA) and junction temperature (TJ) can be calculated
using POAmax, ambient temperature (TA), the package
thermal resistance (θJA) found in Table 1-4, and the
number of op amps in the package (assuming equal
power dissipations):
EQUATION 4-4:
ΔTJA = POA(t) θJA ≤ n POAmaxθJA
TJ = TA + ΔTJA
EQUATION 4-1:
RSER + RL
RL
PL(t) = IL2RL
Output Current.
VOUT – VLG
IL
ISS
PRSER(t) = IOUT2RSER
IOUT (mA)
IOUT = IL =
VL
POA(t) = IDD (VDD – VOUT) + ISS (VSS – VOUT)
VOL Limited
FIGURE 4-4:
RSER
EQUATION 4-2:
+ISC Limited
(VDD = 5.5V)
-120
VOUT (V)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-0.5
IOUT
MCP63X
OUTPUT CURRENT
Figure 4-4 shows the possible combinations of output
voltage (VOUT) and output current (IOUT), when
VDD = 5.5V. IOUT is positive when it flows out of the op
amp into the external circuit.
VOUT
Where:
n
=
number of op amps in package (1, 2)
IDD ≈ IQ + max(0, IOUT)
ISS ≈ –IQ + min(0, IOUT)
Where:
IQ
=
quiescent supply current
DS22197A-page 22
© 2009 Microchip Technology Inc.
MCP631/2/3/5
The power de-rating across temperature for an op amp
in a particular package can be easily calculated
(assuming equal power dissipations):
EQUATION 4-5:
T
– TA
POAmax ≤ Jmax
n θJA
=
absolute maximum junction temperature
Several techniques are available to reduce ΔTJA for a
given POAmax:
• Lower θJA
- Use another package
- PCB layout (ground plane, etc.)
- Heat sinks and air flow
• Reduce POAmax
- Increase RL
- Limit IOUT (using RSER)
- Decrease VDD
4.3
4.3.1
GN = +1
GN ≥ +2
100p
1n
1.E-11
1.E-10
1.E-09
Normalized Capacitance; CL/GN (F)
10n
1.E-08
FIGURE 4-7:
Recommended RISO Values
for Capacitive Loads.
CAPACITIVE LOADS
Driving large capacitive loads can cause stability
problems for voltage feedback op amps. As the load
capacitance increases, the feedback loop’s phase
margin decreases and the closed-loop bandwidth is
reduced. This produces gain peaking in the frequency
response, with overshoot and ringing in the step
response. A unity gain buffer (G = +1) is the most
sensitive to capacitive loads, though all gains show the
same general behavior.
When driving large capacitive loads with these op
amps (e.g., > 20 pF when G = +1), a small series
resistor at the output (RISO in Figure 4-6) improves the
feedback loop’s phase margin (stability) by making the
output load resistive at higher frequencies. The
bandwidth will be generally lower than the bandwidth
with no capacitive load.
RF
100
10
10p
1.E-12
Improving Stability
RG
Recommended R ISO (Ω)
1,000
Where:
TJmax
Figure 4-7 gives recommended RISO values for
different capacitive loads and gains. The x-axis is the
normalized load capacitance (CL/GN), where GN is the
circuit’s noise gain. For non-inverting gains, GN and the
Signal Gain are equal. For inverting gains, GN is
1+|Signal Gain| (e.g., -1 V/V gives GN = +2 V/V).
After selecting RISO for your circuit, double check the
resulting frequency response peaking and step
response overshoot. Modify RISO’s value until the
response is reasonable. Bench evaluation and
simulations with the MCP631/2/3/5 SPICE macro
model are helpful.
4.3.2
GAIN PEAKING
Figure 4-8 shows an op amp circuit that represents
non-inverting amplifiers (VM is a DC voltage and VP is
the input) or inverting amplifiers (VP is a DC voltage
and VM is the input). The capacitances CN and CG
represent the total capacitance at the input pins; they
include the op amp’s common mode input capacitance
(CCM), board parasitic capacitance and any capacitor
placed in parallel.
VP
VM
RISO
VOUT
RN
CN
MCP63X
VOUT
RG
CG
RF
CL
RN
MCP63X
FIGURE 4-6:
Output Resistor, RISO
stabilizes large capacitive loads.
© 2009 Microchip Technology Inc.
FIGURE 4-8:
Capacitance.
Amplifier with Parasitic
CG acts in parallel with RG (except for a gain of +1 V/V),
which causes an increase in gain at high frequencies.
CG also reduces the phase margin of the feedback
loop, which becomes less stable. This effect can be
reduced by either reducing CG or RF.
DS22197A-page 23
MCP631/2/3/5
CN and RN form a low-pass filter that affects the signal
at VP. This filter has a single real pole at 1/(2πRNCN).
1.E+05
100k
CG = 10 pF
CG = 32 pF
CG = 100 pF
CG = 320 pF
CG = 1 nF
Maximum Recommended R
(Ω)
F
The largest value of RF that should be used depends
on noise gain (see GN in Section 4.3.1 “Capacitive
Loads”), CG and the open-loop gain’s phase shift.
Figure 4-9 shows the maximum recommended RF for
several CG values. Some applications may modify
these values to reduce either output loading or gain
peaking (step response overshoot).
10k
1.E+04
1k
1.E+03
GN > +1 V/V
100
1.E+02
1
FIGURE 4-9:
RF vs. Gain.
10
Noise Gain; GN (V/V)
Figure 2-34 and Figure 2-35 show the small signal and
large signal step responses at G = +1 V/V. The unity
gain buffer usually has RF = 0Ω and RG open.
Figure 2-36 and Figure 2-37 show the small signal and
large signal step responses at G = -1 V/V. Since the
noise gain is 2 V/V and CG ≈ 10 pF, the resistors were
chosen to be RF = RG = 1 kΩ and RN = 500Ω.
It is also possible to add a capacitor (CF) in parallel with
RF to compensate for the de-stabilizing effect of CG.
This makes it possible to use larger values of RF. The
conditions for stability are summarized in Equation 4-6.
Given:
G N1 = 1 + R F ⁄ R G
G N2 = 1 + C G ⁄ C F
fF = 1 ⁄ ( 2 π RF CF )
f Z = f F ( G N1 ⁄ G N2 )
We need:
f F ≤ f GBWP ⁄ ( 2G N2 ) , G N1 < G N2
f F ≤ f GBWP ⁄ ( 4G N1 ) , G N1 > G N2
MCP633 and MCP635 Chip Select
The MCP633 is a single amplifier with Chip Select
(CS). When CS is pulled high, the supply current drops
to 1 µA (typical) and flows through the CS pin to VSS.
When this happens, the amplifier output is put into a
high-impedance state. By pulling CS low, the amplifier
is enabled. The CS pin has an internal 5 MΩ (typical)
pulldown resistor connected to VSS, so it will go low if
the CS pin is left floating. Figure 1-1, Figure 2-42 and
Figure 2-43 show the output voltage and supply current
response to a CS pulse.
The MCP635 is a dual amplifier with two CS pins; CSA
controls op amp A and CSB controls op amp B. These
op amps are controlled independently, with an enabled
quiescent current (IQ) of 2.5 mA/amplifier (typical) and
a disabled IQ of 1 µA/amplifier (typical). The IQ seen at
the supply pins is the sum of the two op amps’ IQ; the
typical value for the MCP635’s IQ will be 2 µA, 2.5 mA
or 5 mA when there are 0, 1 or 2 amplifiers enabled,
respectively.
100
Maximum Recommended
EQUATION 4-6:
4.4
4.5
Power Supply
With this family of operational amplifiers, the power
supply pin (VDD for single supply) should have a local
bypass capacitor (i.e., 0.01 µF to 0.1 µF) within 2 mm
for good high frequency performance. Surface mount,
multilayer ceramic capacitors, or their equivalent,
should be used.
These op amps require a bulk capacitor (i.e., 2.2 µF or
larger) within 50 mm to provide large, slow currents.
Tantalum capacitors, or their equivalent, may be a good
choice. This bulk capacitor can be shared with other
nearby analog parts as long as crosstalk through the
supplies does not prove to be a problem.
4.6
High Speed PCB Layout
These op amps are fast enough that a little extra care
in the PCB (Printed Circuit Board) layout can make a
significant difference in performance. Good PC board
layout techniques will help you achieve the
performance shown in the specifications and Typical
Performance Curves; it will also help you minimize
EMC (Electro-Magnetic Compatibility) issues.
Use a solid ground plane. Connect the bypass local
capacitor(s) to this plane with minimal length traces.
This cuts down inductive and capacitive crosstalk.
Separate digital from analog, low speed from high
speed, and low power from high power. This will reduce
interference.
Keep sensitive traces short and straight. Separate
them from interfering components and traces. This is
especially important for high frequency (low rise time)
signals.
DS22197A-page 24
© 2009 Microchip Technology Inc.
MCP631/2/3/5
Sometimes, it helps to place guard traces next to victim
traces. They should be on both sides of the victim
trace, and as close as possible. Connect guard traces
to ground plane at both ends, and in the middle for long
traces.
Use coax cables, or low inductance wiring, to route
signal and power to and from the PCB. Mutual and self
inductance of power wires is often a cause of crosstalk
and unusual behavior.
4.7
4.7.3
H-BRIDGE DRIVER
Figure 4-12 shows the MCP632 dual op amp used as
a H-bridge driver. The load could be a speaker or a DC
motor.
½ MCP632
VIN
Typical Applications
4.7.1
RF
POWER DRIVER WITH HIGH GAIN
Figure 4-10 shows a power driver with high gain
(1 + R2/R1). The MCP631/2/3/5 op amp’s short circuit
current makes it possible to drive significant loads. The
calibrated input offset voltage supports accurate
response at high gains. R3 should be small, and equal
to R1||R2, in order to minimize the bias current induced
offset.
VDD/2
R1
R2
RL
R3
MCP63X
VIN
FIGURE 4-10:
4.7.2
VOUT
OPTICAL DETECTOR AMPLIFIER
Figure 4-11 shows a transimpedance amplifier, using
the MCP63X op amp, in a photo detector circuit. The
photo detector is a capacitive current source.
RF provides enough gain to produce 10 mV at VOUT.
CF stabilizes the gain and limits the transimpedance
bandwidth to about 1.1 MHz. RF’s parasitic
capacitance (e.g., 0.2 pF for a 0805 SMD) acts in
parallel with CF.
CF
1.5 pF
ID
100 nA
RF
100 kΩ
CD
30pF
RL
RGT
RGB
VDD/2
RF
VOB
½ MCP632
FIGURE 4-12:
H-Bridge Driver.
This circuit automatically makes the noise gains (GN)
equal, when the gains are set properly, so that the
frequency responses match well (in magnitude and in
phase). Equation 4-7 shows how to calculate RGT and
RGB so that both op amps have the same DC gains;
GDM needs to be selected first.
EQUATION 4-7:
Power Driver.
Photo
Detector
VOT
RF
V OT – V OB
G DM ≡ -------------------------------- ≥ 1 V/V
V IN – V DD ⁄ 2
RF
R GT = -------------------------------( G DM ⁄ 2 ) – 1
RF
R GB = -----------------G DM ⁄ 2
Equation 4-8 gives the resulting common mode and
differential mode output voltages.
EQUATION 4-8:
V OT + V OB
V DD
--------------------------- = ---------2
2
VOUT
V DD⎞
V OT – V OB = G DM ⎛ V IN – ---------⎝
2 ⎠
MCP63X
VDD/2
FIGURE 4-11:
Transimpedance Amplifier
for an Optical Detector.
© 2009 Microchip Technology Inc.
DS22197A-page 25
MCP631/2/3/5
NOTES:
DS22197A-page 26
© 2009 Microchip Technology Inc.
MCP631/2/3/5
5.0
DESIGN AIDS
Microchip provides the basic design aids needed for
the MCP631/2/3/5 family of op amps.
5.1
SPICE Macro Model
The latest SPICE macro model for the MCP631/2/3/5
op amps is available on the Microchip web site at
www.microchip.com. This model is intended to be an
initial design tool that works well in the op amp’s linear
region of operation over the temperature range.
See the model file for information on its capabilities.
Bench testing is a very important part of any design and
cannot be replaced with simulations. Also, simulation
results using this macro model need to be validated by
comparing them to the data sheet specifications and
characteristic curves.
5.2
FilterLab® Software
Microchip’s FilterLab® software is an innovative
software tool that simplifies analog active filter
(using op amps) design. Available at no cost from the
Microchip web site at www.microchip.com/filterlab, the
Filter-Lab design tool provides full schematic diagrams
of the filter circuit with component values. It also
outputs the filter circuit in SPICE format, which can be
used with the macro model to simulate actual filter
performance.
5.3
Mindi™ Circuit Designer &
Simulator
Microchip’s Mindi™ Circuit Designer & Simulator aids
in the design of various circuits useful for active filter,
amplifier and power management applications. It is a
free online circuit designer & simulator available from
the Microchip web site at www.microchip.com/mindi.
This interactive circuit designer & simulator enables
designers to quickly generate circuit diagrams,
and simulate circuits. Circuits developed using the
Mindi Circuit Designer & Simulator can be downloaded
to a personal computer or workstation.
5.4
5.5
Analog Demonstration and
Evaluation Boards
Microchip offers a broad spectrum of Analog
Demonstration and Evaluation Boards that are
designed to help customers achieve faster time
to market. For a complete listing of these boards
and their corresponding user’s guides and technical
information, visit the Microchip web site at
www.microchip.com/analog tools.
Some boards that are especially useful are:
•
•
•
•
•
•
MCP6XXX Amplifier Evaluation Board 1
MCP6XXX Amplifier Evaluation Board 2
MCP6XXX Amplifier Evaluation Board 3
MCP6XXX Amplifier Evaluation Board 4
Active Filter Demo Board Kit
8-Pin SOIC/MSOP/TSSOP/DIP Evaluation Board,
P/N SOIC8EV
5.6
Application Notes
The following Microchip Application Notes are
available on the Microchip web site at www.microchip.
com/appnotes and are recommended as supplemental
reference resources.
• ADN003: “Select the Right Operational Amplifier
for your Filtering Circuits”, DS21821
• AN722: “Operational Amplifier Topologies and DC
Specifications”, DS00722
• AN723: “Operational Amplifier AC Specifications
and Applications”, DS00723
• AN884: “Driving Capacitive Loads With Op
Amps”, DS00884
• AN990: “Analog Sensor Conditioning Circuits –
An Overview”, DS00990
• AN1228: “Op Amp Precision Design: Random
Noise”, DS01228
Some of these application notes, and others, are listed
in the design guide:
• “Signal Chain Design Guide”, DS21825
Microchip Advanced Part Selector
(MAPS)
MAPS is a software tool that helps efficiently identify
Microchip devices that fit a particular design
requirement. Available at no cost from the Microchip
website at www.microchip.com/maps, the MAPS is an
overall selection tool for Microchip’s product portfolio
that includes Analog, Memory, MCUs and DSCs. Using
this tool, a customer can define a filter to sort features
for a parametric search of devices and export
side-by-side technical comparison reports. Helpful links
are also provided for Data sheets, Purchase and
Sampling of Microchip parts.
© 2009 Microchip Technology Inc.
DS22197A-page 27
MCP631/2/3/5
NOTES:
DS22197A-page 28
© 2009 Microchip Technology Inc.
MCP631/2/3/5
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
Example
8-Lead DFN (3×3) (MCP632)
XXXX
YYWW
NNN
Device
MCP632
Note:
Code
DABM
Applies to 8-Lead 3x3 DFN
8-Lead SOIC (150 mil) (MCP631, MCP632, MCP633)
XXXXXXXX
XXXXYYWW
NNN
Example
Device
MCP635
Note:
10-Lead MSOP (MCP635)
XXXXXX
YWWNNN
Legend: XX...X
Y
YY
WW
NNN
*e3
Note:
Example:
MCP631E
SN e3 0931
256
10-Lead DFN (3×3) (MCP635)
XXXX
YYWW
NNN
DABM
0931
256
Code
BAFB
BAFB
0931
256
Applies to 10-Lead 3x3 DFN
Example:
635EUN
931256
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
e3
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2009 Microchip Technology Inc.
DS22197A-page 29
MCP631/2/3/5
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© 2009 Microchip Technology Inc.
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© 2009 Microchip Technology Inc.
MCP631/2/3/5
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© 2009 Microchip Technology Inc.
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DS22197A-page 36
© 2009 Microchip Technology Inc.
MCP631/2/3/5
APPENDIX A:
REVISION HISTORY
Revision A (August 2009)
• Original Release of this Document.
© 2009 Microchip Technology Inc.
DS22197A-page 37
MCP631/2/3/5
NOTES:
DS22197A-page 38
© 2009 Microchip Technology Inc.
MCP631/2/3/5
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
-X
/XX
Device
Temperature
Range
Package
Device:
MCP631
MCP631T
MCP632
MCP632T
MCP633
MCP633T
MCP635
MCP635T
Temperature Range: E
Package:
Single Op Amp
Single Op Amp (Tape and Reel)
(SOIC)
Dual Op Amp
Dual Op Amp (Tape and Reel)
(DFN and SOIC)
Single Op Amp with CS
Single Op Amp with CS (Tape and Reel)
(SOIC)
Dual Op Amp with CS
Dual Op Amp with CS (Tape and Reel)
(DFN and MSOP)
= -40°C to +125°C
Examples:
a)
MCP631T-E/SN: Tape and Reel
Extended temperature,
8LD SOIC package
a)
MCP632T-E/MF: Tape and Reel
Extended temperature,
8LD DFN package
MCP632T-E/SN: Tape and Reel
Extended temperature,
8LD SOIC package
b)
a)
MCP633T-E/SN: Tape and Reel
Extended temperature,
8LD SOIC package
a)
MCP635T-E/MF: Tape and Reel
Extended temperature,
10LD DFN package
MCP635T-E/UN: Tape and Reel
Extended temperature,
10LD MSOP package
b)
MF = Plastic Dual Flat, No Lead (3×3 DFN),
8-lead, 10-lead
SN = Plastic Small Outline (3.90 mm), 8-lead
UN = Plastic Micro Small Outline (MSOP), 10-lead
© 2009 Microchip Technology Inc.
DS22197A-page 39
MCP631/2/3/5
NOTES:
DS22197A-page 40
© 2009 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART,
rfPIC and UNI/O are registered trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MXDEV, MXLAB, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip
Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified
logo, MPLIB, MPLINK, mTouch, Octopus, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, PIC32 logo, REAL ICE, rfLAB, Select Mode, Total
Endurance, TSHARC, UniWinDriver, WiperLock and ZENA
are trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2009, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
© 2009 Microchip Technology Inc.
DS22197A-page 41
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://support.microchip.com
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4080
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Japan - Yokohama
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Cleveland
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
Kokomo
Kokomo, IN
Tel: 765-864-8360
Fax: 765-864-8387
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
Santa Clara
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Tel: 86-10-8528-2100
Fax: 86-10-8528-2104
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
China - Hong Kong SAR
Tel: 852-2401-1200
Fax: 852-2401-3431
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
China - Shenzhen
Tel: 86-755-8203-2660
Fax: 86-755-8203-1760
Taiwan - Hsin Chu
Tel: 886-3-6578-300
Fax: 886-3-6578-370
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Kaohsiung
Tel: 886-7-536-4818
Fax: 886-7-536-4803
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
03/26/09
DS22197A-page 42
© 2009 Microchip Technology Inc.