IRFN340SMD MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M a x . 3 2 BVDSS ID(cont) RDS(on) 400V 10A 0.55W FEATURES 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) • HIGH PACKING DENSITIES SMD1 PACKAGE Pad 1 – Source Pad 2 – Drain • LIGHTWEIGHT Pad 3 – Gate Note: IRFxxxSM also available with pins 1 and 3 reversed. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD Gate – Source Voltage Continuous Drain Current (VGS = 0 , Tcase = 25°C) Continuous Drain Current (VGS = 0 , Tcase = 100°C) 1 Pulsed Drain Current Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy 2 Avalanche Energy 1 Repetitive Avalanche Energy 1 Peak Diode Recovery 3 Operating and Storage Temperature Range Package Mounting Surface Temperature (for 5 sec) Thermal Resistance Junction to Case Thermal Resistance Junction to PCB (Typical) EAS IAR EAR dv/dt TJ , Tstg TL RqJC RqJ–PCB Notes 1) 2) 2) 3) 4) ±20V 10A 6A 40A 125W 1.0W/°C 650mJ 10A 12.5mJ 4.0V/ns –55 to 150°C 300°C 1.0°C/W TBD Repetitive Rating – Pulse width limited by maximum junction temperature. @ VDD = 50V,Starting TJ = 25°C, EAS =[0.5 * L* (IL2) * [BVDSS/(BVDSS-VDD)], Peak IL = 10A VGS = 10V, 25 £ RG £ 200W ISD £ 10A , di/dt £ 120A/ms , VDD £ BVDSS , TJ £ 150°C Pulse Test: Pulse Width £ 300ms, d £ 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 7/00 IRFN340SMD ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) VGS = 0 ID = 1mA Min. Typ. Max. 400 Reference to 25°C V 0.46 ID = 1mA V / °C Static Drain – Source On–State VGS = 10V ID = 6A 0.55 Resistance4 VGS = 10V ID = 10A 0.70 VDS = VGS ID = 250mA VDS ³ 15V IDS = 6A VGS = 0 VGS(th) Gate Threshold Voltage Transconductance4 2 V (W) S(W VDS = 0.8BVDSS 25 TJ = 125°C 250 mA 4.9 Forward IDSS Zero Gate Voltage Drain Current IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V –100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 1400 Coss Output Capacitance VDS = 25V 3500 Crss Reverse Transfer Capacitance f = 1MHz 2300 Qg Total Gate Charge 1 Qgs Gate – Source Charge 1 Qgd Gate – Drain (“Miller”) Charge 1 td(on) Turn–On Delay Time tr Rise Time VDD = 200V ID = 10A 92 td(off) Turn–Off Delay Time RG = 9.1W VGS = 10V 79 tf Fall Time IS SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current ID = 10A VDS = 0.5BVDSS nA pF 32 65 2.2 10.0 13.8 40.5 nC 2.5 ns 58 10 1 ISM Pulse Source Current VSD Diode Forward Voltage4 trr Reverse Recovery Time4 Charge4 A 40 IS = 10A TJ = 25°C VGS = 0 IF = 10A TJ = 25°C di / dt £ 100A/ms VDD £ 50V Qrr Reverse Recovery ton Forward Turn–On Time LD PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) 2.0 LS Internal Source Inductance (from centre of source pad to end of source bond wire) 6.5 Semelab plc. W 4 gfs VGS = 10V Unit Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 1.5 V 600 ns 5.6 mC Negligible nH Prelim. 7/00