Seme LAB IRFN340SMD N-channel power mosfet Datasheet

IRFN340SMD
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
POWER MOSFET
4 .1 4 (0 .1 6 3 )
3 .8 4 (0 .1 5 1 )
3 .6 0 (0 .1 4 2 )
M a x .
3
2
BVDSS
ID(cont)
RDS(on)
400V
10A
0.55W
FEATURES
1 6 .0 2 (0 .6 3 1 )
1 5 .7 3 (0 .6 1 9 )
1
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
0 .7 6
(0 .0 3 0 )
m in .
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
• HERMETICALLY SEALED SURFACE
MOUNT PACKAGE
• SMALL FOOTPRINT – EFFICIENT USE OF
PCB SPACE.
• SIMPLE DRIVE REQUIREMENTS
9 .6
9 .3
1 1 .5
1 1 .2
7 (0
8 (0
8 (0
8 (0
.3 8
.3 6
.4 5
.4 4
1 )
9 )
6 )
4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
• HIGH PACKING DENSITIES
SMD1 PACKAGE
Pad 1 – Source
Pad 2 – Drain
• LIGHTWEIGHT
Pad 3 – Gate
Note: IRFxxxSM also available with
pins 1 and 3 reversed.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS
ID
ID
IDM
PD
Gate – Source Voltage
Continuous Drain Current
(VGS = 0 , Tcase = 25°C)
Continuous Drain Current
(VGS = 0 , Tcase = 100°C)
1
Pulsed Drain Current
Power Dissipation @ Tcase = 25°C
Linear Derating Factor
Single Pulse Avalanche Energy 2
Avalanche Energy 1
Repetitive Avalanche Energy 1
Peak Diode Recovery 3
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
Thermal Resistance Junction to PCB (Typical)
EAS
IAR
EAR
dv/dt
TJ , Tstg
TL
RqJC
RqJ–PCB
Notes
1)
2)
2)
3)
4)
±20V
10A
6A
40A
125W
1.0W/°C
650mJ
10A
12.5mJ
4.0V/ns
–55 to 150°C
300°C
1.0°C/W
TBD
Repetitive Rating – Pulse width limited by maximum junction temperature.
@ VDD = 50V,Starting TJ = 25°C, EAS =[0.5 * L* (IL2) * [BVDSS/(BVDSS-VDD)], Peak IL = 10A VGS = 10V,
25 £ RG £ 200W
ISD £ 10A , di/dt £ 120A/ms , VDD £ BVDSS , TJ £ 150°C
Pulse Test: Pulse Width £ 300ms, d £ 2%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 7/00
IRFN340SMD
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise stated)
Parameter
BVDSS
Test Conditions
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
DBVDSS Temperature Coefficient of
DTJ Breakdown Voltage
RDS(on)
VGS = 0
ID = 1mA
Min.
Typ.
Max.
400
Reference to 25°C
V
0.46
ID = 1mA
V / °C
Static Drain – Source On–State
VGS = 10V
ID = 6A
0.55
Resistance4
VGS = 10V
ID = 10A
0.70
VDS = VGS
ID = 250mA
VDS ³ 15V
IDS = 6A
VGS = 0
VGS(th) Gate Threshold Voltage
Transconductance4
2
V
(W)
S(W
VDS = 0.8BVDSS
25
TJ = 125°C
250
mA
4.9
Forward
IDSS
Zero Gate Voltage Drain Current
IGSS
Forward Gate – Source Leakage
VGS = 20V
100
IGSS
Reverse Gate – Source Leakage
VGS = –20V
–100
Ciss
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 0
1400
Coss
Output Capacitance
VDS = 25V
3500
Crss
Reverse Transfer Capacitance
f = 1MHz
2300
Qg
Total Gate Charge 1
Qgs
Gate – Source Charge 1
Qgd
Gate – Drain (“Miller”) Charge 1
td(on)
Turn–On Delay Time
tr
Rise Time
VDD = 200V
ID = 10A
92
td(off)
Turn–Off Delay Time
RG = 9.1W
VGS = 10V
79
tf
Fall Time
IS
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
ID = 10A
VDS = 0.5BVDSS
nA
pF
32
65
2.2
10.0
13.8
40.5
nC
2.5
ns
58
10
1
ISM
Pulse Source Current
VSD
Diode Forward Voltage4
trr
Reverse Recovery Time4
Charge4
A
40
IS = 10A
TJ = 25°C
VGS = 0
IF = 10A
TJ = 25°C
di / dt £ 100A/ms VDD £ 50V
Qrr
Reverse Recovery
ton
Forward Turn–On Time
LD
PACKAGE CHARACTERISTICS
Internal Drain Inductance (from centre of drain pad to die)
2.0
LS
Internal Source Inductance (from centre of source pad to end of source bond wire)
6.5
Semelab plc.
W
4
gfs
VGS = 10V
Unit
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
1.5
V
600
ns
5.6
mC
Negligible
nH
Prelim. 7/00
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