MCH3382 Power MOSFET –12V, 198mΩ, –2A, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 1.2V drive • Pb-Free, Halogen Free and RoHS compliance www.onsemi.com VDSS RDS(on) Max 198mΩ@ −4.5V 297mΩ@ −2.5V −12V −2A 429mΩ@ −1.8V Typical Applications • Load Switch 1040mΩ@ −1.2V ELECTRICAL CONNECTION P-Channel SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2) Parameter Symbol Value Unit Drain to Source Voltage VDSS −12 V Gate to Source Voltage VGSS ID ±9 V −2 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP −8 A Power Dissipation When mounted on ceramic substrate 2 (900mm × 0.8mm) PD 0.8 W Junction Temperature Tj 150 °C Drain Current (DC) ID Max 1 1 : Gate 2 : Source 3 : Drain 2 PACKING TYPE : TL MARKING QP LOT No. LOT No. Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : This product is designed to “ESD immunity<200V*”, so please take care when handling. *Machine Model 3 TL THERMAL RESISTANCE RATINGS Parameter Junction to Ambient When mounted on ceramic substrate 2 (900mm × 0.8mm) Symbol RθJA © Semiconductor Components Industries, LLC, 2015 September 2015 - Rev. 1 Value 156.2 1 Unit °C/W ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Publication Order Number : MCH3382/D MCH3382 ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 3) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS VGS(th) gFS Gate Threshold Voltage Forward Transconductance Static Drain to Source On-State Resistance Conditions Value min ID=−1mA, VGS=0V VDS=−12V, VGS=0V VGS=±7.2V, VDS=0V −12 VDS=−6V, ID=−1mA −0.3 VDS=−6V, ID=−1A typ max Unit V −10 μA ±10 μA −0.9 V 3 S RDS(on)1 RDS(on)2 ID=−1A, VGS=−4.5V 152 198 mΩ ID=−0.5A, VGS=−2.5V 212 297 mΩ RDS(on)3 RDS(on)4 ID=−0.3A, VGS=−1.8V 286 429 mΩ ID=−0.1A, VGS=−1.2V 520 1040 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 170 pF 50 pF Crss 40 pF Turn-ON Delay Time td(on) 4.8 ns Rise Time tr 11 ns Turn-OFF Delay Time td(off) 23 ns Fall Time tf Qg Total Gate Charge Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd VDS=−6V, f=1MHz See specified Test Circuit VDS=−6V, VGS=−4.5V, ID=−2A 14 ns 2.3 nC 0.40 nC 0.46 nC VSD Forward Diode Voltage IS=−2A, VGS=0V −0.85 −1.2 V Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 0V --4.5V VDD= --6V VIN ID= --1A RL=6Ω VIN D PW=10μs D.C.≤1% VOUT G P.G 50Ω MCH3382 S www.onsemi.com 2 MCH3382 www.onsemi.com 3 MCH3382 www.onsemi.com 4 MCH3382 PACKAGE DIMENSIONS unit : mm SC-70FL / MCPH3 CASE 419AQ ISSUE O Recommended Soldering Footprint 0.6 0.4 1 : Gate 2 : Source 2.1 3 : Drain 0.65 0.65 ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) QP SC-70FL / MCPH3 (Pb-Free / Halogen Free) 3,000 / Tape & Reel MCH3382-TL-H MCH3382-TL-W † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the MCH3382 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. 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