SMD Silicon Phototransistor OP520, OP521 OP520, OP521 • • • • High Photo Sensitivity Fast Response Time 1206 Package Size Opaque or Water Clear Flat Lens Description: The OP520 and OP521 are NPN silicon phototransistor mounted in miniature SMT packages. Both the OP520 and OP521 have a flat lens however, the OP520 lens is opaque to shield the device from stray light. These sensors are packaged in 1206 size chip carriers that are compatible with most automated mounting equipment. The OP520 and OP521 are mechanically and spectrally matched to the OP250 series infrared LEDs. Applications • • • • Non-Contact Position Sensing Datum detection Machine automation Optical encoders PIN FUNCTION 1 Collector 2 Emitter RECOMMENDED SOLDER PADS [4.60±0.10] .181±.0039 [1.50±0.10] .059±.0039 [1.60±0.10] .063±.0039 [1.60±0.10] .063±.0039 RoHS OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 [email protected] www.optekinc.com Issue 1.1 02/07 Page 1 of 3 SMD Silicon Phototransistor OP520, OP521 Absolute Maximum Ratings TA = 25o C unless otherwise noted Storage Temperature Range -40° C to +85° C Operating Temperature Range -25° C to +85° C 260° C(1) Lead Soldering Temperature Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5V Collector Current 20 mA 75 mW(2) Power Dissipation Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. De-rate linearly at 2.17 mW/° C above 25° C. Electrical Characteristics (TA = 25°C unless otherwise noted) SYMBOL PARAMETER IC(ON) On-State Collector Current VCE(SAT) ICEO TYP MAX UNITS 0.25 CONDITIONS mA VCE = 5.0V, Ee = 5.0mW/cm2 (3) Collector-Emitter Saturation Voltage 0.4 V IC = 100µA, Ee = 5.0mW/cm2 (3) Collector-Emitter Dark Current 100 nA VCE = 5.0V, Ee = 0 (4) V(BR)CEO Collector-Emitter Breakdown Voltage 30 V IC = 100µA, Ee = 0 V(BR)ECO Emitter-Collector Breakdown Voltage 5 V IE = 100µA, Ee = 0 µs IC = 1mA, RL = 1KΩ tr, tf Rise and Fall Times 15 Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. (0.04Ta-3.4) where Ta is the ambient temperature in ° C. To Calculate typical collector dark current in µA, use the formula ICEO = 10 4. 160% Relative Collector Current 140% Relative On-State Collector Current vs. Irradiance Relative On-State Collector Current vs. Temperature 140% Normalized at Ee = 5mW/cm2 Conditions: VCE = 5V, λ = 935nm, TA = 25 °C 130% Relative Collector Current 3. MIN 120% 100% 80% 60% 40% 20% 0 Normalized at TA = 25°C . Conditions: VCE = 5V, λ = 935nm, TA = 25 °C 80°C 120% 110% 100% 90% -40°C 80% 70% 1.0 2.0 3.0 4.0 5.0 6.0 2 Ee—Irradiance (mW/cm ) 7.0 8.0 -25 0 25 50 Temperature—(°C) 75 100 SMD Silicon Phototransistor OP520, OP521 Relative Response vs. Angular Position Relative On-State Collector Current vs. Collector-Emitter Voltage 100% IC(ON) - On-State Collector Current (mA) 1.40 Relative Response 80% 60% 40% 20% 6 mW/cm2 1.20 5 mW/cm2 1.00 4 mW/cm2 0.80 3 mW/cm2 0.60 2 mW/cm2 0.40 1 mW/cm2 0.20 0% -90 -30 0 30 60 90 0 0.1 0.2 0.3 0.4 0.5 Angular Position (Degrees) Collector-Emitter Voltage (V) Collector-Emitter Dark Current vs. Temperature Relative Response vs. Wavelength 100% Conditions: Ee = 0 mW/cm2 VCE = 10V 80% 100 Relative Response Collector-Emitter Dark Current (nA) 1000 -60 10 60% 40% OP521 OP520 1 20% 0 -25 0% 0 25 50 Temperature—(°C) 75 100 400 500 600 700 800 900 Wavelength (nm) 1000 1100