Pb Free Plating Product ISSUED DATE :2006/07/19 REVISED DATE :2006/11/09B GTT8205S BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 20V 28m 6A Description The GTT8205S provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The TSSOP-6 package is universally used for all commercial-industrial surface mount applications. Features * Low on-resistance *Capable of 2.5V gate drive *Low drive current Package Dimensions REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Ratings Unit VDS 20 V VGS ±8 V 3 ID @TA=25 6 A 3 ID @TA=70 4.8 A 20 A 1.14 W Continuous Drain Current , [email protected] Continuous Drain Current , [email protected] Pulsed Drain Current Symbol 1 IDM Total Power Dissipation PD @TA=25 Linear Derating Factor 0.01 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Symbol Value Rthj-a 110 W/ Thermal Data Parameter Thermal Resistance Junction-ambient GTT8205S 3 Max. Unit /W Page: 1/4 ISSUED DATE :2006/07/19 REVISED DATE :2006/11/09B Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 20 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.03 - Gate Threshold Voltage VGS(th) 0.5 - 1.5 V VDS=VGS, ID=250uA gfs - 20 - S VDS=10V, ID=6A IGSS - - ±100 nA VGS= ±8V - - 1 uA VDS=20V, VGS=0 - - 25 uA VDS=16V, VGS=0 - - 28 - - 38 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance2 IDSS RDS(ON) V/ m Total Gate Charge2 Qg - 23 - Gate-Source Charge Qgs - 4.5 - Gate-Drain (“Miller”) Change Qgd - 7 - Td(on) - 30 - Tr - 70 - Td(off) - 40 - Tf - 65 - Input Capacitance Ciss - 1035 - Output Capacitance Coss - 320 - Reverse Transfer Capacitance Crss - 150 - Symbol Min. Typ. Max. Unit VSD - - 1.2 V Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VGS=4.5V, ID=6.0A VGS=2.5V, ID=5.2A nC ID=6A VDS=20V VGS=5V ns VDS=10V ID=1A VGS=5V RG=6 RD=10 pF VGS=0V VDS=20V f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage Test Conditions IS=1.7A, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board, t 5sec; 180 /W when mounted on Min. copper pad. GTT8205S Page: 2/4 ISSUED DATE :2006/07/19 REVISED DATE :2006/11/09B Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. RDSON v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature GTT8205S Page: 3/4 ISSUED DATE :2006/07/19 REVISED DATE :2006/11/09B Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 180 Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform /W Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GTT8205S Page: 4/4