ETL GTT8205S N-channel enhancement mode power mosfet Datasheet

Pb Free Plating Product
ISSUED DATE :2006/07/19
REVISED DATE :2006/11/09B
GTT8205S
BVDSS
RDS(ON)
ID
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
20V
28m
6A
Description
The GTT8205S provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
The TSSOP-6 package is universally used for all commercial-industrial surface mount applications.
Features
* Low on-resistance
*Capable of 2.5V gate drive
*Low drive current
Package Dimensions
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min.
Max.
1.10 MAX.
0
0.10
0.70
1.00
0.12 REF.
2.70
3.10
2.60
3.00
1.40
1.80
REF.
L
L1
b
e
e1
Millimeter
Min.
Max.
0.45 REF.
0.60 REF.
0°
10°
0.30
0.50
0.95 REF.
1.90 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
Unit
VDS
20
V
VGS
±8
V
3
ID @TA=25
6
A
3
ID @TA=70
4.8
A
20
A
1.14
W
Continuous Drain Current , [email protected]
Continuous Drain Current , [email protected]
Pulsed Drain Current
Symbol
1
IDM
Total Power Dissipation
PD @TA=25
Linear Derating Factor
0.01
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Symbol
Value
Rthj-a
110
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
GTT8205S
3
Max.
Unit
/W
Page: 1/4
ISSUED DATE :2006/07/19
REVISED DATE :2006/11/09B
Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
0.03
-
Gate Threshold Voltage
VGS(th)
0.5
-
1.5
V
VDS=VGS, ID=250uA
gfs
-
20
-
S
VDS=10V, ID=6A
IGSS
-
-
±100
nA
VGS= ±8V
-
-
1
uA
VDS=20V, VGS=0
-
-
25
uA
VDS=16V, VGS=0
-
-
28
-
-
38
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance2
IDSS
RDS(ON)
V/
m
Total Gate Charge2
Qg
-
23
-
Gate-Source Charge
Qgs
-
4.5
-
Gate-Drain (“Miller”) Change
Qgd
-
7
-
Td(on)
-
30
-
Tr
-
70
-
Td(off)
-
40
-
Tf
-
65
-
Input Capacitance
Ciss
-
1035
-
Output Capacitance
Coss
-
320
-
Reverse Transfer Capacitance
Crss
-
150
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.2
V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS=0, ID=250uA
Reference to 25 , ID=1mA
VGS=4.5V, ID=6.0A
VGS=2.5V, ID=5.2A
nC
ID=6A
VDS=20V
VGS=5V
ns
VDS=10V
ID=1A
VGS=5V
RG=6
RD=10
pF
VGS=0V
VDS=20V
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
Test Conditions
IS=1.7A, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, t 5sec; 180 /W when mounted on Min. copper pad.
GTT8205S
Page: 2/4
ISSUED DATE :2006/07/19
REVISED DATE :2006/11/09B
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. RDSON v.s. Junction Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
GTT8205S
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ISSUED DATE :2006/07/19
REVISED DATE :2006/11/09B
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
180
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
/W
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GTT8205S
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