MITSUBISHI Nch POWER MOSFET FS30SM-6 HIGH-SPEED SWITCHING USE FS30SM-6 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS ................................................................................ 300V ¡rDS (ON) (MAX) .............................................................. 0.17Ω ¡ID .......................................................................................... 30A e TO-3P APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter VDSS VGSS Drain-source voltage Gate-source voltage ID IDM PD Drain current Drain current (Pulsed) Maximum power dissipation Tch Tstg — Channel temperature Storage temperature Weight Conditions VGS = 0V VDS = 0V Typical value Ratings Unit 300 ±30 V V 30 90 250 A A W –55 ~ +150 –55 ~ +150 4.8 °C °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FS30SM-6 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 300V, VGS = 0V Gate-source threshold voltage Drain-source on-state resistance ID = 1mA, VDS = 10V ID = 15A, VGS = 10V ID = 15A, VGS = 10V ID = 15A, VDS = 10V V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) Limits Test conditions VDS = 25V, VGS = 0V, f = 1MHz Typ. Max. 300 ±30 — — — — — — ±10 V V µA — 2 — — — 3 0.13 1.95 1 4 0.17 2.55 mA V Ω V 10.0 — — — 15.0 2100 420 90 — — — — S pF pF pF — — — — 35 85 240 100 — — — — ns ns ns ns — 1.5 2.0 V — — 0.50 °C/W VDD = 150V, ID = 15A, VGS = 10V, RGEN = RGS = 50Ω Turn-off delay time Fall time Source-drain voltage IS = 15A, VGS = 0V Channel to case Thermal resistance Unit Min. PERFORMANCE CURVES 200 150 100 50 0 MAXIMUM SAFE OPERATING AREA 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 250 0 50 100 150 200 102 7 5 3 2 tw=10µs 100µs 101 7 5 3 2 100 7 5 3 1ms 10ms TC = 25°C Single Pulse 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (°C) 40 OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10V 6V 20 PD = 250W 5.5V DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V TC = 25°C 7V Pulse Test 50 PD = 250W 6V 30 DC 20 5V 10 16 5V 12 8 4.5V 4 TC = 25°C Pulse Test 4V 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS30SM-6 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.20 ID = 60A 8 45A 6 30A 4 15A 2 TC = 25°C Pulse Test 0 0 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 10 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 16 8 4 8 12 16 TC = 25°C 101 7 5 125°C 75°C 3 2 2 3 5 7 101 2 3 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 Ciss 103 7 5 Coss Crss 3 Tch = 25°C 2 f = 1MHz VGS = 0V 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) VDS = 10V Pulse Test 3 2 100 0 10 20 5 102 7 5 0.04 TRANSFER CHARACTERISTICS (TYPICAL) 24 3 2 0.08 DRAIN CURRENT ID (A) 32 3 2 20V 0.12 GATE-SOURCE VOLTAGE VGS (V) TC = 25°C VDS = 50V Pulse Test 0 VGS = 10V 0.16 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 40 0 TC = 25°C Pulse Test td(off) 3 2 tf 102 7 5 tr 3 2 101 100 Tch = 25°C VDD = 150V VGS = 10V RGEN = RGS = 50Ω td(on) 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS30SM-6 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) VGS = 50V 12 100V 8 200V 4 101 7 5 0 20 40 60 80 25°C 30 75°C 20 10 0 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 100 7 5 3 2 –50 0 50 100 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 CHANNEL TEMPERATURE Tch (°C) 0.4 40 GATE CHARGE Qg (nC) 3 2 10–1 VGS = 0V Pulse Test TC=125°C 0 100 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) SOURCE CURRENT IS (A) 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) 50 Tch = 25°C ID = 30A –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 D=1 5 3 0.5 2 0.2 –1 10 0.1 7 5 3 2 PDM tw T 0.05 D= tw 0.02 T 0.01 Single Pulse 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999