ADVANCE INFORMATION SiC JFET ASJE1200R063 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: Die Inside RDS(ON)max 0.063 V : ETS,typ 440 μJ • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening: - MIL-PRF-19500 Equivalent - Space Level - MIL-STD-750 Methods & Conditions • Inherent Radiation Tolerance >100K TID • Positive Temperature Coefficient for Ease of Paralleling • Compatible with Standard Gate Driver ICs • Temperature Independent Switching Behavior 4 • Extremely Fast Switching • 1200 Volt Drain-Source Blocking Voltage • RDS(on)max of 0.063 • Voltage Controlled • Low Gate Charge • Low Intrinsic Capacitance APPLICATIONS: ProductSummary 1200 D (2,4) G (1) TO-258 S (3) • Satellite Solar Inverters • Mil Spec Power Supplies - Switch Mode - Uninterrupted • Jet Engine Electronics • Down-hole Electronics (Motor / Compressor Control) 123 Internal Schematic Non-isolated tab version shown. For isolated tab version, tab (4) is No Connect. MAXIMUM RATINGS Parameter Symbol ID,Tj=125 Conditions Tj=125°C Value 30 ID,Tj=175 Tj=175°C 20 PulsedDrainCurrent(1) ShortCircuitWithstandTime IDM Tc=25°C 60 A tSC VDD<800V,TC<125°C 50 μS PowerDissipation PD Tc=25°C 250 W GateͲSourceVoltage VGS Ͳ15to+3 V ContinuousDrainCurrent OperatingandStorageTemperature LeadTemperatureforSoldering Static AC (2) A Ͳ15to+15 Tj,Tj,stg Tsold Unit 1/8"fromcase<10s V Ͳ55to+200* o 260 o C C (1)Limitedbypulsewidth (2)RgEXT=0.5ohm,tp<200ns *Contactfactoryfor260oC THERMAL CHARACTERISTICS Value Parameter ThermalResistance,junctionͲtoͲcase ThermalResistance,junctionͲtoͲambient ASJE1200R063 Rev. 0.1 06/11 Symbol Rth,JC Typ Ͳ Max TBD Rth,JA Ͳ TBD Unit °C/W For more products and information, please visit our website at www.micross.com Micross Components reserves the right to change products or specifications without notice. 1 ADVANCE INFORMATION SiC JFET ASJE1200R063 ELECTRICAL CHARACTERISTICS Parameter Symbol Conditions Min Value Typ Max Unit OffCharacteristics DrainͲSourceBlockingVoltage TotalDrainLeakageCurrent TotalGateReverseLeakage BVDS IDSS IGSS VGS=0V,ID=600ʅA 1200 Ͳ Ͳ VDS=1200V,VGS=0V,Tj=25oC Ͳ 200 1200 VDS=1200V,VGS=0V,Tj=175oC VDS=1200V,VGS=Ͳ15V, Ͳ 600 2000 Ͳ 2 Ͳ Tj=25oC VDS=1200V,VGS=Ͳ15V, V μA Tj=175oC VGS=Ͳ15V,VDS=0V Ͳ 20 Ͳ Ͳ Ͳ0.2 Ͳ0.6 VGS=Ͳ15V,VDS=1200V Ͳ Ͳ0.2 Ͳ Ͳ 0.045 0.063 Ͳ 0.11 1.15 1.4 Ͳ 1.75 V Ͳ mA mA OnCharacteristics GateThresholdVoltage VGS(th) ID=12A,VGS=3V, Tj=25°C ID=12A,VGS=3V, Tj=125°C VDS=1V,ID=34mA GateForwardCurrent IGFWD VGS=3V Ͳ 400 RG f=1MHz,drainͲsourceshorted Ͳ 4 Ͳ : RG(on) VGS>2.7V;SeeFigure5 Ͳ 0.25 Ͳ : Ͳ 1220 Ͳ Ͳ 180 Ͳ Ͳ 169 Ͳ Ͳ 100 Ͳ Ͳ 15 Ͳ Ͳ 12 Ͳ Ͳ 35 Ͳ Ͳ 30 Ͳ Ͳ 160 Ͳ Ͳ 280 Ͳ DrainͲSourceOnͲresistance GateResistance RDS(on) DynamicCharacteristics InputCapacitance Ciss OutputCapacitance Coss ReverseTransferCapacitance Crss EffectiveOutputCapacitance, energyrelated Co(er) SwitchingCharacteristics TurnͲOnDelay ton RiseTime tr TurnͲOffDelay toff FallTime tf TurnͲOnEnergy Eon TurnͲOffEnergy Eoff VDD=100V VDS=0Vto480V, VGS=0V VDS=600V,ID=24A, InductiveLoad,TJ=25oC GateDriver=+15V,Ͳ10V, RgEXT=2.5ohm SeeFigure15fortypicalgatedrive/ inductiveloadswitchingcircuit. : TotalSwitchingEnergy Ets Ͳ 440 Ͳ TurnͲOnDelay ton Ͳ 15 Ͳ RiseTime tr Ͳ 15 Ͳ TurnͲOffDelay toff Ͳ 35 Ͳ FallTime tf Ͳ 30 Ͳ Ͳ 180 Ͳ Ͳ 280 Ͳ Ͳ 460 Ͳ Ͳ 60 Ͳ Ͳ 2 Ͳ Ͳ 49 Ͳ TurnͲOnEnergy Eon TurnͲOffEnergy Eoff TotalSwitchingEnergy Ets TotalGateCharge Qg GateͲSourceCharge Qgs GateͲDrainCharge Qgd ASJE1200R063 Rev. 0.1 06/11 VDS=600V,ID=24A, InductiveLoad,TJ=150oC GateDriver=+15V,Ͳ10V, RgEXT=2.5ohm SeeFigure15fortypicalgatedrive/ inductiveloadswitchingcircuit. VDS=600V,ID=10A, VGS=+2.5V pF ns μJ ns μJ nC Micross Components reserves the right to change products or specifications without notice. 2 ADVANCE INFORMATION SiC JFET ASJE1200R063 Figure 1. Typical Output Characteristics ID = f(VDS); Tj = 25 °C; parameter: VGS Figure 2. Typical Output Characteristics ID = f(VDS); Tj = 125 °C; parameter: VGS 40 ID, Drain-Source Current (A) ID, Drain-Source Current (A) 80 70 3.0 V 60 2.5 V 50 40 30 2.0 V 20 10 1.5 V 2 4 VDS, Drain-Source Voltage (V) 2.5 V 25 20 2.0 V 15 10 1.5 V 5 0 6 2 6 Figure 4. Typical Transfer Characteristics ID = f(VGS); VDS = 5V 24 60 ID, Drain-Source Current (A) 3.0 V 21 2.5 V 18 15 2.0 V 12 9 6 1.5 V 3 0 0 1 2 3 4 5 50 40 30 20 10 0 0.00 6 0.50 VDS, Drain-Source Voltage (V) 0.60 RDS(on), Drain-Source On-resistance 0.80 o 175 C 25oC 175oC 2 3 4 5 6 0.40 25oC 0.20 0.00 2.00 2.50 3.00 0.35 0.30 150oC 0.25 0.20 125oC 0.15 0.10 25oC 0.05 0.00 1.5 2.0 2.5 3.0 0 VGS, Gate-Source Voltage (V) ASJE1200R063 Rev. 0.1 06/11 1.50 Figure 6. Drain-Source On-resistance RDS(on) = f(ID); VGS = 3.0; parameter: Tj 1.00 12 10 8 6 4 2 0 1.00 VGS, Gate-Source Voltage (V) Figure 5. Gate-Source Current IGS = f(VGS); parameter: Tj IGS, Gate-Source Current (A) 4 VDS, Drain-Source Voltage (V) Figure 3. Typical Output Characteristics ID = f(VDS); Tj = 175°C; parameter: VGS ID, Drain-Source Current (A) 3.0 V 30 0 0 0 35 10 20 30 40 ID, Drain Current (A) Micross Components reserves the right to change products or specifications without notice. 3 ADVANCE INFORMATION SiC JFET ASJE1200R063 Figure 7. Drain-Source On-resistance RDS(ON) = f(Tj); parameter: IGS Figure 8. Drain-Source On-resistance RDS(ON) = f(IGS); Tj = 25oC RDS(on), Drain-Source On-resistance (ȍ) RDS(on), Drain-Source On-resistance (ȍ) 0.16 0.14 200mA 1000mA 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 50 100 150 0.052 0.051 0.050 0.049 0.048 0.047 0.046 0.045 0.044 0.043 0.042 0.1 200 Figure 9. Typical Capacitance C = f(VDS); VGS = 0 V; f = 1 MHz 100.0 1000.0 3.0 VGS, Gate-Source Voltage (V) C, Capacitance (pF) 10.0 Figure 10. Gate Charge Qg = f(VGS); VDS = 600V; ID = 5A, Tj = 25oC 1.E+04 Ciss 1.E+03 1.E+02 Coss Crss 1.E+01 2.5 2.0 1.5 1.0 0.5 0.0 0 300 600 900 1200 0 15 30 VDS, Drain-Source Voltage (V) 1E-03 175oC 1.00 Typical ID, Drain Leakage Current (A) -1.5mV/oC Max 60 Figure 12. Drain-Source Leakage ID = f(VDS); VGS = 0V; parameter: Tj 1.50 1.25 45 Qg, Total Gate Charge (nC) Figure 11. Gate Threshold Voltage Vth = f(Tj) VTH, Gate Threshold Voltage (V) 1.0 IGS, Gate-Source Current (mA) Tj, Junction Temperature (°C) 0.75 1E-04 1E-05 125oC 1E-06 1E-07 25oC 1E-08 0.50 0 50 100 150 1E-09 200 0 Tj, Junction Temperature (oC) ASJE1200R063 Rev. 0.1 06/11 300 600 900 1200 BVDS, Drain-Source Blocking Voltage (V) Micross Components reserves the right to change products or specifications without notice. 4 ADVANCE INFORMATION SiC JFET ASJE1200R063 Figure 13. Switching Energy Losses Figure 14. Switching Energy Losses Es = f(ID); VDS = 600V; VGD = +15V/-10V, RGEXT = 2.5ohm ES = f(RGEXT); VDS = 600V; ID = 24A, VGD = +15V/-10V 1000 Tj = 25oC Tj = 150oC 600 Tj = 25oC Tj = 150oC 900 ETS E, Switching Energy (uJ) E, Switching Energy (uJ) 700 500 400 EOFF 300 EON 200 100 800 ETS 700 600 EOFF 500 400 EON 300 200 100 0 0 0 6 12 18 24 30 0 36 ID, Drain Current (A) 3 6 9 12 RgEXT, External Gate Resistance, (ȍ) Figure 15. Inductive Load Switching Circuit ASJE1200R063 Rev. 0.1 06/11 Micross Components reserves the right to change products or specifications without notice. 5 ADVANCE INFORMATION SiC JFET ASJE1200R063 MECHANICAL DRAWING $IA "3# "3# 4YP NOTE: 1. Dimensions in mm (inches) 2. Controlling dimensions (inches) ORDERING INFORMATION BasePartNumber ASJE1200R063 Configuration Blank=NonͲisolatedTab S=IsolatedTab Package JunctionTemp.Range M=TOͲ258 Ͳ EL EX TempRanges: EL=ElevatedTemp.Range,Ͳ55oCto200oC(TJ) Processing Blank /V /S EX=ExtremeTemp.Range,Ͳ55oCto260oC(TJ)(Consultfactory) Processing: ExamplePartNumbers: Blank=Commercial/StandardProcessing MILͲPRFͲ19500EquivalentScreeningAvailableperSCD /V=JANTXMILͲPRFͲ19500Equivalent(futurestandardoffering) /S=JANSMILͲPRFͲ19500Equivalent(futurestandardoffering) ASJE1200R063MͲEL ASJE1200R063SMͲEX has commercial plastic versions of this product available. Please refer to the SemiSouth website http://www.semisouth.com/products/products.html for datasheet specifications and ordering information. The SemiSouth part number is SJEP120R063 and is supplied in a TO-247 plastic package. ASJE1200R063 Rev. 0.1 06/11 Micross Components reserves the right to change products or specifications without notice. 6 ADVANCE INFORMATION SiC JFET ASJE1200R063 DOCUMENT TITLE Normally-OFF Trench Silicon Carbide Power JFET Rev # 0.0 History Initial Release Release Date December 2010 Status Advance Information 0.1 Replaced TO-257 package with TO-258 package June 2011 Advance Information ASJE1200R063 Rev. 0.1 06/11 Micross Components reserves the right to change products or specifications without notice. 7