NTE NTE2987 Logic level mosfet n-channel, enhancement mode high speed switch Datasheet

NTE2987
Logic Level MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Avalanche Rugged Technology
D Logic Level Gate Drive
D RDS(on) = 0.09Ω Typ. at VGS = 5V
D +175°C Operating Temperature
D Fast Switching
D Low Gate Charge
D High Current Capability
Absolute Maximum Ratings:
Drain Current, ID
Continuous
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7W/°C
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
Avalanche Current, Repetitive or Non–Repetitive (Note 2), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mJ
Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mJ
Avalanche Current, Repetitive or Non–Repetitive (Note 4), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A
Drain–Source Voltage (VGS = 0), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Drain–Gate Voltage (RGS = 20kΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . +300°C
Thermal Resistance:
Maximum Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43°C/W
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), RthCS . . . . . . 0.5°C/W
Maximum Junction–to–Ambient (Free Air Operation), RthJA . . . . . . . . . . . . . . . . . . . 62.5°C/W
Note
Note
Note
Note
1.
2.
3.
4.
Pulse width limited by safe operating area.
Pulse width limited by TJ max, Duty Cycle < 1%.
VDD = 25V, ID = IAR, Starting TJ = +175°C.
TC = +100°C, Pulse width limited by TJ max, Duty Cycle < 1%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF
Drain–Source Breakdown Voltage
Drain–to–Source Leakage Current
BVDSS
VGS = 0v, ID = 250µA
100
–
–
V
IDSS
VDS = 100V, VGS = 0
–
–
1
µA
VDS = 80V, VGS = 0V, , TC = +150°C
–
–
10
µA
Gate–Source Leakage Forward
IGSS
VGS = 15V
–
–
100
nA
Gate–Source Leakage Reverse
IGSS
VGS = –15V
–
–
–100
nA
1.0
1.6
2.5
V
–
0.09
0.12
Ω
VDS > ID(on) x RDS(on)max, VGS = 10V
20
–
–
A
16
–
mhos
ON (Note 5)
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
Static Drain–Source ON Resistance
RDS(on)
VGS = 5V, ID = 10A
On–State Drain Current
ID(on)
Dynamic
Forward Transconductance
gfs
VDS > ID(on) x RDS(on)max, ID = 10A,
Note 5
10
Input Capacitance
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
–
1200 1500
pF
Output Capacitance
Coss
–
250
350
pF
Reverse Transfer Capacitance
Crss
–
60
90
pF
–
22
30
nC
Switching
Total Gate Charge
Qg
Gate–Source Charge
Qgs
–
6
–
nC
Gate–Drain (“Miller”) Charge
Qgd
–
12
–
nC
Turn–On Delay Time
td(on)
VDD = 30V, ID = 10A, RG = 50Ω,
VGS = 5V
–
50
70
ns
–
140
200
ns
VDD = 80V, ID = 20A, RG = 50Ω,
VGS = 5V
–
80
110
ns
–
80
110
ns
(Body Diode)
–
–
20
A
Rise Time
Turn–Off Delay Time
Fall Time
tr
td(off)
tf
VGS = 5V, ID = 20A, VDD = 80V
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
IS
Pulse Source Current
ISM
(Body Diode) Note 1
–
–
80
A
Diode Forward Voltage
VSD
ISD = 20A, VGS = 0V, Note 5
–
–
1.5
V
Reverse Recovery Time
trr
–
130
–
ns
Reverse Recovery Charge
Qrr
TJ = +150°C, VDD = 50V, ISD = 20A,
di/dt = 100A/µs
µ
–
0.4
–
µC
Reverse Recovery Current
IRRM
–
6
–
A
Note 1. Pulse width limited by safe operating area.
Note 5. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1.5%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Gate
.100 (2.54)
Source
Drain/Tab