Spec. No. : C586E3 Issued Date : 2011.04.18 Revised Date : Page No. : 1/9 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN10N40E3 BVDSS : 400V RDS(ON) : 0.47Ω(typ.) ID : 10A Description The MTN10N40E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Applications • Switching Mode Power Supply Symbol Outline MTN10N40E3 G：Gate D：Drain S：Source MTN10N40E3 TO-220 G D S CYStek Product Specification Spec. No. : C586E3 Issued Date : 2011.04.18 Revised Date : Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 2) Single Pulse Avalanche Energy (Note 3) Avalanche Current (Note 2) Repetitive Avalanche Energy (Note 2) Peak Diode Recovery dv/dt (Note 4) Maximum Temperature for Soldering @ Lead at 0.125in(3.175mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor above 25℃ Operating Junction and Storage Temperature VDS VGS ID ID IDM EAS IAR EAR dv/dt 400 ±30 10* 6* 40* 457 10 12.5 4.5 V V A A A mJ A mJ V/ns TL 300 °C 125 1 -55~+150 W W/°C °C PD Tj, Tstg *Drain current limited by maximum junction temperature Note : 1. TJ=+25℃ to +150℃. 2. Repetitive rating; pulse width limited by maximum junction temperature. 3. ISD=10A, dI/dt<100A/μs, VDD<BVDSS, TJ=+150℃. 4. IAS=10A, VDD=50V, L=8mH, RG=25Ω, starting TJ=+25℃. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max MTN10N40E3 Symbol Rth,j-c Rth,j-a Value 1 62.5 Unit °C/W °C/W CYStek Product Specification CYStech Electronics Corp. Spec. No. : C586E3 Issued Date : 2011.04.18 Revised Date : Page No. : 3/9 Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS Min. Typ. Max. Unit Test Conditions 400 2.0 - 0.4 7 0.47 4.0 ±100 1 25 0.55 V V/°C V S nA Ω VGS=0, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =15V, ID=5A VGS=±30 VDS =400V, VGS =0 VDS =320V, VGS =0, Tj=125°C VGS =10V, ID=6A 32 9 12 14 30 31 26 1400 117 25 - nC ID=10A, VDD=320V, VGS=10V ns VDD=200V, ID=10A, VGS=10V, RG=9.1Ω pF VGS=0V, VDS=25V, f=1MHz 360 3.2 10 40 1.5 - *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *IS *ISM *VSD *trr *Qrr - μA A V ns μC IS=10A, VGS=0V VGS=0, IF=10A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN10N40E3 MTN10N40E3 Package TO-220 (RoHS compliant) Shipping Marking 50 pcs/tube, 20 tubes/box, 4 boxes / carton 10N40 CYStek Product Specification Spec. No. : C586E3 Issued Date : 2011.04.18 Revised Date : Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics Static Drain-Source On-resistance vs Ambient Temperature Typical Output Characteristics Drain Current - I D(A) 15V 10V 8V 7V 15 Static Drain-Source On-state Resistance-RDS(on) (Ω) 1 20 6V 10 5.5V 5 0.8 0.6 0.4 0.2 5V ID=6A, VGS=10V VGS=4.5V 0 0 10 20 30 Drain-Source Voltage -VDS(V) 0 -100 40 -50 0 50 100 Ambient Temperature-Ta(°C) 150 Drain Current vs Gate-Source Voltage Static Drain-Source On-State resistance vs Drain Current 20 0.8 Drain Current-I D(on)(A) Static Drain-Source On-State Resistance-R DS(on)(Ω) Ta=25°C VGS=10V 0.6 0.4 15 VDS=10V 10 5 0 0.2 0.1 1 10 Drain Current-I D(A) 0 100 3 100 Reverse Drain Current-I DR (A) Static Drain-Source On-State Resistance-R DS(ON)(Ω) Ta=25°C ID=6A 2.5 2 1.5 1 0.5 15 Body Diode Forward Voltage Variation vs Source Current and Temperature Static Drain-Source On-State Resistance vs Gate-Source Voltage 3 6 9 12 Gate-Source Voltage-VGS(V) VGS=0V 10 1 Ta=150°C 0.1 Ta=25°C 0.01 0.001 0 4 MTN10N40E3 6 8 10 Gate-Source Voltage-VGS (V) 12 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Source Drain Voltage -VSD(V) CYStek Product Specification Spec. No. : C586E3 Issued Date : 2011.04.18 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Brekdown Voltage vs Ambient Temperature Capacitance vs Reverse Voltage 10000 550 Drain-Source Breakdown Voltage BVDSS(V) f=1MHz Capacitance-(pF) Ciss 1000 Coss 100 Crss 10 0 5 10 15 20 25 Drain-to-Source Voltage-VDS (V) 500 450 ID=250μA, VGS=0V 400 -100 30 -50 50 100 150 200 Gate Charge Characteristics Maximum Safe Operating Area 12 100 VDS=90V Gate-Source Voltage---VGS(V) 10μs 100μs 1ms 10 Drain Current --- ID(A) 0 Ambient Temperature-Tj(°C) 10ms 100ms 1 DC Operation in this area is limited by RDS(ON) 0.1 Single pulse Tc=25°C; Tj=150°C VDS=200V 8 VDS=320V 6 4 ID=10A 2 0 0.01 1 10 10 100 Drain-Source Voltage -VDS(V) 1000 0 5 10 15 20 25 30 35 40 Total Gate Charge---Qg(nC) Maximum Drain Current vs Case Temperature 10 8 (A) Maximum Drain Current---I D 12 6 4 2 0 25 50 75 100 125 150 175 Case Temperature---TC (°C) MTN10N40E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C586E3 Issued Date : 2011.04.18 Revised Date : Page No. : 6/9 Typical Characteristics(Cont.) Transient Thermal Response Curves 10 ZθJC(t), Thermal Response 1 D=0.5 0.2 0.1 0.1 1.ZθJC(t)=1°C/W max. 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*ZθJC(t) 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) MTN10N40E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C586E3 Issued Date : 2011.04.18 Revised Date : Page No. : 7/9 Test Circuit and Waveforms MTN10N40E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C586E3 Issued Date : 2011.04.18 Revised Date : Page No. : 8/9 Test Circuit and Waveforms(Cont.) MTN10N40E3 CYStek Product Specification Spec. No. : C586E3 Issued Date : 2011.04.18 Revised Date : Page No. : 9/9 CYStech Electronics Corp. TO-220 Dimension A Marking: B D E C K M I 1 3 G CYS 10N40 Device Name H □□□□ 2 3 Date Code N 2 1 4 O P 3-Lead TO-220 Plastic Package CYStek Package Code: E3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain *: Typical Inches Min. Max. 0.2441 0.2598 0.3386 0.3543 0.1732 0.1890 0.0492 0.0571 0.0142 0.0197 0.3858 0.4094 *0.6398 DIM A B C D E G H Millimeters Min. Max. 6.20 6.60 8.60 9.00 4.40 4.80 1.25 1.45 0.36 0.50 9.80 10.40 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0299 0.0394 0.0461 0.0579 *0.1000 0.5217 0.5610 0.5787 0.6024 Millimeters Min. Max. *3.83 0.76 1.00 1.17 1.47 *2.54 13.25 14.25 14.70 15.30 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC ; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN10N40E3 CYStek Product Specification