DATA SHEET PHOTO DIODE NDL5531P Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ 30 µ m InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • Small dark current ID = 5 nA • Small terminal capacitance Ct = 0.35 pF @ 0.9 V(BR)R • High quantum efficiency η = 90 % @ λ = 1 300 nm, M = 1 η = 77 % @ λ = 1 550 nm, M = 1 • High speed response fC = 2.5 G H z @ M = 10 • Detecting area size φ 3 0 µm • Coaxial module with single mode fiber (SM-9/125) • PACKAGE DIMENSIONS in millimeters NDL5531P1 Optical Fiber: SM-9/125 Length: 1 m MIN. Shrunk tube φ 2.0 30.0 MAX. 30.0 MAX. 1 φ 6.0 +0.0 –0.1 φ 2.0 18.0±0.1 2–φ2.5 2 3 1 φ 2.0 12.0±0.1 PIN CONNECTIONS 1 Anode (Negative) 2 Cathode (Positive) 3 Case 12.5 MIN. 12.5 MIN. 3.9±0.5 2 3 φ2.5 4.0±0.3 1 2–φ2.2 7.0±0.3 1.5 2 3 3.0±0.3 φ 0.45 12.5 MIN. 4.0±0.1 φ 6.0 +0.0 –0.1 6.9±0.3 φ 6.0+0.0 –0.1 6.0+0.0 –0.1 φ2.5 14.0±0.1 30.0 MAX. φ 2.5 Shrunk tube 2.5±0.1 0.5±0.1 Shrunk tube 6.9±0.3 NDL5531P2 Optical Fiber: SM-9/125 Length: 1 m MIN. 7.0±0.15 NDL5531P Optical Fiber: SM-9/125 Length: 1 m MIN. 16.0±0.2 3 2 1 The information in this document is subject to change without notice. Document No. P11352EJ2V0DS00 (2nd edition) Date Published July 1996 P Printed in Japan The mark • shows major revised points. © 1996 NDL5531P Series • ORDERING INFORMATION Part Number Available Connector NDL5531P Without Connector NDL5531PC With FC-PC Connector NDL5531PD With SC-PC Connector NDL5531P1 Without Connector NDL5531P1C With FC-PC Connector NDL5531P1D With SC-PC Connector NDL5531P2 Without Connector NDL5531P2C With FC-PC Connector NDL5531P2D With SC-PC Connector Description No Flange Flat Mount Flange Vertical Flange ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise specified) Parameter Symbol Ratings Unit Forward Current IF 10 mA Reverse Current IR 0.5 mA Operating Case Temperature TC −40 to +85 °C Storage Temperature Tstg −40 to +85 °C ELECTRO-OPTICAL CHARACTERISTICS (TC = 25 °C) Parameter Reverse Breakdown Voltage Symbol V(BR)R Conditions ID = 100 µ A MIN. TYP. MAX. Unit 50 70 100 V Temperature Coefficient of Reverse Breakdown Voltage δ Dark Current ID VR = V(BR)R × 0.9 5 25 nA Multiplied Dark Current IDM M = 2 to 10 1 5 nA Terminal Capacitance Ct VR = V(BR)R × 0.9, f = 1 MHz 0.35 0.60 pF Cut-off Frequency fC M = 10 2.5 Quantum Efficiency η λ = 1 300 nm, M = 1 76 90 λ = 1 550 nm, M = 1 65 77 λ = 1 300 nm, M = 1 0.80 0.94 λ = 1 550 nm, M = 1 0.81 0.96 30 40 Responsivity *1 S Multiplication Factor M 0.2 λ = 1 300 nm, Ipo = 1.0 µ A GHz VR = V (@ ID = 1 µ A ) *2 Excess Noise Factor *1 δ = λ = 1 300 nm, 1 550 nm, Ipo = 1.0 µ A F M = 10, f = 35 MHz, B = 1 MHz V(BR)R < 25 °C + ∆T °C > −V(BR)R < 25 °C > ∆T °C ⋅ V(BR)R < 25 °C > X *2 F = M 2 x %/°C 0.7 5 % A/W NDL5531P Series • WAVELENGTH DEPENDENCE OF QUANTUM EFFICIENCY Quantum Efficiency η (%) 100 80 60 40 20 0 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 Responsivity (Relative Value) ∆ S/S (%) TYPICAL CHARACTERISTICS (TC = 25 °C, unless otherwise specified) TEMPERATURE DEPENDENCE OF RESPONSIVITY 10 λ = 1 300 nm 0 –10 –60 –40 Wavelength λ ( µ m) DARK CURRENT and PHOTO CURRENT vs. REVERSE VOLTAGE 10–3 10–6 Dark Current ID (A) –4 10 Iph 10–7 TC = 85 ˚C 10–8 TC = 65 ˚C 10–9 TC = 25 ˚C TC = –20 ˚C 10–10 10–6 0 20 40 60 80 Reverse Voltage VR (V) 100 MULTIPLICATION FACTOR vs. REVERSE VOLTAGE 10–7 103 Multiplication Factor M Dark Current, Photo Current ID, lph (A) DARK CURRENT vs. REVERSE VOLTAGE λ = 1 300 nm Ipo = 1.0 µA 10–5 –20 20 0 40 60 80 100 Case Temperature TC (˚C) 10–8 ID 10–9 10–10 TC = 65 ˚C 102 TC = –20 ˚C TC = 25 ˚C 101 TC = 85 ˚C 100 0 20 40 60 80 Reverse Voltage VR (V) 100 0 20 40 60 80 Reverse Voltage VR (V) 100 3 TERMINAL CAPACITANCE vs. REVERSE VOLTAGE TEMPERATURE DEPENDENCE OF DARK CURRENT vs. MULTIPLIED DARK CURRENT 10–6 λ = 1 300 nm ID @ VR = 0.9 V(BR)R 10–7 IDM 10–8 10–9 10–10 10–11 –60 –40 Terminal Capacitance Ct (pF) Dark Current, Multiplied Dark Current ID, IDM (A) NDL5531P Series 2 1 0.5 0.2 0.1 –20 0 20 40 60 Case Temperature TC (˚C) 80 100 1 CUT-OFF FREQUENCY vs. MULTIPLICATION FACTOR λ = 1 300 nm 1 1 10 Multiplication Factor M 100 EXCESS NOISE FACTOR vs. MULTIPLICATION FACTOR 100 Excess Noise Factor F 100 3 0 –3 –6 –9 0.1 1 300 nm ( ), 1 550 nm ( ) f = 35 MHz, B = 1 MHz 50 0.5 0.4 20 10 5 2 1 4 50 λ = 1 300 nm RL = 50 Ω M = 10 9 6 G × B = 50 GHz 10 5 10 20 Reverse Voltage VR (V) FREQUENCY RESPONSE Response (dB) Cut-off Frequency fC (GHz) 100 2 1 2 5 10 20 Multiplication Factor M 50 100 0 1.0 2.0 3.0 4.0 Frequency f (GHz) 5.0 NDL5531P Series HANDLING PRECAUTION for PD/APD MODULE The NEC PD/APD module has heat shrink tubing to protect the ferrule edge (*1) and the junction between the ferrule and the module body (*2). In order to avoid breaking the fiber and/or optical coupling degradation, NEC recommends the following handling precautions. 1. Do not make the fiber bend radius less than 30 mm (*3). 2. Do not bend the fiber within the 18 mm section from the module body (*4). 3. Do not stress the ferrule with a lateral force exceeding 500 g (*5). 30 m m fiber in m ) (*3 ferrule (*5) 18 mm min. (*4) (*1) (*2) module body 5 NDL5531P Series • InGaAs APD/PD FAMILY Features Packages TO-18 type Can TO-18 type Can with APD φ 30 µm φ 50 µm (for 2.5 Gb/s) (for 2.5 Gb/s) NDL5530 PIN-PD φ 50 µm φ 80 µm φ 50 µm φ 80 µm Remarks (for 2.5 Gb/s) NDL5500 NDL5510 *3, 4 NDL5490L NDL5490 3 pins NDL5405L 3 pins Micro Lens Small Can NDL5531 *3, 4 φ 5.6 µm Chip on Carrier Receptacle Module NDL5530C NDL5520C NDL5500C NDL5510C NDL5471RC 3 pins NDL5471RD RC: FC receptacle RD: SC receptacle Coaxial Module with MMF *2 NDL5521P NDL5551P NDL5561P NDL5521P1 NDL5551P1 NDL5561P1 NDL5521P2 NDL5551P2 NDL5561P2 NDL5553P *2 *2 NDL5421P NDL5461P P1, P2: With flange NDL5421P1 NDL5461P1 NDL5590P Series: NDL5421P2 NDL5461P2 With Pre-AMP *1 *1 NDL5553P1 *1 NDL5553P2 NDL5590P NDL5590P1 NDL5590P2 Coaxial Module with SMF NDL5531P NDL5553PS *1 NDL5553P1S NDL5531P1 * *5 *5 NDL5481P1 *5 1 NDL5531P2 NDL5481P NDL5481P2 NDL5553P2S * 1 14-pin DIP Module with TEC 6-pin BFY Module NDL5506P NDL5522P ∆T = 45 K (@ IC = 1.1 A) PS: With SMF NDL5422P with MMF *1 For OTDR *2 With GI-62.5/125 *3 Under development *4 Internal pre-amplifier for 1 Gb/s *5 For analog application (optical CATV) Remark Modules are available with FC-PC connector or optional SC-PC connector. 6 NDL5506PS With Pre-AMP NDL5531P Series REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system LEI-1201 Quality grades on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535E Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E 7 NDL5531P Series CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. The export of this product from Japan is prohibited without governmental license. To export or re-export this product from a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales representative. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94. 11