ON NTJD3158C Power mosfet 20 v, 0.63/-0.82 a, sc-88 complementary, esd protected Datasheet

NTJD3158C
Power MOSFET
20 V, +0.63/-0.82 A,
SC-88 Complementary, ESD Protected
Features
•Complementary N- and P-Channel MOSFET
•Small Size Dual SC-88 Package
•Reduced Gate Charge to Improve Switching Response
•Independently Connected Devices to Provide Design Flexibility
•This is a Pb-Free Device
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V(BR)DSS
RDS(on) Max
N-Ch
20 V
375 mW @ 4.5 V
P-Ch
-20 V
300 mW @ -4.5 V
Symbol
Value
Unit
Drain-to-Source Voltage
VDSS
20
V
Gate-to-Source Voltage
VGS
±12
V
ID
0.63
A
N-Channel
Continuous Drain
Current (Note 1)
Steady State
t≤5s
P-Channel
Continuous Drain
Current (Note 1)
Steady State
t≤5s
Power Dissipation
(Note 1)
TA = 25°C
TA = 85°C
0.46
TA = 25°C
0.72
TA = 25°C
-0.59
TA = 25°C
-0.93
t≤5s
N-Ch
P-Ch
TA = 25°C
tp = 10 ms
PD
1
6
D1
N-Ch
G1
2
5
G2
D2
3
4
S2
P-Ch
(Top View)
0.35
IDM
MARKING DIAGRAM &
PIN ASSIGNMENT
A
1.3
D1 G2 S2
-1.6
-55 to
150
°C
Source Current (Body Diode)
IS
0.46
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
THERMAL RESISTANCE RATINGS
Parameter
S1
W
0.27
TJ, Tstg
Operating Junction and Storage Temperature
SC-88 (SOT-363)
(6-Leads)
A
-0.82
TA = 85°C
Steady State
Pulsed Drain
Current
ID
-0.82 A
500 mW @ -2.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
0.63 A
445 mW @ 2.5 V
Applications
•DC-DC Conversion Circuits
•Load/Power Switching with Level Shift
ID Max
Symbol
Max
Unit
Junction-to-Ambient – Steady State (Note 1)
RqJA
460
°C/W
Junction-to-Ambient – t ≤ 5 s (Note 1)
RqJA
357
Junction-to-Lead (Drain) – Steady State (Note 1)
RqJL
226
6
1
TG MG
G
SC-88 (SOT-363)
CASE 419B
STYLE 26
1
S1 G1 D2
TG
M
G
= Specific Device Code
= Date Code
= Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
Device
Package
Shipping†
NTJD3158CT1G
SC-88
(Pb-Free)
3000/Tape & Reel
NTJD3158CT4G
SC-88
(Pb-Free)
10000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
January, 2008 - Rev. 0
1
Publication Order Number:
NTJD3158C/D
NTJD3158C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
N/P
Drain-to-Source
Breakdown Voltage
V(BR)DSS
N
Drain-to-Source Breakdown
Voltage Temperature Coefficient
V(BR)DSS/
TJ
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS (Note 3)
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
VGS = 0 V
P
IDSS
IGSS
ID = 250 mA
20
ID = -250 mA
-20
V
22
mV/°C
N
VGS = 0 V, VDS = 16 V
1.0
P
VGS = 0 V, VDS = -16 V
1.0
N
VDS = 0 V, VGS = ±12 V
±10
P
VDS = 0 V, VGS = ±4.5 V
±1.0
P
VDS = 0 V, VGS = ±12 V
mA
mA
6.0
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Drain-to-Source On Resistance
Forward Transconductance
VGS(TH)
RDS(on)
gFS
N
ID = 250 mA
0.6
P
ID = -250 mA
-0.45
1.5
V
mW
N
VGS = 4.5 V, ID = 0.63 A
290
375
P
VGS = -4.5 V, ID = -0.88 A
255
300
N
VGS = 2.5 V, ID = 0.40 A
360
445
500
P
VGS = -2.5 V, ID = -0.71 A
345
N
VDS = 4.0 V, ID = 0.63 A
2.0
P
VDS = -10 V, ID = -0.88 A
3.0
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
CISS
COSS
N
VDS = 20 V
33
P
VDS = -20 V
155
N
P
Reverse Transfer Capacitance
f = 1 MHz, VGS = 0 V
Gate-to-Source Charge
Gate-to-Drain Charge
13
25
VDS = 20 V
2.8
CRSS
N
QG(TOT)
N
VGS = 4.5 V, VDS = 10 V, ID = 0.63 A
1.3
P
VGS = -4.5 V, VDS = -15 V, ID = -0.88 A
2.2
QGS
N
VGS = 4.5 V, VDS = 10 V, ID = 0.63 A
0.2
P
VGS = -4.5 V, VDS = -15 V, ID = -0.88 A
0.5
P
Total Gate Charge
VDS = 20 V
VDS = -20 V
QGD
VDS = -20 V
46
pF
22
5.0
18
N
VGS = 4.5 V, VDS = 10 V, ID = 0.63 A
0.4
P
VGS = -4.5 V, VDS = -10 V, ID = -0.88 A
0.65
VGS = 4.5 V, VDD = 10 V,
ID = 0.5 A, RG = 20 W
227
3.0
nC
SWITCHING CHARACTERISTICS (Note 3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(ON)
83
N
tr
td(OFF)
tf
td(ON)
ns
786
506
5.8
P
tr
VGS = -4.5 V, VDD = -10 V,
ID = -0.5 A, RG = 20 W
td(OFF)
tf
6.5
13.5
3.5
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
N
P
N
P
VGS = 0 V, TJ = 25°C
VGS = 0 V, TJ = 125°C
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
IS = 0.23 A
0.76
1.1
IS = -0.48 A
-0.8
-1.2
IS = 0.23 A
0.63
IS = -0.48 A
-0.66
V
NTJD3158C
TYPICAL PERFORMANCE CURVES (N-Ch) (TJ = 25°C unless otherwise noted)
1.2
VGS = 4.5 V to 2.2 V
1.2
TJ = 25°C
VDS ≥ 10 V
VGS = 2 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
1.4
1.8 V
1
0.8
1.6 V
0.6
0.4
1.4 V
0.2
1
0.8
0.6
0.4
TJ = 125°C
0.2
25°C
1.2 V
0.7
TJ = -55°C
0
2
4
6
8
10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
0
0.4
0.8
1.2
2
1.6
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
0
0
VGS = 4.5 V
0.6
0.5
TJ = 125°C
0.4
TJ = 25°C
0.3
TJ = -55°C
0.2
0.1
0
0
0.4
1
0.8
0.6
ID, DRAIN CURRENT (AMPS)
0.2
1.2
1.4
0.7
TJ = 125°C
0.5
0.4
TJ = 25°C
0.3
TJ = -55°C
0.2
0.1
0
0
0.2
0.6
0.4
1
0.8
ID, DRAIN CURRENT (AMPS)
1.4
80
ID = 0.63 A
VGS = 4.5 V
and 2.5 V
TJ = 25°C
C, CAPACITANCE (pF)
VGS = 0 V
1.6
1.4
1.2
1
60
40
Ciss
20
Coss
0.8
0.6
-50
1.2
Figure 4. On-Resistance vs. Drain Current and
Temperature
2
RDS(on), DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
VGS = 2.5 V
0.6
Figure 3. On-Resistance vs. Drain Current and
Temperature
1.8
2.4
Crss
0
-25
0
25
50
75
100
125
150
0
5
10
15
TJ, JUNCTION TEMPERATURE (°C)
DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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3
20
NTJD3158C
0.7
5
QG(TOT)
IS, SOURCE CURRENT (AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (N-Ch) (TJ = 25°C unless otherwise noted)
4
VGS
3
QGS
2
QGD
1
ID = 0.63 A
TJ = 25°C
0
0
0.2
0.4
0.6
0.8
1
Qg, TOTAL GATE CHARGE (nC)
1.2
VGS = 0 V
0.6
0.5
0.4
0.3
0.2
TJ = 150°C
0.1
TJ = 25°C
0
1.4
0
0.2
0.4
0.6
0.8
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 7. Gate-to-Source and
Drain-to-Source Voltage vs. Total Charge
Figure 8. Diode Forward Voltage vs. Current
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4
1
NTJD3158C
TYPICAL PERFORMANCE CURVES (P-Ch) (TJ = 25°C unless otherwise noted)
1
1
TJ = 25°C
-2 V
-ID, DRAIN CURRENT (AMPS)
-ID, DRAIN CURRENT (AMPS)
VGS = -4.5, -3.5 & -2.5 V
-1.75 V
0.75
0.5
-1.5 V
0.25
-1.25 V
-1 V
0
0.4
0
0.8
1.6
1.2
VDS ≥ -20 V
0.9
0.8
0.7
0.6
0.5
0.4
125°C
0.3
0.2
25°C
0.1
TJ = -55°C
0
2
0
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 10. Transfer Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
Figure 9. On-Region Characteristics
0.3
VGS = -4.5 V
TJ = 125°C
0.25
0.2
TJ = 25°C
0.15
TJ = -55°C
0.1
0
0.25
0.5
1
0.75
-ID, DRAIN CURRENT (AMPS)
2.5
TJ = 25°C
2.0
VGS = -1.8 V
1.5
1.0
0.5
VGS = -2.5 V
0
0.4
0.6
0.7
0.8
0.9
1
10000
VGS = 0 V
ID = -0.88 A
VGS = -4.5 V
-IDSS, LEAKAGE CURRENT (nA)
RDS(on), DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
0.5
Figure 12. On-Resistance vs. Drain Current
and Gate Voltage
2.0
1.6
1.4
TJ = 150°C
1000
1.2
1.0
0.8
0.6
0.4
0.2
0
-50
VGS = -4.5 V
-ID, DRAIN CURRENT (AMPS)
Figure 11. On-Resistance vs. Drain Current
and Temperature
1.8
0.5
1
1.5
2
2.5
3
3.5
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
TJ = 125°C
100
10
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
10
5
15
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 13. On-Resistance Variation with
Temperature
Figure 14. Drain-to-Source Leakage Current
vs. Voltage
0
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5
20
NTJD3158C
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (P-Ch) (TJ = 25°C unless otherwise noted)
350
VDS = 0 V
Ciss
VGS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
300
250
Crss
200
150
100
50
Coss
0
10
5
VGS
0
VDS
5
10
15
20
5
QT
4
3
Q1
1
ID = -0.88 A
TJ = 25°C
0
0
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
0.4
0.8
1.2
1.6
Qg, TOTAL GATE CHARGE (nC)
2
Figure 16. Gate-to-Source Voltage vs. Total
Gate Charge
Figure 15. Capacitance Variation
100
0.5
-IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
Q2
2
td(off)
tr
10
td(on)
VDD = -10 V
ID = -0.8 A
VGS = -4.5 V
tf
1
VGS = 0 V
TJ = 25°C
0.4
0.3
0.2
0.1
0
1
10
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
-VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
RG, GATE RESISTANCE (OHMS)
Figure 17. Resistive Switching Time Variation
vs. Gate Resistance
Figure 18. Diode Forward Voltage vs. Current
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6
NTJD3158C
PACKAGE DIMENSIONS
SC-88/SC70-6/SOT-363
CASE 419B-02
ISSUE W
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B-01 OBSOLETE, NEW STANDARD 419B-02.
e
6
5
4
HE
DIM
A
A1
A3
b
C
D
E
e
L
HE
-E1
2
3
b 6 PL
0.2 (0.008)
M
E
M
A3
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
C
A
A1
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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NTJD3158C/D
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