NTJD3158C Power MOSFET 20 V, +0.63/-0.82 A, SC-88 Complementary, ESD Protected Features •Complementary N- and P-Channel MOSFET •Small Size Dual SC-88 Package •Reduced Gate Charge to Improve Switching Response •Independently Connected Devices to Provide Design Flexibility •This is a Pb-Free Device http://onsemi.com V(BR)DSS RDS(on) Max N-Ch 20 V 375 mW @ 4.5 V P-Ch -20 V 300 mW @ -4.5 V Symbol Value Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGS ±12 V ID 0.63 A N-Channel Continuous Drain Current (Note 1) Steady State t≤5s P-Channel Continuous Drain Current (Note 1) Steady State t≤5s Power Dissipation (Note 1) TA = 25°C TA = 85°C 0.46 TA = 25°C 0.72 TA = 25°C -0.59 TA = 25°C -0.93 t≤5s N-Ch P-Ch TA = 25°C tp = 10 ms PD 1 6 D1 N-Ch G1 2 5 G2 D2 3 4 S2 P-Ch (Top View) 0.35 IDM MARKING DIAGRAM & PIN ASSIGNMENT A 1.3 D1 G2 S2 -1.6 -55 to 150 °C Source Current (Body Diode) IS 0.46 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C THERMAL RESISTANCE RATINGS Parameter S1 W 0.27 TJ, Tstg Operating Junction and Storage Temperature SC-88 (SOT-363) (6-Leads) A -0.82 TA = 85°C Steady State Pulsed Drain Current ID -0.82 A 500 mW @ -2.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter 0.63 A 445 mW @ 2.5 V Applications •DC-DC Conversion Circuits •Load/Power Switching with Level Shift ID Max Symbol Max Unit Junction-to-Ambient – Steady State (Note 1) RqJA 460 °C/W Junction-to-Ambient – t ≤ 5 s (Note 1) RqJA 357 Junction-to-Lead (Drain) – Steady State (Note 1) RqJL 226 6 1 TG MG G SC-88 (SOT-363) CASE 419B STYLE 26 1 S1 G1 D2 TG M G = Specific Device Code = Date Code = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). Device Package Shipping† NTJD3158CT1G SC-88 (Pb-Free) 3000/Tape & Reel NTJD3158CT4G SC-88 (Pb-Free) 10000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 January, 2008 - Rev. 0 1 Publication Order Number: NTJD3158C/D NTJD3158C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol N/P Drain-to-Source Breakdown Voltage V(BR)DSS N Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS (Note 3) Zero Gate Voltage Drain Current Gate-to-Source Leakage Current VGS = 0 V P IDSS IGSS ID = 250 mA 20 ID = -250 mA -20 V 22 mV/°C N VGS = 0 V, VDS = 16 V 1.0 P VGS = 0 V, VDS = -16 V 1.0 N VDS = 0 V, VGS = ±12 V ±10 P VDS = 0 V, VGS = ±4.5 V ±1.0 P VDS = 0 V, VGS = ±12 V mA mA 6.0 ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Drain-to-Source On Resistance Forward Transconductance VGS(TH) RDS(on) gFS N ID = 250 mA 0.6 P ID = -250 mA -0.45 1.5 V mW N VGS = 4.5 V, ID = 0.63 A 290 375 P VGS = -4.5 V, ID = -0.88 A 255 300 N VGS = 2.5 V, ID = 0.40 A 360 445 500 P VGS = -2.5 V, ID = -0.71 A 345 N VDS = 4.0 V, ID = 0.63 A 2.0 P VDS = -10 V, ID = -0.88 A 3.0 S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance CISS COSS N VDS = 20 V 33 P VDS = -20 V 155 N P Reverse Transfer Capacitance f = 1 MHz, VGS = 0 V Gate-to-Source Charge Gate-to-Drain Charge 13 25 VDS = 20 V 2.8 CRSS N QG(TOT) N VGS = 4.5 V, VDS = 10 V, ID = 0.63 A 1.3 P VGS = -4.5 V, VDS = -15 V, ID = -0.88 A 2.2 QGS N VGS = 4.5 V, VDS = 10 V, ID = 0.63 A 0.2 P VGS = -4.5 V, VDS = -15 V, ID = -0.88 A 0.5 P Total Gate Charge VDS = 20 V VDS = -20 V QGD VDS = -20 V 46 pF 22 5.0 18 N VGS = 4.5 V, VDS = 10 V, ID = 0.63 A 0.4 P VGS = -4.5 V, VDS = -10 V, ID = -0.88 A 0.65 VGS = 4.5 V, VDD = 10 V, ID = 0.5 A, RG = 20 W 227 3.0 nC SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) 83 N tr td(OFF) tf td(ON) ns 786 506 5.8 P tr VGS = -4.5 V, VDD = -10 V, ID = -0.5 A, RG = 20 W td(OFF) tf 6.5 13.5 3.5 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD N P N P VGS = 0 V, TJ = 25°C VGS = 0 V, TJ = 125°C 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 IS = 0.23 A 0.76 1.1 IS = -0.48 A -0.8 -1.2 IS = 0.23 A 0.63 IS = -0.48 A -0.66 V NTJD3158C TYPICAL PERFORMANCE CURVES (N-Ch) (TJ = 25°C unless otherwise noted) 1.2 VGS = 4.5 V to 2.2 V 1.2 TJ = 25°C VDS ≥ 10 V VGS = 2 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 1.4 1.8 V 1 0.8 1.6 V 0.6 0.4 1.4 V 0.2 1 0.8 0.6 0.4 TJ = 125°C 0.2 25°C 1.2 V 0.7 TJ = -55°C 0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0 0.4 0.8 1.2 2 1.6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0 0 VGS = 4.5 V 0.6 0.5 TJ = 125°C 0.4 TJ = 25°C 0.3 TJ = -55°C 0.2 0.1 0 0 0.4 1 0.8 0.6 ID, DRAIN CURRENT (AMPS) 0.2 1.2 1.4 0.7 TJ = 125°C 0.5 0.4 TJ = 25°C 0.3 TJ = -55°C 0.2 0.1 0 0 0.2 0.6 0.4 1 0.8 ID, DRAIN CURRENT (AMPS) 1.4 80 ID = 0.63 A VGS = 4.5 V and 2.5 V TJ = 25°C C, CAPACITANCE (pF) VGS = 0 V 1.6 1.4 1.2 1 60 40 Ciss 20 Coss 0.8 0.6 -50 1.2 Figure 4. On-Resistance vs. Drain Current and Temperature 2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) VGS = 2.5 V 0.6 Figure 3. On-Resistance vs. Drain Current and Temperature 1.8 2.4 Crss 0 -25 0 25 50 75 100 125 150 0 5 10 15 TJ, JUNCTION TEMPERATURE (°C) DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 20 NTJD3158C 0.7 5 QG(TOT) IS, SOURCE CURRENT (AMPS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (N-Ch) (TJ = 25°C unless otherwise noted) 4 VGS 3 QGS 2 QGD 1 ID = 0.63 A TJ = 25°C 0 0 0.2 0.4 0.6 0.8 1 Qg, TOTAL GATE CHARGE (nC) 1.2 VGS = 0 V 0.6 0.5 0.4 0.3 0.2 TJ = 150°C 0.1 TJ = 25°C 0 1.4 0 0.2 0.4 0.6 0.8 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 7. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge Figure 8. Diode Forward Voltage vs. Current http://onsemi.com 4 1 NTJD3158C TYPICAL PERFORMANCE CURVES (P-Ch) (TJ = 25°C unless otherwise noted) 1 1 TJ = 25°C -2 V -ID, DRAIN CURRENT (AMPS) -ID, DRAIN CURRENT (AMPS) VGS = -4.5, -3.5 & -2.5 V -1.75 V 0.75 0.5 -1.5 V 0.25 -1.25 V -1 V 0 0.4 0 0.8 1.6 1.2 VDS ≥ -20 V 0.9 0.8 0.7 0.6 0.5 0.4 125°C 0.3 0.2 25°C 0.1 TJ = -55°C 0 2 0 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 10. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 9. On-Region Characteristics 0.3 VGS = -4.5 V TJ = 125°C 0.25 0.2 TJ = 25°C 0.15 TJ = -55°C 0.1 0 0.25 0.5 1 0.75 -ID, DRAIN CURRENT (AMPS) 2.5 TJ = 25°C 2.0 VGS = -1.8 V 1.5 1.0 0.5 VGS = -2.5 V 0 0.4 0.6 0.7 0.8 0.9 1 10000 VGS = 0 V ID = -0.88 A VGS = -4.5 V -IDSS, LEAKAGE CURRENT (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 0.5 Figure 12. On-Resistance vs. Drain Current and Gate Voltage 2.0 1.6 1.4 TJ = 150°C 1000 1.2 1.0 0.8 0.6 0.4 0.2 0 -50 VGS = -4.5 V -ID, DRAIN CURRENT (AMPS) Figure 11. On-Resistance vs. Drain Current and Temperature 1.8 0.5 1 1.5 2 2.5 3 3.5 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TJ = 125°C 100 10 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) 10 5 15 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 13. On-Resistance Variation with Temperature Figure 14. Drain-to-Source Leakage Current vs. Voltage 0 http://onsemi.com 5 20 NTJD3158C -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (P-Ch) (TJ = 25°C unless otherwise noted) 350 VDS = 0 V Ciss VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 300 250 Crss 200 150 100 50 Coss 0 10 5 VGS 0 VDS 5 10 15 20 5 QT 4 3 Q1 1 ID = -0.88 A TJ = 25°C 0 0 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0.4 0.8 1.2 1.6 Qg, TOTAL GATE CHARGE (nC) 2 Figure 16. Gate-to-Source Voltage vs. Total Gate Charge Figure 15. Capacitance Variation 100 0.5 -IS, SOURCE CURRENT (AMPS) t, TIME (ns) Q2 2 td(off) tr 10 td(on) VDD = -10 V ID = -0.8 A VGS = -4.5 V tf 1 VGS = 0 V TJ = 25°C 0.4 0.3 0.2 0.1 0 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) RG, GATE RESISTANCE (OHMS) Figure 17. Resistive Switching Time Variation vs. Gate Resistance Figure 18. Diode Forward Voltage vs. Current http://onsemi.com 6 NTJD3158C PACKAGE DIMENSIONS SC-88/SC70-6/SOT-363 CASE 419B-02 ISSUE W D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. e 6 5 4 HE DIM A A1 A3 b C D E e L HE -E1 2 3 b 6 PL 0.2 (0.008) M E M A3 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 C A A1 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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