MBR1050 thru MBR1060 High Tjm Low IRRM Schottky Barrier Diodes Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C A=Anode, C=Cathode, TAB=Cathode MBR1050 MBR1060 VRRM V 50 60 VRMS V 35 42 Symbol VDC V 50 60 Characteristics 10 A 150 A 10000 V/us IF=20A @TJ=25oC IF=20A @TJ=125oC 0.95 0.70 V @TJ=25oC @TJ=125oC 0.1 25 mA @TC=125oC IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Voltage Rate Of Change (Rated VR) Maximum Forward Voltage IR Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 1) 2.5 CJ Typical Junction Capacitance (Note 2) 400 TJ Operating Temperature Range ROJC TSTG Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Unit Maximum Average Forward Rectified Current VF Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Maximum Ratings I(AV) dv/dt Dim. Storage Temperature Range o C/W pF -55 to +150 o -55 to +175 o NOTES: 1. Thermal Resistance Junction To Case. 2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications * RoHS compliant P1 MECHANICAL DATA * Case: TO-220AC molded plastic * Polarity: As marked on the body * Weight: 2 grams * Mounting position: Any ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com C C MBR1050 thru MBR1060 High Tjm Low IRRM Schottky Barrier Diodes FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 10 150 125 8 100 6 4 RESISTIVE OR INDUCTIVE LOAD 2 0 25 50 75 100 125 150 175 75 50 25 0 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 1 2 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 100 20 10 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT ,(A) INSTANTANEOUS REVERSE CURRENT ,(mA) 5 NUMBER OF CYCLES AT 60Hz 10 TJ = 100 C 1.0 TJ = 75 C 0.1 TJ = 25 C 0.01 0.001 10 1.0 TJ = 25 C PULSE WIDTH 300us 2% Duty cycle 0.1 0 20 40 60 80 100 140 120 0.1 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 INSTANTANEOUS FORWARD VOLTAGE , (VOLTS) FIG.5 - TYPICAL JUNCTION CAPACITANCE CAPACITANCE , (pF) 10000 1000 TJ = 25 C, f= 1MHz 100 0.1 1 4 10 100 REVERSE VOLTAGE , VOLTS P2 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com