IPP05CN10L G OptiMOS®2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) V DS 100 V R DS(on),max 5.1 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPP05CN10L G Package PG-TO220-3 Marking 05CN10L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C2) 100 T C=100 °C 100 Pulsed drain current3) I D,pulse T C=25 °C 400 Avalanche energy, single pulse E AS I D=100 A, R GS=25 Ω 826 Reverse diode dv /dt dv /dt I D=100 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C 6 Gate source voltage 4) V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.02 Unit A mJ kV/µs ±20 V 300 W -55 ... 175 °C 55/175/56 page 1 2008-10-31 IPP05CN10L G Parameter Values Symbol Conditions Unit min. typ. max. - - 0.5 minimal footprint - - 62 6 cm2 cooling area5) - - 40 100 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, R thJA junction - ambient K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 1.2 1.85 2.4 Zero gate voltage drain current I DSS V DS=80 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=80 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=50 A - 4.8 6.4 mΩ V GS=10 V, I D=100 A - 4.2 5.1 - 1.8 - Ω 106 212 - S Gate resistance RG Transconductance g fs 1) |V DS|>2|I D|R DS(on)max, I D=100 A J-STD20 and JESD22 2) Current is limited by bondwire; with an R thJC=0.5 K/W the chip is able to carry 161 A. 3) See figure 3 4) Tjmax=150 °C and duty cycle D=0.01 for Vgs<-5V 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.02 page 2 2008-10-31 IPP05CN10L G Parameter Values Symbol Conditions Unit min. typ. max. - 11700 15600 pF - 1480 1970 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 75 - Turn-on delay time t d(on) - 46 - Rise time tr - 288 - Turn-off delay time t d(off) - 62 - Fall time tf - 37 - Gate to source charge Q gs - 40 - Gate to drain charge Q gd - 27 - - 31 - V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=4.5 V, I D=100 A, R G=1.6 Ω ns Gate Charge Characteristics 6) V DD=50 V, I D=100 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg - 163 - Gate plateau voltage V plateau - 3.4 - V Output charge Q oss - 152 - nC - - 100 - - 400 - 0.97 1.2 - 106 - 285 V DD=50 V, V GS=0 V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 6) T C=25 °C V GS=0 V, I F=100 A, T j=25 °C V R=50 V, I F=I S, di F/dt =100 A/µs A V ns - nC See figure 16 for gate charge parameter definition Rev. 1.02 page 3 2008-10-31 IPP05CN10L G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 350 120 300 100 250 200 I D [A] P tot [W] 80 60 150 40 100 20 50 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 100 1 µs 10 µs 100 µs 102 0.5 1 ms 0.2 10-1 10 ms 0.1 Z thJC [K/W] I D [A] 101 DC 10 0 0.05 0.02 0.01 single pulse 10-2 10-1 10-2 10-3 0.1 1 10 100 1000 V DS [V] Rev. 1.02 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2008-10-31 IPP05CN10L G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 400 12 6V 10 V 3V 3.5 V 320 9 4.5 V 7.5 V R DS(on) [mΩ] 240 I D [A] 4V 160 6 4V 4.5 V 10 V 3.5 V 3 80 3.2 V 3V 0 0 0 1 2 3 4 5 0 V DS [V] 50 100 150 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 300 240 250 200 200 160 g fs [S] I D [A] parameter: T j 150 100 80 175 °C 25 °C 50 40 0 0 0 2 4 6 0 50 100 I D [A] V GS [V] Rev. 1.02 120 page 5 2008-10-31 IPP05CN10L G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=100 A; V GS=10 V V GS(th)=f(T j); V GS=V DS 12 3 10 2.5 8 2 V GS(th) [V] R DS(on) [mΩ] parameter: I D 98 % 6 typ 250 µA 1.5 4 1 2 0.5 0 2500 µA 0 -60 -20 20 60 100 140 180 -60 -20 20 T j [°C] 60 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 105 103 Ciss 104 25 °C 102 I F [A] C [pF] Coss 103 25 °C, 98% 175 °C 101 Crss 102 175 °C, 98% 101 100 0 20 40 60 80 V DS [V] Rev. 1.02 0 0.5 1 1.5 2 V SD [V] page 6 2008-10-31 IPP05CN10L G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=100 A pulsed parameter: T j(start) parameter: V DD 1000 10 8 20 V 100 50 V 6 V GS [V] I AS [A] 25 °C 100 °C 150 °C 80 V 4 10 2 1 0 1 10 100 1000 0 50 100 150 200 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 120 V GS Qg V BR(DSS) [V] 110 V g s(th) 100 Q g(th) Q sw Q gs 90 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.02 page 7 2008-10-31 IPP05CN10L G PG-TO220-3: Outline Rev. 1.02 page 8 2008-10-31 IPP05CN10L G Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.02 page 9 2008-10-31