DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD904L CATV amplifier module Product specification Supersedes data of 1999 Mar 26 1999 Aug 17 Philips Semiconductors Product specification CATV amplifier module BGD904L FEATURES PINNING - SOT115J • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Excellent return loss properties 2 common • Silicon nitride passivation 3 common • Rugged construction 5 +VB • Gold metallization ensures excellent reliability 7 common • Low DC current consumption. 8 common 9 output APPLICATIONS • CATV systems operating in the 40 to 900 MHz frequency range. handbook, halfpage 1 2 3 5 7 8 9 DESCRIPTION Hybrid amplifier module in a SOT115J package operating with a supply voltage of 24 V. Side view MSA319 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL Gp Itot PARAMETER CONDITIONS power gain total current consumption (DC) MIN. MAX. UNIT f = 50 MHz 19.7 20.3 dB f = 900 MHz 20.5 21.5 dB VB = 24 V 350 380 mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VB supply voltage − 30 V Vi RF input voltage − 70 dBmV Tstg storage temperature −40 +100 °C Tmb operating mounting base temperature −20 +100 °C 1999 Aug 17 2 Philips Semiconductors Product specification CATV amplifier module BGD904L CHARACTERISTICS Bandwidth 40 to 900 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω. SYMBOL Gp PARAMETER power gain CONDITIONS MIN. TYP. MAX. UNIT f = 50 MHz 19.7 20 20.3 dB f = 900 MHz 20.5 21 21.5 dB SL slope straight line f = 40 to 900 MHz 0.4 0.9 1.4 dB FL flatness straight line f = 40 to 900 MHz − ±0.15 ±0.3 dB S11 input return losses f = 40 to 80 MHz 21 25 − dB f = 80 to 160 MHz 22 30 − dB f = 160 to 320 MHz 21 29 − dB f = 320 to 550 MHz 18 24 − dB f = 550 to 650 MHz 17 22 − dB S22 output return losses f = 650 to 900 MHz 16 21 − dB f = 40 to 80 MHz 25 29 − dB f = 80 to 160 MHz 23 28 − dB f = 160 to 320 MHz 19 25 − dB f = 320 to 750 MHz 18 24 − dB f = 750 to 900 MHz 17 23 − dB S21 phase response f = 50 MHz −45 − +45 deg CTB composite triple beat 49 channels flat; Vo = 47 dBmV; fm = 859.25 MHz − −65.5 −64 dB 77 channels flat; Vo = 44 dBmV; fm = 547.25 MHz − −67.5 −65.5 dB 110 channels flat; Vo = 44 dBmV; fm = 745.25 MHz − −61 −59.5 dB 129 channels flat; Vo = 44 dBmV; fm = 859.25 MHz − −57 −55 dB 110 channels; fm = 397.25 MHz; Vo = 49 dBmV at 550 MHz; note 1 − −61.5 −59.5 dB − 129 channels; fm = 649.25 MHz; Vo = 49.5 dBmV at 860 MHz; note 2 −56 −54 dB 49 channels flat; Vo = 47 dBmV; fm = 55.25 MHz − −64 −61 dB 77 channels flat; Vo = 44 dBmV; fm = 55.25 MHz − −66.5 −64 dB 110 channels flat; Vo = 44 dBmV; fm = 55.25 MHz − −63 −60.5 dB 129 channels flat; Vo = 44 dBmV; fm = 55.25 MHz − −61.5 −59 dB 110 channels; fm = 397.25 MHz; Vo = 49 dBmV at 550 MHz; note 1 − −60 −57.5 dB − 129 channels; fm = 859.25 MHz; Vo = 49.5 dBmV at 860 MHz; note 2 −56 −53.5 dB Xmod cross modulation 1999 Aug 17 3 Philips Semiconductors Product specification CATV amplifier module SYMBOL CSO d2 Vo NF Itot BGD904L PARAMETER composite second order distortion second order distortion output voltage noise figure CONDITIONS MIN. TYP. MAX. 49 channels flat; Vo = 47 dBmV; fm = 860.5 MHz − −69 −63 dB 77 channels flat; Vo = 44 dBmV; fm = 548.5 MHz − −73 −68 dB 110 channels flat; Vo = 44 dBmV; fm = 746.5 MHz − −69 −63 dB 129 channels flat; Vo = 44 dBmV; fm = 860.5 MHz − −65 −59 dB 110 channels; fm = 150 MHz; Vo = 49 dBmV at 550 MHz; note 1 − −68 −63 dB 129 channels; fm = 150 MHz; − Vo = 49.5 dBmV at 860 MHz; note 2 −63 −58 dB − −82 −75 dB note 3 note 4 − −83 −76 dB note 5 − −83 −77 dB dim = −60 dB; note 6 62.5 64 − dBmV dim = −60 dB; note 7 63.5 65.5 − dBmV dim = −60 dB; note 8 65.5 67.5 − dBmV CTB compression = 1 dB; 129 channels flat; f = 859.25 MHz 47.5 48.5 − dBmV CSO compression = 1 dB; 129 channels flat; f = 860.5 MHz 50 52 − dBmV f = 50 MHz − 3.8 5 dB f = 550 MHz − 4.1 5.5 dB f = 750 MHz − 4.8 6.5 dB f = 900 MHz − 5.9 7.5 dB 350 365 380 mA total current consumption (DC) note 9 Notes 1. Tilt = 9 dB (50 to 550 MHz); tilt = 3.5 dB at −6 dB offset (550 to 750 MHz). 2. Tilt = 12.5 dB (50 to 860 MHz). 3. fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp + fq = 860.5 MHz. 4. fp = 55.25 MHz; Vp = 44 dBmV; fq = 691.25 MHz; Vq = 44 dBmV; measured at fp + fq = 746.5 MHz. 5. fp = 55.25 MHz; Vp = 44 dBmV; fq = 493.25 MHz; Vq = 44 dBmV; measured at fp + fq = 548.5 MHz. 6. Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo −6 dB; fr = 860.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 849.25 MHz. 7. Measured according to DIN45004B: fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo −6 dB; fr = 749.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 738.25 MHz. 8. Measured according to DIN45004B: fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo −6 dB; fr = 549.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 538.25 MHz. 9. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V. 1999 Aug 17 UNIT 4 Philips Semiconductors Product specification CATV amplifier module BGD904L MGS452 −50 handbook, halfpage handbook, halfpage (2) (dBmV) (3) (1) −60 (2) (3) (4) −60 44 −70 40 −80 36 800 −90 −70 Vo (2) (dBmV) (3) (4) 48 (1) (dB) 48 (4) 52 Xmod Vo CTB (dB) MGS453 −50 52 44 (1) (1) −80 −90 200 0 400 600 40 200 0 400 f (MHz) 36 800 600 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz); tilt = 3.5 dB at −6 dB offset (550 to 750 MHz). ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz); tilt = 3.5 dB at −6 dB offset (550 to 750 MHz). (1) Vo. (2) Typ. +3 σ. (1) Vo. (2) Typ. +3 σ. Fig.2 (3) Typ. (4) Typ. −3 σ. Composite triple beat as a function of frequency under tilted conditions. MGS454 −50 handbook, halfpage Fig.3 52 Vo (dBmV) CSO (dB) (1) −60 (2) (1) 48 (2) −70 (3) 44 (3) −90 (4) (4) −80 40 0 200 400 36 800 600 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz); tilt = 3.5 dB at −6 dB offset (550 to 750 MHz). (1) Vo. (2) Typ. +3 σ. Fig.4 (3) Typ. (4) Typ. −3 σ. Composite second order distortion as a function of frequency under tilted conditions. 1999 Aug 17 5 (3) Typ. (4) Typ. −3 σ. Cross modulation as a function of frequency under tilted conditions. Philips Semiconductors Product specification CATV amplifier module BGD904L MGS455 −50 handbook, halfpage CTB (dB) (2) (1) (3) MGS456 −50 52 handbook, halfpage Xmod Vo (dBmV) 52 (2) (dB) (3) (1) Vo (dBmV) (4) 48 48 −60 −70 44 −70 44 −80 40 −80 40 36 1000 800 f (MHz) −90 −60 (4) −90 200 0 400 600 0 200 400 ZS = ZL = 75 Ω; VB = 24 V; 129 chs; tilt = 12.5 dB; (50 to 860 MHz). (1) Vo. (3) Typ. (2) Typ. +3 σ. (4) Typ. −3 σ. ZS = ZL = 75 Ω; VB = 24 V; 129 chs; tilt = 12.5 dB; (50 to 860 MHz). (1) Vo. (3) Typ. (2) Typ. +3 σ. (4) Typ. −3 σ. Fig.5 Fig.6 Composite triple beat as a function of frequency under tilted conditions. MGS457 −50 handbook, halfpage CSO (dB) (1) −60 52 Vo (dBmV) 48 (2) −70 44 (3) (4) −80 −90 0 200 400 600 40 36 1000 800 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 129 chs; tilt = 12.5 dB; (50 to 860 MHz). (1) Vo. (3) Typ. (2) Typ. +3 σ. (4) Typ. −3 σ. Fig.7 Composite second order distortion as a function of frequency under tilted conditions. 1999 Aug 17 6 600 36 1000 800 f (MHz) Cross modulation as a function of frequency under tilted conditions. Philips Semiconductors Product specification CATV amplifier module BGD904L MGS458 −20 MGS459 −30 handbook, halfpage handbook, halfpage CTB (dB) CSO (dB) −30 −40 −40 −50 −50 −60 (1) (2) (1) (2) (3) −60 −70 40 −70 45 50 Vo (dBmV) −80 40 55 (3) 45 50 Vo (dBmV) ZS = ZL = 75 Ω; VB = 24 V; 129 chs; fm = 859.25 MHz. (1) Typ. +3 σ. (2) Typ. (3) Typ. −3 σ. ZS = ZL = 75 Ω; VB = 24 V; 129 chs; fm = 860.5 MHz. (1) Typ. +3 σ. (2) Typ. (3) Typ. −3 σ. Fig.8 Fig.9 Composite triple beat as a function of output voltage. 1999 Aug 17 7 55 Composite second order distortion as a function of output voltage. Philips Semiconductors Product specification CATV amplifier module BGD904L PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A2 1 2 3 5 7 8 9 A L F S W c e b w M e1 d U2 q2 Q B y M B q1 y M B y M B p U1 q 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. mm 20.8 9.1 OUTLINE VERSION b c d D E max. max. max. e e1 F 0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 0.38 L min. p Q max. 8.8 4.15 3.85 2.4 REFERENCES IEC JEDEC EIAJ q1 q2 38.1 25.4 10.2 S U1 U2 max. 4.2 44.75 8 EUROPEAN PROJECTION W w 6-32 0.25 UNC y Z max. 0.1 3.8 ISSUE DATE 99-02-06 SOT115J 1999 Aug 17 q 8 Philips Semiconductors Product specification CATV amplifier module BGD904L DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Aug 17 9 Philips Semiconductors Product specification CATV amplifier module BGD904L NOTES 1999 Aug 17 10 Philips Semiconductors Product specification CATV amplifier module BGD904L NOTES 1999 Aug 17 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125008/02/pp12 Date of release: 1999 Aug 17 Document order number: 9397 750 06076