PD - 90577 IRFAF50 900V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRFAF50 BVDSS 900V RDS(on) ID 1.6Ω 6.2Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. TO-3 Features: n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 0V, TC = 25°C ID @ VGS = 0V, TC = 100°C I DM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units 6.2 4.0 25 150 1.2 ±20 870 6.2 15 1.5 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 (0.063 in. (1.6mm) from case for 10s) 11.5(typical) C g For footnotes refer to the last page www.irf.com 1 01/24/01 IRFAF50 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) RDS(on) VGS(th) gfs IDSS Parameter Min Drain-to-Source Breakdown Voltage 900 — — V — 1.2 — V/°C — — 2.0 4.9 — — — — — — — — 1.6 1.85 4.0 — 25 250 Ω — — 80 7.5 48 — — — — — — — — — — — — — — 6.1 100 -100 180 17 110 33 66 200 57 — — — — 2700 500 200 — — Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current IGSS Gate-to-Source Leakage Forward I GSS Gate-to-Source Leakage Reverse Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain (‘Miller’) Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time LS + LD Total Inductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Typ Max Units V S( ) Ω BVDSS ∆BV DSS/∆TJ µA nA nC Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 10V, ID =4.0A ➃ VGS = 10V, ID =6.2A ➃ VDS = VGS, ID =250µA VDS > 15V, IDS =4.0A ➃ VDS=720V, VGS=0V VDS =720V VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 10V, ID = 6.2A VDS = 450V VDD = 400V*, ID =6.2A, RG =2.35Ω pF VGS = 0V, VDS = 25V f = 1.0MHz *Equipment Limitation Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ — — — — 6.2 25 A VSD t rr QRR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge — — — — — — 1.8 1500 11 V nS µC ton Forward Turn-On Time Test Conditions Tj = 25°C, IS =6.2A, VGS = 0V ➃ Tj = 25°C, IF =6.2A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC R thJA Junction to Case Junction to Ambient Min Typ Max Units — — — — 0.83 30 °C/W Test Conditions Typical socket mount For footnotes refer to the last page 2 www.irf.com IRFAF50 Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFAF50 13 a& b 4 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com IRFAF50 V DS VGS RD D.U.T. RG + -V DD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFAF50 1 5V L VD S D .U .T RG IA S 10V 20V D R IV E R + V - DD A 0 .0 1 Ω tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 10 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFAF50 Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 50V, starting TJ = 25°C, L>43mH, Peak IL = 6.2A, ➂ ISD ≤ 6.2A, di/dt ≤ 130A/µs, VDD≤ 900V, TJ ≤ 150°C Suggested RG =2.35 Ω ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Case Outline and Dimensions —TO-204AA (Modified TO-3) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 1/01 www.irf.com 7