APT100GN60LDQ4(G) 600V TYPICAL PERFORMANCE CURVES APT100GN60LDQ4 APT100GN60LDQ4G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. TO-264 • 600V Field Stop • • • • Trench Gate: Low VCE(on) Easy Paralleling 6µs Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT100GN60LDQ4(G) VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current 8 @ TC = 25°C 229 I C2 Continuous Collector Current 8 @ TC = 110°C 135 I CM Pulsed Collector Current SSOA PD TJ,TSTG TL 1 UNIT Volts Amps 300 300A @ 600V Switching Safe Operating Area @ TJ = 175°C 625 Total Power Dissipation Operating and Storage Junction Temperature Range Watts -55 to 175 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES RG(int) (VCE = VGE, I C = 1mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) TYP MAX 5.0 5.8 6.5 1.05 1.45 1.85 50 2 600 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA TBD Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor Volts 1.87 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Units nA Ω 10-2005 MIN Rev A Characteristic / Test Conditions 050-7622 Symbol APT100GN60LDQ4(G) DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA SCSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf 200 Gate Charge 9.5 VGE = 15V 600 VGE = µs VCC = 400V 65 55 RG = 1.0Ω 7 4750 TJ = +25°C 2675 Turn-on Delay Time Inductive Switching (125°C) 31 VCC = 400V 65 Current Rise Time Turn-off Delay Time VGE = 15V 350 RG = 1.0Ω 7 85 5000 I C = 100A Current Fall Time 44 Turn-on Switching Energy (Diode) µJ 5095 6 Turn-on Switching Energy ns 310 I C = 100A Eon2 nC 6 VGE = 15V Turn-on Switching Energy (Diode) V A 31 5 pF 300 Inductive Switching (25°C) 4 UNIT 340 7, VCC = 600V, VGE = 15V, Current Fall Time MAX 45 TJ = 125°C, R G = 4.3Ω 7 Turn-off Delay Time Turn-off Switching Energy 560 f = 1 MHz 15V, L = 100µH,VCE = 600V Current Rise Time Eon1 Eoff VGE = 0V, VCE = 25V TJ = 175°C, R G = 4.3Ω Turn-on Delay Time Turn-off Switching Energy 6000 I C = 100A Short Circuit Safe Operating Area TYP Capacitance VCE = 300V Switching Safe Operating Area Turn-on Switching Energy MIN 55 TJ = +125°C ns 6255 66 µJ 3300 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .21 RθJC Junction to Case (DIODE) .33 WT Package Weight 6.1 UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 050-7622 Rev A 10-2005 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) 8 Continuous current limited by package pin temperature to 100A. APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES = 15V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 250 TJ = 175°C 200 TJ = 125°C 150 TJ = 25°C 100 TJ = -55°C 50 0 TJ = 25°C TJ = 125°C 200 150 100 50 TJ = 175°C 0 0 200 11V 150 10V 100 9V 50 8V 7V FIGURE 2, Output Characteristics (TJ = 125°C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 250 TJ = -55°C 12V 250 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(TJ = 25°C) 250µs PULSE TEST<0.5 % DUTY CYCLE 13V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 300 15V 300 J VCE = 120V 12 VCE = 300V 10 VCE = 480V 8 6 4 2 0 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) I = 100A C T = 25°C 14 0 100 TJ = 25°C. 250µs PULSE TEST <0.5 % DUTY CYCLE 2.5 IC = 200A 2.0 IC = 100A 1.5 IC = 50A 1.0 0.5 0 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Threshold Voltage vs. Junction Temperature IC, DC COLLECTOR CURRENT(A) (NORMALIZED) VGS(TH), THRESHOLD VOLTAGE 1.05 700 3.0 IC = 200A 2.5 2.0 IC = 100A 1.5 IC = 50A 1.0 0.5 0 VGE = 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE 0 25 50 75 100 125 150 175 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 300 1.15 1.10 600 FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 3.0 200 300 400 500 GATE CHARGE (nC) 250 200 150 100 50 0 -50 -25 Lead Temperature Limited 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature 10-2005 GE Rev A V APT100GN60LDQ4(G) 350 050-7622 300 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) VGE = 15V 35 30 25 20 15 10 VCE = 400V T = 25°C, or 125°C 5 RJ = 1.0Ω G 0 L = 100µH VCE = 400V RG = 1.0Ω L = 100µH 150 100 G 20 TJ = 125°C 10 5 TJ = 25°C 35 30 25 20 15 Eon2,100A Eoff,200A Eoff,100A Eon2,50A Eoff,50A 20 15 10 5 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0 = 400V V CE = +15V V GE R = 1.0Ω 7 G 6 TJ = 125°C 5 4 3 2 TJ = 25°C 1 0 0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current SWITCHING ENERGY LOSSES (mJ) Eon2,200A J 5 TJ = 25°C, VGE = 15V 25 = 400V V CE = +15V V GE T = 125°C 10 40 0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 40 60 0 0 45 80 8 V = 400V CE V = +15V GE R = 1.0Ω 15 TJ = 125°C, VGE = 15V 100 20 EOFF, TURN OFF ENERGY LOSS (mJ) 25 0 RG = 1.0Ω, L = 100µH, VCE = 400V 120 tf, FALL TIME (ns) tr, RISE TIME (ns) 100 140 RG = 1.0Ω, L = 100µH, VCE = 400V 0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current EON2, TURN ON ENERGY LOSS (mJ) VGE =15V,TJ=25°C 200 250 0 SWITCHING ENERGY LOSSES (mJ) VGE =15V,TJ=125°C 0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current TJ = 25 or 125°C,VGE = 15V 10-2005 300 0 50 Rev A 400 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 0 200 050-7622 APT100GN60LDQ4(G) 500 40 = 400V V CE = +15V V GE R = 1.0Ω Eon2,200A G 20 15 10 Eoff,200A Eon2,100A 5 0 Eoff,100A Eon2,50A Eoff,50A 125 100 75 50 25 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0 TYPICAL PERFORMANCE CURVES 10,000 IC, COLLECTOR CURRENT (A) Cies P C, CAPACITANCE ( F) 5,000 1,000 Coes 500 APT100GN60LDQ4(G) 350 300 250 200 150 100 Cres 50 100 0 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0.20 D = 0.9 0.7 0.15 0.5 Note: 0.10 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.25 0.3 0.05 0 t2 SINGLE PULSE t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.1 0.05 10-5 t1 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 0.116 0.244 Case temperature. (°C) FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf 10 T = 125°C J T = 75°C C D = 50 % V = 400V CE R = 1.0Ω 4 10 G max fmax2 = Pdiss - Pcond Eon2 + Eoff Pdiss = TJ - TC RθJC 30 50 70 90 110 130 150 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 10-2005 0.00708 F Rev A 0.949 Power (watts) 50 050-7622 RC MODEL Junction temp. (°C) FMAX, OPERATING FREQUENCY (kHz) 100 APT100GN60LDQ4(G) Gate Voltage 10% APT100DQ60 TJ = 125°C td(on) tr V CE IC V CC Collector Current 90% 5% 10% 5% Collector Voltage A Switching Energy D.U.T. Figure 22, Turn-on Switching Waveforms and Definitions Figure 21, Inductive Switching Test Circuit 90% Gate Voltage td(off) TJ = 125°C tf 90% Collector Voltage 10% 0 Collector Current Switching Energy 050-7622 Rev A 10-2005 Figure 23, Turn-off Switching Waveforms and Definitions TYPICAL PERFORMANCE CURVES APT100GN60LDQ4(G) ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol IF(AV) IF(RMS) IFSM All Ratings: TC = 25°C unless otherwise specified. APT100GN60LDQ4 Characteristic / Test Conditions Maximum Average Forward Current (TC = 108°C, Duty Cycle = 0.5) 100 RMS Forward Current (Square wave, 50% duty) 156 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) UNIT Amps 1000 STATIC ELECTRICAL CHARACTERISTICS Symbol VF Characteristic / Test Conditions MIN Forward Voltage TYP MAX IF = 100A 1.6 2.2 IF = 200A 2.05 IF = 100A, TJ = 125°C 1.28 UNIT Volts DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C Reverse Recovery Time Qrr Reverse Recovery Charge IF = 100A, diF/dt = -200A/µs VR = 400V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 400V, TC = 25°C Maximum Reverse Recovery Current trr IRRM IF = 100A, diF/dt = -200A/µs IF = 100A, diF/dt = -1000A/µs VR = 400V, TC = 125°C Maximum Reverse Recovery Current MIN TYP MAX UNIT - 34 - 160 - 290 - 5 - 220 ns - 1530 nC - 13 - 100 ns - 2890 nC - 44 Amps ns nC - - Amps Amps D = 0.9 0.30 0.25 0.7 0.20 0.5 Note: 0.15 PDM 0.3 0.10 t1 t2 0.05 0 10-5 t 0.1 0.05 0.05 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE SINGLE PULSE PULSE 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION RC MODEL 0.0182 0.188 0.361 0.0743 5.17 Case temperature (°C) FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL Rev A Power (watts) 0.0673 10-2005 Junction temp (°C) 050-7622 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.35 300 trr, REVERSE RECOVERY TIME (ns) TJ = 25°C 250 IF, FORWARD CURRENT (A) APT100GN60LDQ4(G) 300 200 TJ = 175°C 150 TJ = 125°C 100 50 T =125°C J V =400V R 250 200A 200 100A 50A 150 100 50 TJ = -55°C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 26. Reverse Recovery Time vs. Current Rate of Change 60 T =125°C J V =400V 3500 R 200A 3000 100A 2500 2000 50A 1500 1000 500 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 27. Reverse Recovery Charge vs. Current Rate of Change 0.6 IRRM Qrr CJ, JUNCTION CAPACITANCE (pF) 10-2005 Rev A Duty cycle = 0.5 T =175°C J 100 80 60 40 20 0 1400 050-7622 10 120 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 29. Dynamic Parameters vs. Junction Temperature 1200 1000 800 600 400 200 0 50A 20 140 0.2 0.0 100A 30 160 trr 0.4 200A 40 180 trr 0.8 R 50 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 28. Reverse Recovery Current vs. Current Rate of Change Qrr 1.0 T =125°C J V =400V 0 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) 1.2 IRRM, REVERSE RECOVERY CURRENT (A) Qrr, REVERSE RECOVERY CHARGE (nC) 4000 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 30. Maximum Average Forward Current vs. CaseTemperature TYPICAL PERFORMANCE CURVES APT100GN60LDQ4(G) Vr diF /dt Adjust +18V APT60M75L2LL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 32. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 3 0.25 IRRM 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 33, Diode Reverse Recovery Waveform and Definitions TO-264(L) Package Outline e1 SAC: Tin, Silver, Copper Collector (Cathode) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) Gate Collector (Cathode) Dimensions in Millimeters and (Inches) APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. Rev A 5.45 (.215) BSC 2-Plcs. 050-7622 0.48 (.019) 0.76 (.030) 0.84 (.033) 1.30 (.051) 2.79 (.110) 2.59 (.102) 3.18 (.125) 3.00 (.118) 10-2005 Emitter (Anode)