Spec. No. : C107Q8 Issued Date : 2016.03.01 Revised Date : Page No. : 1/9 CYStech Electronics Corp. Dual P-Channel Enhancement Mode Power MOSFET MTB017B03Q8 BVDSS ID@VGS=-10V, TA=25°C -30V RDSON(MAX)@VGS=-10V, ID=-8A -8.8A 14.2mΩ(typ.) RDSON(MAX)@VGS=-4.5V, ID=-5A 21.2mΩ(typ.) Features • Simple drive requirement • Low on-resistance • Fast switching speed • Dual P-ch MOSFET package • Pb-free lead plating & Halogen-free package Equivalent Circuit Outline SOP-8 MTB017B03Q8 G：Gate S：Source D：Drain Ordering Information Device Package SOP-8 MTB017B03Q8-0-T3-G (RoHS compliant & Halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB017B03Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C107Q8 Issued Date : 2016.03.01 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=-10V, TA=25 °C Continuous Drain Current @ VGS=-10V, TA=100 °C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=1mH, ID=-8A, VD=-15V Repetitive Avalanche Energy @ L=0.05mH TA=25°C Power Dissipation TA=100°C Operating Junction and Storage Temperature Range Symbol Limits VDS VGS -30 ±25 -8.8 -6.2 -35 -12 32 8 2.4 1.2 -55~+175 ID (Note 1) (Note 2) (Note 3) IDM IAS EAS EAR PD Tj ; Tstg Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC RθJA Value 25 62.5 *3 Unit °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad MTB017B03Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C107Q8 Issued Date : 2016.03.01 Revised Date : Page No. : 3/9 Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. BVDSS VGS(th) IGSS -30 -1 - 14.2 21.2 12 -2.5 ±100 -1 -10 18 28 - - 31.7 17 5.1 6.7 11.2 18.4 66.4 18.4 1423 147 125 7 - - -0.8 13.5 6.5 -2.3 -9.2 -1.2 - Unit Test Conditions Static IDSS *RDS(ON) *1 GFS *1 Dynamic Qg(VGS=-10V) *1, 2 Qg(VGS=-5V) *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr *1 Qrr *1 S VGS=0V, ID=-250μA VDS = VGS, ID=-250μA VGS=±25V VDS =-24V, VGS =0V VDS =-20V, VGS =0V, Tj=125°C VGS =-10V, ID=-8A VGS =-4.5V, ID=-6A VDS =-10V, ID=-8A nC ID=-8A, VDS=-15V, VGS=-10V ns VDS=-15V, ID=-1A,VGS=-10V, RG=2.7Ω pF VGS=0V, VDS=-15V, f=1MHz Ω VGS=15mV, VDS=0V, f=1MHz V nA μA mΩ A V ns nC IS= -3A, VGS=0V IF= -2.3A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint MTB017B03Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C107Q8 Issued Date : 2016.03.01 Revised Date : Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 10V,9V,8V,7V,6V,5V 32 -I D, Drain Current(A) -BVDSS, Normalized Drain-Source Breakdown Voltage 36 4V 28 24 20 3.5V 16 12 8 1.2 1 0.8 ID=-250μA, VGS=0V 0.6 -VGS=3V 4 0.4 0 0 1 2 3 4 -VDS, Drain-Source Voltage(V) -75 -50 -25 5 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 100 -VSD, Source-Drain Voltage(V) R DS(ON), Static Drain-Source On-State Resistance(mΩ) 1.2 VGS=-4.5V VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 VGS=-10V 0.2 10 0.01 0.1 1 10 -ID, Drain Current(A) 0 100 2 4 6 8 -IDR, Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2 360 R DS(ON), Normalized Static DrainSource On-State Resistance 400 R DS(ON), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) ID=-8A 320 280 240 200 160 120 80 40 1.8 1.6 VGS=-10V, ID=-8A RDSON@Tj=25°C : 14.2mΩ typ. 1.4 1.2 1 0.8 VGS=-4.5V, ID=-5A RDSON@Tj=25°C : 21.2mΩ typ. 0.6 0.4 0.2 0 0 MTB017B03Q8 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C107Q8 Issued Date : 2016.03.01 Revised Date : Page No. : 5/9 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th) , Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 Crss 1.6 1.4 1.2 ID=-1mA 1 0.8 0.6 ID=-250μA 0.4 0.2 10 0 5 10 15 20 25 -VDS, Drain-Source Voltage(V) -75 -50 -25 30 50 75 100 125 150 175 200 10 100 RDSON limited 100μs 10 -VGS, Gate-Source Voltage(V) -I D, Drain Current (A) 25 Gate Charge Characteristics Maximum Safe Operating Area 1ms 10ms 100ms 1 1s 0.1 TA=25°C, Tj=175°C VGS=-10V, RθJA=62.5°C/W Single Pulse 10 DC 8 VDS=-10V 6 4 VDS=-15V 2 ID=-8A 0 0.01 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) 0 1000 6 12 18 24 Qg, Total Gate Charge(nC) 30 36 Forward Transfer Admittance vs Drain Current Maximum Drain Current vs Junction Temperature 100 GFS, Forward Transfer Admittance(S) 10 9 -I D, Maximum Drain Current(A) 0 Tj, Junction Temperature(°C) 8 7 6 5 4 3 2 TA=25°C, VGS=-10V, RθJA=62.5°C/W 1 0 25 MTB017B03Q8 50 75 100 125 150 Tj, Junction Temperature(°C) 175 200 VDS=-10V 10 1 VDS=-15V 0.1 Pulsed Ta=25°C 0.01 0.001 0.01 0.1 1 -ID, Drain Current(A) 10 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C107Q8 Issued Date : 2016.03.01 Revised Date : Page No. : 6/9 Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Ambient (Note on page 2) Typical Transfer Characteristics 300 36 TJ(MAX) =175°C TA=25°C RθJA=62.5°C/W VDS=-10V 32 28 -ID, Drain Current(A) Power (W) 250 200 150 100 24 20 16 12 8 50 4 0 0.001 0 0.01 0.1 1 Pulse Width(s) 10 100 0 1 2 3 4 5 -VGS , Gate-Source Voltage(V) Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM -TA=PDM *RθJA(t) 4.RθJA=62.5°C/W 0.1 0.05 0.02 0.01 0.01 0.001 1.E-04 Single Pulse 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTB017B03Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C107Q8 Issued Date : 2016.03.01 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB017B03Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C107Q8 Issued Date : 2016.03.01 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB017B03Q8 CYStek Product Specification Spec. No. : C107Q8 Issued Date : 2016.03.01 Revised Date : Page No. : 9/9 CYStech Electronics Corp. SOP-8 Dimension Right side View G Top View A Marking: I C B H Device Name Date Code J K E D B017 B03 Front View Part A Part A M L N 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 O F *: Typical Inches Min. Max. 0.1850 0.2007 0.1457 0.1614 0.2283 0.2441 0.0500* 0.0130 0.0201 0.1472 0.1527 0.0472 0.0638 0.1889 0.2007 DIM A B C D E F G H Millimeters Min. Max. 4.70 5.10 3.70 4.10 5.80 6.20 1.27* 0.33 0.51 3.74 3.88 1.20 1.62 4.80 5.10 DIM I J K L M N O Inches Min. Max. 0.0031 0.0110 0.0157 0.0323 0.0074 0.0102 0.0145 0.0204 0.0118 0.0197 0.0031 0.0051 0.0000 0.0059 Millimeters Min. Max. 0.08 0.28 0.40 0.83 0.19 0.26 0.37 0.52 0.30 0.50 0.08 0.13 0.00 0.15 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB017B03Q8 CYStek Product Specification