CYSTEKEC MTB017B03Q8 Dual p-channel enhancement mode power mosfet Datasheet

Spec. No. : C107Q8
Issued Date : 2016.03.01
Revised Date :
Page No. : 1/9
CYStech Electronics Corp.
Dual P-Channel Enhancement Mode Power MOSFET
MTB017B03Q8
BVDSS
[email protected]=-10V, TA=25°C
-30V
RDSON(MAX)@VGS=-10V, ID=-8A
-8.8A
14.2mΩ(typ.)
RDSON(MAX)@VGS=-4.5V, ID=-5A 21.2mΩ(typ.)
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Dual P-ch MOSFET package
• Pb-free lead plating & Halogen-free package
Equivalent Circuit
Outline
SOP-8
MTB017B03Q8
G:Gate S:Source D:Drain
Ordering Information
Device
Package
SOP-8
MTB017B03Q8-0-T3-G
(RoHS compliant & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB017B03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C107Q8
Issued Date : 2016.03.01
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=-10V, TA=25 °C
Continuous Drain Current @ VGS=-10V, TA=100 °C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=1mH, ID=-8A, VD=-15V
Repetitive Avalanche Energy @ L=0.05mH
TA=25°C
Power Dissipation
TA=100°C
Operating Junction and Storage Temperature Range
Symbol
Limits
VDS
VGS
-30
±25
-8.8
-6.2
-35
-12
32
8
2.4
1.2
-55~+175
ID
(Note 1)
(Note 2)
(Note 3)
IDM
IAS
EAS
EAR
PD
Tj ; Tstg
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Value
25
62.5 *3
Unit
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
MTB017B03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C107Q8
Issued Date : 2016.03.01
Revised Date :
Page No. : 3/9
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
-30
-1
-
14.2
21.2
12
-2.5
±100
-1
-10
18
28
-
-
31.7
17
5.1
6.7
11.2
18.4
66.4
18.4
1423
147
125
7
-
-
-0.8
13.5
6.5
-2.3
-9.2
-1.2
-
Unit
Test Conditions
Static
IDSS
*RDS(ON) *1
GFS *1
Dynamic
Qg(VGS=-10V) *1, 2
Qg(VGS=-5V) *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Ciss
Coss
Crss
Rg
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr *1
Qrr *1
S
VGS=0V, ID=-250μA
VDS = VGS, ID=-250μA
VGS=±25V
VDS =-24V, VGS =0V
VDS =-20V, VGS =0V, Tj=125°C
VGS =-10V, ID=-8A
VGS =-4.5V, ID=-6A
VDS =-10V, ID=-8A
nC
ID=-8A, VDS=-15V, VGS=-10V
ns
VDS=-15V, ID=-1A,VGS=-10V,
RG=2.7Ω
pF
VGS=0V, VDS=-15V, f=1MHz
Ω
VGS=15mV, VDS=0V, f=1MHz
V
nA
μA
mΩ
A
V
ns
nC
IS= -3A, VGS=0V
IF= -2.3A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
MTB017B03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C107Q8
Issued Date : 2016.03.01
Revised Date :
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
10V,9V,8V,7V,6V,5V
32
-I D, Drain Current(A)
-BVDSS, Normalized Drain-Source
Breakdown Voltage
36
4V
28
24
20
3.5V
16
12
8
1.2
1
0.8
ID=-250μA,
VGS=0V
0.6
-VGS=3V
4
0.4
0
0
1
2
3
4
-VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
100
-VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
1.2
VGS=-4.5V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
VGS=-10V
0.2
10
0.01
0.1
1
10
-ID, Drain Current(A)
0
100
2
4
6
8
-IDR, Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2
360
R DS(ON), Normalized Static DrainSource On-State Resistance
400
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
ID=-8A
320
280
240
200
160
120
80
40
1.8
1.6
VGS=-10V, ID=-8A
[email protected]=25°C : 14.2mΩ typ.
1.4
1.2
1
0.8
VGS=-4.5V, ID=-5A
[email protected]=25°C : 21.2mΩ typ.
0.6
0.4
0.2
0
0
MTB017B03Q8
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C107Q8
Issued Date : 2016.03.01
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th) , Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
1.6
1.4
1.2
ID=-1mA
1
0.8
0.6
ID=-250μA
0.4
0.2
10
0
5
10
15
20
25
-VDS, Drain-Source Voltage(V)
-75 -50 -25
30
50 75 100 125 150 175 200
10
100
RDSON
limited
100μs
10
-VGS, Gate-Source Voltage(V)
-I D, Drain Current (A)
25
Gate Charge Characteristics
Maximum Safe Operating Area
1ms
10ms
100ms
1
1s
0.1
TA=25°C, Tj=175°C
VGS=-10V, RθJA=62.5°C/W
Single Pulse
10
DC
8
VDS=-10V
6
4
VDS=-15V
2
ID=-8A
0
0.01
0.01
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
0
1000
6
12
18
24
Qg, Total Gate Charge(nC)
30
36
Forward Transfer Admittance vs Drain Current
Maximum Drain Current vs Junction Temperature
100
GFS, Forward Transfer Admittance(S)
10
9
-I D, Maximum Drain Current(A)
0
Tj, Junction Temperature(°C)
8
7
6
5
4
3
2
TA=25°C, VGS=-10V, RθJA=62.5°C/W
1
0
25
MTB017B03Q8
50
75
100
125
150
Tj, Junction Temperature(°C)
175
200
VDS=-10V
10
1
VDS=-15V
0.1
Pulsed
Ta=25°C
0.01
0.001
0.01
0.1
1
-ID, Drain Current(A)
10
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C107Q8
Issued Date : 2016.03.01
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Typical Transfer Characteristics
300
36
TJ(MAX) =175°C
TA=25°C
RθJA=62.5°C/W
VDS=-10V
32
28
-ID, Drain Current(A)
Power (W)
250
200
150
100
24
20
16
12
8
50
4
0
0.001
0
0.01
0.1
1
Pulse Width(s)
10
100
0
1
2
3
4
5
-VGS , Gate-Source Voltage(V)
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient Thermal
Resistance
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM -TA=PDM *RθJA(t)
4.RθJA=62.5°C/W
0.1
0.05
0.02
0.01
0.01
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB017B03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C107Q8
Issued Date : 2016.03.01
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB017B03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C107Q8
Issued Date : 2016.03.01
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB017B03Q8
CYStek Product Specification
Spec. No. : C107Q8
Issued Date : 2016.03.01
Revised Date :
Page No. : 9/9
CYStech Electronics Corp.
SOP-8 Dimension
Right side View
G
Top View
A
Marking:
I
C
B
H
Device Name
Date Code
J
K
E
D
B017
B03
Front View
Part A
Part A
M
L
N
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
O
F
*: Typical
Inches
Min.
Max.
0.1850
0.2007
0.1457
0.1614
0.2283
0.2441
0.0500*
0.0130
0.0201
0.1472
0.1527
0.0472
0.0638
0.1889
0.2007
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
4.70
5.10
3.70
4.10
5.80
6.20
1.27*
0.33
0.51
3.74
3.88
1.20
1.62
4.80
5.10
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
0.0031
0.0110
0.0157
0.0323
0.0074
0.0102
0.0145
0.0204
0.0118
0.0197
0.0031
0.0051
0.0000
0.0059
Millimeters
Min.
Max.
0.08
0.28
0.40
0.83
0.19
0.26
0.37
0.52
0.30
0.50
0.08
0.13
0.00
0.15
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB017B03Q8
CYStek Product Specification
Similar pages