APT8011JLL 800V 51A 0.110W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP ® D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS S S G S All Ratings: TC = 25°C unless otherwise specified. APT8011JLL Parameter UNIT L A C I N H C N E T O I E T C MA N A OR V AD INF 800 Drain-Source Voltage Volts 51 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 690 Watts Linear Derating Factor 5.52 W/°C VGSM PD TJ,TSTG 204 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 51 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 50 4 mJ 3600 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) 800 Volts 51 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) TYP MAX 0.110 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) UNIT Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 050-7093 Rev - 9-2001 Symbol DYNAMIC CHARACTERISTICS Symbol APT8011JLL MIN Test Conditions Characteristic TYP Ciss Input Capacitance VGS = 0V 10020 Coss Output Capacitance VDS = 25V 1930 Crss Reverse Transfer Capacitance f = 1 MHz 317 Qg Total Gate Charge VGS = 10V 369 Qgs Gate-Source Charge VDD = 0.5 VDSS 48 Qgd Gate-Drain ("Miller") Charge ID = ID[Cont.] @ 25°C 209 td(on) Turn-on Delay Time tr td(off) tf 3 L A C I N H C N E T O I E T C MA N A OR V AD INF VGS = 15V 23 VDD = 0.5 VDSS 23 ID = ID[Cont.] @ 25°C 83 RG = 0.6W 19 Rise Time Turn-off Delay Time Fall Time MAX UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS MIN Characteristic / Test Conditions TYP Continuous Source Current (Body Diode) MAX 51 ISM Pulsed Source Current 1 (Body Diode) 204 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) 1.3 UNIT Amps Volts t rr Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs) 1000 ns Q Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/µs) 34.0 µC rr dv/ dt Peak Diode Recovery dv/ dt 5 10 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol Characteristic RqJC Junction to Case RqJA Junction to Ambient MIN TYP 0.18 40 1 Repetitive Rating: Pulse width limited by maximum junction °C/W 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 2.77mH, R = 25W, Peak I = 51A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS £ -ID Cont. di/dt £ 700A/µs VR £ VDSS TJ £ 150°C [ ] APT Reserves the right to change, without notice, the specifications and information contained herein. temperature. 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 1.95 (.077) 2.14 (.084) 3.3 (.129) 3.6 (.143) 050-7093 Rev - 9-2001 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 14.9 (.587) 15.1 (.594) * Source Drain 30.1 (1.185) 30.3 (1.193) * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058