FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Features Applications • High speed switching Motor controls and general purpose inverters. • Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A Description • High input impedance Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The device is designed for Motor applications where ruggedness is a required feature. • CO-PAK, IGBT with FRD : trr = 50 ns (typ.) • Short Circuit rated C G TO-220 1 1.Gate 2.Collector E 3.Emitter Absolute Maximum Ratings Symbol Description VCES Collector-Emitter Voltage VGES Gate-Emitter Voltage IC Collector Current @ TC = 25°C Collector Current @ TC = 100°C ICM (1) Pulsed Collector Current IF Diode Continuous Forward Current IFM Diode Maximum Forward Current PD Maximum Power Dissipation Maximum Power Dissipation FGP7N60RUFD Units 600 V ± 20 V 14 A 7 A 21 A 12 A 60 A @ TC = 25°C 69 W @ TC = 100°C 28 W @ TC = 100°C TJ Operating Junction Temperature -55 to +150 °C Tstg Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units 1.8 °C/W RθJC(IGBT) Thermal Resistance, Junction-to-Case -- RθJC(DIODE) Thermal Resistance, Junction-to-Case -- 3.0 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W ©2006 Fairchild Semiconductor Corporation FGP7N60RUFD Rev. A 1 www.fairchildsemi.com FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK January 2006 Device Marking Device Package Packaging Type Qty per Tube FGP7N60RUFD FGP7N60RUFDTU TO-220 Rail / Tube 50ea Electrical Characteristics of the IGBT Symbol Parameter Max Qty per Box - TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V -- V/°C Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA ∆BVCES/ ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 3mA -- 0.6 ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA On Characteristics VGE(th) G-E Threshold Voltage IC = 7mA, VCE = VGE 5.0 6.5 8.0 V VCE(sat) Collector to Emitter Saturation Voltage IC = 7A, VGE = 15V -- 1.95 2.8 V IC = 7A, VGE = 15V, TC = 125°C -- 2.1 -- V IC = 14 A, VGE = 15V -- 2.65 -- V VCE = 30V, VGE = 0V, f = 1MHz -- 510 -- pF -- 55 -- pF -- 15 -- pF -- 60 -- ns -- 60 -- ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time -- 60 80 ns tf Fall Time -- 170 280 ns Eon Turn-On Switching Loss -- 0.23 -- mJ Eoff Turn-Off Switching Loss -- 0.10 -- mJ Ets Total Switching Loss -- 0.33 0.5 mJ td(on) Turn-On Delay Time -- 65 -- ns tr Rise Time -- 70 -- ns td(off) Turn-Off Delay Time -- 55 -- ns tf Fall Time -- 350 -- ns Eon Turn-On Switching Loss -- 0.25 -- mJ Eoff Turn-Off Switching Loss -- 0.27 -- mJ Ets Total Switching Loss -- 0.52 -- mJ Qg Total Gate Charge -- 24 36 nC Qge Gate-Emitter Charge -- 4 6 nC Qgc Gate-Collector Charge -- 10 15 nC Le Internal Emitter Inductance -- 7.5 -- nH FGP7N60RUFD Rev. A VCC = 300 V, IC = 7A, RG = 30Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 7 A, RG =30Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 300 V, IC = 7A, VGE = 15V Measured 5mm from PKG 2 www.fairchildsemi.com FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Package Marking and Ordering Information C Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time = 25°C unless otherwise noted Test Conditions IF = 7A IF = 7A dI/dt = 200 A/µs Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge FGP7N60RUFD Rev. A 3 Min. Typ. Max. Units TC = 25°C -- 1.65 2.1 V TC = 100°C -- 1.58 -- TC = 25°C -- 50 65 TC = 100°C -- 58 -- TC = 25°C -- 2.5 3.75 TC = 100°C -- 3.3 -- TC = 25°C -- 62.5 122 TC = 100°C -- 95.7 -- ns A nC www.fairchildsemi.com FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Electrical Characteristics of DIODE T Figure 1. Typical Output Characteristics 40 Figure 2. Typical Saturation Voltage Characteristics 40 o T C = 25 C C o m m o n E m itte r V Ge = 1 5 V 20V 15V o 12V 20 10V 10 Tc = 25 C o Tc = 125 C 30 Collector Current, IC[A] Collector Current, IC [A] 30 20 10 V GE= 8V 0 0 0 2 4 6 0 8 C ollector-Em itter Voltage, V C E [V] Figure 3. Saturation Voltage vs Case Temperature at Variant Current Level 4 6 8 Figure 4. Load Current vs Frequency 15 Com m om Em itter V GE = 15V Vcc = 300V load Current : peak of square wave Ic = 14 A 3 Load Current [A] Collector - Emitter Voltage, VCE[V] 4 2 C o lle c to r-E m itte r V o lta ge , V c e [V ] Ic = 7 A 2 10 5 Ic =3.5 A 1 0 25 50 75 100 125 Duty cycle : 50% o Tc = 100 C Power Dissipation = 14W 0 150 0.1 1 o Case Temperature, Tc [ C] Figure 5. Saturation Voltage vs. Vge 100 1000 Figure 6. Saturation Voltage vs. Vge 10 [V] Common Emitter o T C = 25 C C om m on E m itte r o T c = 12 5 C 8 CE 8 Collector - Emitter Voltage, V Collector - Emitter Voltage, V CE [V] 10 10 Frequency [kHz] 6 4 14A 7A 2 Ic=3.5A 5 FGP7N60RUFD Rev. A 10 15 Gate - Emitter Voltage, V GE [V] 6 4 1 4A 7A 2 Ic =3.5 A 0 5 20 10 15 20 G ate - E m itter V oltage, V G E [V ] 4 www.fairchildsemi.com FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Typical Performance Characteristics (Continued) Figure 7. Capacitance Characteristics Temperature at Variant Current Level 1000 Figure 8. Turn-On Characteristics vs. Gate Resistance Common Emitter V GE = 0V, f = 1MHz Ton o T C = 25 C Switching Time [ns] 800 Capacitance [pF] Ciss 600 Coss 400 100 Tr C o m m o n E m itte r V C C = 3 0 0 V , V GE = + /-1 5 V Crss IC = 7 A 200 o Tc = 25 C o Tc = 125 C 10 0 1 10 10 Collector-Emitter Voltage, V CE [V] Figure 9. Turn-Off Characteristics vs. Gate Resistance Figure 10. Switching Loss vs. Gate Resistance 600 Com m on Em itter V CC = 300V, V GE = +/-15V 1000 IC = 7A o Switching Loss [uJ] Switching Time [ns] Tc = 25 C o Tc = 125 C Toff Tf Toff Tf 100 500 C o m m o n E m itte r V C C = 3 0 0 V , V G E = + /-1 5 V 400 IC = 7 A o Eon Tc = 25 C o Tc = 125 C 300 E o ff Eon 200 100 100 10 E o ff 100 10 Gate Resistance, R G [Ω ] G a te R e s is ta nc e , R G [ Ω ] Figure 11. Turn-On Characteristics vs. Collector Current Figure 12. Turn-Off Characteristics vs. Collector Current 1000 200 150 Common Emitter V GE = +/-15V, RG=30 Ω 100 Tc = 25 C o Tc = 125 C 800 Com m on Em itter V GE = +/-15V, R G =30 Ω IC = 7A IC = 7A o 600 Ton Switching Time [ns] Switching Time [ns] 100 G a te R e sista nce , R G [ Ω ] Tr 50 o T c = 25 C o T c = 125 C T off 400 Tf T off 200 4 6 8 10 12 4 14 Collector Current, IC [A] FGP7N60RUFD Rev. A Tf 6 8 10 12 14 C ollector C urrent, IC [A] 5 www.fairchildsemi.com FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Typical Performance Characteristics (Continued) Figure 13. Switching Loss vs. Collector Current 1000 Figure 14. Gate Charge Characteristics 15 Common Emitter V GE = +/-15V, R G=30 Ω Gate-Emitter Voltage, VGE [V] IC = 7A o Switching Loss [uJ] Tc = 25 C o Tc = 125 C Eoff Eon Eoff 100 4 6 8 10 12 Common Emitter R L = 43 ohm o T C = 25 C 200V 300V Vcc = 100V 10 5 0 14 0 Collector Current, IC [A] 4 8 12 16 Gate Charge, Q g [nC] 20 24 Figure 15. SOA Characteristics 100 Collector Current, Ic [A] Ic MAX (Pulsed) 50µs Ic MAX (Continuous) 10 100µs 1ms 1 DC Operation Single Nonrepetitive o Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 0.1 0.01 0.1 1 10 100 1000 Collector - Emitter Voltage, VCE [V] Figure 16. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 10 1 0 .5 0 .2 0 .1 0 .1 0 .0 5 Pdm 0 .0 2 t1 0 .0 1 t2 s in g le p u ls e Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 0 .0 1 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10 R e c ta n g u la r P u ls e D u ra tio n [s e c ] FGP7N60RUFD Rev. A 6 www.fairchildsemi.com FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Typical Performance Characteristics (Continued) Figure 17. Forward Voltage Characteristics Figure 18. Reverse Recovery Current Reverse Recovery Current , Irr [A] 3.0 Forward Current , IF [A] 10 o 1 T C = 100 C o T C = 25 C 0.1 0.5 1.0 1.5 2.0 2.5 di/d t=200 A /u s 2.5 2.0 di/dt=10 0A /u s 1.5 1.0 3.0 2 4 Forward Voltage , VF [V] Figure 19. Stored Charge 8 10 12 14 Figure 20. Reverse Recovery Time 80 60 70 60 Reverse Recovery Time , trr [ns] Reverse Recovery Charge , Qrr [nC] 6 F orw ard C urrent , IF [A ] di/dt=200A/us 50 di/dt=100A/us 40 30 2 4 6 8 10 12 di/dt=100A/us 50 40 di/dt=200A/us 30 14 2 Forward Current , IF [A] 4 6 8 10 12 14 Forward Current , IF [A] Dimensions in Millimeters FGP7N60RUFD Rev. A 7 www.fairchildsemi.com FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Typical Performance Characteristics TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 (45° 1.52 ±0.10 10.08 ±0.30 13.08 ±0.20 (1.00) ) 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.40 ±0.20 10.00 ±0.20 FGP7N60RUFD Rev. A 8 www.fairchildsemi.com FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Mechanical Dimensions The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17 9 FGP7N60RUFD Rev. A www.fairchildsemi.com FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK TRADEMARKS