D a ta s h e e t AS1372 350mA Dual Rail Linear Regulator 1 General Description 2 Key Features The AS1372 is a Dual Supply Rail Linear Regulator designed for providing ultra-low voltages. ! Input Voltage: 0.7V to 4.5V ! Bias Supply Voltage: 2.5V to 5.5V In a typical application the battery is directly connected to VBIAS and VIN is connected to the output of a DC-DC Converter. ! Output Voltage: 0.5V to 2.2V in 100mV steps ! Output Voltage Accuracy: ±1.5% ! Dropout Voltage 135mV @ 350mA load ! Max. Output Current: 350mA ! Load Transient Response: ±15mV (typ.) ! Superior Efficiency ! Low Shutdown Current: 10nA ! High PSRR: >80dB @ 10Hz-1kHz, 60db @100kHz ! Noise Voltage: 50µVRMS from 10Hz to 1000kHz ! Integrated Overtemperature/Overcurrent Protection ! Chip Enable Input ! Operating Temperature Range: -40°C to +85°C ! 5-bumps CS-WLP Package The very low quiescent currents together with the excellent transient features and the superior dropout are making the AS1372 an ideal device for applications running on batteries. The robust design ensures that no under-voltage failure can occur and the device is also equipped with an internal protection against over-temperature and overcurrent. The device is available in fixed output voltages from 0.5V up to 2.2V in 100mV steps (50mV from 0.5V to 1.1V). The AS1372 is available in a 5-bumps CS-WLP package and is qualified for -40°C to +85°C operation. 3 Applications The devices are ideal for powering cordless and mobile phones, MP3 players, PDAs, hand-held computers, digital cameras, and any other hand-held and/or batterypowered device. Figure 1. AS1372 - Typical Application Diagram ! " #$! % www.austriamicrosystems.com/LDOs/AS1372 Revision 1.01 1 - 14 AS1372 Datasheet - P i n A s s i g n m e n t s 4 Pin Assignments Figure 2. Pin Assignments (Top View) 1 3 2 4 5 Pin Descriptions Table 1. Pin Descriptions Pin Number 1 2 Pin Name VOUT GND 3 EN 4 VBIAS 5 VIN Description Regulated Output Voltage. Bypass this pin with a capacitor to GND. Ground. Enable. Pull this pin to low to disable the device. This pin has an internal 1.6MΩ (typ.) pull-down resistor. Bias Supply Voltage. 2.5V to 5.5V, Bypass this pin with a capacitor to GND. Unregulated Input Voltage. 0.7V to 4.5V, VIN ≤ VBIAS, Bypass this pin with a capacitor to GND. www.austriamicrosystems.com/LDOs/AS1372 Revision 1.01 2 - 14 AS1372 Datasheet - A b s o l u t e M a x i m u m R a t i n g s 5 Absolute Maximum Ratings Stresses beyond those listed in Table 2 may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in Section 6 Electrical Characteristics on page 4 is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 2. Absolute Maximum Ratings Parameter Min Max Units Notes VIN, VBIAS and EN to GND -0.3 +6.5 V VIN < VBIAS or equal in operating conditions VOUT to GND -0.3 VIN + 0.3 V Output Short-Circuit Duration Indefinite ESD 2 kV HBM MIL-Std. 883E 3015.7 methods +100 mA JEDEC 78 Latch-Up -100 Operating Temperature Range -40 +85 ºC Storage Temperature Range -65 +150 ºC +125 ºC Junction Temperature Package Body Temperature www.austriamicrosystems.com/LDOs/AS1372 +260 Revision 1.01 ºC The reflow peak soldering temperature (body temperature) specified is in accordance with IPC/JEDEC J-STD020D “Moisture/Reflow Sensitivity Classification for Non-Hermetic Solid State Surface Mount Devices”. The lead finish for Pb-free leaded packages is matte tin (100% Sn). 3 - 14 AS1372 Datasheet - E l e c t r i c a l C h a r a c t e r i s t i c s 6 Electrical Characteristics VIN = VOUT + 0.2V, VBIAS = VOUT + 1.5V (or 2.5V whichever is larger), EN = VBIAS, CIN = COUT = CBIAS = 1µF, TAMB = 40°C to +85ºC, Typical Values are at TAMB = +25ºC (unless otherwise specified). Table 3. Electrical Characteristics Symbol Parameter Conditions Min VIN Input Voltage VIN ≤ VBIAS VBIAS Bias Supply Voltage VOUT Output Voltage Output Voltage Accuracy VOUT > 1.2V VOUT(NOM) - VOUT Output Voltage Accuracy VOUT ≤ 1.2V Typ Max Units 0.7 4.5 V 2.5 5.5 V Available in 50mV or 100mV steps (see Ordering Information on page 13) 0.5 2.2 V IOUT = 100µA -1.5 +1.5 IOUT = 100µA to 350mA, VIN = VOUT(NOM)+0.2V to 4.5V, VBIAS = VOUT(NOM)+1.5V to 5.5V -2 +2 IOUT = 100µA -2 +2 IOUT = 100µA to 350mA, VIN = VOUT(NOM)+0.2V to 4.5V, VBIAS = VOUT(NOM)+1.5V to 5.5V -2.5 +2.5 % % ΔVOUT / ΔVIN Line Regulation VIN VIN = VOUT(NOM)+0.2V to 4.5V, VBIAS = 5.5V, IOUT = 100µA 40 µV/V ΔVOUT / ΔVBIAS Line Regulation VBIAS VBIAS = VOUT(NOM)+1.5V to 5.5V, IOUT = 100µA 100 µV/V ΔVLDR Load Regulation IOUT = 1mA to 350mA 6 µV/mA IOUT Output Current ILIM Current Limit VDROP VIN VDROP VBIAS EN PSRR VIN PSRR VBIAS 1 350 mA 500 VBIAS = VOUT + 1.5V, IOUT = 350mA 135 VBIAS = VOUT + 1.8V, IOUT = 350mA 115 VBIAS = 5.5V, IOUT = 350mA 110 Output Voltage Dropout VBIAS IOUT = 100mA 1.1 Output Voltage Noise VOUT ≤ 1.2V, f = 10Hz to 100kHz 50 f = 100Hz 85 f = 1kHz 80 f = 10kHz 70 f = 100kHz 60 f = 100Hz 75 f = 1kHz 60 f = 10kHz 50 f = 100kHz 50 Output Voltage Dropout VIN Power-Supply Rejection Ratio Sine modulated VIN Power-Supply Rejection Ratio Sine modulated VBIAS IQ_VBIAS Quiescent Current into VBIAS IQ_VIN Quiescent Current into VIN www.austriamicrosystems.com/LDOs/AS1372 IOUT = 0mA Revision 1.01 mA mV 1.5 V µVRMS dB dB 40 75 6.5 10 µA 4 - 14 AS1372 Datasheet - E l e c t r i c a l C h a r a c t e r i s t i c s Table 3. Electrical Characteristics Symbol Parameter ISHDN VBIAS Shutdown Current into VBIAS ISHDN VIN Shutdown Current into VIN Conditions Min Typ Max Units 10 VEN = 0V nA 10 Logic Levels VIH VIL IEN 1 Enable Input Threshold Enable Input Bias Current 0.4 EN = GND V 0.01 nA Thermal Protection TSHDN Thermal Shutdown Temperature 150 ºC ΔTSHDN Thermal Shutdown Hysteresis 25 ºC Transient Characteristics ΔVOUT Dynamic Load Transient Response Pulsed ILOAD from 0mA to 300mA in 10µs rise time 15 mV tON Exit Delay from Shutdown VOUT ≤ 1.2V, setting to 95% 70 µs COUT Output Capacitor Load Capacitor Range 1 10 µF Maximum ESR Load 1 500 mΩ 1. guaranteed by design Note: All limits are guaranteed. The parameters with min and max values are guaranteed with production tests or SQC (Statistical Quality Control) methods. www.austriamicrosystems.com/LDOs/AS1372 Revision 1.01 5 - 14 AS1372 Datasheet - Ty p i c a l O p e r a t i n g C h a r a c t e r i s t i c s 7 Typical Operating Characteristics VIN = 1.2V, VBIAS = 2.5V, VOUT = 1.0V, EN = VBIAS, CIN = COUT = CBIAS = 1µF, TAMB = -40°C to +85ºC, Typical Values are at TAMB = +25ºC (unless otherwise specified). Figure 4. Bias Supply Current vs. Bias Supply Voltage 50 50 45 45 Bias Supply Current (µA) Bias Supply Current (µA) Figure 3. Bias Supply Current vs. Bias Supply Voltage 40 35 30 no load 25 Iout = 350mA no load 40 35 30 - 40°C + 25°C 25 +85 °C 20 20 2.5 3 3.5 4 4.5 5 5.5 2.5 3 Bias Supply Voltage (V) Figure 5. Ground Current vs. VIN; VBIAS = 5.5V 4 4.5 5 60 55 55 50 45 40 - 40°C + 25°C 35 50 45 40 35 - 40°C + 25°C +85 °C +85 °C 30 30 2.5 3 3.5 4 4.5 2.5 Input Voltage (V) 3.5 4 4.5 Figure 8. Ground Current vs. Load Current 60 55 55 Ground Current (µA) 60 50 45 40 35 3 Input Voltage / Bias Supply Voltage (V) Figure 7. Ground Current vs. Bias Supply Voltage Ground Current (µA) 5.5 Figure 6. Ground Current vs. VIN / VBIAS; 60 Ground Current (µA) Ground Current (µA) 3.5 Bias Supply Voltage (V) 50 45 40 35 no load - 40°C + 25°C + 85°C Iout = 350mA 30 30 2.5 3 3.5 4 4.5 5 5.5 2.5 Bias Supply Voltage (V) www.austriamicrosystems.com/LDOs/AS1372 3 3.5 4 4.5 5 5.5 Load Current (mA) Revision 1.01 6 - 14 AS1372 Datasheet - Ty p i c a l O p e r a t i n g C h a r a c t e r i s t i c s Figure 9. PSRR VIN; VIN = 3VDC + 250mVpk Figure 10. PSRR VBIAS; VBIAS = 3.5VDC + 500mVpk -40 Bias Supply Voltage - PSRR (dB) Input Voltage - PSRR (dB) -40 -50 -60 -70 -80 -90 -100 100 1000 10000 -50 -60 -70 -80 -90 -100 100 100000 1000 Frequency (Hz) 100000 Figure 12. Line Regulation: VOUT vs. VBIAS 1.015 1.015 1.01 1.01 Output Voltage (V) Output Voltage (V) Figure 11. Line Regulation: VOUT vs. VIN; VBIAS = 5.5V 1.005 1 0.995 0.99 1.005 1 0.995 0.99 0.985 0.985 1.2 1.5 1.8 2.1 2.4 2.7 3 3.3 3.6 3.9 4.2 4.5 2.5 2.75 Input Voltage (V) 3 3.25 3.5 3.75 4 4.25 4.5 Bias Supply Voltage (V) Figure 13. Load Regulation: VOUT vs. IOUT Figure 14. Output Voltage vs. Temperature; IOUT = 1mA 1.015 1.015 1.01 1.01 Output Voltage (V) Output Voltage (V) 10000 Frequency (Hz) 1.005 1 0.995 0.99 1.005 1 0.995 0.99 0.985 0 50 100 150 200 250 300 350 0.985 -45 Output Current (mA) www.austriamicrosystems.com/LDOs/AS1372 -25 -5 15 35 55 75 Temperature (°C) Revision 1.01 7 - 14 AS1372 Datasheet - Ty p i c a l O p e r a t i n g C h a r a c t e r i s t i c s Figure 15. Dropout VIN vs. Temp.; IOUT = 350mA Figure 16. Enable Start-up 200 500mV/Div VEN 150 125 75 50 -45 500mV/Div 100 VOUT Dropout VIN (mV) 175 -25 -5 15 35 55 75 20µs/Div Temperature (°C) 50µs/Div 100µs/Div www.austriamicrosystems.com/LDOs/AS1372 20mV/Div 0mA IOUT 350mA Figure 18. Load Transient Response; VIN = 2.0V VOUT VOUT 20mV/Div VIN 2.0V 2.5V Figure 17. Line Transient Response; IOUT = 350mA Revision 1.01 8 - 14 AS1372 Datasheet - D e t a i l e d D e s c r i p t i o n 8 Detailed Description The AS1372 is a low-dropout, low-quiescent-current linear regulator intended for LDO regulator applications where output current load requirements range from no load to 350mA. All devices come with fixed output voltage from 0.5V to 2.2V. (see Ordering Information on page 13). Shutdown current for the whole regulator is typically 10nA. The device features integrated short-circuit and over current protection. Under-Voltage lockout prevents erratic operation when the input voltage is slowly decaying (e.g. in a battery powered application). Thermal Protection shuts down the device when die temperature reaches 150°C. This is a useful protection when the device is under sustained short circuit conditions. As illustrated in Figure 19, the devices comprise voltage reference, error amplifier, N-channel MOSFET pass transistor, internal voltage divider, current limiter, thermal sensor and shutdown logic. The bandgap reference is connected to the inverting input of the error amplifier. The error amplifier compares this reference with the feedback voltage and amplifies the difference. If the feedback voltage is lower than the reference voltage, the N-channel MOSFET gate is pulled higher, allowing more current to pass to the output, and increases the output voltage. If the feedback voltage is too high, the pass-transistor gate is pulled down, allowing less current to pass to the output. The output voltage feeds back through an internal resistor voltage divider connected to pin OUT. Figure 19. AS1372 - Block Diagram VIN VBIAS EN Thermal Overload Protection Bandgap Voltage & Current Reference Shutdown/ Power-On Control Logic Error Amplifier + NMOS OUT Trimmable Reference Voltage AS1372 GND Output Voltages Standard products are factory-set with output voltages from 0.5V to 2.2V. A two-digit suffix of the part number identifies the nominal output (see Ordering Information on page 13). Non-standard devices are available. For more information contact: http://www.austriamicrosystems.com/contact www.austriamicrosystems.com/LDOs/AS1372 Revision 1.01 9 - 14 AS1372 Datasheet - A p p l i c a t i o n I n f o r m a t i o n 9 Application Information Advantages of dual supply architecture vs. traditional single supply approach. If compared to the traditional single supply approach, the dual rail architecture ensures improved performances in a LDO at the expense of an additional supply voltage and a dedicated pin. Anyhow, it is worth to note that the additional supply voltage comes for free in all those applications where the LDO is supplied by the output of a DCDC step-down converter: Vin pin is coupled to the step-down output and Vbias is shorted to the DCDC converter supply. Figure 20. Single vs. Dual Supply Single Supply Dual Supply VBIAS VIN Bandgap Bandgap PMOS core blocks + error amplifier VOUT core blocks VIN + error amplifier NMOS VOUT The former is based on a PMOS output transistor connected in a common source configuration: the supply voltage at its source is shared with all the circuit. On the other side, the dual supply approach is based on a NMOS transistor in common drain configuration having its source coincident with the regulated output of the LDO: the supply voltage at the drain is not shared with the remaining blocks of the circuit and its value can be chosen independently. The second solution allows improved efficiency and dropout at low output reference voltage and faster transient time response. Improved efficiency At heavy current load the power consumption is almost entirely located in the output transistor. This means that keeping drain to source voltage, that is the difference between input and output voltage of the LDO, as small as possible is the key factor for a good efficiency. It holds, approximately: Efficiency = (Vout / Vin)x100 [%] While this achievement is little challenging in case the output voltage is large enough, traditional implementations based on a PMOS device face a serious bottleneck at low output voltage. In fact the supply voltage cannot be made consequently small because of dynamic range limitations in the core of the LDO circuitry. In many commercial cases the supply voltage cannot be made smaller than 2 or 2,5V which gives only 25% or 20% efficiency for a 500mV reference output. On the contrary, the possibility to have a dedicated supply voltage for the output transistor offers the possibility to set the drain to source voltage of the output transistor independently from the dynamic range limitations inside the core of the circuit. Thus, even at very small output voltage, the drain to source voltage can be made quite small and guarantee optimal efficiency performance. For instance, by setting Vin at 800mV makes more than 60% efficiency for an output voltage as small as 500mV still ensuring excellent analog performances in the LDO. www.austriamicrosystems.com/LDOs/AS1372 Revision 1.01 10 - 14 AS1372 Datasheet - A p p l i c a t i o n I n f o r m a t i o n Improved dropout Dropout mainly refers to the resistivity of the output transistor when its gate is driven to ground and the feedback regulation loop is open. Moreover when the output transistor is in dropout input and output voltages are nearly coincident. In this way, in a traditional approach, the gate to source voltage that determines the resistivity of the output PMOS in dropout is nearly equal to the output voltage. This means that a smaller output voltage brings worse dropout performances. In the dual supply approach, on the contrary, in dropout conditions the gate of the output transistor is pushed to Vbias voltage and only Vin drops nearly coincident to Vout. As Vbias can be chosen independently from Vin, even at small output voltages a large overdrive at the output transistor can be ensured and an extremely reduced dropout value comes out. Faster response In a traditional approach, the output of the LDO is coincident with the drain of the output PMOS transistor. In this way, if the load current suddenly changes, any variation at the output voltage is not able to vary the output current of the LDO until it is amplified to the gate of the output PMOS by the error amplifier. A delay comes, unavoidably. On the contrary, in the dual supply approach it is the source of the output transistor to be coincident with the output voltage. In this way a change in the output voltage immediately modulates the current from the LDO and a better regulation in fast load transient is achieved. www.austriamicrosystems.com/LDOs/AS1372 Revision 1.01 11 - 14 AS1372 Datasheet - P a c k a g e D r a w i n g s a n d M a r k i n g s 10 Package Drawings and Markings The device is available in a 5-bumps CS-WLP package. Figure 21. 5-bumps CS-WLP Package www.austriamicrosystems.com/LDOs/AS1372 Revision 1.01 12 - 14 AS1372 Datasheet - O r d e r i n g I n f o r m a t i o n 11 Ordering Information The device is available as the standard products listed in Table 4. Table 4. Ordering Information Ordering Code AS1372-BWLT-07 Marking Output Description *) 0.7V 350mA Dual Rail Linear Regulator Delivery Form Package Tape and Reel 5-bumps CS-WLP AS1372-BWLT-10 ASSN 1.0V 350mA Dual Rail Linear Regulator Tape and Reel 5-bumps CS-WLP AS1372-BWLT-12 ASSQ 1.2V 350mA Dual Rail Linear Regulator Tape and Reel 5-bumps CS-WLP AS1372-BWLT-13 ASSO 1.3V 350mA Dual Rail Linear Regulator Tape and Reel 5-bumps CS-WLP AS1372-BWLT-14 *) 1.4V 350mA Dual Rail Linear Regulator Tape and Reel 5-bumps CS-WLP AS1372-BWLT-15 ASSR 1.5V 350mA Dual Rail Linear Regulator Tape and Reel 5-bumps CS-WLP AS1372-BWLT-16 *) 1.6V 350mA Dual Rail Linear Regulator Tape and Reel 5-bumps CS-WLP AS1372-BWLT-18 ASSS 1.8V 350mA Dual Rail Linear Regulator Tape and Reel 5-bumps CS-WLP AS1372-BWLT-20 *) 2.0V 350mA Dual Rail Linear Regulator Tape and Reel 5-bumps CS-WLP AS1372-BWLT-24 *) 2.4V 350mA Dual Rail Linear Regulator Tape and Reel 5-bumps CS-WLP AS1372-BWLT-28 *) 2.8V 350mA Dual Rail Linear Regulator Tape and Reel 5-bumps CS-WLP AS1372-BWLT-30 *) 3.0V 350mA Dual Rail Linear Regulator Tape and Reel 5-bumps CS-WLP AS1372-BWLT-33 *) 3.3V 350mA Dual Rail Linear Regulator Tape and Reel 5-bumps CS-WLP *) on request Non-standard devices from 0.5V to 1.1V are available in 50mV steps and from 1.1V to 2.2V in 100mV steps. For more information and inquiries contact http://www.austriamicrosystems.com/contact Note: All products are RoHS compliant and Pb-free. Buy our products or get free samples online at ICdirect: http://www.austriamicrosystems.com/ICdirect For further information and requests, please contact us mailto:[email protected] or find your local distributor at http://www.austriamicrosystems.com/distributor www.austriamicrosystems.com/LDOs/AS1372 Revision 1.01 13 - 14 AS1372 Datasheet Copyrights Copyright © 1997-2010, austriamicrosystems AG, Tobelbaderstrasse 30, 8141 Unterpremstaetten, Austria-Europe. Trademarks Registered ®. All rights reserved. The material herein may not be reproduced, adapted, merged, translated, stored, or used without the prior written consent of the copyright owner. All products and companies mentioned are trademarks or registered trademarks of their respective companies. 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