PD - 96131A
IRFS4227PbF
IRFSL4227PbF
PDP SWITCH
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low E PULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low QG for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for
Robustness and Reliability
Key Parameters
VDS max
200
V
VDS (Avalanche) typ.
240
RDS(ON) typ. @ 10V
22
V
m:
IRP max @ TC= 100°C
130
A
TJ max
175
°C
D
D
D
S
D
G
G
S
D
G
D2Pak
IRFS4227PbF
S
TO-262
IRFSL4227PbF
G
D
S
Gate
Drain
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain, Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to
achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are
175°C operating junction temperature and high repetitive peak current capability. These features
combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications
Absolute Maximum Ratings
Parameter
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
TJ
TSTG
Max.
Units
±30
62
V
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
c
Repetitive Peak Current
Power Dissipation
44
260
g
A
130
330
W
190
2.2
Power Dissipation
Linear Derating Factor
W/°C
-40 to + 175
Operating Junction and
Storage Temperature Range
°C
300
10lbf in (1.1N m)
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
x
x
N
Thermal Resistance
Parameter
f
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient (PCB Mounted) D2Pak
h
Typ.
–––
Max.
0.45*
–––
40
Units
* RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes through are on page 8
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1
12/06/08
IRFS/SL4227PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
200
–––
–––
170
–––
–––
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
3.0
22
–––
26
5.0
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
-13
–––
–––
20
Gate-to-Source Forward Leakage
–––
–––
–––
–––
200
100
Gate-to-Source Reverse Leakage
Forward Transconductance
–––
49
–––
–––
-100
–––
Total Gate Charge
Gate-to-Drain Charge
–––
–––
70
23
98
–––
Turn-On Delay Time
Rise Time
–––
–––
33
20
–––
–––
Turn-Off Delay Time
Fall Time
–––
–––
21
31
–––
–––
Shoot Through Blocking Time
100
–––
–––
–––
570
–––
–––
910
–––
Input Capacitance
–––
4600
–––
Output Capacitance
Reverse Transfer Capacitance
–––
–––
460
91
–––
–––
Effective Output Capacitance
Internal Drain Inductance
–––
–––
360
4.5
–––
–––
BVDSS
∆ΒVDSS/∆TJ
RDS(on)
IGSS
gfs
Qg
Qgd
td(on)
tr
td(off)
tf
tst
EPULSE
Ciss
Coss
Crss
Coss eff.
LD
Energy per Pulse
VGS = 0V, ID = 250µA
V
mV/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 46A
e
V
Internal Source Inductance
–––
7.5
VDS = VGS, ID = 250µA
mV/°C
µA VDS = 200V, VGS = 0V
µA VDS = 200V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S
VDS = 25V, ID = 46A
VDD = 100V, ID = 46A, VGS = 10V
nC
e
e
VDD = 100V, VGS = 10V
ns
ID = 46A
RG = 2.5Ω
ns
µJ
pF
See Fig. 22
VDD = 160V, VGS = 15V, RG= 4.7Ω
L = 220nH, C= 0.4µF, VGS = 15V
VDS = 160V, RG= 4.7Ω, TJ = 25°C
L = 220nH, C= 0.4µF, VGS = 15V
VDS = 160V, RG= 4.7Ω, TJ = 100°C
VGS = 0V
VDS = 25V
ƒ = 1.0MHz,
VGS = 0V, VDS = 0V to 160V
Between lead,
nH
LS
Conditions
–––
D
6mm (0.25in.)
from package
and center of die contact
G
S
Avalanche Characteristics
Typ.
Max.
Units
Single Pulse Avalanche Energy
–––
140
mJ
Repetitive Avalanche Energy
Repetitive Avalanche Voltage
–––
240
46
–––
mJ
–––
37
A
Parameter
EAS
EAR
VDS(Avalanche)
IAS
Avalanche Current
d
d
c
c
V
Diode Characteristics
Parameter
IS @ TC = 25°C Continuous Source Current
ISM
VSD
trr
Qrr
2
(Body Diode)
Pulsed Source Current
c
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
Typ. Max. Units
–––
–––
62
–––
–––
260
Conditions
MOSFET symbol
A
–––
–––
1.3
V
–––
–––
100
430
150
640
ns
nC
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 46A, VGS = 0V
TJ = 25°C, IF = 46A, VDD = 50V
e
di/dt = 100A/µs
e
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IRFS/SL4227PbF
1000
VGS
15V
10V
8.0V
7.0V
BOTTOM
100
7.0V
10
BOTTOM
100
7.0V
10
≤ 60µs PULSE WIDTH
Tj = 25°C
0.1
1
≤ 60µs PULSE WIDTH
Tj = 175°C
1
0.1
10
Fig 1. Typical Output Characteristics
10
Fig 2. Typical Output Characteristics
1000.0
4.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current(Α)
1
VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
VDS = 25V
≤ 60µs PULSE WIDTH
100.0
TJ = 175°C
10.0
1.0
TJ = 25°C
0.1
3.0
4.0
5.0
6.0
7.0
ID = 46A
VGS = 10V
3.0
2.0
1.0
0.0
8.0
-60 -40 -20
VGS, Gate-to-Source Voltage (V)
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
1000
1000
L = 220nH
C = 0.4µF
100°C
25°C
800
L = 220nH
C = Variable
100°C
25°C
800
Energy per pulse (µJ)
900
Energy per pulse (µJ)
VGS
15V
10V
8.0V
7.0V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
700
600
500
400
300
600
400
200
200
0
100
110
120
130
140
150
160
170
VDS, Drain-to -Source Voltage (V)
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
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130
140
150
160
170
180
190
ID, Peak Drain Current (A)
Fig 6. Typical EPULSE vs. Drain Current
3
IRFS/SL4227PbF
1400
1000.0
L = 220nH
ISD, Reverse Drain Current (A)
Energy per pulse (µJ)
1200
C= 0.4µF
C= 0.3µF
C= 0.2µF
1000
800
600
400
200
100.0
TJ = 175°C
10.0
1.0
TJ = 25°C
VGS = 0V
0
25
50
75
100
125
0.1
150
0.2
Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
20
Coss = Cds + Cgd
Ciss
4000
Coss
2000
Crss
1
1.2
ID= 46A
VDS = 160V
VDS = 100V
VDS = 40V
16
12
8
4
10
100
0
1000
20
40
60
80
100
120
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
1000
70
ID, Drain-to-Source Current (A)
60
ID , Drain Current (A)
1.0
0
0
50
40
30
20
10
0
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1µsec
100
100µsec
10µsec
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
25
50
75
100
125
150
175
TC , CaseTemperature (°C)
Fig 11. Maximum Drain Current vs. Case Temperature
4
0.8
Fig 8. Typical Source-Drain Diode Forward Voltage
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
6000
0.6
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical EPULSE vs.Temperature
8000
0.4
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 12. Maximum Safe Operating Area
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0.16
EAS, Single Pulse Avalanche Energy (mJ)
()
RDS (on), Drain-to -Source On Resistance Ω
IRFS/SL4227PbF
ID = 46A
0.12
0.08
TJ = 125°C
0.04
TJ = 25°C
600
I D
8.5A
14A
BOTTOM 37A
TOP
500
400
300
200
100
0.00
0
5
6
7
8
9
10
25
VGS, Gate-to-Source Voltage (V)
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 13. On-Resistance Vs. Gate Voltage
Fig 14. Maximum Avalanche Energy Vs. Temperature
5.0
200
ton= 1µs
Duty cycle = 0.25
Half Sine Wave
Square Pulse
4.5
4.0
Repetitive Peak Current (A)
VGS(th) Gate threshold Voltage (V)
50
ID = 250µA
3.5
3.0
2.5
160
120
80
40
2.0
1.5
0
-75 -50 -25
0
25
50
75
100 125 150 175
25
50
75
100
125
150
175
Case Temperature (°C)
TJ , Temperature ( °C )
Fig 16. Typical Repetitive peak Current vs.
Case temperature
Fig 15. Threshold Voltage vs. Temperature
Thermal Response ( ZthJC )
1
D = 0.50
0.20
0.1
0.10
0.05
τJ
0.02
0.01
0.01
R1
R1
τJ
τ1
R2
R2
τ2
τ1
τ2
Ci= τi/Ri
Ci i/Ri
R3
R3
τ3
τC
τ
τ3
Ri (°C/W) τi (sec)
0.08698 0.000074
0.2112
0.001316
0.1506
0.009395
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFS/SL4227PbF
D.U.T
Driver Gate Drive
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
di/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
VDD
+
-
Re-Applied
Voltage
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V
D.U.T
RG
VGS
20V
DRIVER
L
VDS
tp
+
V
- DD
IAS
tp
A
0.01Ω
I AS
Fig 19a. Unclamped Inductive Test Circuit
Fig 19b. Unclamped Inductive Waveforms
Id
Vds
Vgs
L
DUT
0
VCC
Vgs(th)
1K
Qgs1 Qgs2
Fig 20a. Gate Charge Test Circuit
6
Qgd
Qgodr
Fig 20b. Gate Charge Waveform
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IRFS/SL4227PbF
Fig 21b. tst Test Waveforms
Fig 21a. tst and EPULSE Test Circuit
Fig 21c. EPULSE Test Waveforms
V DS
V GS
RG
RD
VDS
90%
D.U.T.
+
-V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 22a. Switching Time Test Circuit
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10%
VGS
td(on)
tr
t d(off)
tf
Fig 22b. Switching Time Waveforms
7
IRFS/SL4227PbF
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
7+,6,6$1,5)6:,7+
/27&2'(
$66(0%/('21::
,17+($66(0%/</,1(/
1RWH3LQDVVHPEO\OLQH
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OR
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5(&7,),(5
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$ $66(0%/<6,7(&2'(
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRFS/SL4227PbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
(;$03/( 7+,6,6$1,5//
/27&2'(
$66(0%/('21::
,17+($66(0%/</,1(&
,17(51$7,21$/
5(&7,),(5
/2*2
$66(0%/<
/27&2'(
3$57180%(5
'$7(&2'(
<($5 :((.
/,1(&
25
,17(51$7,21$/
5(&7,),(5
/2*2
$66(0%/<
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3$57180%(5
'$7(&2'(
3 '(6,*1$7(6/($')5((
352'8&7 237,21$/
<($5 :((.
$ $66(0%/<6,7(&2'(
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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9
IRFS/SL4227PbF
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.2mH, RG = 25Ω, IAS = 37A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Rθ is measured at TJ of approximately 90°C.
Half sine wave with duty cycle = 0.25, ton=1µsec.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 12/2008
10
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