APTM50SKM35T Buck Chopper MOSFET Power Module VBUS NTC2 Q1 G1 OUT S1 0/VBUS SENSE 0/VBU S 0/VBUS SENSE VBUS S1 G1 0/VBUS 0/VBUS SENSE NTC1 OUT OUT NTC2 NTC1 VDSS = 500V RDSon = 35mW max @ Tj = 25°C ID = 99A @ Tc = 25°C Application · AC and DC motor control · Switched Mode Power Supplies Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged · Kelvin source for easy drive · Very low stray inductance - Symmetrical design - Lead frames for power connections · Internal thermistor for temperature monitoring · High level of integration Benefits · Outstanding performance at high frequency operation · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Solderable terminals both for power and signal for easy PCB mounting · Low profile Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 99 74 396 ±30 35 781 51 50 3000 Unit V A V mW W A May, 2004 ID Parameter Drain - Source Breakdown Voltage mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM50SKM35T – Rev 2 Symbol VDSS APTM50SKM35T All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Test Conditions VGS = 0V, ID = 375µA Min 500 Typ Tj = 25°C Zero Gate Voltage Drain Current VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 10V, ID = 49.5A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Tj = 125°C 3 Max Unit V 150 750 35 5 ±150 mW V nA Max Unit µA Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 250V ID = 99A Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v nF nC 80 140 21 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 99A RG = 1W Rise Time Typ 14 2.8 0.2 280 38 ns 75 93 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 99A, RG = 1Ω 2070 µJ 1690 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 99A, RG = 1Ω 3112 µJ 2026 Diode ratings and characteristics Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 120A VR = 400V di/dt = 400A/µs IF = 120A VR = 400V di/dt = 400A/µs Min Tj = 125°C Typ 120 1.6 1.9 1.4 Tj = 25°C 130 Tj = 125°C 170 Tj = 25°C 440 Tj = 125°C 1840 Tc = 70°C Max Unit A 1.8 V ns May, 2004 VF Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A nC u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. APT website – http://www.advancedpower.com 2–6 APTM50SKM35T – Rev 2 Symbol Characteristic Maximum Average Forward Current IF(AV) APTM50SKM35T Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ Transistor Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink 2500 -40 -40 -40 Max 0.16 0.46 Unit °C/W V 150 125 100 4.7 160 M5 °C N.m g Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K RT = Min Typ 68 4080 Max Unit kW K R 25 é æ 1 1 öù T: Thermistor temperature - ÷÷ú RT: Thermistor value at T exp ê B25 / 85 çç è T25 T øû ë APT website – http://www.advancedpower.com 3–6 APTM50SKM35T – Rev 2 May, 2004 Package outline APTM50SKM35T Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.18 0.16 0.9 0.14 0.7 0.12 0.1 0.5 0.08 0.06 0.3 0.04 0.1 0.05 0.02 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics ID, Drain Current (A) 7V 200 6.5V 6V 100 0 0 5V 5 10 15 20 VDS, Drain to Source Voltage (V) 200 150 TJ=25°C 100 50 TJ=125°C 0 25 TJ=-55°C 2 4 6 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.1 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 250 0 120 Normalized to VGS=10V @ 49.5A 1.05 ID, DC Drain Current (A) VGS=10V 1 VGS=20V 0.95 0.9 100 80 60 40 20 0 20 40 60 80 100 ID, Drain Current (A) 120 25 50 75 100 125 TC, Case Temperature (°C) 150 May, 2004 0 APT website – http://www.advancedpower.com 4–6 APTM50SKM35T – Rev 2 ID, Drain Current (A) VGS=10&15V 300 8V 5.5V RDS(on) Drain to Source ON Resistance Transfert Characteristics 300 400 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 25 50 75 100 125 150 Maximum Safe Operating Area 1000 1.2 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 1.0 0.9 0.8 0.7 100 us limited by RDSon 100 1 ms 10 10 ms Single pulse TJ=150°C 100 ms 1 0.6 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ciss 10000 Coss 1000 Crss 100 10 10 20 30 40 VDS, Drain to Source Voltage (V) 50 14 ID=99A TJ=25°C 12 VDS=100V VDS=250V 10 VDS=400V 8 6 4 2 0 0 50 100 150 200 250 300 350 Gate Charge (nC) May, 2004 0 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) VGS=10V ID=49.5A APT website – http://www.advancedpower.com 5–6 APTM50SKM35T – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature RDS(on), Drain to Source ON resistance (Normalized) APTM50SKM35T APTM50SKM35T Rise and Fall times vs Current 160 70 140 td(off) VDS=333V RG=1Ω TJ=125°C L=100µH 60 50 40 30 VDS=333V RG=1Ω TJ=125°C L=100µH 120 tr and tf (ns) td(on) and td(off) (ns) Delay Times vs Current 80 td(on) 100 80 tr 60 40 20 20 0 10 0 20 40 60 80 100 120 140 160 0 20 ID, Drain Current (A) 10 VDS=333V RG=1Ω TJ=125°C L=100µH 5 4 3 Eon Switching Energy (mJ) Switching Energy (mJ) 40 60 80 100 120 140 160 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 6 Eoff 2 1 VDS=333V ID=99A TJ=125°C L=100µH 8 6 Eoff Eon 4 2 0 0 0 20 0 40 60 80 100 120 140 160 ID, Drain Current (A) IDR, Reverse Drain Current (A) 400 VDS=333V D=50% RG=1Ω TJ=125°C 350 300 250 200 150 100 50 0 20 30 40 50 60 70 ID, Drain Current (A) 80 90 10 15 20 25 Source to Drain Diode Forward Voltage 1000 100 TJ=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM50SKM35T – Rev 2 May, 2004 10 5 Gate Resistance (Ohms) Operating Frequency vs Drain Current 450 Frequency (kHz) tf