JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors MJE13003 TO-126 TRANSISTOR (NPN) FEATURES z Power Switching Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1 . BASE Value Unit 2. COLLECTOR VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 1.25 W Thermal Resistance from Junction to Ambient 100 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 0.1mA,IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA,IB=0 400 V Emitter-base breakdown voltage 6 V(BR)EBO IE=0.1mA,IC=0 Collector cut-off current ICBO VCB=600V,IE=0 100 V Collector cut-off current ICEO VCE=400V,IB=0 100 uA Emitter cut-off current IEBO VEB=7V,IC=0 10 uA uA hFE(1)* VCE=10V, IC=200mA 9 hFE(2) VCE=10V, IC=250μA 5 Collector-emitter saturation voltage VCE(sat)1 IC=200mA,IB=40mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=200mA,IB=40mA 1.1 V DC current gain fT tf tS* Transition frequency Fall time Storage time VCE=10V, IC=100mA,f=1MHz 40 5 MHz IC=100mA 0.5 IC=100mA 2 4 μs CLASSIFICATION of hFE(1) Range 9-15 15-20 20-25 25-30 30-35 35-40 CLASSIFICATION of tS Rank A1 A2 B1 B2 Range 2-2.5 2.5-3 3-3.5 3.5-4 www.cj-elec.com 1 B,Oct,2014 TO-126 Package Outline Dimensions Symbol A A1 b b1 c D E e e1 h L L1 P Φ www.cj-elec.com Dimensions In Millimeters Min Max 2.500 2.900 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 2.290 TYP 4.480 4.680 0.000 0.300 15.300 15.700 2.100 2.300 3.900 4.100 3.000 3.200 2 Dimensions In Inches Min Max 0.098 0.114 0.043 0.059 0.026 0.034 0.046 0.054 0.018 0.024 0.291 0.307 0.417 0.433 0.090 TYP 0.176 0.184 0.000 0.012 0.602 0.618 0.083 0.091 0.154 0.161 0.118 0.126 B,Oct,2014