IPAN70R750P7S MOSFET 700VCoolMOSªP7PowerTransistor PG-TO220FP CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcost sensitiveapplicationsinconsumermarketssuchascharger,adapter, lighting,TV,etc. ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof theartease-of-uselevel.Thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns. Drain Pin 2, Tab Features •ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss •Excellentthermalbehavior •IntegratedESDprotectiondiode •Lowswitchinglosses(Eoss) •Productvalidationacc.JEDECStandard Gate Pin 1 Source Pin 3 Benefits •Costcompetitivetechnology •Lowertemperature •HighESDruggedness •Enablesefficiencygainsathigherswitchingfrequencies •Enableshighpowerdensitydesignsandsmallformfactors Potentialapplications RecommendedforFlybacktopologiesforexampleusedinChargers, Adapters,LightingApplications,etc. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C 700 V RDS(on),max 0.75 Ω Qg,typ 8.3 nC ID,pulse 15.4 A Eoss @ 400V 0.9 µJ V(GS)th,typ 3 V ESD class (HBM) 1C Type/OrderingCode Package IPAN70R750P7S PG-TO 220 FullPAK Narrow Lead Final Data Sheet Marking 70S750P7 1 RelatedLinks see Appendix A Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPAN70R750P7S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPAN70R750P7S 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 6.5 4.0 A TC = 20°C TC = 100°C - 15.4 A TC=25°C - - 2.0 A measured with standard leakage inductance of transformer of 7µH dv/dt - - 100 V/ns VDS=0...400V Gate source voltage VGS -16 -30 - 16 30 V static; AC (f>1 Hz) Power dissipation Ptot - - 20.8 W TC=25°C Operating and storage temperature Tj,Tstg -40 - 150 °C - Continuous diode forward current IS - - 3.5 A TC=25°C IS,pulse - - 15.4 A TC = 25°C dv/dt - - 1 V/ns VDS=0...400V,ISD<=IS,Tj=25°C Maximum diode commutation speed dif/dt - - 50 A/µs VDS=0...400V,ISD<=IS,Tj=25°C Insulation withstand voltage VISO - - 2500 V Vrms, TC=25°C, t=1min Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Application (Flyback) relevant avalanche current, single pulse3) IAS MOSFET dv/dt ruggedness 2) Diode pulse current 4) Reverse diode dv/dt 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction Values Min. Typ. Max. RthJC - - 6.0 °C/W - Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded Thermal resistance, junction - ambient RthJA for SMD version - - - °C/W n.a. Soldering temperature, wavesoldering only allowed at leads - - 260 °C Tsold 1.6 mm (0.063 in.) from case for 10s 1) DPAK / IPAK equivalent. Limited by Tj max. Tj = 20°C. Maximum duty cycle D=0.5 Pulse width tp limited by Tj,max 3) Proven during verification test. For explanation please read AN - CoolMOSTM 700V P7. 4) VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 3 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPAN70R750P7S 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 3.50 V VDS=VGS,ID=0.07mA - 10 1 - µA VDS=700V,VGS=0V,Tj=25°C VDS=700V,VGS=0V,Tj=150°C - - 1 µA VGS=20V,VDS=0V Min. Typ. Max. V(BR)DSS 700 - Gate threshold voltage V(GS)th 2.50 Zero gate voltage drain current IDSS Gate-source leakage current incl. Zener IGSS diode Drain-source on-state resistance RDS(on) - 0.62 1.40 0.75 - Ω VGS=10V,ID=1.4A,Tj=25°C VGS=10V,ID=1.4A,Tj=150°C Gate resistance RG - 10 - Ω f=1MHz,opendrain Unit Note/TestCondition Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 306 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 5.1 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 13 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 150 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 12 - ns VDD=400V,VGS=13V,ID=1.0A, RG=5.3Ω Rise time tr - 5.0 - ns VDD=400V,VGS=13V,ID=1.0A, RG=5.3Ω Turn-off delay time td(off) - 60 - ns VDD=400V,VGS=13V,ID=1.0A, RG=5.3Ω Fall time tf - 27 - ns VDD=400V,VGS=13V,ID=1.0A, RG=5.3Ω Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 1.3 - nC VDD=400V,ID=1.0A,VGS=0to10V Gate to drain charge Qgd - 2.9 - nC VDD=400V,ID=1.0A,VGS=0to10V Gate charge total Qg - 8.3 - nC VDD=400V,ID=1.0A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=400V,ID=1.0A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 4 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPAN70R750P7S Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=1.5A,Tj=25°C 200 - ns VR=400V,IF=1.0A,diF/dt=50A/µs - 0.7 - µC VR=400V,IF=1.0A,diF/dt=50A/µs - 8 - A VR=400V,IF=1.0A,diF/dt=50A/µs Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 5 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPAN70R750P7S 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 30 25 1 µs 101 10 µs 100 µs 20 1 ms ID[A] Ptot[W] 100 15 10 ms 10 -1 10 DC 10-2 5 0 0 25 50 75 100 125 10-3 150 100 101 102 TC[°C] 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 101 1 µs 0.5 10 µs 100 µs 0.2 ZthJC[K/W] 100 ID[A] 1 ms 10 ms 10-1 100 0.1 0.05 0.02 DC 0.01 single pulse 10-2 10-3 100 101 102 103 10-1 10-5 10-4 10-3 VDS[V] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-2 10-1 100 tp[s] ZthJC=f(tP);parameter:D=tp/T 6 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPAN70R750P7S Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 20 16 20 V 10 V 18 20 V 14 8V 10 V 7V 16 8V 12 7V 6V 14 10 ID[A] ID[A] 12 6V 10 8 8 5.5 V 6 5.5 V 6 5V 4 5V 4 4.5 V 2 0 2 4.5 V 0 5 10 15 0 20 0 5 10 VDS[V] 15 ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 4.0 5V 5.5 V 6V 20 VDS[V] 1.8 6.5 V 1.6 3.5 1.4 3.0 1.2 2.5 RDS(on)[Ω] RDS(on)[Ω] 7V 10 V 2.0 1.0 98% 0.8 typ 1.5 0.6 1.0 0.4 0.5 0.0 0.2 0 2 4 6 8 10 12 14 16 18 0.0 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=1.4A;VGS=10V 7 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPAN70R750P7S Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 18 10 16 9 25 °C 8 14 7 12 VGS[V] ID[A] 6 10 150 °C 8 120 V 400 V 5 4 6 3 4 2 2 0 1 0 2 4 6 8 10 0 12 0 2 4 VGS[V] 6 8 10 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=1.0Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram13:Drain-sourcebreakdownvoltage 2 10 840 25 °C 125 °C 820 800 780 101 IF[A] VBR(DSS)[V] 760 100 740 720 700 680 660 640 620 10-1 0.0 0.5 1.0 1.5 2.0 600 -75 -50 -25 VSD[V] 25 50 75 100 125 150 175 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 0 VBR(DSS)=f(Tj);ID=1mA 8 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPAN70R750P7S Diagram14:Typ.capacitances Diagram15:Typ.Cossstoredenergy 4 10 2.0 1.8 103 1.6 Ciss 1.4 102 C[pF] Eoss[µJ] 1.2 Coss 101 1.0 0.8 0.6 Crss 100 0.4 0.2 10-1 0 100 200 300 400 500 0.0 0 VDS[V] 200 300 400 500 600 700 VDS[V] C=f(VDS);VGS=0V;f=250kHz Final Data Sheet 100 Eoss=f(VDS) 9 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPAN70R750P7S 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform Rg1 VDS Rg 2 IF Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 10 ID VDS Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPAN70R750P7S 6PackageOutlines DIMENSIONS A A1 A2 b b1 c D D1 E e N L L1 Q MILLIMETERS MAX. 4.80 2.80 2.67 0.69 1.15 0.59 16.10 9.78 10.60 2.54 3 13.45 13.75 1.70 1.90 3.00 3.20 3.25 3.45 DOCUMENT NO. Z8B00180155 MIN. 4.60 2.60 2.47 0.56 1.01 0.46 15.90 9.58 10.40 REVISION 04 SCALE 5:1 0 1 2 3 4 5mm EUROPEAN PROJECTION ISSUE DATE 07.11.2016 Figure1OutlinePG-TO220FullPAK-NarrowLead,dimensionsinmm-IndustrialGrade Final Data Sheet 11 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPAN70R750P7S 7AppendixA Table11RelatedLinks • IFXCoolMOSªP7Webpage:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 12 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPAN70R750P7S RevisionHistory IPAN70R750P7S Revision:2018-02-13,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2017-09-15 Release of final version 2.1 2018-02-13 Corrected front page text TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.1,2018-02-13