Email: [email protected] Website: www.olitech-elec.com Plastic-Encapsulate Transistors BC546/BC547/BC548 (NPN) FEATURES • High Voltage • Complement to BC556,BC557,BC558 1. COLLECTO TO-92 2. BASE 3. EMITTER Maximum Ratings (Ta=25 unless otherwise noted) Symbol VCBO VCEO VEBO Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Value Unit BC546 80 BC547 50 BC548 30 BC546 65 BC547 45 BC548 30 BC546 6 V BC547 6 V BC548 5 V V V IC Collector Current-Continuous 0.1 A PC Collector Power Dissipation 625 mW Thermal Resistance from Junction to Ambient 200 /W Tj Junction Temperature 150 Tstg Storage Temperature RθJA OLITECH ELECTRONICS CO. LTD. -55~+150 Page:P4 -P1 Email: [email protected] Website: www.olitech-elec.com Plastic-Encapsulate Transistors BC546/BC547/BC548 ELECTRICAL CHARACTERISTICS ( @ Ta=25 Parameter unless otherwise specified) Symbol Test conditions Min BC546 Collector-base breakdown voltage Collector-emitter breakdown voltage V(BR)CBO BC547 IC= 0.1mA,IE=0 BC548 30 BC546 65 V(BR)CEO BC547 IC=1mA,IB=0 V 45 30 6 V(BR)EBO BC547 IE=10μA,IC=0 V 6 BC548 5 VCB=70V,IE=0 0.1 μA VCB=50V,IE=0 0.1 μA BC548 VCB=30V,IE=0 0.1 μA BC546 VCE=60V,IB=0 0.1 μA VCE=45V,IB=0 0.1 μA VCE=30V,IB=0 0.1 μA VEB=5V,IC=0 0.1 μA BC546 Collector cut-off current Unit V 50 BC546 Collector cut-off current Max 80 BC548 Emitter-base breakdown voltage Typ ICBO BC547 ICEO BC547 BC548 Emitter cut-off current IEBO DC current gain hFE * VCE=5V, IC=2mA 110 800 Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA,IB=5mA 1.1 V 0.7 V VCE=5V, IC=10mA 0.75 V 4.5 pF VBE Base-emitter voltage 0.58 VCE=5V, IC=2mA Collector output capacitance Cob VCB=10V,IE=0, f=1MHz Transition frequency fT VCE=5V,IC=10mA, f=100MHz 150 MH CLASSIFICATION of hFE RANK RANGE A B 110-220 200-450 C 420-800 Page:P4 -P2 OLITECH ELECTRONICS CO. LTD. Email: [email protected] Website: www.olitech-elec.com Plastic-Encapsulate Transistors BC546/BC547/BC548 Typical Characteristics 1.0 VCE = 10 V TA = 25°C 1.5 0.8 1.0 0.8 0.6 0.4 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.5 50 1.0 20 2.0 5.0 10 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 Figure 1. Normalized DC Current Gain 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) −55°C to +125°C 1.2 1.6 2.0 2.4 2.8 20 Cib Cob 2.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances 20 40 f, T CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) TA = 25°C 3.0 1.0 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 100 Figure 4. Base−Emitter Temperature Coefficient 10 5.0 50 70 100 1.0 Figure 3. Collector Saturation Region 7.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) Figure 2. “Saturation” and “On” Voltages θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR−EMITTER VOLTAGE (V) VBE(sat) @ IC/IB = 10 0.7 0.2 0.3 0.2 C, CAPACITANCE (pF) TA = 25°C 0.9 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 50 Figure 6. Current−Gain − Bandwidth Product Page:P4 -P3 OLITECH ELECTRONICS CO. LTD. Email: [email protected] Website: www.olitech-elec.com Plastic-Encapsulate Transistors BC546/BC547/BC548 Typical Characteristics TA = 25°C VCE = 5 V TA = 25°C 0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) 1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.2 0.5 1.0 2.0 TA = 25°C 1.6 20 mA 50 mA 100 mA 200 mA 1.2 IC = 10 mA 0.8 0.4 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 20 Cib 10 6.0 Cob 0.2 0.5 5.0 1.0 2.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance 50 100 200 −1.4 −1.8 VB for VBE 50 −55°C to 125°C −2.2 −2.6 −3.0 f, T CURRENT−GAIN − BANDWIDTH PRODUCT C, CAPACITANCE (pF) TA = 25°C 0.1 200 0.2 0.5 10 20 5.0 1.0 2.0 IC, COLLECTOR CURRENT (mA) Figure 10. Base−Emitter Temperature Coefficient 40 2.0 100 −1.0 Figure 9. Collector Saturation Region 4.0 50 Figure 8. “On” Voltage θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) 100 500 VCE = 5 V TA = 25°C 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) Figure 12. Current−Gain − Bandwidth Product Page:P4 -P4 OLITECH ELECTRONICS CO. LTD.