BILIN K2500G Sidac Datasheet

BL GALAXY ELECTRICAL
KG --- SERIES
SIDAC
VBO: 95 - 280 Volts
General Description
◇ A sidac is a silicon bilateral voltage triggered switch,
with greater power-handling capabilities than
standard diacs. Upon application of a voltage
exceeding the Sidac breakover voltage point, the Sidac
switches on, through a negative resistance region, to a
a low on-state voltage. Conduction will continue until
the current is interrupted or drops below the minimum
holding current of the device.
◇ Switching voltages in the range of 95 V to 330 V.
◇ Sidacs feature glass-passivated junctions that ensure
long term reliability and stable characteristics by
creating a rugged, reliable barrier against junction
contamination.
Variations
of devices covered in this data sheet are
◇
available for custom design applications. Please
consult the factory for more information.
Type
IT(RMS) VDRM
VBO
(7) (8)
(1)
A
V
MAX
MIN
MIN
K1050G
1
±90
K1100G
1
K1200G
IDRM
DO - 15
Dimensions in millimeters
IBO
IH
VTM
(3) (4)
V
mA
V
ITSM
RS
(5)
(9)
A
kΩ V/µSec A/µSec
µA
µA
MAX
MAX
MAX
TYP
MAX
Max
95
113
5
10
60
150
1.5
20
16.7
±90
104
118
5
10
60
150
1.5
20
1
±90
110
125
5
10
60
150
1.5
K1300G
1
±90
120
138
5
10
60
150
K1400G
1
±90
130
146
5
10
60
K1500G
1
±90
140
170
5
10
K2000G
1
±180
190
215
5
K2200G
1
±180
205
230
K2400G
1
±190
220
K2500G
1
±200
K2501G
1(10)
±200
60Hz 50Hz MIN
dv/dt
di/dt
MIN
TYP
0.1
1500
150
16.7
0.1
1500
150
20
16.7
0.1
1500
150
1.5
20
16.7
0.1
1500
150
150
1.5
20
16.7
0.1
1500
150
60
150
1.5
20
16.7
0.1
1500
150
10
60
150
1.5
20
16.7
0.1
1500
150
5
10
60
150
1.5
20
16.7
0.1
1500
150
250
5
10
60
150
1.5
20
16.7
0.1
1500
150
240
280
5
10
60
150
1.5
20
16.7
0.1
1500
150
240
280
5
75
60
150
6
20
16.7
0.1
1500
150
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Document Number 0290001
BLGALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
KG --- SERIES
FIG.1-- PEAK SURGE CURRENT vs SURGE CURRENT
FFFFFFFF DURATION
V-I CHARACTERISTICS
+I
RS
IH
IS
IDRM
-V
IBO
+V
VS
VT
RS
(VBO-VS)
(IS-IBO)
VBO
VDRM
Peak Surge (NonRepetitive)
On-State Current [ITSM] - Amps
100
IT
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT: IT RMS Maximum Rated
Value at Specified Junction Temperature
40
20
10
8.0
6.0
4.0
2.0
1.0
BLOCKING CAPABILITY MAY BE LOST
DURING AND IMMEDIATELY
FOLLOWING SURGE CURRENT
INTERVAL
OVERLOAD MAY NOT BE REPEATED
UNTIL JUNCTION TEMPERATURE
HAS RETURNED TO STEADY-STATE
RATED VALUE.
1.0
10
100
1000
Surge Current Duration - Full Cycles
Specific Test Conditions
Electrical Specification Notes
di/dt — Critical rate-of-rise of on-state current
(1) See Figure 9.5 for VBO change vs junction temperature.
dv/dt — Critical rate-of-rise of off-state voltage at rated VDRM; TJ ≤
(2) See Figure 9.6 for IBO vs junction temperature.
(3) See Figure 9.2 for IH vs case temperature.
100°C
IBO — Breakover current 50/60 Hz sine w ave
(4) See Figure 9.13 for test circuit.
IDRM — Repetitive peak off-state current 50/60 Hz sine w ave; V = VDRM
(5) See Figure 9.1 for more than one full cycle rating.
IH — Dynamic holding current 50/60 Hz sine w ave; R = 100Ω
(6) RθJA Type 41 is 70° C/W.
IT(RMS) — On-state RMS current TJ ≤ 125°C 50/60 Hz sine w ave
(7) TL ≤ 100°C
ITSM — Peak one cycle surge current 50/60 Hz sine w ave (nonrepetitive)
(8) See Figure 9.14 for clarification of Sidac operation.
RS — Sw itching resistance
RS=
(VBO-VS)
(IS-IBO)
50/60 Hz sine w ave
(9) For best Sidac operation, the load impedance should be near or
less than sw itching resistance.
VBO — Breakover voltage 50/60 Hz sine w ave
VDRM — Repetitive peak off-state voltage
VTM — Peak on-state voltage, IT = 1 Amp
General Notes
◇ All measurements are made at 60Hz w ith a resistive load at an
ambient temperature of +25°C unless otherw ise specified.
◇ Storage temperature range (TS) is -65°C to +150°C.
◇ The case (TC) or lead (TL) temperature is measured as show n on
the dimensional outline draw ings. See “Package Dimensions” section
of this catalog.
◇ Junction temperature range (TJ) is -40°C to +125°C.
◇ Lead solder temperature is a maximum of +230°C for 10 seconds
maximum; ≥ 1/16" (1.59mm) from case.
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Document Number 0290001
BLGALAXY ELECTRICAL
2.
RATINGS AND CHARACTERISTIC CURVES
Ratio of
IH
IH(TC=25° C)
2.0
1.5
1.0
.5
0
-40
-15
+25
+65
FIG.3-- REPETITIVE PEAK ON-STATE CURRENT (ITRM)
GGGGvs PULSE WIDTH at VARIOUS FREQUENCIES
Repetitive Peak On-State Current (ITRM) - Amps
FIG.2 -- NORMALIZED DC HOLDING CURRENT vs
FFFFFFFFFFF CASE/LEAD TEMPERATURE
KG --- SERIES
+105 +125
Case Temperature (TC) - ° C
di/dt Limit Line
600
400
ITRM
VBO Firing
No
nCurrent
to
Re
pe
ate Waveform
Re
l/f
d
pe
t
i
t
f=10
ion
kHz
Fr
e
qu
f=100
en
kHz
cy
f=5
Hz
f=1 k
Hz
TJ=125o C Max
200
100
80
60
40
20
10
8
6
4
f=5
kH
z
f=1
0k
Hz
f=20
kHz
2
1
0.8
0.6
4
2 x 10-3
68
2
1 x 10-2
4
68
2
1 x 10-1
4
6 81
Pulse base width (to) - mSec.
FIG.5 -- NORMALIZED VBO CHANGE vs JUNCTION
JJJJJJJJJJJ TEMPERATURE
+4
140
Percentage of VBO Change - %
Maximum Allowable Ambient Temperature (T A) - ° C
FIG.4 -- MAXIMUM ALLOWABLE AMBIENT
FFFFFFFFFF FFTEMPERATURE vs ON-STATE CURRENT
CURRENT WAVEFORM: Sinusoidal - 60 Hz
LOAD: Resistive or Inductive
FREE AIR RATING
120
100
80
DO
-15
x
60
40
26
20
0
0.2
0.4
0.6
0.8
+2
0
-2
-4
-6
-8
-10
-12
1.0
-40
RMS On-State Current [IT(RMS)] - Amps
FIG.6 -- NORMALIZED REPETITIVE PEAK BREAKOVER
CURRENT vs JUNCTION TEMPERATURE
2
1
20
30
40
50
60 70 80 90 100 110120 130
Junction Temperature (TJ) - ° C
+25
+20
+40
+60
+80
+100
+120
+140
FIG.7 -- ON-STATE CURRENT vs ON-STATE VOLTAGE
GGGGGGG(TYPICAL)
Positive or Negative Instantaneous
On-State Current (iT) - Amps
Repetitive Peak Breakover
Current (IBO) Multiplier
V=VBO
0
Junction Temperature (TJ) - ° C
9
9
8
7
6
5
4
3
-20
TL =25° C
8
7
6
5
4
3
2
1
0
Kxx01G
0
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6
Positive or Negative Instantaneous On-State Voltage (VT) - Volts
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3.
RATINGS AND CHARACTERISTIC CURVES
FIG.8 -- POWER DISSIPATION (TYPICAL) vs ON-STATE
MMMMMMMM CURRENT
FIG.9 -- COMPARISON OF SIDAC vs SCR
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: See Figure 9.15
2.2
Average On-State Power Dissipation
[PD(AV)] - Watts
KG --- SERIES
2.0
1.8
1.6
SCR
SIDAC
1.4
100-250
VAC
60 Hz
Kxx01G
1.2
1.0
100-250
VAC
60 Hz
0.8
0.6
0.4
0.2
0.2
0
0.4
0.6
0.8
1.0
RMS On-State Current [IT(RMS)] - Amps
FIG.10 -- LGNITOR CIRCUIT (LOW VOLTAGE INPUT)
FIG.11 -- TYPICAL HIGH PRESSURE SODIUM
LAMP FIRING CIRCUIT
4.7μF
10μF
-
BALLAST
BALLAST
+
100V
4.7 kΩ
+
50V
+
-
4.7μF
100V
SIDAC
K1200E
SIDAC
1/2W
3.3 kΩ
200V
1.2μF
SIDAC
0.47μF
400V
0.22μF
7.5 kΩ
LAMP
LAMP
24 VAC
60 Hz
120 VAC
60 Hz
220 VAC
60 Hz
16 mH
H.V.
IGNITOR
FIG.13 -- DYNAMIC HOLDING CURRENT TEST
CIRCUIT FOR SIDACS
FIG.12 -- XENON LAMP FLASHING CIRCUIT
10μF
100Ω
2W
K2200G
+
-
120VAC
60Hz
PUSH
TO
TEST
XENON LAMP
+
250V
10μF
450V
220 VAC
120 VAC
20MΩ
S1
SWITCH TO TEST IN
EACH DIRECTION
4KV
IPK
SIDAC .01μF
400V
200400V
100-250
VAC
60 Hz
100Ω
1%
TRACE STOPS
IH
SCOPE INDICATIONS
S1
TRIGGER
TRANSFORMER
20:1
DEVICE
UNDER
TEST
SCOPE
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4.
RATINGS AND CHARACTERISTIC CURVES
KG --- SERIES
FIG.14 -- BASIC SIDAC CIRCUIT
VBO
VBO
VBO
100-250
VAC
60Hz
LOAD
IH
IH
IH
120-145°
CONDUCTION
ANGLE
LOAD CURRENT
FIG.15 -- RELAXATION OSCILLATOR USING a SIDAC
(b) Waveforms
(a) Circuit
VBO
R
SIDAC
VDC(IN) ≥VBO
Vc
VC
C
IL
t
IL
RL
t
Rmax≤
Rmin≥
VIN-VBO
IBO
VIN-VTM
IH(MIN)
FIG.16 -- SIDAC ADDED TO PROTECT TRANSISTOR FOR TYPICAL TRANSISTOR INDUCTIVE
VVVVVVVVVVVVVVVVVLOAD SWITCHING REQUIREMENTS
VCE MONITOR
INPUT
VOLTAGE
tw≈3 ms
(See Note A)
0V
tw
(See Note B)
5V
2N6127
(or equivalent)
INPUT
COLLECTOR
CURRENT
100mH
RBB1=150Ω
TIP-47
100 mS
0.63 A
0
50Ω
IC MONITOR
VCC=20V
-
VBB1=10V
SIDAC VBO
+
RBB2=100Ω
50Ω
COLLECTOR
CURRENT
VBB2=0
+
RS=0.1Ω
10 V
VCE(sat)
TEST CIRCUIT
VOLTAGE AND CURRENT WAVEFORMS
NOTE A: Input pulse width is increased until ICM = 0.63A.
NOTE B: Sidac (or Diac or series of Diacs) chosen so that VBO is just below VCEO rating of transistor to be protected.
The Sidac (or Diac) eliminates a reverse breakdown of the transistor in inductive switching circuits where otherwise the
transistor could be destroyed.
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5.
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