, Line. SILICON PLANAR ZENER DIODES BZX85C 2V7 to 51V DO-41 1.3W These Zeners Are Best Suited For Industrial Purpose, Military & Space Applications. When Hermetically Sealed in Glass With Double Stud. This Passivated Chip Provides Excellent Stability & Reliability. ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C) DESCRIPTION SYMBOL VALUE Power Dissipation (1) PTA 1.3 Surge Power Dissipation pulse Width =10ms PS 10 Operating And Storage Junction Tj.Tstg -55to+175 Temperature Range TL Maximum Lead Temperature for Soldering 230 During 10 sec @ 4mm From Case Rth(j-a) Thermal Resistance Junction to Ambient (1) 115.4 Forward Voltage @ IF=200mA VF 1.0 11) On infinite heatsink with 4mm Lead Length ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless otherwise Specified) Device V2T IZT IZK Temp. Coeff rZT rZK VR IR @ @IZK @IZT* @IZT* of Zener Ta= Voltage typ 25 deg C ISOdegC min max max max max max (V) (V) (ohm) (mA) (ohm) (mA) (%/deg C) (uA) (uA) (V) -0.07 BZX85C 2V7 2.50 1.0 2.90 20 80 400 150 300 1.0 -0.07 BZX85C 3VO 2.80 80 1.0 100 3.20 20 400 300 1.0 80 BZX85C 3V3 3.10 400 -0.06 40 1.0 3.50 20 1.0 200 1.0 BZX85C 3V6 3.40 70 20 3.80 20 -0.06 50 500 1.0 BZX85C 3V9 3.70 4.10 15 1.0 -0.05 10 60 500 20 1.0 BZX85C 4V3 4.00 50 1.0 -0.03 4.60 13 500 3.0 10 1.0 BZX85C 4V7 4.40 5.00 13 3.0 45 1.0 -0.01 500 10 1.0 BZX85C 5V1 4.80 45 500 1.0 +0.01 5.40 10 1.0 10 1.5 7 1.0 BZX85C SV6 5.20 6.00 45 400 1.0 +0.03 10 2.0 +0.04 BZX85C 6V2 5.80 4 35 300 1.0 6.60 1.0 10 3.0 1.0 BZX85C 6V8 6.40 7.20 3.5 35 1.0 300 +0.05 10 4.0 3 35 0.5 BZX85C 7V5 7.00 7.90 200 +0.05 1.0 10 4.5 25 0.5 BZX85C 8V2 7.70 8.70 5 200 +0.06 1.0 10 6.2 BZX85C 9V1 8.50 25 200 0.5 1.0 9.60 5 +0.06 10 6.8 +0.07 9.40 10.60 25 200 0.5 BZX85C10 7.5 0.5 10 7.0 +0.07 20 300 0.5 BZX85C11 10.40 11.60 8 0.5 8.2 10 20 BZX85C 12 11.40 12.70 9 0.5 +0.07 0.5 10 350 9.1 +0.07 BZX85C13 20 400 0.5 0,5 10 12.40 14.10 10 10 15 0.5 0.5 11 500 +0.08 10 BZX85C 15 13.80 15.60 15 15 500 +0.08 BZX85C 16 15.30 17.10 15 0.5 0.5 10 12 0.5 16.80 19.10 20 15 500 0.5 +0.08 10 13 BZX85C18 10 600 0.5 +0.08 0.5 BZX85C 20 18.80 21.20 24 10 15 0.5 10 600 +0.08 0.5 BZX85C 22 20.80 23,30 25 10 16 10 600 0.5 +0.08 BZX85C 24 22.80 25.60 25 0.5 10 18 UNIT w w degC degC deg C/mW V IZM IZSM## (mA) (mA) 2874 2604 2381 2193 2033 1812 1667 1543 1389 1263 1157 1055 370 340 320 290 280 250 215 200 190 170 155 140 130 120 105 97 88 79 71 66 62 56 52 47 958 868 786 718 656 591 534 487 436 393 358 326 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors ELECTRICAL CHARACTERISTICS (Ta=2S deg C Unless otherwise Specified! rZK VZT rZT IZT IZK Temp. Coeff IR Device @ @IZK @IZT* @IZT* of Ta= Zener Voltage 25 deg C tSOdegC min max max max max max typ (V) (ohm) <mA) (ohm) (%/deg C) (V) (mA) (uA) (uA) BZX85C 27 8.0 750 0.25 +0.09 25.10 28.90 30 0.5 10 0.5 1000 0.25 +0.09 28.00 32.00 30 8.0 BZX85C 30 10 1000 0.25 31.00 35.00 35 8.0 +0.09 0.5 10 BZX85C 33 8.0 0.5 BZX85C 36 34.00 38.00 40 1000 0.25 +0.09 10 37.00 41.00 50 1000 0.25 +0.09 0.5 10 6.0 BZX85C 39 1000 0.25 0.5 40.00 46.00 50 6.0 +0.09 10 BZX85C 43 1500 0.25 4.0 0.5 44.00 50.00 90 +0.09 10 BZX85C 47 +0.09 0.5 BZX85C 51 4.0 1500 0.25 48.00 54.00 115 10 "Pulse Condition : 20ms <=tp<=50ms, Duty Cycle =2% ## Rectangular wave form (tp=10ms) VR IZM IZSM## <V) 20 22 24 27 30 33 36 39 (mA) (mA) 288 260 238 219 203 181 167 154 41 36 33 30 28 26 23 21 DO-41 Glass Axial Package « A •> ! •4 A >• T o t B t | MIN A 27.90 MAX ! | i 1 Q DIM NOTES 1 . Cathode is marked by Band. 2. All dimensions are in mm. B 4.06 5.51 C 0.71 0.87 D 2.03 2.72