HANBit HMS51232M4V/Z4V HAN SRAM MODULE 2Mbyte (512K x 32-Bit), 3.3V BIT Part No. HMS51232M4V, HMS51232Z4V GENERAL DESCRIPTION The HMS51232M4V/Z4V is a high-speed static random access memory (SRAM) module containing 524,288 words organized in a x32-bit configuration. The module consists of four 512K x 8 SRAMs mounted on a 72-pin, single-sided, FR4-printed circuit board. PD0 to PD3 identify the module’s density allowing interchangeable use of alternate density, industry- standard modules. Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module’s 4 bytes independently. Output enable(/OE) and write enable(/WE) can set the memory input and output. Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW. For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from a single +3.3V DC power supply and all inputs and outputs are fully LVTTL-compatible. PIN ASSIGNMENT FEATURES Access times : 10, 12 and 15ns High-density 2Mbyte design High-reliability, high-speed design Single + 3.3V ±0.3V power supply Easy memory expansion /CE and /OE functions All inputs and outputs are LVTTL-compatible Industry-standard pinout FR4-PCB design Part Identification NC NC PD2 PD3 Vss PD0 PD1 DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 Vcc A0 A7 A1 A8 A2 A9 DQ12 DQ4 DQ13 DQ5 DQ14 DQ6 DQ15 DQ7 Vss /WE A15 A14 /CE2 /CE1 - HMS51232M4V: SIMM design - HMS51232Z4V: ZIP design → Pin-compatible with the HMS51232M4V OPTIONS MARKING Timing 10ns access -10 12ns access -12 15ns access -15 Packages 72-pin SIMM M 72-pin ZIP Z /CE4 /CE3 A17 A16 /OE Vss DQ24 DQ16 DQ25 DQ17 DQ26 DQ18 DQ27 DQ19 A3 A10 A4 A11 A5 A12 Vcc A13 A6 DQ20 DQ28 DQ21 DQ29 DQ22 DQ30 DQ23 DQ31 Vss A18 NC NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 72-Pin SIMM TOP VIEW 1 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 PD0 = Open PD1 = Open PD2 = Open PD3 = Vss HANBit Electronics Co.,Ltd. HANBit HMS51232M4V/Z4V FUNCTIONAL BLOCK DIAGRAM 32 DQ0 - DQ31 A0 - A18 19 A0-18 DQ 0-7 /WE U1 /OE /CE /CE1 A0-18 DQ 8-15 /WE U2 /OE /CE /CE2 A0-18 DQ16-23 /WE U3 /OE /CE /CE3 A0-18 DQ24-31 /WE /WE /OE /OE U4 /CE PD0 = Open PD1 = Open PD2 = Open PD3 = Vss /CE4 TRUTH TABLE MODE /OE /CE /WE DQ POWER STANDBY X H X HIGH-Z STANDBY NOT SELECTED H L H HIGH-Z ACTIVE READ L L H Dout ACTIVE WRITE X L L Din ACTIVE 2 HANBit Electronics Co.,Ltd. HANBit HMS51232M4V/Z4V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -0.5V to +4.6V Voltage on Vcc Supply Relative to Vss VCC -0.5V to +4.6V Power Dissipation PD 4W TSTG -65oC to +150oC Voltage on Any Pin Relative to Vss Storage Temperature Operating Temperature TA 0oC to +70oC Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER * ( TA=0 to 70 o C ) SYMBOL MIN TYP. MAX Supply Voltage VCC 3.0V 3.3V 3.6V Ground VSS 0 0 0 Input High Voltage VIH 2.0 - Vcc+0.3V** Input Low Voltage VIL -0.5* - 0.8V VIL(Min.) = -2.0V (Pulse Width ≤ 10ns) for I ≤ 20 mA ** VIH(Min.) = Vcc+2.0V (Pulse Width ≤ 10ns) for I ≤ 20 mA DC AND OPERATING CHARACTERISTICS (1) (0oC ≤ TA ≤ 70 oC ; Vcc = 3.3V ± 0.3V, Unless otherwise specified) PARAMETER Input Leakage Current Output Leakage Current SYMBO L TEST CONDITIONS VIN = Vss to Vcc /CE=VIH or /OE =VIH or /WE=VIL VOUT=Vss to VCC MIN MAX UNITS ILI -2 2 µA IL0 -2 2 µA 2.4 Output High Voltage IOH = -4.0mA VOH Output Low Voltage IOL = 8.0mA VOL V 0.4 V * Vcc=3.3V, Temp=25 oC DC AND OPERATING CHARACTERISTICS (2) MAX DESCRIPTION Power Supply Current:Operating Power Supply Current:Standby TEST CONDITIONS Min. Cycle, 100% Duty /CE=VIL, VIN=VIH or VIL, IOUT=0mA SYMBOL -10 -12 -15 UNIT lCC 205 200 195 mA Min. Cycle, /CE=VIH lSB 50 50 50 mA f=0MHZ, /CE≥VCC-0.2V, VIN≥ VCC-0.2V or VIN≤0.2V lSB1 10 10 10 mA 3 HANBit Electronics Co.,Ltd. HANBit HMS51232M4V/Z4V CAPACITANCE DESCRIPTION TEST CONDITIONS SYMBOL MAX UNIT Input /Output Capacitance VI/O=0V CI/O 8 pF Input Capacitance VIN=0V CIN 7 pF * NOTE : Capacitance is sampled and not 100% tested AC CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 3.3V ± 0.3V, unless otherwise specified) TEST CONDITIONS PARAMETER VALUE Input Pulse Level 0 to 3V Input Rise and Fall Time 3ns Input and Output Timing Reference Levels 1.5V Output Load See below Output Load (B) for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ Output Load (A) VL=1.5V +3.3V 50Ω DOUT 319Ω DOUT Z0=50Ω 30pF 353Ω 5pF* READ CYCLE -10 PARAMETER -12 -15 SYMBOL UNIT MIN MAX MIN MAX MIN MAX Read Cycle Time tRC 10 - 12 - 15 - ns Address Access Time tAA - 10 - 12 - 15 ns Chip Select to Output tCO - 10 - 12 - 15 ns Output Enable to Output tOE - 5 - 6 - 7 ns Chip Enable to Low-Z Output tLZ 3 - 3 - 3 - ns Output Enable to Low-Z Output tOLZ 0 - 0 - 0 - ns Chip Disable to High-Z Output tHZ 0 5 0 6 0 7 ns Output Disable to High-Z Output tOHZ 0 5 0 6 0 7 ns 4 HANBit Electronics Co.,Ltd. HANBit HMS51232M4V/Z4V Output Hold from Address Change tOH 3 - 3 - 3 - ns Chip Select to Power Up Time tPU 0 - 0 - 0 - ns Chip Select to Power Down Time tPD - 15 - 12 - 15 ns WRITE CYCLE -10 PARAMETER -12 -15 SYMBOL UNIT MIN MAX MIN MAX MIN MAX Write Cycle Time tWC 10 - 12 - 10 - ns Chip Select to End of Write tCW 7 - 8 - 10 - ns Address Set-up Time tAS 0 - 0 - 0 - ns Address Valid to End of Write tAW 7 - 8 - 10 - ns Write Pulse Width (/OE High) tWP 7 - 8 - 10 - ns Write Pulse Width (/OE Low) tWP1 10 - 12 - 15 - ns Write Recovery Time tWR 0 - 0 - 0 - ns Write to Output High-Z tWHZ 0 5 0 6 0 7 ns Data to Write Time Overlap tDW 5 - 6 - 7 - ns Data Hold from Write Time tDH 0 - 0 - 0 - ns End of Write to Output Low-Z tOW 3 - 3 - 3 - ns TIMING DIAGRAMS See Part No. HMS51232M4/Z4 FUNCTIONAL DESCRIPTION /CE /WE /OE MODE I/O PIN SUPPLY CURRENT H X* X Not Select High-Z I SB, I SB1 L H H Output Disable High-Z ICC L H L Read DOUT ICC L L X Write DIN ICC Note: X means Don't Care 5 HANBit Electronics Co.,Ltd. HANBit HMS51232M4V/Z4V PACKAGING INFORMATION SIMM Design 108.20 mm 3.18 mm TYP(2x) 16 mm 6.35 mm 1 72 2.03 mm 1.02 mm 6.35 mm 1.27 mm 3.34 mm 95.25 mm 2.54 mm 0.25 mm MAX MIN 1.29±0.08mm Gold: 1.04±0.10 mm 1.27 Solder: 0.914±0.10 mm (Solder & Gold Plating Lead) ZIP Design 96.5 mm CUT 1.5 mm 19 mm 72 1 6 mm 46 mm 2.54 mm 1 mm 1 mm 97.79 mm 1.29±0.08 mm 2.54 6 HANBit Electronics Co.,Ltd. HANBit HMS51232M4V/Z4V ORDERING INFORMATION 1 2 3 HMS 4 5 6 7 8 9 512 32 M 4 V -15 3.3V 15ns Access Time HANBit Component Memory Modules SIMM x32bit SRAM 512K 1. - Product Line Identifier HANBit ------------------------------------------------------- H 2. - Memory Modules 3. - SRAM 4. - Depth : 512K 5. - Width : x 32bit 6. - Package Code SIMM ------------------------------------------------------- M ZIP ------------------------------------------------------- Z 7. - Number of Memory Components 8. - V : 3.3V 9. - Access time 10 ----------------------------------------------------------- 10ns 12 ----------------------------------------------------------- 12ns 15 ----------------------------------------------------------- 15ns 17 ----------------------------------------------------------- 17ns 20 ----------------------------------------------------------- 20ns 7 HANBit Electronics Co.,Ltd.