MMBT3906 -200 mA, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 Collector current capability IC=-200mA Collector-emitter voltage VCEO=-40V. APPLICATION A General switching and amplification. L 3 3 C B Top View PACKAGING DIMENSION 1 1 K 2 E 2 Collector D F G H J Base Emitter Millimeter REF. A MARKING Millimeter REF. Min. Max. 2.80 3.00 G Min. Max. 0.10 REF. B 2.25 2.55 H C 1.20 1.40 J 0.55 REF. D 0.90 1.15 K 0.5 REF. E 1.80 2.00 L 0.95 TYP. F 0.30 0.50 0.08 0.15 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector - Emitter Voltage VCEO -40 Vdc Collector - Base Voltage VCBO -40 Vdc Emitter - Base Voltage VEBO -5.0 Vdc IC -200 mAdc Collector Current - Continuous (1) Total Device Dissipation FR-5 Board , TA=25°C Total Device Dissipation FR-5 Board, Derate above 25°C Thermal Resistance, Junction to Ambient PD RθJA (2) Total Device Dissipation Alumina Substrate , TA=25°C Total Device Dissipation Alumina Substrate, Derate above 25°C Thermal Resistance, Junction to Ambien Junction, Storage Temperature http://www.SeCoSGmbH.com/ 30-Aug-2010 Rev. D PD 225 mW 1.8 mW/°C 556 °C / W 300 mW 2.4 mW/°C RθJA 417 °C / W TJ, TSTG -55 ~ +150 °C Any changes of specification will not be informed individually. Page 1 of 5 MMBT3906 -200 mA, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL MIN. MAX. UNIT TEST CONDITIONS OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (3) V(BR)CEO -40 - Vdc IC= -1mAdc, IB=0 Collector-Base Breakdown Voltage V(BR)CBO -40 - Vdc IC = -10μAdc, IE = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 - Vdc IE = -10μAdc, IC=0 Base Cut-Off Current IBL - -50 nAdc VCE= -30Vdc, VEB= -3.0Vdc Collector Cut-Off Current ICEX - -50 nAdc VCE= -30Vdc, VEB= -3.0Vdc ON CHARACTERISTICS DC Current Gain (3) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage (3) (3) hFE(1) 60 - IC= -0.1mAdc, VCE= -1Vdc hFE(2) 80 - IC= -1.0mAdc, VCE= -1Vdc hFE(3) 100 300 IC= -10mAdc, VCE= -1Vdc hFE(4) 60 - IC= -50mAdc, VCE= -1Vdc hFE(5) 30 - IC= -100mAdc, VCE= -1Vdc - -0.25 - -0.4 -0.65 -0.85 - -0.95 VCE(sat) VBE(sat) Vdc Vdc IC= -10mAdc, IB = -1mAdc IC = -50mAdc, IB = -5mAdc IC= -10mAdc, IB = -1mAdc IC = -50mAdc, IB = -5mAdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product fT 250 - MHz Output Capacitance Cobo - 4.5 pF VCB= -5.0Vdc, IE=0, f=1.0MHz Input Capacitance Cibo - 10 pF VEB= -0.5Vdc, IC=0, f=1.0MHz Input Impedance hie 2.0 12 kΩ Voltage Feedback Radio hre 0.1 10 x 10 Small-Signal Current Gain hfe 100 400 Output Admittance Hoe 3.0 60 Noise Figure NF - 4.0 IC= -10mAdc, VCE= -20Vdc, f=100MHz VCE= -10 Vdc, IC= -1.0mAdc, f=1.0kHz -4 VCE= -10 Vdc, IC= 1.0mAdc, f=1.0kHz VCE= -10 Vdc, IC= 1.0mAdc, f=1.0kHz μmhos VCE= -10 Vdc, IC= 1.0mAdc, f=-1.0kHz dB VCE= -5.0 Vdc, IC= -100μAdc, RS=1.0KΩ, f=1.0kHz SWITCHING CHARACTERISTICS Delay Time td - 35 Rise Time tr - 35 Storage Time ts - 225 Fall Time tf - 75 VCC=-3Vdc,VBE=0.5Vdc nS IC=-10mAdc, IB1 =-1mAdc VCC=-3Vdc, IC=-10mAdc,IB1= IB2=-1mAdc NOTE: 1. FR-5=1.0 x 0.75 x 0.062 in. 2. Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width ≦ 300μS, Duty Cycle ≦ 2.0% http://www.SeCoSGmbH.com/ 30-Aug-2010 Rev. D Any changes of specification will not be informed individually. Page 2 of 5 MMBT3906 Elektronische Bauelemente http://www.SeCoSGmbH.com/ 30-Aug-2010 Rev. D -200 mA, -40 V PNP Plastic Encapsulated Transistor Any changes of specification will not be informed individually. Page 3 of 5 MMBT3906 Elektronische Bauelemente http://www.SeCoSGmbH.com/ 30-Aug-2010 Rev. D -200 mA, -40 V PNP Plastic Encapsulated Transistor Any changes of specification will not be informed individually. Page 4 of 5 MMBT3906 Elektronische Bauelemente http://www.SeCoSGmbH.com/ 30-Aug-2010 Rev. D -200 mA, -40 V PNP Plastic Encapsulated Transistor Any changes of specification will not be informed individually. Page 5 of 5