IRF IRKT105 Thyristor/ diode and thyristor/ thyristor Datasheet

Bulletin I27133 rev. I 09/04
IRK.105 SERIES
ADD-A-pakTM GEN V Power Modules
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
Benefits
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500V RMS isolating voltage
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded
105 A
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solid Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
Major Ratings and Characteristics
Parameters
IRK.105
Units
105
A
IO(RMS) (*)
235
A
ITSM @ 50Hz
1785
A
IFSM @ 60Hz
1870
A
@ 50Hz
15.91
KA 2s
@ 60Hz
14.52
KA 2s
159.1
KA 2√s
IT(AV) or I F(AV)
@ 85°C
2
I t
2
I √t
VRRM range
400 to 1600
TSTG
TJ
V
- 40 to 150
o
C
- 40 to130
o
C
(*) As AC switch.
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1
IRK.105 Series
Bulletin I27133 rev. I 09/04
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
-
VRRM , maximum
VRSM , maximum
VDRM , max. repetitive
repetitive
non-repetitive
peak off-state voltage,
peak reverse voltage peak reverse voltage
gate open circuit
V
V
V
04
400
500
400
06
600
700
600
08
800
900
800
10
1000
1100
1000
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
IRK.105
IRRM
IDRM
130°C
mA
20
On-state Conduction
Parameters
IT(AV)
current (Thyristors)
IF(AV)
IRK.105
Units
Conditions
Max. average on-state
Max. average forward
180 o conduction, half sine wave,
105
TC = 85oC
current (Diodes)
IO(RMS) Max. continuous RMS
on-state current.
As AC switch
235
I(RMS)
A
ITSM
Max. peak, one cycle
1785
t =10ms
or
non-repetitive on-state
1870
t =8.3ms reapplied
IFSM
or forward current
1500
t =10ms
1570
t =8.3ms reapplied
I2t
Max. I 2t for fusing
VT(TO) Max. value of threshold
voltage (2)
Initial TJ = T J max.
t =10ms
TJ = 25oC,
15.91
t =10ms
14.52
t =8.3ms reapplied
KA2s
t =10ms
No voltage
100% VRRM
Initial TJ = TJ max.
t =8.3ms reapplied
20.00
t =10ms
18.30
t =8.3ms no voltage reapplied
159.1
0.80
0.85
Max. value of on-state
2.37
2.25
VTM
slope resistance (2)
Max. peak on-state or
VFM
forward voltage
di/dt
Max. non-repetitive rate
K A2√s
V
mΩ
1.64
V
150
A/µs
TJ = 25oC,
t = 0.1 to 10ms, no voltage reappl. TJ =TJ max
Low level (3)
High level (4)
Low level (3)
High level (4)
ITM = π x IT(AV)
IFM = π x IF(AV)
TJ = TJ max
TJ = TJ max
TJ = 25°C
TJ = 25 o C, from 0.67 VDRM ,
current
I TM =π x I T(AV), Ig = 500mA,
t r < 0.5 µs, t p > 6 µs
IH
Max. holding current
250
IL
Max. latching current
400
TJ = 25oC, anode supply = 6V,
mA
(1) I2t for time t x = I2√t x √tx
100% VRRM
Sinusoidal
half wave,
t =8.3ms no voltage reapplied
rt
of rise of turned on
No voltage
2000
10.27
Max. I 2√t for fusing (1)
I(RMS)
2100
11.25
I2√t
or
resistive load, gate open circuit
TJ = 25oC, anode supply = 6V, resistive load
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
(3) 16.7% x p x IAV < I < p x IAV
(4) I > p x IAV
2
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IRK.105 Series
Bulletin I27133 rev. I 09/04
Triggering
Parameters
PGM
IRK. 105
Max. peak gate power
Conditions
12
PG(AV) Max. average gate power
3
IGM
3
Max. peak gate current
-VGM Max. peak negative
W
A
10
gate voltage
VGT
Units
Max. gate voltage
4.0
required to trigger
2.5
TJ = - 40°C
V
TJ = 25°C
1.7
IGT
VGD
Max. gate current
270
required to trigger
150
TJ = - 40°C
TJ = 25°C
mA
resistive load
Anode supply = 6V
resistive load
80
TJ = 125°C
0.25
V
TJ = 125 C,
rated VDRM applied
6
mA
TJ = 125oC,
rated VDRM applied
IRK.105
Units
20
mA
Max. gate voltage
o
that will not trigger
IGD
TJ = 125°C
Anode supply = 6V
Max. gate current
that will not trigger
Blocking
Parameters
IRRM
IDRM
Conditions
Max. peak reverse and
off-state leakage current
TJ = 130oC, gate open circuit
at VRRM, VDRM
VINS
RMS isolation voltage
2500 (1 min)
dv/dt Max. critical rate of rise
of off-state voltage (5)
50 Hz, circuit to base, all terminals
V
3500 (1 sec)
500
shorted
TJ = 130oC, linear to 0.67 VDRM,
gate open circuit
V/µs
(5) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. IRKT105/16AS90.
Thermal and Mechanical Specifications
Parameters
IRK.105
TJ
Junction operating
temperature range
- 40 to 130
Tstg
Storage temp. range
- 40 to 150
Units
Conditions
°C
RthJC Max. internal thermal
resistance, junction
0.135
Per module, DC operation
to case
K/W
RthCS Typical thermal resistance
case to heatsink
T
Mounting torque ± 10%
busbar
Nm
3
Approximate weight
110 (4)
Case style
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound
5
to heatsink
wt
Mounting surface flat, smooth and greased
0.1
gr (oz)
TO-240AA
JEDEC
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Devices
IRK.105
Sine half wave conduction
180o
0.04
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120o
0.05
90o
0.06
60o
0.08
Rect. wave conduction
30 o
0.12
180o
0.03
120 o
0.05
90 o
0.06
60 o
0.08
30o
0.12
Units
°C/ W
3
IRK.105 Series
Bulletin I27133 rev. I 09/04
Ordering Information Table
Device Code
IRK
T
105
1
2
3
/
16
A
S90
4
5
6
IRK.106 types
With no auxiliary cathode
1
-
Module type
2
-
Circuit configuration (See Circuit Configuration table below)
3
-
Current code * *
4
-
Voltage code (See Voltage Ratings table)
5
-
A : Gen V
6
-
dv/dt code:
* * Available with no auxiliary cathode.
To specify change:
105 to 106
e.g. : IRKT106/16A etc.
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
Outline Table
Dimensions are in millimeters and [inches]
IRKT
IRKH
(1)
~
(1)
~
+
(2)
+
(2)
+
(2)
(3)
(3)
(3)
G1 K1
(4) (5)
IRKN
IRKL
(1)
~
K2 G2
(7) (6)
G1 K1
(4) (5)
(1)
-
(2)
+
+
(3)
K2 G2
(7) (6)
G1 K1
(4) (5)
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRK.105 Series
IRK.105.. Series
R thJC (DC) = 0.27 K/ W
120
110
Conduction Angle
100
90
30°
60°
80
90°
120°
180°
0
20
40
60
80
100
120
thJC
120
110
Conduction Period
100
90
30°
60°
90°
80
120°
70
0
20
40
60
180°
DC
80 100 120 140 160 180
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
180°
120°
90°
60°
30°
140
120
RMSLimit
80
60
Conduction Angle
40
IRK.105.. Series
Per Junction
TJ = 130°C
20
0
IRK.105.. Series
R
(DC) = 0.27 K/ W
Average On-state Current (A)
160
100
130
Average On-state Current (A)
0
20
40
60
80
100
120
Maximum Average On-state Power Loss (W)
70
Maximum Allowable Case Temperature (°C)
130
200
DC
180°
120°
90°
60°
30°
180
160
140
120
100 RMSLimit
80
Conduction Period
60
IRK.105.. Series
Per Junction
T J = 130°C
40
20
0
0
20
40
60
80 100 120 140 160 180
Average On-state Current (A)
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
1600
At Any Rated Loa d Condition And With
Rated VRRM Ap plied Following Surge.
Initial TJ= 130°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
1500
1400
1300
1200
1100
1000
900
IRK.105.. Series
Per Junction
800
700
1
10
100
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
Bulletin I27133 rev. I 09/04
1800
Maximum Non Repetitive Surge Current
Versus Pulse Tra in Duration. Control
Of Conduc tion May Not Be Maintained.
Initial TJ = 130°C
No Volta ge Reapp lied
Rated VRRMReapp lied
1600
1400
1200
1000
800
IRK.105.. Series
Per Junction
600
0.01
0.1
1
Number Of Equa l Amplitud e Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
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5
IRK.105 Series
Bulletin I27133 rev. I 09/04
R th
180°
120°
90°
60°
30°
W
K/
ta
el
-D
K/
W
R
0.5
K/
W
150
0. 7
Conduction Angle
K/ W
1K
/W
100
IRK.105.. Series
Per Mod ule
TJ = 130°C
50
0
1
0.
200
0.
3
W
K/
250
=
SA
300
2
0.
Maximum Tota l On-state Power Loss (W)
350
0
40
80
120
160
200
2 K/W
240
0
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Total RMS Output Current (A)
Fig. 7 - On-state Power Loss Characteristics
Rt
180°
(Sine)
180°
(Rec t)
1
0.
R
0.
3
ta
el
-D
0.
2K
/W
300
K/
W
0. 5
200
2 x IRK.105.. Series
Single Phase Bridge
Connec ted
TJ = 130°C
100
0
W
K/
400
=
500
A
hS
Maximum Total Power Loss (W)
600
0
40
80
120
160
K/ W
0.7
K/ W
1 K/ W
2 K/ W
200
0
Total Output Current (A)
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-state Power Loss Characteristics
800
R
700
SA
th
Maximum Total Power Loss (W)
900
=
600
120°
(Rect)
500
0.
1
0.2
K/
W
400
K/
W
-D
el
ta
R
0.3
K/ W
300
3 x IRK.105.. Series
Three Phase Bridge
Connec ted
TJ = 130°C
200
100
0.5
1 K/
K/ W
W
0
0
40
80
120
160
200
Total Output Current (A)
240
280
0
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-state Power Loss Characteristics
6
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IRK.105 Series
Bulletin I27133 rev. I 09/04
Instantaneous On-state Current (A)
1000
100
TJ= 25°C
TJ= 130°C
10
IRK.105.. Series
Per Junction
1
0
0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
700
I TM = 200 A
IRK.105.. Series
TJ= 125 °C
600
Maximum Reverse Recovery Current - Irr (A)
Ma ximum Reverse Recovery Charge - Qrr (µC)
Fig. 10 - On-state Voltage Drop Characteristics
100 A
500
50 A
400
20 A
300
10 A
200
100
10
20
30
40
50
60
70
80
90 100
140
120
J
100 A
100
50 A
80
20 A
10 A
60
40
20
10
Rate Of Fall Of On-state Current - di/ dt (A/ µs)
20
30
40
50
60
70
80
90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 12 - Recovery Current Characteristics
Fig. 11 - Recovery Charge Characteristics
Transient Thermal Impedanc e Z thJC (K/W)
I TM = 200 A
IRK.105.. Series
T = 125 °C
1
Steady State Value:
R thJC = 0.27 K/ W
(DC Operation)
0.1
IRK.105.. Series
Per Junc tion
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 13 - Thermal Impedance Z thJC Characteristics
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IRK.105 Series
Bulletin I27133 rev. I 09/04
Rectangular gate pulse
a)Rec ommended load line for
rated di/ dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Rec ommended load line for
<= 30% rated di/ dt: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs
10
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
(a)
TJ = 125 °C
1
TJ = -40 °C
(b )
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
(4)
(3) (2)
(1)
VGD
IGD
0.1
0.001
0.01
IRK.105.. Series
0.1
1
Frequenc y Limited by PG(AV)
10
100
1000
Instantaneous Gate Current (A)
Fig. 14- Gate Characteristics
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 09/04
8
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