IRFHM8326PbF VDSS 30 V VGS max RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) ±20 V Qg (typical) ID (@TC (Bottom) = 25°C) 20 4.7 HEXFET® Power MOSFET m 6.7 S S S G D nC 70 D D A D D PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for Buck Converters Features Low Thermal Resistance to PCB (<3.4°C/W) Low Profile (<1.05 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Base part number Package Type IRFHM8326PbF PQFN 3.3 mm x 3.3 mm Benefits Enable better thermal dissipation Increased Power Density results in Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFHM8326TRPbF Absolute Maximum Ratings Parameter Max. Units V VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 19 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 15 ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 70 ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V 44 ID @ TC = 25°C 25 IDM Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current PD @TA = 25°C Power Dissipation 2.8 PD @TC(Bottom) = 25°C Power Dissipation 37 Linear Derating Factor TJ Operating Junction and TSTG Storage Temperature Range A 278 0.023 -55 to + 150 W W/°C °C Notes through are on page 9 1 2016-2-23 IRFHM8326PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient BVDSS/TJ RDS(on) Static Drain-to-Source On-Resistance VGS(th) VGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage gfs Forward Transconductance Qg Total Gate Charge Total Gate Charge Qg Qgs1 Pre-Vth Gate-to-Source Charge Qgs2 Post-Vth Gate-to-Source Charge Qgd Gate-to-Drain Charge Qgodr Gate Charge Overdrive Qsw Switch Charge (Qgs2 + Qgd) Qoss Output Charge Gate Resistance RG td(on) Turn-On Delay Time Rise Time tr td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Output Capacitance Coss Crss Reverse Transfer Capacitance Avalanche Characteristics Parameter EAS Single Pulse Avalanche Energy Avalanche Current IAR Diode Characteristics Parameter IS Continuous Source Current (Body Diode) Pulsed Source Current ISM (Body Diode) Diode Forward Voltage VSD trr Reverse Recovery Time Reverse Recovery Charge Qrr IGSS Min. 30 ––– ––– ––– 1.2 ––– ––– ––– ––– ––– 70 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 22 3.8 5.2 1.7 -10 ––– ––– ––– ––– ––– 39 20 4.8 2.6 6.5 6.1 9.1 11 1.9 12 35 18 12 2496 524 273 Max. ––– ––– 4.7 6.7 2.2 ––– 1.0 150 100 -100 ––– ––– 30 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Units Conditions V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 20A m VGS = 4.5V, ID = 20A V V = VGS, ID = 50µA mV/°C DS VDS = 24V, VGS = 0V µA VDS = 24V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V S VDS = 10V, ID = 20A nC VGS = 10V, VDS = 15V, ID = 20A nC nC VDS = 15V VGS = 4.5V ID = 20A VDS = 16V, VGS = 0V ns VDD = 15V, VGS = 4.5V ID = 20A RG=1.8 pF VGS = 0V VDS = 10V ƒ = 1.0MHz Typ. ––– ––– Min. Typ. Max. ––– ––– 25 Max. 58 20 Units D A ––– ––– 278 ––– ––– ––– ––– 15 14 1.0 23 21 Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 20A, VGS = 0V TJ = 25°C, IF = 20A, VDD = 15V di/dt = 300A/µs G S V ns nC Thermal Resistance Parameter RJC (Bottom) Junction-to-Case Junction-to-Case RJC (Top) RJA RJA (<10s) 2 Junction-to-Ambient Junction-to-Ambient Typ. ––– Max. 3.4 Units ––– 41 °C/W ––– ––– 44 31 2016-2-23 IRFHM8326PbF 1000 1000 100 BOTTOM 10 2.5V 1 60µs PULSE WIDTH TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 7.0V 4.5V 4.0V 3.5V 3.0V 2.75V 2.5V 100 BOTTOM 10 2.5V 60µs PULSE WIDTH Tj = 25°C Tj = 150°C 0.1 1 0.1 1 10 100 0.1 1 V DS, Drain-to-Source Voltage (V) 1.8 100 TJ = 150°C 10 TJ = 25°C 1 V DS = 10V 60µs PULSE WIDTH RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 100 Fig 2. Typical Output Characteristics 1000 ID = 20A V GS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 0.1 1.0 2.0 3.0 4.0 5.0 -60 -40 -20 0 6.0 V GS, Gate-to-Source Voltage (V) 100000 Fig 4. Normalized On-Resistance vs. Temperature 14.0 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd V GS, Gate-to-Source Voltage (V) ID= 20A Coss = Cds + Cgd 10000 Ciss 1000 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics C, Capacitance (pF) 10 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Coss Crss 12.0 V DS= 24V V DS= 15V 10.0 V DS= 6.0V 8.0 6.0 4.0 2.0 0.0 100 1 10 100 V DS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 VGS 10V 7.0V 4.5V 4.0V 3.5V 3.0V 2.75V 2.5V 0 5 10 15 20 25 30 35 40 45 50 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 2016-2-23 IRFHM8326PbF 1000 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 TJ = 150°C 10 TJ = 25°C 1 100µsec 100 1msec 10 Limited by Source Bonding Tecnology 1 10msec Tc = 25°C Tj = 150°C Single Pulse V GS = 0V 0.1 OPERATION IN THIS AREA LIMITED BY R DS(on) 0.1 0.0 0.4 0.8 1.2 1.6 2.0 0.1 1 V SD, Source-to-Drain Voltage (V) 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 2.6 80 V GS(th) , Gate threshold Voltage (V) Limited by package 60 ID, Drain Current (A) DC 40 20 2.2 1.8 1.4 1.0 ID = 50µA ID = 250µA ID = 1.0mA ID = 1.0A 0.6 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 TJ , Temperature ( °C ) TC , Case Temperature (°C) Fig 10. Drain-to–Source Breakdown Voltage Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( Z thJC ) °C/W 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 2016-2-23 9.0 250 ID = 20A EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m ) IRFHM8326PbF 8.0 7.0 TJ = 125°C 6.0 5.0 TJ = 25°C 4.0 3.0 ID 4.7A 9.8A BOTTOM 20A TOP 200 150 100 50 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) V GS, Gate -to -Source Voltage (V) Fig 12. On– Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current 100 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125°C and Tstart =25°C (Single Pulse) 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 125°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs. Pulsewidth 5 2016-2-23 IRFHM8326PbF Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A 0.01 I AS Fig 16a. Unclamped Inductive Test Circuit Fig 16b. Unclamped Inductive Waveforms Fig 17a. Switching Time Test Circuit Fig 17b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 18a. Gate Charge Test Circuit 6 Qgd Qgodr Fig 18b. Gate Charge Waveform 2016-2-23 IRFHM8326PbF PQFN 3.3 x 3.3 Outline “C” Package Details 8 7 6 5 1 2 3 4 3 4 6 5 1 8 2 7 PQFN 3.3 x 3.3 Outline “G” Package Details 8 7 6 5 #1 2 3 4 #1 2 3 4 8 7 6 5 For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf 7 2016-2-23 IRFHM8326PbF PQFN 3.3mm x 3.3mm Outline Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) XXXX ?YWW? XXXXX PIN 1 IDENTIFIER PART NUMBER MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ PQFN 3.3mm x 3.3mm Outline Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS CODE Ao Bo Ko DIMENSION (MM) MIN MAX 3.50 3.70 3.50 3.70 1.10 1.30 7.90 P1 11.80 W 12.30 W1 Qty Reel Diameter QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE CODE Ao Bo Ko W P1 DIMENSION (INCH) MIN MAX .138 .146 .138 .146 .043 .051 8.10 12.20 12.50 .311 .465 .484 .319 .480 .492 4000 13 Inches DESCRIPTION Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2016-2-23 IRFHM8326PbF Qualification Information† Qualification Level Moisture Sensitivity Level RoHS Compliant Consumer†† (per JEDEC JESD47F††† guidelines) PQFN 3.3mm x 3.3mm MSL1 (per JEDEC J-STD-020D†††) Yes † †† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ††† Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.29mH, RG = 50, IAS = 20A. Pulse width 400µs; duty cycle 2%. R is measured at TJ of approximately 90°C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Current is limited to 25A by source bonding technology. 9 2016-2-23 IRFHM8326PbF Revision History Date Comments 6/6/2014 Updated schematic on page 1 Updated package outline and part marking on page 7 Updated tape and reel on page 8 6/30/2014 Remove “SAWN” package outline on page 7. 2/23/2016 Updated datasheet with corporate template Updated package outline to reflect the PCN # (241-PCN30-Public) for “Option C“ and “Option G” on page 7. Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 10 2016-2-23