AO6801 30V Dual P-Channel MOSFET General Description Product Summary The AO6801 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) VDS -30V -2.3A RDS(ON) (at VGS =-10V) < 115mΩ RDS(ON) (at VGS =-4.5V) < 150mΩ RDS(ON) (at VGS =-2.5V) < 200mΩ TSOP6 Top View D1 Bottom View D2 Top View G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 G1 G2 S1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 4: April 2011 Steady-State Steady-State V A -11 W 0.73 -55 to 150 TJ, TSTG Symbol t ≤ 10s ±12 1.15 PD TA=70°C Units V -2 IDM TA=25°C Maximum -30 -2.3 ID TA=70°C S2 RθJA RθJL www.aosmd.com Typ 78 106 64 °C Max 110 150 80 Units °C/W °C/W °C/W Page 1 of 5 AO6801 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.6 ID(ON) On state drain current VGS=-10V, VDS=-5V -11 TJ=55°C -5 VDS=0V, VGS= ±12V ±100 VGS=-10V, ID=-2.3A Static Drain-Source On-Resistance TJ=125°C V A 88 115 143 190 mΩ 103 150 mΩ 200 mΩ 8 VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current -0.78 DYNAMIC PARAMETERS Input Capacitance Ciss Reverse Transfer Capacitance -1.4 nA 139 VDS=-5V, ID=-2.3A Crss -1 µA VGS=-4.5V, ID=-2A Forward Transconductance Output Capacitance Units VGS=-2.5V, ID=-1A gFS Coss Max V VDS=-30V, VGS=0V IDSS RDS(ON) Typ 260 VGS=0V, VDS=-15V, f=1MHz S -1 V -1.5 A 315 pF 37 pF 20 pF 8 12 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 5.9 7 nC Qg(4.5V) Total Gate Charge 2.8 4 nC Rg Gate resistance VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-2.3A 4 Qgs Gate Source Charge 0.7 nC Qgd Gate Drain Charge 1 nC tD(on) Turn-On DelayTime 6 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=-10V, VDS=-15V, RL=6.5Ω, RGEN=3Ω 3.5 ns 20 ns 5 ns trr Body Diode Reverse Recovery Time IF=-2.3A, dI/dt=100A/µs 11.5 Qrr Body Diode Reverse Recovery Charge IF=-2.3A, dI/dt=100A/µs 4.5 15 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 4: April 2011 www.aosmd.com Page 2 of 5 AO6801 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10 -4.5V -10V VDS=-5V 12 8 -3V 6 9 -ID(A) -ID (A) -6V -2.5V 4 6 VGS=-2V 3 125°C 2 25°C 0 0 0 1 2 3 4 0 5 1 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 210 3 4 2 Normalized On-Resistance 190 VGS=-2.5V 170 RDS(ON) (mΩ ) 2 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 150 130 VGS=-4.5V 110 90 VGS=-10V 70 1.8 VGS=-10V ID=-2.3A 1.6 1.4 1.2 VGS=-4.5V ID=-2A 1 17 5 2 VGS=-2.5V ID=-1A 10 0.8 50 0 1 0 2 3 4 5 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 250 1.0E+02 ID=-2.3A 1.0E+01 40 200 1.0E+00 -IS (A) RDS(ON) (mΩ ) 125°C 150 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 100 25°C 1.0E-04 1.0E-05 50 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 4: April 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO6801 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 10 VDS=-15V ID=-2.3A 8 Ciss Capacitance (pF) -VGS (Volts) 300 6 4 200 100 Coss 2 0 Crss 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 6 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 100.0 TA=25°C 1.0 1000 10µs RDS(ON) limited Power (W) ID (Amps) 10.0 100µ 1ms 10ms 0.1 TJ(Max)=150°C TA=25°C 100 10 10s DC 0.0 1 0.01 0.1 1 VDS (Volts) 10 100 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=150°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 4: April 2011 www.aosmd.com Page 4 of 5 AO6801 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 4: April 2011 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5