ASI MRF839F Npn silicon rf power transistor Datasheet

MRF839F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .230 6L FLG
The MRF839F is Designed for
Class AB, Common Emitter
Applicatons Up to 960 MHz.
A
.040x45°
B
C
2XØ.130
4X .025 R
.115
.430 D
E
FEATURES INCLUDE:
G
• Input Matching Network
• High Gain
• Gold Metalization
H
I
J K
MAXIMUM RATINGS
0.6 A
IC
VCES
36 V
PDISS
20 W @ TC = 25 C
O
O
O
-55 C to +200 C
TJ
O
F
.125
DIM
MINIMUM
inches / mm
inches / mm
A
.355 / 9.02
.365 / 9.27
B
.115 / 2.92
.125 / 3.18
C
.075 / 1.91
.085 / 2.16
D
.225 / 5.72
.235 / 5.97
E
.090 / 2.29
.110 / 2.79
F
.720 / 18.29
.730 / 18.54
G
.970 / 24.64
.980 / 24.89
H
.355 / 9.02
.365 / 9.27
I
.004 / 0.10
.006 / 0.15
J
.120 / 3.05
.130 / 3.30
K
.160 / 4.06
.180 / 4.57
L
.230 / 5.84
.260 / 6.60
L
MAXIMUM
O
TSTG
-55 C to +150 C
θJC
9.0 C/W
1 & 3 & 4 & 6 = EMITTER
2 = BASE
5 = COLLECTOR
O
CHARACTERISTICS
O
TC = 25 C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCES
IC = 5.0 mA
40
V
BVCEO
IC = 5.0 mA
16
V
BVEBO
IE = 100 µA
3.5
V
ICES
VCE = 15 V
hFE
VCE = 5.0 V
COB
VCB = 15 V
PG
ηC
VCE = 12.5 V
FO = 870 MHz
IC = 100 mA
10
f = 1.0 MHz
ICQ = 50mA
POUT = 3.0 W
8.0
50
10.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
1
mA
150
---
10
pF
dB
%
REV. A
1/1
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